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Articles 31 - 60 of 87
Full-Text Articles in Physics
Comparison Of Plume Dynamics For Laser Ablated Metals: Al And Ti, William A. Bauer, Glen P. Perram, Timothy Haugan
Comparison Of Plume Dynamics For Laser Ablated Metals: Al And Ti, William A. Bauer, Glen P. Perram, Timothy Haugan
Faculty Publications
Emissive plumes from pulsed laser ablation of bulk Ti and Al from KrF laser irradiation at laser fluence up to 3.5 J/cm2 and argon background pressures of 0–1 Torr have been observed using gated intensified charged-coupled device imagery. Mass loss for Ti increases from 0.1 to 0.8 μg/pulse as pulse energy increase from 174 to 282 mJ/pulse (35–170 photons/atom) and decreases by ∼30% as pressure increases from vacuum to 1 Torr. Early plume energies are described by the free expansion velocities of 1.57 ± 0.02 and of 1.81 ± 0.07 cm/μs for Ti and Al, respectively, …
Demonstration Of Versatile Whispering-Gallery Micro-Lasers For Remote Refractive Index Sensing, Lei Wan, Hengky Chandrahalim, Jian Zhou
Demonstration Of Versatile Whispering-Gallery Micro-Lasers For Remote Refractive Index Sensing, Lei Wan, Hengky Chandrahalim, Jian Zhou
Faculty Publications
We developed chip-scale remote refractive index sensors based on Rhodamine 6G (R6G)-doped polymer micro-ring lasers. The chemical, temperature, and mechanical sturdiness of the fused-silica host guaranteed a flexible deployment of dye-doped polymers for refractive index sensing. The introduction of the dye as gain medium demonstrated the feasibility of remote sensing based on the free-space optics measurement setup. Compared to the R6G-doped TZ-001, the lasing behavior of R6G-doped SU-8 polymer micro-ring laser under an aqueous environment had a narrower spectrum linewidth, producing the minimum detectable refractive index change of 4 x 10−4 RIU. The maximum bulk refractive index sensitivity (BRIS) …
Copper-Doped Lithium Triborate (Lib3o5) Crystals: A Photoluminescence, Thermoluminescence, And Electron Paramagnetic Resonance Study, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Copper-Doped Lithium Triborate (Lib3o5) Crystals: A Photoluminescence, Thermoluminescence, And Electron Paramagnetic Resonance Study, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
When doped with copper ions, lithium borate materials are candidates for use in radiation dosimeters. Copper-doped lithium tetraborate (Li2B4O7) crystals have been widely studied, but little is known thus far about copper ions in lithium triborate (LiB3O5) crystals. In the present investigation, Cu+ ions (3d10) were diffused into an undoped LiB3O5 crystal at high temperature. These ions occupy both Li+ and interstitial positions in the crystal. A photoluminescence (PL) band peaking near 387 nm and a photoluminescence excitation (PLE) band peaking near 273 nm verify that a portion of these Cu+ ions are located at regular Li+ sites. After an …
Effects Of Edge Inclination Angles On Whispering-Gallery Modes In Printable Wedge Microdisk Lasers, Cong Chen, Lei Wan, Hengky Chandrahalim
Effects Of Edge Inclination Angles On Whispering-Gallery Modes In Printable Wedge Microdisk Lasers, Cong Chen, Lei Wan, Hengky Chandrahalim
Faculty Publications
The ink-jet technique was developed to print the wedge polymer microdisk lasers. The characterization of these lasers was implemented using a free-space optics measurement setup. It was found that disks of larger edge inclination angles have a larger free spectral range (FSR) and a lower resonance wavelength difference between the fundamental transverse electric (TE) and transverse magnetic (TM) whispering-gallery modes (WGMs). This behavior was also confirmed with simulations based on the modified Oxborrow’s model with perfectly matched layers (PMLs), which was adopted to accurately calculate the eigenfrequencies, electric field distributions, and quality parameters of modes in the axisymmetric microdisk resonators. …
Use Of A Novel Infrared Wavelength-Tunable Laser Mueller-Matrix Polarimetric Scatterometer To Measure Nanostructured Optical Materials, Jason C. Vap, Stephen E. Nauyoks, Michael R. Benson, Michael A. Marciniak
Use Of A Novel Infrared Wavelength-Tunable Laser Mueller-Matrix Polarimetric Scatterometer To Measure Nanostructured Optical Materials, Jason C. Vap, Stephen E. Nauyoks, Michael R. Benson, Michael A. Marciniak
Faculty Publications
Nanostructured optical materials, for example, metamaterials, have unique spectral, directional, and polarimetric properties. Samples designed and fabricated for infrared (IR) wavelengths have been characterized using broadband instruments to measure specular polarimetric transmittance or reflectance as in ellipsometry or integrated hemisphere transmittance or reflectance. We have developed a wavelength-tunable IR Mueller-matrix (Mm) polarimetric scatterometer which uses tunable external-cavity quantum-cascade lasers (EC-QCLs) to tune onto and off of the narrowband spectral resonances of nanostructured optical materials and performed full polarimeteric and directional evaluation to more fully characterize their behavior. Using a series of EC-QCLs, the instrument is tunable over 4.37-6.54 μm wavelengths …
On-Chip, High-Sensitivity Temperature Sensors Based On Dye-Doped Solid-State Polymer Microring Lasers, Lei Wan, Hengky Chandrahalim, Cong Chen, Qiushu Chen, Ting Mei, Yuji Oki, Naoya Nishimura, Lingjie Jay Guo, Xudong Fan
On-Chip, High-Sensitivity Temperature Sensors Based On Dye-Doped Solid-State Polymer Microring Lasers, Lei Wan, Hengky Chandrahalim, Cong Chen, Qiushu Chen, Ting Mei, Yuji Oki, Naoya Nishimura, Lingjie Jay Guo, Xudong Fan
Faculty Publications
We developed a chip-scale temperature sensor with a high sensitivity of 228.6 pm/°C based on a rhodamine 6G (R6G)-doped SU-8 whispering-gallery mode microring laser. The optical mode was largely distributed in a polymer core layer with a 30 μm height that provided detection sensitivity, and the chemically robust fused-silica microring resonator host platform guaranteed its versatility for investigating different functional polymer materials with different refractive indices. As a proof of concept, a dye-doped hyperbranched polymer (TZ-001) microring laser-based temperature sensor was simultaneously developed on the same host wafer and characterized using a free-space optics measurement setup. Compared to TZ-001, the …
Electron Paramagnetic Resonance Study Of Neutral Mg Acceptors In Β-Ga2O3 Crystals, Brant E. Kananen, Larry E. Halliburton, Elizabeth M. Scherrer, K. T. Stevens, G. K. Foundos, K. B. Chang, Nancy C. Giles
Electron Paramagnetic Resonance Study Of Neutral Mg Acceptors In Β-Ga2O3 Crystals, Brant E. Kananen, Larry E. Halliburton, Elizabeth M. Scherrer, K. T. Stevens, G. K. Foundos, K. B. Chang, Nancy C. Giles
Faculty Publications
Electron paramagnetic resonance (EPR) is used to directly observe and characterize neutral Mg acceptors (Mg0Ga) in a β-Ga2O3 crystal. These acceptors, best considered as small polarons, are produced when the Mg-doped crystal is irradiated at or near 77 K with x rays. During the irradiation, neutral acceptors are formed when holes are trapped at singly ionized Mg acceptors (Mg−Ga). Unintentionally present Fe3+ (3d5) and Cr3+ (3d3) transition-metal ions serve as the corresponding electron traps. The hole is localized in a nonbonding p orbital on a threefold-coordinated oxygen ion …
Dual Role Of Sb Ions As Electron Traps And Hole Traps In Photorefractive Sn2P2S6 Crystals, Brant E. Kananen, Eric M. Golden, Sergey A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Dual Role Of Sb Ions As Electron Traps And Hole Traps In Photorefractive Sn2P2S6 Crystals, Brant E. Kananen, Eric M. Golden, Sergey A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
Doping photorefractive single crystals of Sn2P2S6 with antimony introduces both electron and hole traps. In as-grown crystals, Sb3+ (5s2) ions replace Sn2+ ions. These Sb3+ ions are either isolated (with no nearby perturbing defects) or they have a charge-compensating Sn2+ vacancy at a nearest-neighbor Sn site. When illuminated with 633 nm laser light, isolated Sb3+ ions trap electrons and become Sb2+ (5s25p1) ions. In contrast, Sb3+ ions with an adjacent Sn vacancy trap holes during illumination. The hole is primarily …
Identification Of The Zinc-Oxygen Divacancy In Zno Crystals, Maurio S. Holston, Eric M. Golden, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Identification Of The Zinc-Oxygen Divacancy In Zno Crystals, Maurio S. Holston, Eric M. Golden, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
An electron paramagnetic resonance (EPR) spectrum in neutron-irradiated ZnO crystals is assigned to the zinc-oxygen divacancy. These divacancies are observed in the bulk of both hydrothermally grown and seeded-chemical-vapor-transport-grown crystals after irradiations with fast neutrons. Neutral nonparamagnetic complexes consisting of adjacent zinc and oxygen vacancies are formed during the irradiation. Subsequent illumination below ∼150 K with 442 nm laser light converts these (V2−Zn − V2+O)0 defects to their EPR-active state (V−Zn − V2+O)+ as electrons are transferred to donors. The resulting photoinduced S = 1/2 spectrum of the …
System And Method For Identifying Electrical Properties Of Integrate Circuits, Mary Y. Lanzerotti
System And Method For Identifying Electrical Properties Of Integrate Circuits, Mary Y. Lanzerotti
AFIT Patents
A new method for displaying electrical properties for integrated circuit (IC) layout designs provides for improved human visualization of those properties and comparison of as designed layout design parameters to as specified layout design parameters and to as manufactured layout parameters. The method starts with a circuitry as designed layout in a first digital format, extracts values for electrical properties from that circuitry as designed layout then annotates those values back into the first digital format. The annotated circuitry as designed layout is then converted from the first digital format to a second digital format that can be converted to …
Fusion Of Renewable Ring Resonator Lasers And Ultrafast Laser Inscribed Photonic Waveguides, Hengky Chandrahalim, Stephen C. Rand, Xudong Fan
Fusion Of Renewable Ring Resonator Lasers And Ultrafast Laser Inscribed Photonic Waveguides, Hengky Chandrahalim, Stephen C. Rand, Xudong Fan
Faculty Publications
We demonstrated the monolithic integration of reusable and wavelength reconfigurable ring resonator lasers and waveguides of arbitrary shapes to out-couple and guide laser emission on the same fused-silica chip. The ring resonator hosts were patterned by a single-mask standard lithography, whereas the waveguides were inscribed in the proximity of the ring resonator by using 3-dimensional femtosecond laser inscription technology. Reusability of the integrated ring resonator – waveguide system was examined by depositing, removing, and re-depositing dye-doped SU-8 solid polymer, SU-8 liquid polymer, and liquid solvent (toluene). The wavelength reconfigurability was validated by employing Rhodamine 6G (R6G) and 3,3′-Diethyloxacarbocyanine iodide (CY3) …
Improved Terahertz Modulation Using Germanium Telluride (Gete) Chalcogenide Thin Films, Alexander H. Gwin, Christopher H. Kodama, Tod V. Laurvick, Ronald Coutu Jr., Philip F. Taday
Improved Terahertz Modulation Using Germanium Telluride (Gete) Chalcogenide Thin Films, Alexander H. Gwin, Christopher H. Kodama, Tod V. Laurvick, Ronald Coutu Jr., Philip F. Taday
Faculty Publications
We demonstrate improved terahertz (THz) modulation using thermally crystallized germanium telluride (GeTe) thin films. GeTe is a chalcogenide material that exhibits a nonvolatile, amorphous to crystalline phase change at approximately 200 °C, as well as six orders of magnitude decreased electrical resistivity. In this study, amorphous GeTe thin films were sputtered on sapphire substrates and then tested using THz time-domain spectroscopy (THz-TDS). The test samples, heated in-situ while collecting THz-TDS measurements, exhibited a gradual absorbance increase, an abrupt nonvolatile reduction at the transition temperature, followed by another gradual increase in absorbance. The transition temperature was verified by conducting similar thermal …
Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton
Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton
Faculty Publications
Electron paramagnetic resonance (EPR) is used to identify a new and unique photoactive silicon-related point defect in single crystals of rutile TiO2. The importance of this defect lies in its assignment to interstitial silicon ions and the unexpected establishment of silicon impurities as a major hole trap in TiO2. Principal g values of this new S=1/2 center are 1.9159, 1.9377, and 1.9668 with principal axes along the [¯110],[001], and [110] directions, respectively. Hyperfine structure in the EPR spectrum shows the unpaired spin interacting equally with two Ti nuclei and unequally with two Si nuclei. These silicon …
Theoretical Investigation Of Stabilities And Optical Properties Of Si12C12 Clusters, Xiaofeng F. Duan, Larry W. Burggraf
Theoretical Investigation Of Stabilities And Optical Properties Of Si12C12 Clusters, Xiaofeng F. Duan, Larry W. Burggraf
Faculty Publications
By sorting through hundreds of globally stable Si12C12 isomers using a potential surface search and using simulated annealing, we have identified low-energy structures. Unlike isomers knit together by Si–C bonds, the lowest energy isomers have segregated carbon and silicon regions that maximize stronger C–C bonding. Positing that charge separation between the carbon and silicon regions would produce interesting optical absorption in these cluster molecules, we used time-dependent density functional theory to compare the calculated optical properties of four isomers representing structural classes having different types of silicon and carbon segregation regions. Absorptions involving charge transfer between segregated …
Reconfigurable Solid-State Dye-Doped Polymer Ring Resonator Lasers, Hengky Chandrahalim, Xudong Fan
Reconfigurable Solid-State Dye-Doped Polymer Ring Resonator Lasers, Hengky Chandrahalim, Xudong Fan
Faculty Publications
This paper presents wavelength configurable on-chip solid-state ring lasers fabricated by a single-mask standard lithography. The single- and coupled-ring resonator hosts were fabricated on a fused-silica wafer and filled with 3,3′-Diethyloxacarbocyanine iodide (CY3), Rhodamine 6G (R6G) and 3,3′-Diethylthiadicarbocyanine iodide (CY5)-doped polymer as the reconfigurable gain media. The recorded lasing threshold was ~220 nJ/mm2 per pulse for the single-ring resonator laser with R6G, marking the lowest threshold shown by solid-state dye-doped polymer lasers fabricated with a standard lithography process on a chip. A single-mode lasing from a coupled-ring resonator system with the lasing threshold of ~360 nJ/mm2 per pulse …
Monolithic Optofluidic Ring Resonator Lasers Created By Femtosecond Laser Nanofabrication, Hengky Chandrahalim, Qiushu Chen, Ali A. Said, Mark Dugan, Xudong Fan
Monolithic Optofluidic Ring Resonator Lasers Created By Femtosecond Laser Nanofabrication, Hengky Chandrahalim, Qiushu Chen, Ali A. Said, Mark Dugan, Xudong Fan
Faculty Publications
We designed, fabricated, and characterized a monolithically integrated optofluidic ring resonator laser that is mechanically, thermally, and chemically robust. The entire device, including the ring resonator channel and sample delivery microfluidics, was created in a block of fused-silica glass using a 3-dimensional femtosecond laser writing process. The gain medium, composed of Rhodamine 6G (R6G) dissolved in quinoline, was flowed through the ring resonator. Lasing was achieved at a pump threshold of approximately 15 μJ/mm2. Detailed analysis shows that the Q-factor of the optofluidic ring resonator is 3.3 × 104, which is limited by both solvent …
Sulfur Vacancies In Photorefractive Sn2P2S6 Crystals, Eric M. Golden, Sergey A. Basun, A. A. Grabar, I. M. Stoika, Nancy C. Giles, D. R. Evans, Larry E. Halliburton
Sulfur Vacancies In Photorefractive Sn2P2S6 Crystals, Eric M. Golden, Sergey A. Basun, A. A. Grabar, I. M. Stoika, Nancy C. Giles, D. R. Evans, Larry E. Halliburton
Faculty Publications
A photoinduced electron paramagnetic resonance (EPR) spectrum in single crystals of Sn2P2S6 (SPS) is assigned to an electron trapped at a sulfur vacancy. These vacancies are unintentionally present in undoped SPS crystals and are expected to play an important role in the photorefractive behavior of the material. Nonparamagnetic sulfur vacancies are formed during the initial growth of the crystal. Subsequent illumination below 100 K with 442 nm laser light easily converts these vacancies to EPR-active defects. The resulting S = 1/2 spectrum shows well-resolved and nearly isotropic hyperfine interactions with two P ions and two Sn ions. Partially resolved interactions …
Copper Doping Of Zno Crystals By Transmutation Of 64Zn To 65Cu: An Electron Paramagnetic Resonance And Gamma Spectroscopy Study, Matthew C. Recker, John W. Mcclory, Maurio S. Holston, Eric M. Golden, Nancy C. Giles, Larry E. Halliburton
Copper Doping Of Zno Crystals By Transmutation Of 64Zn To 65Cu: An Electron Paramagnetic Resonance And Gamma Spectroscopy Study, Matthew C. Recker, John W. Mcclory, Maurio S. Holston, Eric M. Golden, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
Transmutation of 64Zn to 65Cu has been observed in a ZnO crystal irradiated with neutrons. The crystal was characterized with electron paramagnetic resonance (EPR) before and after the irradiation and with gamma spectroscopy after the irradiation. Major features in the gamma spectrum of the neutron-irradiated crystal included the primary 1115.5 keV gamma ray from the 65Zn decay and the positron annihilation peak at 511 keV. Their presence confirmed the successful transmutation of 64Zn nuclei to 65Cu. Additional direct evidence for transmutation was obtained from the EPR of Cu2+ ions (where 63Cu and 65 …
Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton
Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton
Faculty Publications
Electron paramagnetic resonance (EPR) is used to investigate the triplet (S = 1) ground state of the neutral oxygen vacancy in bulk rutile TiO2 crystals. This shallow donor consists of an oxygen vacancy with two nearest-neighbor, exchange-coupled 3+ ions located along the [001] direction and equidistant from the vacancy. The spins of the two trapped electrons, one at each 3+ ion, align parallel to give the S = 1 state. These neutral oxygen vacancies are formed near 25 K in as-grown oxidized TiO2 crystals by illuminating with sub-band-gap 442 nm laser light. The angular dependence of the EPR …
Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben
Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben
Faculty Publications
We find Mn surface segregation for single crystals of Mn doped Li2B4O7, nominally Li1.95Mn0.05B4O7(001), but as the temperature increases, evidence of this Mn surface segregation diminishes significantly. At room temperature, the surface photovoltaic charging is significant for this pyroelectric material but is quenched at a temperature well below that seen for the undoped Li2B4O7 samples. The suppression of surface charging in the region of 120 °C that accompanies the temperature of Mn dissolution in the bulk of Li2B4 …
Distributed Spacing Stochastic Feature Selection And Its Application To Textile Classification, Jeffrey D. Clark
Distributed Spacing Stochastic Feature Selection And Its Application To Textile Classification, Jeffrey D. Clark
Theses and Dissertations
Many situations require the need to quickly and accurately locate dismounted individuals in a variety of environments. In conjunction with other dismount detection techniques, being able to detect and classify clothing (textiles) provides a more comprehensive and complete dismount characterization capability. Because textile classification depends on distinguishing between different material types, hyperspectral data, which consists of several hundred spectral channels sampled from a continuous electromagnetic spectrum, is used as a data source. However, a hyperspectral image generates vast amounts of information and can be computationally intractable to analyze. A primary means to reduce the computational complexity is to use feature …
Ir Nonlinear Absorption Leading To Laser-Induced Damage In Ge & Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha
Ir Nonlinear Absorption Leading To Laser-Induced Damage In Ge & Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha
Faculty Publications
Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 μm for the first time. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 μm and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al2O3 anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for ps or ns pulses, respectively. Wavelength-dependant …
Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Faculty Publications
Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same …
An Analytical Model Of Nanometer Scale Viscoelastic Properties Of Polymer Surfaces Measured Using An Atomic Force Microscope, Jacob B. Goldberg
An Analytical Model Of Nanometer Scale Viscoelastic Properties Of Polymer Surfaces Measured Using An Atomic Force Microscope, Jacob B. Goldberg
Theses and Dissertations
The United States Air Force and the Department of Defense is increasingly interested in nanomaterials. To study these materials, one needs to measure the mechanics of materials on the nanoscale. Over the past few decades the atomic force microscope (AFM) has been used in various methods to establish local surface properties at the nanoscale. In particular, surface elasticity measurements are crucial to understanding nanoscale surface properties. Problems arise, however, when measuring soft surfaces such as polymers and biological specimens, because these materials have a more complex viscoelastic response. This research focuses on modeling an AFM dynamic nanoindentation experiment intended to …
Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha
Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha
Faculty Publications
Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 µm for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 µm and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al2O3 anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond …
All Solid-State Mid-Ir Laser Development, Nonlinear Absorption Investigation And Laser-Induced Damage Study, Torrey J. Wagner
All Solid-State Mid-Ir Laser Development, Nonlinear Absorption Investigation And Laser-Induced Damage Study, Torrey J. Wagner
Theses and Dissertations
In this research, nonlinear optical absorption coefficients and laser-induced damage thresholds are measured in Ge and GaSb, which are materials that are used in IR detectors. Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, two-photon and free-carrier absorption coefficients are measured in Ge and GaSb at 2.05 and 2.5 μm for the first time. At these wavelengths, nonlinear absorption is the primary damage mechanism, and damage thresholds at picosecond and nanosecond pulse widths were measured and agreed well with modeled thresholds using experimentally measured parameters. The damage threshold for a single-layer Al …
Hard Collisions In Rubidium Using Sub-Doppler Spectroscopy, Douglas E. Thornton
Hard Collisions In Rubidium Using Sub-Doppler Spectroscopy, Douglas E. Thornton
Theses and Dissertations
To better understand the laser kinetics of an alkali gain medium, hard collisions, or velocity-changing collisions, has been studied and a velocity-changing collisional rate has been calculated. Previous works have studied these collisions, but no rate has been calculated. Using the precise tool of sub-Doppler spectroscopy, atomic hard collisions can be observed. The collected spectra are fitted with two different line shapes to demonstrate the accuracy of this method. From the fits, the number of hard collisions can be extracted. The time scale of the hard collisions in rubidium is interpolated by varying the chopping frequency of the pump beam, …
Rubidium Recycling In A High Intensity Short Duration Pulsed Alkali Laser, Wooddy S. Miller
Rubidium Recycling In A High Intensity Short Duration Pulsed Alkali Laser, Wooddy S. Miller
Theses and Dissertations
Laser induced fluorescence was used to study how pump pulse duration and alkali recycle time effects maximum power output in a Diode Pumped Alkali Laser (DPAL) system. A high intensity short pulsed pump source was used to excited rubidium atoms inside a DPAL-type laser. The maximum output power of the laser showed a strong dependence upon the temporal width of the pump pulse in addition to the input pump intensity. A linear relationship was observed between the maximum output power and the pulse width due to the effective lifetime of the excited state, defined as the time it takes for …
Afm-Patterned 2-D Thin-Film Photonic Crystal Analyzed By Complete Angle Scatter, Nicholas C. Herr
Afm-Patterned 2-D Thin-Film Photonic Crystal Analyzed By Complete Angle Scatter, Nicholas C. Herr
Theses and Dissertations
The purpose of this research was to use an atomic force microscope (AFM) to generate a 2-D square array of sub-wavelength surface features from a single material over a region large enough to permit optical characterization. This work is an extension of previous AFIT nano-patterning work and is in response to the small subunit sizes demanded for the production of optical metamaterials and photonic crystals. A diamond nano-indentation AFM probe was used to produce a 325-μm by 200-μm array of indentations in a 120-nm thick polystyrene film deposited on silicon. Indentation spacing of 400 nm produced well-defined surface features with …
Optical And Electrical Characterization Of Bulk Grown Indium-Gallium-Arsenide Alloys, Austin C. Bergstrom
Optical And Electrical Characterization Of Bulk Grown Indium-Gallium-Arsenide Alloys, Austin C. Bergstrom
Theses and Dissertations
Advances in crystal growth techniques have allowed increased quality in growth of bulk ternary InxGa1-xAs. Here, the optical and electrical properties of samples grown through the vertical Bridgman (or multi-component zone melting growth) method have been investigated through photoluminescence spectroscopy and Hall effect measurements. Indium mole fractions varied from 0.75 for 1. Hall effect measurements at temperatures ranging from 10 to 300 K revealed moderate n-type doping with carrier concentrations ranging from 1.5 to 9.6×1016 cm-3 at 10 to 15 K. Carriers from deep donor levels became appreciable between 50 and 100 K. Hall …