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Efficient Operation Of Direct Coupled Solar Home Pv System: A Case Of Solar Home Pv System Installed In Dodoma, Tanzania, Sarah P. Ayeng'o 2025 University of Dar es Salaam

Efficient Operation Of Direct Coupled Solar Home Pv System: A Case Of Solar Home Pv System Installed In Dodoma, Tanzania, Sarah P. Ayeng'o

Tanzania Journal of Engineering and Technology (TJET)

Direct coupled Photovoltaic (PV) system is a common topology among most of the off-grid communities in the world. This topology has less components hence resulting in low investment costs. However, it suffers much losses when battery operating voltage is far from maximum power point voltage of PV modules. This scenario can be attributed by different factors such as; variation in solar radiation, load profile and temperature. Efficient operation of these systems is required in order to reduce losses. Usually in direct coupled system, PV modules are connected in parallel with batteries through a charge controller hence making PV output to …


Photonic Crystal Devices For Chip Scale Sensing Systems, Yudong Chen 2025 University of Texas at Arlington

Photonic Crystal Devices For Chip Scale Sensing Systems, Yudong Chen

Electrical Engineering Dissertations - Archive

This thesis investigates the design and integration of photonic crystal (PC) structures for compact, high-performance optical platforms, with a focus on applications in gas sensing, on-chip lasers, and flat optics. Chapter 1 introduces the fundamental principles of PC design and simulation, highlighting their potential to replace bulky components in micro-gas chromatography (µGC) systems through miniaturization and integration. Chapter 2 explores PC-based nanobeam lasers, including the Lambda-Scale Embedded Active-Region Photonic Crystal (LEAP) laser, which demonstrates strong optical confinement and energy-efficient operation, with energy consumption as low as 8 fJ/bit. These laser designs are evaluated for their suitability in low-power, high-speed on-chip …


Surface Morphology And Moisture Adsorption/Desorption Characteristics Of Hybrid-Dielectric Moisture Sensors, Ronak Ali 2025 University of Kentucky

Surface Morphology And Moisture Adsorption/Desorption Characteristics Of Hybrid-Dielectric Moisture Sensors, Ronak Ali

Theses and Dissertations--Electrical and Computer Engineering

Relative humidity sensors are used for high-humidity measurement. Moisture sensors, or dew point sensors are used for low-humidity measurement (< 1 ppmv). The dissertation contains two parts of studies. In the first part, the effect of surface morphology on the response speed of moisture sensors is studied. Moisture sensors using α-Al2O3 films as porous dielectric materials deposited by anodic spark deposition are studied. In this part of the study, a variety of small pores have been studied to investigate the response speed of moisture sensors. Three different surface morphologies have been studied using scanning electron microscopy. One …


Lifecycle Carbon Footprint And Sustainability Evaluation Of Dram-Based Processing In Memory Computing Architectures, Samrat Pravin Patel 2025 University of Kentucky

Lifecycle Carbon Footprint And Sustainability Evaluation Of Dram-Based Processing In Memory Computing Architectures, Samrat Pravin Patel

Theses and Dissertations--Electrical and Computer Engineering

The use of computing technologies has significantly enhanced several aspects of our day-to-day lives. But it has still revealed significant environmental concerns, primarily related to greenhouse gas emissions and energy consumption. Initially, the primary environmental problems associated with computing were energy consumption during device operation. However, with the rapid advancement of technology and increasing computational demands, attention has shifted towards the embodied carbon footprint. This term refers to the total greenhouse gas emissions throughout a product’s lifecycle from the extraction of raw materials to end-of-life processing. It has become increasingly significant in the context of manufacturing integrated circuits (ICs), such …


Epitaxial Quantum Dot Scintillators With Monolithic Photodetector Integration: Physics, Fabrication And Characterization Of Materials And Devices, Allan Oreave Minns 2025 University at Albany, State University of New York

Epitaxial Quantum Dot Scintillators With Monolithic Photodetector Integration: Physics, Fabrication And Characterization Of Materials And Devices, Allan Oreave Minns

Electronic Theses & Dissertations (2024 - present)

This dissertation discloses the physics, fabrication, and characterization of high-performance scintillator detectors based on epitaxial InAs quantum dots (QDs) in GaAs. The detector crystals grown include monolithically integrated In0.35GaAs photodetectors with Al0.92-0.6In0.03-0.35Ga0.05As metamorphic buffer layers (MBL). A device fabrication process was developed for the lithographic patterning, chemical etching, contact metallization and readout integration of materials grown by means of molecular beam epitaxy (MBE) on 3-inch GaAs (001) wafers. Low capacitance integration with readout electronics was achieved through wire bonds to custom printed circuit boards (PCBs) with commercial components.

The relationship between device …


Stack Bonding In Pentacene And Its Derivatives, Craig A. Bayse 2025 Old Dominion University

Stack Bonding In Pentacene And Its Derivatives, Craig A. Bayse

Chemistry & Biochemistry Faculty Publications

Understanding the nature of π-stacking interactions is important to molecular recognition, self-assembly, and organic semiconductors. The stack bonding order (SBO) model of π-stacking has shown that the conformations of dimers occur when the combinations of monomer MOs are overall stack bonding in character. DFT calculations show that minima found on the potential energy surface for the π-stacked dimers of pentacene and perfluoropentacene occur when the dimer MOs are constructed from combinations of monomer MOs with an allowed SBO. An ex-amination of the MOs of π-stacked dimers extracted from X-ray structures of alkynyl derivatives like TIPS-pentacene pack at one or more …


Advancing 4h-Silicon Carbide Power Mosfets Through Three-Dimensional Technology Computer Aided Design Optimization, Skylar A. deBoer 2025 University at Albany, State University of New York

Advancing 4h-Silicon Carbide Power Mosfets Through Three-Dimensional Technology Computer Aided Design Optimization, Skylar A. Deboer

Electronic Theses & Dissertations (2024 - present)

This research contributes to the advancement of 1.2 kV 4H-Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) through the development and implementation of sophisticated three-dimensional Technology Computer-Aided Design (3D TCAD) methodologies. These advanced simulation techniques enable comprehensive evaluation of innovative unit cell architectures that remain inaccessible to conventional two-dimensional (2D) TCAD approaches. By leveraging these 3D simulation capabilities, this work facilitates significant improvements in both the performance and reliability of next-generation wide-bandgap power devices.

Power devices convert electrical energy between different forms throughout the power grid making them essential in applications ranging from personal electronics, electric vehicles, renewable energy systems, industrial …


The Impact Of Chromium Ion Implantation On Ald Lead Chalcogenide Thin Films, Haifeng Cong, Charlotte Poterie, Jean Francois Barbot, Helmut Baumgart 2025 Old Dominion University

The Impact Of Chromium Ion Implantation On Ald Lead Chalcogenide Thin Films, Haifeng Cong, Charlotte Poterie, Jean Francois Barbot, Helmut Baumgart

Electrical & Computer Engineering Faculty Publications

Inherently the synthesis of semiconducting materials by Atomic Layer Deposition ALD produces only intrinsic undoped films which require the introduction of small amounts of impurities for doping to change them into extrinsic semiconductors. Apart from various in-situ diffusion doping techniques like delta doping during the ALD process, post deposition doping by ion implantation affords the best control of dose and doping profile. The present study investigates the impact of 180 keV Cr+ ion implantation on the properties of semiconducting ALD lead chalcogenide thin films to improve their thermoelectric figure of merit. The implantation was accomplished with 180 keV Chromium …


Old, Flat, And Slow: Interior Greenland Snow And Ice Dynamics Revealed With Gnss, Derek James Pickell 2025 Dartmouth College

Old, Flat, And Slow: Interior Greenland Snow And Ice Dynamics Revealed With Gnss, Derek James Pickell

Dartmouth College Ph.D Dissertations

The interior dry snow zone region of the Greenland Ice Sheet can no longer be confidently considered a reliably melt-free region, yet our ability to investigate and quantify the dynamic nature of this landscape is hindered by its remoteness. To overcome this challenge, this work describes a novel, low-cost, low-power GNSS (positioning) instrument that enables simultaneous measurements of (1) ice accumulation/ablation changes and (2) 3D ice flow. Deployed in a dense array, these GNSS instruments achieve similar performance to scientific-grade, commercial options (cm- to mm- precision), yet operate at < 60% of the power and < 34% of the hardware cost. Over a three year campaign, we analyze spatial and temporal patterns of accumulation in this region, using a technique called GNSS interferometric reflectometry (GNSS-IR). Observations with this technique show low bias and high precision relative to a validation study (-2.1 ± 2.9 cm), while we also demonstrate for the first time how GNSS-IR can reveal cm- to m- scale surface roughness, a critical yet often neglected measurement due to longstanding observational challenges. Patterns of accumulation show a spatial dependence linked to surface slope (~+0.7 mm w.e. km^-1 westward away from the divide) while surface roughness has a temporal dependence likely driven by wintertime high winds. Next, we combine GNSS-IR surface heights with the geodetic position time series of the antenna to derive surface elevation changes, which are compared to coincident ICESat-2 laser altimetry elevations. Observations of the surface show a millimeter-level relative bias and cm-level precision (-0.9 ± 3.8 cm) compared with the satellite altimeter, demonstrating for the first time that this technique is a viable ground-truthing method, while ICESat-2 performance has continued to exceed mission performance requirements. Finally, we examine station positioning through time to show a sensitivity to dynamic ice thinning and firn densification, two parameters than cannot be finely observed with space-based methods in this region. Together, these results provide the first ground‑based, high‑resolution picture of interior ice‑sheet change—capturing accumulation, roughness, surface elevation, and strain in one unified dataset. Our approach dramatically lowers logistical barriers, opening the interior of Greenland (and other remote regions) to sustained, quantitative monitoring at unprecedented spatiotemporal resolution.


Ge/Sige Quantum Wells: Material For The Post-Moore Era, Troy Alexander Hutchins-Delgado 2024 University of New Mexico - Main Campus

Ge/Sige Quantum Wells: Material For The Post-Moore Era, Troy Alexander Hutchins-Delgado

Optical Science and Engineering ETDs

This dissertation demonstrates high-quality germanium quantum wells on a 200 mm silicon wafer platform, enabling novel device possibilities. Partnering with a commercial silicon-germanium epitaxy supplier, we obtained shallow, undoped germanium quantum wells with high-crystalline quality, confirmed through x-ray diffraction, secondary ion mass spectroscopy, high-resolution scanning transmission electron microscopy, and energy dispersive x-ray spectroscopy. Hall bar devices fabricated on single quantum wells revealed that surface preparation can tune transport properties while maintaining peak mobilities around 105 cm2V−1s−1. Manganese-germanide spintronic contacts were integrated via solid-state reaction, with contact quality assessed through Schottky diodes, transfer length …


How Does Original And Disruptive Innovation Lead Modern Industrial System: Insights From Revolutionary Frontier Of Next-Generation Chip Manufacturing Technology, Jiang YU, Yue GUO, Shiguang LI 2024 Institutes of Science and Development, Chinese Academy of Sciences, Beijing 100190, China; School of Public Policy and Management, University of Chinese Academy of Sciences, Beijing 100049, China

How Does Original And Disruptive Innovation Lead Modern Industrial System: Insights From Revolutionary Frontier Of Next-Generation Chip Manufacturing Technology, Jiang Yu, Yue Guo, Shiguang Li

Bulletin of Chinese Academy of Sciences (Chinese Version)

Original and disruptive innovation is the foundation for tackling key technological challenges and nurturing the development of new forms of productive forces. The breakthrough of FinFET (Fin field-effect transistor) technology, a frontier manufacturing process for chips, represents a typical example of original and disruptive innovation. This breakthrough extended Moore’s Law, catalyzed the transition of semiconductor manufacturing from 2D to 3D structures, and significantly advanced the global high-tech industry, positioning it at the core of international technological competition. This study reviews the breakthrough journey of FinFET technology, specifically focusing on its development stages from “scientific discovery—formation of new technological pathways—systematization of …


Addressing Output Ripples In Low-Power Cmos-Based Multistage Dc-Dc Boost Converters For Self-Powered Electrochemical Sensors Applications, Sameh O. Abdellatif, Ahmat Abdelwahid 2024 The British University in Egypt

Addressing Output Ripples In Low-Power Cmos-Based Multistage Dc-Dc Boost Converters For Self-Powered Electrochemical Sensors Applications, Sameh O. Abdellatif, Ahmat Abdelwahid

Electrical Engineering

No abstract provided.


Enhancing Radiation Performance Of A 0.18 Μm Cmos 60 Ghz On-Chip Double-Slot Vivaldi Antenna, Elsayed Ibrahim Elsaidy Mr., Amr H. Hussein Prof.Dr., Mustafa M. Abd Elnaby Prof. Dr. 2024 Faculty of Engineering Tanta University, Tanta, Egypt.

Enhancing Radiation Performance Of A 0.18 Μm Cmos 60 Ghz On-Chip Double-Slot Vivaldi Antenna, Elsayed Ibrahim Elsaidy Mr., Amr H. Hussein Prof.Dr., Mustafa M. Abd Elnaby Prof. Dr.

Journal of Engineering Research

This paper presents the design of a 60-GHz double-slot Vivaldi antenna (DSVA) using standard 0.18 µm CMOS technology. The antenna's two slots are uniformly excited in both amplitude and phase by a coplanar waveguide (CPW) power divider. A double-Y balun feeding structure is also used to transition from the CPW to the coplanar slot line (CPS). Two techniques are investigated to enhance the antenna's radiation characteristics. The first technique involves incorporating equal corrugations along the edges of the flare aperture, resulting in a significant gain enhancement of 0.9 dBi and an improvement in radiation efficiency by 7%. The second technique …


Experimentally Validated Dynamic Equivalent Circuit Model Of Perovskite Solar Cells: Utilizing Machine Learning Algorithms For Parameter Extraction Using I-V And C-V Characteristics, Zahraa Ismail, eman sawires, fathy amer, Sameh O. Abdellatif 2024 The Electrical Engineering department and FabLab, Centre for Emerging Learning Technologies CELT, British University in Egypt (BUE), Cairo, 11387, Egypt

Experimentally Validated Dynamic Equivalent Circuit Model Of Perovskite Solar Cells: Utilizing Machine Learning Algorithms For Parameter Extraction Using I-V And C-V Characteristics, Zahraa Ismail, Eman Sawires, Fathy Amer, Sameh O. Abdellatif

Electrical Engineering

No abstract provided.


Numerical Modelling Of Carrier Transport In Organic Field Effect Transistors, Sameh O. Abdellatif, salma ahmed 2024 The British University in Egypt

Numerical Modelling Of Carrier Transport In Organic Field Effect Transistors, Sameh O. Abdellatif, Salma Ahmed

Electrical Engineering

No abstract provided.


Gratings In Optical Waveguides And Lasers, Weida Zhang 2024 Southern Methodist University

Gratings In Optical Waveguides And Lasers, Weida Zhang

Electrical Engineering Theses and Dissertations

Gratings play a crucial role in Distributed Bragg reflector (DBR) lasers, influencing their performance and characteristics. The focus of this work is aimed at the design of DBR lasers that significantly impact the laser's spectral and temporal behavior, making it a key component in optimizing DBR laser functionality.

The SMU developed grating software, compared with commercially available photonics software, has improved accuracy and much smaller computation times. The improved accuracy and reduced computation times compared with commercial photonics software occur because commercial software is typically based on numerical methods such as finite-difference time-domain (FDTD), eigenmode expansion and beam propagation methods …


Cornerstone Of Digital Economy: Challenges And Opportunities Of Ic Technologies, Jiang XU, Wei ZHANG 2024 The Hong Kong University of Science and Technology (Guangzhou), Guangzhou 511453, China

Cornerstone Of Digital Economy: Challenges And Opportunities Of Ic Technologies, Jiang Xu, Wei Zhang

Bulletin of Chinese Academy of Sciences (Chinese Version)

As the cornerstone of the digital economy in the information age, the essence of integrated circuit (IC) chips is to represent and process information by using physical phenomena. The IC challenges faced by China are not only in the field of fabrication, but also in the fields of electronics design automation (EDA) and talent training. Based on a review of the background and current situations of IC technologies, this study analyzes advantages, issues that need attention, and potential areas of technological breakthrough in the Guangdong-Hong Kong-Macao Greater Bay Area.


Fine-Tuning Cesium Lead Chloride Perovskite Field-Effect Transistors For Sensing Applications: Bridging Numerical Modeling And Experimental Validation, Gehad Ali, Reem Mahmoud, Mohamed Wafeek, motaz yousef, Sameh O. Abdellatif 2024 The British University in Egypt

Fine-Tuning Cesium Lead Chloride Perovskite Field-Effect Transistors For Sensing Applications: Bridging Numerical Modeling And Experimental Validation, Gehad Ali, Reem Mahmoud, Mohamed Wafeek, Motaz Yousef, Sameh O. Abdellatif

Electrical Engineering

No abstract provided.


Advanced Transistor-Based Dynamic Equivalent Circuit Modeling Of Mesostructured-Based Solar Cells, eman Farouk Sawires, Sameh O. Abdellatif 2024 Helwan University

Advanced Transistor-Based Dynamic Equivalent Circuit Modeling Of Mesostructured-Based Solar Cells, Eman Farouk Sawires, Sameh O. Abdellatif

Electrical Engineering

This study introduces a pioneering transistor-based equivalent circuit model explicitly tailored for mesostructured-based solar cells, primarily focusing on dye-sensitized solar cells (DSSCs) and perovskite solar cells (PSCs). By incorporating the experimental data spanning various inorganic, organic, and hybrid solar cell technologies across different optical injection levels, the model aims to provide a comprehensive understanding of the electrical behavior of these advanced photovoltaic devices. In addition to the circuit schematic, a Verilog-A script was created to elucidate the behavior of the cells, facilitating the utilization of such a block by the research community in developing interfacing circuits and implementing dc–dc converters …


Dual Base Sige Is-Hbt For Use In Biosensing Applications, Liam Stephen Hayes 2024 California Polytechnic State University, San Luis Obispo

Dual Base Sige Is-Hbt For Use In Biosensing Applications, Liam Stephen Hayes

Master's Theses

The proposed research is for a novel SiGe-based Ion-Sensitive Dual Hetero-junction Bipolar Transistor (IS-HBT) to be used in both trans-dermal biological sensing as well as Lab-on-Chip (LOC) applications. The end goals for the device designed are two: For one, the research done for this work will be used to substantiate the claims made by Zafar et al. [1] that an HBT-style structure is better suited for biosensing application rather than a conventional Field Effect Transistor (FET) based geometries. Secondly, it provides the final element to be integrated along with a selectivity membrane, as well as with a reverse-iontophoresis system to …


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