Electronic Devices and Semiconductor Manufacturing Commons^™

Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li

Graduate Theses and Dissertations

Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and super lattices (SLs) are expected to be promising alternatives to random InGaN alloys since in principle they can achieve the equivalent band gap of InGaN random alloys with arbitrarily high In-content and at the same time bypass many growth difficulties.

This dissertation focuses on studying the growth mechanisms, structural properties and energy structures of InN/GaN …

Iii-V Bismide Optoelectronic Devices, Dongsheng Fan

Graduate Theses and Dissertations

This dissertation explores modeling, molecular beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of telecommunication, gas sensing, environment monitoring, etc. In the current room-temperature continuous-wave operational GaSb-based type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is proposed to replace the conventional InGaAsSb material in the quantum well region, which enables the laser diodes achieve up to 4 µm …