Electronic Devices and Semiconductor Manufacturing Commons^™

Stability Analysis Of A High-Power Microgrid, David Manuel Carballo Rojas

Graduate Theses and Dissertations

The objective of this thesis is to perform the modeling and stability analysis of a high-power microgrid with multiple parallel-and grid connected voltage source converters using the system parameters from the high-power microgrid testbed at the National Center for Reliable Electric Power Transmission (NCREPT) at the University of Arkansas in order to identify, minimize, if not eliminate, the potential instabilities that can affect the proper operation of the microgrid testbed. To achieve this objective, the mathematical modeling of the high-power microgrid considering the adverse effects of resonances due to interactions among the converter LCL output filters is presented and analyzed. …

Investigation Of A Gan-Based Power Supply Topology Utilizing Solid State Transformer For Low Power Applications, Akrem Mohamed Elrajoubi

Graduate Theses and Dissertations

Gallium nitride (GaN) power devices exhibit a much lower gate capacitance for a similar on-resistance than its silicon counterparts, making it highly desirable for high-frequency operation in switching converters, which leads to their significant benefits on power density, cost, and system volume. High-density switching converters are being realized with GaN power devices due to their high switching speeds that reduce the size of energy-storage circuit components. The purpose of this dissertation research is to investigate a new isolated GaN AC/DC switching converter based on solid-state transformer configuration with a totem-pole power factor corrector (PFC) front-end, a half-bridge series-resonant converter (SRC) …

Comparative Study Of Power Semiconductor Devices In A Multilevel Cascaded H-Bridge Inverter, Kenneth Mordi

Graduate Theses and Dissertations

This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET …

High-Sn-Content Gesn Alloy Towards Room-Temperature Mid Infrared Laser, Wei Dou

Graduate Theses and Dissertations

Si photonics is a rapidly expanding technology that integrates photonic circuits onto a Si substrate. The integration of Si electronics and photonics has been a successful technology for a wide range of applications. Group-IV alloy GeSn has drawn great attentions as a complementary metal–oxide–semiconductor compatible optoelectronic material for Si photonics. The devices based on GeSn alloy could be monolithically integrated into well-established and high-yield Si integrated circuits, which is favorable for chip-scale Si photonics featuring smaller size, lower cost, and higher reliability.

The relaxed GeSn with high material quality and high Sn composition is highly desirable to cover mid-infrared wavelength. …

Si-Based Germanium Tin Photodetectors For Short-Wave And Mid-Wave Infrared Detections, Thach Pham

Graduate Theses and Dissertations

The demand of light-weight and inexpensive imaging system working in the infrared range keeps increasing for the last decade, especially for civil applications. Although several group IV materials such as silicon and germanium are used to realize detectors in the visible and near infrared region, they are not the efficient approach for imaging system in the short-wave infrared detection range and beyond due to bandgap limit. On the other hand, this market is heavily relied upon mature technology from III-V and II-VI elements over years, which are costly to growth and incompatible with available Si complementary metal-oxide-semiconductor (CMOS) foundries. This …

Properties Of Matter, Mike Jackson, Holly Haney

High School Lesson Plans

Students will investigate the relationship(s) between thermal and electrical properties of matter. First, students will use a multimeter and temperature probe to investigate the relationship between electrical resistance and temperature of an electrical resistor composed of metals. They will then graph collected data to analyze the relationship and draw a conclusion as to their relationship. They will then perform the same investigation on a thermal resistor made of a semiconducting substance and analyze that collected data. Finally, using ClaimEvidence-Reasoning (CER) structure, students will use their experimental evidence to state the similarities and differences between the electro-thermal properties of metals and …

High Temperature Wide Bandgap Light Emitting Diodes For Harsh Environment Applications, Stephanie Sandoval

Electrical Engineering Undergraduate Honors Theses

The need for high temperature, high power density power modules for applications such as electric vehicles and space exploration has driven the research into wide bandgap LEDs due to their potential operation at elevated temperatures. Wide bandgap LEDs offer an attractive solution due to properties such as high temperature tolerance, strong radiation hardness and good thermal conductivity. In this thesis, the electrical properties of GaN-on-SiC heterojunctions are studied as a precursor to an LED study, and the optical characterization of an InGaN/GaN MQW is reported. The GaN-on-SiC study revealed that these wide bandgap LEDs have linear sensitivity at high temperatures. …

Evaluation Of Terahertz Imaging For Breast Cancer Detection Using Image Morphing, Tanny Andrea Chavez Esparza

Graduate Theses and Dissertations

This thesis proposes the use of a mesh morphing algorithm for the quantitative evaluation of terahertz (THz) images. This work differs from traditional evaluation methods based on qualitative evaluation because it provides a fair and quantitative measurement of the THz imaging system's performance. The objective of the algorithm is to match the alignment, shape, and resolution of the THz and reference pathology images. Therefore, the proposed morphing method provides a pathology reference for a pixel-by-pixel evaluation of the region classification in the THz image. To achieve this, the morphing algorithm aligns the images using the Pearson's correlation coefficient and reshapes …

Glucose Level Estimation Based On Invasive Electrochemical, And Non-Invasive Optical Sensing Methods, Sanghamitra Mandal

Graduate Theses and Dissertations

The purpose of this research is to design and fabricate sensors for glucose detection using inexpensive approaches. My first research approach is the fabrication of an amperometric electrochemical glucose sensor, by exploiting the optical properties of semiconductors and structural properties of nanostructures, to enhance the sensor sensitivity and response time. Enzymatic electrochemical sensors are fabricated using two different mechanisms: (1) the low-temperature hydrothermal synthesis of zinc oxide nanorods, and (2) the rapid metal-assisted chemical etching of silicon (Si) to synthesize Si nanowires. The concept of gold nano-electrode ensembles is then employed to the sensors in order to boost the current …

Application Of Modular Multilevel Converters (Mmc) Using Phase-Shifted Pwm And Selective Harmonic Elimination In Distribution Systems, Thouhidul Islam

Graduate Theses and Dissertations

Reducing the size and weight of a power electric system is a prodigious challenge to researchers as the development of the latest technologies emerge in the field of electrical engineering. A similar urge is there to develop a light-weight mobile power substation (MPS) to use in the electric power distribution systems during emergency conditions. This thesis proposes a power electronics based solution using the modular multilevel converter (MMC) topology to design the MPS system. The market-available power semiconductor devices are analyzed and suitable devices are selected to design the system. The phase-shifted pulse width modulation (PS-PWM) and selective harmonic elimination …

Design, Fabrication, And Characterization Of Novel Optoelectronic Devices For Near-Infrared Detection, Ahmad Nusir

Graduate Theses and Dissertations

Investigating semiconductor materials and devices at the nanoscale has become crucial in order to maintain the exponential development in today’s technology. There is a critical need for making devices lower in power consumption and smaller in size. Nanoscale semiconductor materials provide a powerful platform for optoelectronic device engineers. They own interesting properties which include enhanced photoconductivity and size-tunable interband transitions.

In this research, different types of nanostructures were investigated for optoelectronic devices: nanocrystals, nanowires, and thin-films. First, lead selenide nanocrystals with narrow bandgap were synthesized, size-tailored, and functionalized with molecular ligands for the application of uncooled near-infrared photodetectors. The devices …

Design, Fabrication, And Characterization Of All-Inorganic Quantum Dot Light Emitting Diodes, Ramesh Vasan

Graduate Theses and Dissertations

Quantum dot light emitting diodes are investigated as a replacement to the existing organic light emitting diodes that are commonly used for thin film lighting and display applications. In this, all-inorganic quantum dot light emitting diodes with inorganic quantum dot emissive layer and inorganic charge transport layers are designed, fabricated, and characterized. Inorganic materials are more environmentally stable and can handle higher current densities than organic materials. The device consists of CdSe/ZnS alloyed core/shell quantum dots as the emissive layer and metal oxide charge transport layer. The charge transport in these devices is found to occur through resonant energy transfer …

The Development Of Novel Interconnection Technologies For 3d Packaging Of Wire Bondless Silicon Carbide Power Modules, Sayan Seal

Graduate Theses and Dissertations

This dissertation advances the cause for the 3D packaging and integration of silicon carbide power modules. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were investigated, and the concept for a novel SiC power module was discussed. This highly-integrated SiC power module was assessed for feasibility, with a focus on achieving ultralow parasitic inductances in the critical switching loops. This will enable higher switching frequencies, leading to …

Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi

Graduate Theses and Dissertations

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. …

Development Of Intermediate Band Solar Cell Through Ingan Quantum Well Structures, Kelly Mckenzie

Electrical Engineering Undergraduate Honors Theses

In the search for high-efficiency solar cells, In_xGa_1-xN has come under scrutiny as a unique material with high potential. This is due to characteristics including an easily tunable bandgap, large range of potential bandgap values, and high heat resistance. However, one factor limiting its adaptation is the high density of crystal defects. In this thesis, the qualities of InGaN are discussed and the intermediate band solar cell structure is introduced. Additionally, the growth and characterization of two sets of InGaN-based solar cell devices are reported and evaluated.

Reduction In Recombination Current Density In Boron Doped Silicon Using Atomic Hydrogen, Matthew Garett Young

Graduate Theses and Dissertations

The solar industry has grown immensely in recent years and has reached a point where solar energy has now become inexpensive enough that it is starting to emerge as a mainstream electrical generation source. However, recent economic analysis has suggested that for solar to become a truly wide spread source of electricity, the costs still need to plummet by a factor of 8x. This demands new and innovative concepts to help lower such cost. In pursuit of this goal, this dissertation examines the use of atomic hydrogen to lessen the recombination current density in the boron doped region of n-type …

Chip-Package Interfacial Stress Analysis And Reliability Implications For Flip-Chip Power Devices, Jonathan Gh Treco

Mechanical Engineering Undergraduate Honors Theses

The solder in flip-chip assemblies experience high stress and strain because of thermal mismatch induced deformation. These deformations occur because of the differences of coefficient of thermal expansion between flip-chip assembly materials. The similarly in stress profiles between thermal induced and shear induced stress in solder joints enable the use of die shear testing as a representative technique for relating the max stress the flip-chip can withstand to cyclic thermal fatigue failures. In this work, two electronic device sample preparation types are evaluated: One set of samples are soldered together and other set of samples use epoxy as an adhesive. …

Optimization Of Graphene Parameters For The Development Of Supercapacitors, Jessica L. Montgomery

Mechanical Engineering Undergraduate Honors Theses

In the growing market of evolving electronic devices and the sustainable goals of the energy industry, better sources of energy dense storage devices are needed. Carbon based supercapacitors have attracted the attention of research due to the natural properties of high electrical conductivity, chemical and electrochemical stability, and high surface area. The object of this thesis is to expand upon current knowledge of reduced graphene oxide to better understand the effectiveness of the material as electrode in supercapacitors. This thesis will focus on the physical orientation of supercapacitors to further develop a device that will allow a set of supercapacitors …

System-Layout-Dependent Thermally Induced Solder Stress & Reliability Implications, Ange C. Iradukunda

Mechanical Engineering Undergraduate Honors Theses

Electronic flip chip assemblies consist of dissimilar component materials, which exhibit different CTE. Under thermal cyclic operating conditions, this CTE mismatch produces interfacial and interconnect stresses, which are highly dependent on system layout. In this paper, sensitivity analyses are performed using ANSYS FEA to establish how the proximity and arrangement of neighboring devices affect interconnect stress. Flip chip alignment modes ranging from edge-to-edge to corner-to-corner are studied. Results of these FEA studies, demonstrated that closely packing devices together has the effect of making them act as one. This results in a significant increase in the thermomechanical stresses induced on peripheral …

Modeling And Validation Of 4h-Sic Low Voltage Mosfets For Integrated Circuit Design, Shamim Ahmed

Graduate Theses and Dissertations

Silicon Carbide is a promising wide bandgap material and gradually becoming the first choice of semiconductor for high density and high efficiency power electronics in medium voltage range (500-1500V). SiC has also excellent thermal conductivity and the devices fabricated with the material can operate at high temperature (~ 400 ⁰C). Thus, a power electronic system built with SiC devices requires less cooling requirement and saves board space and cost. The high temperature applications of SiC material can also be extended to space exploration, oil and gas rigging, aerospace and geothermal energy systems for data acquisition, sensing and instrumentation and power …

Design And Test Of A Gate Driver With Variable Drive And Self-Test Capability Implemented In A Silicon Carbide Cmos Process, Matthew Barlow

Graduate Theses and Dissertations

Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace those of standard silicon (Si) parts. The improved physical characteristics allow for faster switching, lower on-resistance, and temperature performance. The capabilities unleashed by these devices allow for higher efficiency switch-mode converters as well as the advance of power electronics into new high-temperature regimes previously unimaginable with silicon devices. While SiC power devices have reached a relative level of maturity, recent work has pushed the temperature boundaries of control electronics further with silicon carbide integrated circuits.

The primary requirement to ensure rapid switching of power MOSFETs was a gate …

Development Of An Oxygen Saturation Monitoring System By Embedded Electronics, Manikandan Venkatesan Gomathy

Graduate Theses and Dissertations

Measuring Oxygenation of blood (SaO2) plays a vital role in patient’s health monitoring. This is often measured by pulse oximeter, which is standard measure during anesthesia, asthma, operative and post-operative recoveries. Despite all, monitoring Oxygen level is necessary for infants with respiratory problems, old people, and pregnant women and in other critical situations.

This paper discusses the process of calculating the level of oxygen in blood and heart-rate detection using a non-invasive photo plethysmography also called as pulsoximeter using the MSP430FG437 microcontroller (MCU). The probe uses infrared lights to measure and should be in physical contact with any peripheral points …

Investigation Of The Optical Properties Of Pbse/Pbx Nanocrystals For Photodetector Applications, Haley Ann Morris

Graduate Theses and Dissertations

Lead selenide and lead selenide/lead sulfide core/shell nanocrystals were investigated for use in near infrared photodetectors. A colloidal synthesis method was used for both the core and core/shell configurations. The lead sulfide shell was examined in order to mitigate oxidation of the nanoparticle surface. Absorbance and photoluminescence spectra were measured at room temperature and 77 K, respectively. Transmission electron microscopy images were also obtained to confirm crystallography and size. Bulk lead selenide was simulated in WIEN2k utilizing the linear-augmented plane wave method of solving density functional theory to better understand the electronic structure of PbSe. The crystal structure, electron density, …

Si-Based Germanium-Tin (Gesn) Emitters For Short-Wave Infrared Optoelectronics, Seyed Amir Ghetmiri

Graduate Theses and Dissertations

Conventional integrated electronics have reached a physical limit, and their efficiency has been influenced by the generated heat in the high-density electronic packages. Integrated photonic circuits based on the highly developed Si complementary-metal-oxide-semiconductor (CMOS) infrastructure was proposed as a viable solution; however, Si-based emitters are the most challenging component for the monolithic integrated photonic circuits. The indirect bandgap of silicon and germanium is a bottleneck for the further development of photonic and optoelectronic integrated circuits.

The Ge1-xSnx alloy, a group IV material system compatible with Si CMOS technology, was suggested as a desirable material that theoretically exhibits a direct bandgap …

Design, Fabrication And Measurement Of A Plasmonic Enhanced Terahertz Photoconductive Antenna, Nathan Matthias Burford

Graduate Theses and Dissertations

Generation of broadband terahertz (THz) pulses from ultrafast photoconductive antennas (PCAs) is an attractive method for THz spectroscopy and imaging. This provides a wide frequency bandwidth (0.1-4 THz) as well as the straightforward recovery of both the magnitude and phase of the transmitted and/or reflected signals. The achieved output THz power is low, approximately a few microwatts. This is due to the poor conversion of the femtosecond laser used as the optical pump to useable current inside the antenna semiconducting material. The majority of THz power comes from the photocarriers generated within ~ 100 nm distance from the antenna electrodes. …

Growth Of Gesn And Gepb Alloy Films Using Thermal Evaporator, Hakimah Alahmed

Graduate Theses and Dissertations

Silicon is the most important semiconductor material used in microelectronic devices. As the number of transistors keep doubling every 24 months (Moore’s law), transistors continue scaling down in size, electrical interconnect is reaching its limits to keep up with the scaling down rate in integrated circuits. These limitations are related to interconnect density and power consumption. Hence, replacing electrical interconnect with optical interconnect on the chip or between chips has the ability to overcome these limitations. However, silicon has poor light emitting efficiency, and other substitutes such as III-V materials are not suitable due to high cost, lattice mismatch, and …

Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks

Graduate Theses and Dissertations

The first-ever 1.7kV 8A SiC physics-based compact SPICE model is developed for behavior prediction, modeling and simulation of the GeneSiC “Super” Junction Transistor. The model implements Gummel-Poon based equations and adds a quasi-saturation collector series resistance representation from a 1.2 kV, 6 A SiC bipolar junction transistor model developed in Hangzhou, China. The model has been validated with the GA08JT17-247 device data representing both static and dynamic characteristics from GeneSiC. Parameter extraction was performed in IC-CAP and results include plots showing output characteristics, capacitance versus voltage (C-V), and switching characteristics for 25 °C, 125 °C, and 175 °C temperatures.

Compact Modeling Of Sic Insulated Gate Bipolar Transistors, Sonia Perez

Graduate Theses and Dissertations

This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog-A formats. Initially, the existing MAST model mobility equations were updated using recently referenced silicon carbide (SiC) data. The updated MAST model was then verified for each device tested. Specifically, the updated MAST model was verified for the following IGBT devices and operation temperatures: n-channel silicon at 25 ˚C and at 125 ˚C; n-channel SiC at 25 ˚C and at 175 ˚C; and p-channel SiC at 150 ˚C and at 250 ˚C. Verification was performed through capacitance, DC output …

Smart Gate Driver Design For Silicon (Si) Igbts And Silicon-Carbide (Sic) Mosfets, Abdulaziz Alghanem

Electrical Engineering Undergraduate Honors Theses

The design of an efficient and smart gate driver for a Si IGBT and SiC MOSFET is addressed in thesis. First, the main IGBT parameters are evaluated thoroughly in order to understand their effects in the design of the gate driver. All known consequences of previously designed gate drivers are studied in order to achieve an optimum gate driver. As a result of this assessment, the designer is able to determine whether adding or removing components from the gate driver circuit are beneficial or not. Then, exhaustive research is done to identify suitable integrated circuits to use for the power …

High Temperature Silicon Carbide Mixed-Signal Circuits For Integrated Control And Data Acquisition, Ashfaqur Rahman

Graduate Theses and Dissertations

Wide bandgap semiconductor materials such as gallium nitride (GaN) and silicon carbide have grown in popularity as a substrate for power devices for high temperature and high voltage applications over the last two decades. Recent research has been focused on the design of integrated circuits for protection and control in these wide bandgap materials. The ICs developed in SiC and GaN can not only complement the power devices in high voltage and high frequency applications, but can also be used for standalone high temperature control and data acquisition circuitry.

This dissertation work aims to explore the possibilities in high temperature …