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Electronic Devices and Semiconductor Manufacturing Commons™

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University of Arkansas, Fayetteville

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Articles 121 - 132 of 132

Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Measurement Of Absolute Argon Excited State Populations And Electron Energy Distribution Functions In An Ar-A-Si Plasma, Katherine Herring May 2008

Measurement Of Absolute Argon Excited State Populations And Electron Energy Distribution Functions In An Ar-A-Si Plasma, Katherine Herring

Electrical Engineering Undergraduate Honors Theses

Deposition systems utilizing plasma are used for a variety of tasks, including tool coatings and creating thin-film materials. In order to have repeatable results, the internal conditions of a plasma chamber need to be known. This project centered on the use of data from optical emissions and a Langmuir probe from an argon plasma amorphous silicon depositing system. An electron energy distribution function (EEDF) was obtained from manipulation of the Langmuir probe data. This EEDF was then input to an argon collisional-radiative model (CRM) to obtain the electron population of the 4p level of the argon plasma. Through an absolute …

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A Timer Module For An 8051 Microcontroller, Troy England May 2008

A Timer Module For An 8051 Microcontroller, Troy England

Electrical Engineering Undergraduate Honors Theses

A timer module for an 8051 Microcontroller is designed from the ground up. It could potentially be integrated into a larger 8051 for use in lunar and Martian missions. It follows through a synchronous digital design flow from HDL code through layout verification. The timer shows functionality at 100MHz with some minor glitches.

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The Need For Pfc Abatement In Semiconductor Manufacturing, Mohsen Manesh, Brian Kendrick Jan 2002

The Need For Pfc Abatement In Semiconductor Manufacturing, Mohsen Manesh, Brian Kendrick

Inquiry: The University of Arkansas Undergraduate Research Journal

Perfluorocompounds (PFCs) are highly stable chemical compounds used in two integral steps of semiconductor manufacturing: chemical vapor deposition (CVD) chambers and etch chambers. Unfortunately, PFCs are also greenhouse gases linked to global warming. This, combined with their long atmospheric lifetimes gives them global warming potentials much higher than C02 the principal greenhouse gas. In a series of voluntary agreements with the United States and other national governments, the worldwide semiconductor industry has set a goal of reducing PFC emissions to 90% of their 1995 levels. To reach this goal, researchers have explored four main methods of reduction: substitution of PFCs, …

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Co-Polymers Of Furan With Pyrrole Or Thiophene: A Synthetic Study, Rose M. Mcconnell, Walter E. Godwin, Susan E. Baker, Kenya Powell, Martha Baskett, Amy Morara, Xiadong Ma Jan 2002

Co-Polymers Of Furan With Pyrrole Or Thiophene: A Synthetic Study, Rose M. Mcconnell, Walter E. Godwin, Susan E. Baker, Kenya Powell, Martha Baskett, Amy Morara, Xiadong Ma

Journal of the Arkansas Academy of Science

The use of conductive polymers as a substitute for metallic conductors and semiconductors has attracted much attention in the literature. In particular, aromatic heterocyclic polymers constitute an important class since they possess chemical and electrical stability in both the oxidized (doped) and neutral (undoped) state. Doping a polymer allows one to vary its electrical, mechanical, optical, and thermal properties. The properties of these polymers are promising for their many technological uses such as antistatic coatings, solar cells, and electronic devises. Polyfuran is among the least common heterocyclic polymers. Polyfuran has been reported to be much less stable that either polypyrrole …

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Improved Methods For Electroplating Cadmium Sulfide Thin Films, Brandon Kemp, Robert Engelken, Arif Raza, Wasim Aleem, Imran Khan, Chris Barber Jan 1996

Improved Methods For Electroplating Cadmium Sulfide Thin Films, Brandon Kemp, Robert Engelken, Arif Raza, Wasim Aleem, Imran Khan, Chris Barber

Journal of the Arkansas Academy of Science

We report improved methods for electroplating cadmium sulfide (CMS) films. Aprevious problem was cracking/flaking of films deposited from organic solutions of elemental sulfur; attempts to improve adhesion via bath additives reduced grain size. Aqueous baths of thiosulfate ions yield cadmium-richness at low T temperatures (T), long deposition times, and/or poor bath stability. Developments in our work to be discussed include (1) plating ofuniform, adherent, and stoichiometric CdS from tetraethylene baths of CdCl 2 and elemental sulfur at T >70° C with minimal cracking/flaking, (2) improved uniformity/ adherence by use of CdL>, and (3) swept voltage methods in aqueous thiosulfate …

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Characterization Of Cadmium Sulfide Films Deposited By Chemical Bath Method, Quazi Galib Samdami, Hameed A. Naseem, W. D. Brown Jan 1995

Characterization Of Cadmium Sulfide Films Deposited By Chemical Bath Method, Quazi Galib Samdami, Hameed A. Naseem, W. D. Brown

Journal of the Arkansas Academy of Science

Thin filmcadmium sulfide is a leading candidate in the fabrication of large area solar cells. The chemical bath deposition method is one of the least expensive sources for the fabrication of device quality cadmium sulfide thin films.Inthe present work, the deposition of CdS films on glass substrate from an aqueous solution containing cadmium acetate, ammonia, ammonium acetate, and thiourea are investigated. The structural properties of CdS films are characterized. Good quality thin films within 0.1 - o.5 |im thickness were obtained in30 minute deposition time, and at 70*-90*C. The films show preferential orientations. The optical transmittance of the films are …

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Polishing Of Cvd-Diamond Substrates Using Reactive Ion Etching, Gopi M.R. Sirineni, Hameed A. Naseem, W. D. Brown, A. P. Malshe Jan 1995

Polishing Of Cvd-Diamond Substrates Using Reactive Ion Etching, Gopi M.R. Sirineni, Hameed A. Naseem, W. D. Brown, A. P. Malshe

Journal of the Arkansas Academy of Science

Multichip modules (MCM)have proved to be a viable packaging technology for achieving small size and high performance. By their nature, MCMs typically integrate multiple bare die into a module that can be the plastic or ceramic package. As a result, the MCMrequires an efficient mechanism for removing excess heat. Diamond with its excellent thermal conductivity, is the ideal choice as a substrate material for these applications. Chemical vapor deposited (CVD) diamond substrates makes possible the practical realization of a novel diamond based 3-D MCM. However, the diamond films grown by CVD technique are polycrystalline and have non-uniform filmroughness and randomly …

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Diagnostics Of Cdte Electrodeposition By Rest Potential Voltammetry, Brandon Kemp, Robert Engelken, Arif Raza, Arees Siddiqui, Omer Mustafa Jan 1995

Diagnostics Of Cdte Electrodeposition By Rest Potential Voltammetry, Brandon Kemp, Robert Engelken, Arif Raza, Arees Siddiqui, Omer Mustafa

Journal of the Arkansas Academy of Science

Due to the extreme sensitivity of the partial elemental currents (i.e.,iCd, iTe) and, hence, stoichiometry to deposition voltage, temperature, mass transport, and ambient light intensity during electrodeposition of semiconductor films, it is important to implement in-situ methods for monitoring the stoichiometry and related semiconductor efficacy of the growing film. We report investigation of open circuit rest potential (Eoc) voltammetry as one such method during electrodeposition of CdTe from aprotic electrolytes such as ethylene glycol. Plots of transient open circuit potential versus sweep voltage exhibit distinct transition and plateau structures corresponding to Te, CdTe, and Cd phases and correlating with the …

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Semi-Insulating Polysilicon Hetero- And Isotype Junctions On Silicon, R. M. Ranade, S. S. Ang, W. D. Brown Jan 1993

Semi-Insulating Polysilicon Hetero- And Isotype Junctions On Silicon, R. M. Ranade, S. S. Ang, W. D. Brown

Journal of the Arkansas Academy of Science

The effects of nitrogen trifluorideinthe gas stream during deposition of semi-insulating polysilicon (SIPOS) on the electrical characteristics of undoped (SIPSO)/p-Si, and n+-SIPOS/n-Si isotype junctions were investigated. The current-voltage characteristics of undoped SIPOS/p-Si heterojunctions exhibit a strong dependence on the oxygen content of the SIPOS film and depart from a hyperbolic sine behavior as the refractive index of the SIPOS increases.. The addition of nitrogen trifluoride decreases the current density of these undoped SIPOS/p-Si heterojunctions due presumably to the oxidation/hydrolysis of SiF species intoSiO2. The n+-SIPOS formed a rectifying isotype junction o n-Si. The forward current voltage characteristics exhibit two distinct …

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Properties Of Ruthenium Oxide Coatings, Roger M. Hawk, Kamesh V. Gadepally, David N. Patangia Jan 1991

Properties Of Ruthenium Oxide Coatings, Roger M. Hawk, Kamesh V. Gadepally, David N. Patangia

Journal of the Arkansas Academy of Science

Ruthenium oxide coatings have been deposited on titanium substrates using a flood coating process. These films were heat treated for varying times and temperatures. The resulting films subsequently were characterized by performing resistivity and SEM analyses. Resistivity of the ruthenium oxide coating was found to be extremely dependent upon the firing temperature. Effect of the process conditions and formulations of the coatings on the morphology with respect to their electrical characteristics is presented. Capacitors were fabricated using plates coated with ruthenium oxide coatings. Capacitance versus heat treatment temperatures are discussed and at one firing temperature (480'C), the capacitance was 50 …

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Integrated Circuits Interconnect Metallization For The Submicron Age, Kamesh V. Gadepally, Roger M. Hawk Jan 1989

Integrated Circuits Interconnect Metallization For The Submicron Age, Kamesh V. Gadepally, Roger M. Hawk

Journal of the Arkansas Academy of Science

The interconnect metallization being used by the semiconductor industry has been aluminum or aluminum silicon. Aluminum silicon is being replaced by aluminum copper and aluminum copper silicon, due to its superior resistance to electromigration and hillock growth. This paper discusses the implementation of aluminum copper/silicon alloys in semiconductor processing, along with a review of the problems and advantages of the same.

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Random Wave Form Generator, Zaboj V. Harvalik Jan 1952

Random Wave Form Generator, Zaboj V. Harvalik

Journal of the Arkansas Academy of Science

No abstract provided.

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