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Full-Text Articles in Physics
Deep Donors And Acceptors In Β-Ga2O3 Crystals: Determination Of The Fe2+/3+ Level By A Noncontact Method, Christopher A. Lenyk, Trevor A . Gustafson, Larry E. Halliburton, Nancy C. Giles
Deep Donors And Acceptors In Β-Ga2O3 Crystals: Determination Of The Fe2+/3+ Level By A Noncontact Method, Christopher A. Lenyk, Trevor A . Gustafson, Larry E. Halliburton, Nancy C. Giles
Faculty Publications
Electron paramagnetic resonance (EPR), infrared absorption, and thermoluminescence (TL) are used to determine the Fe2+/3+ level in Fe-doped β-Ga2O3 crystals. With these noncontact spectroscopy methods, a value of 0.84 ± 0.05 eV below the conduction band is obtained for this level. Our results clearly establish that the E2 level observed in deep level transient spectroscopy (DLTS) experiments is due to the thermal release of electrons from Fe2+ ions. The crystals used in this investigation were grown by the Czochralski method and contained large concentrations of Fe acceptors and Ir donors, and trace amounts of Cr …
Copper-Doped Lithium Triborate (Lib3o5) Crystals: A Photoluminescence, Thermoluminescence, And Electron Paramagnetic Resonance Study, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Copper-Doped Lithium Triborate (Lib3o5) Crystals: A Photoluminescence, Thermoluminescence, And Electron Paramagnetic Resonance Study, Brant E. Kananen, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton
Faculty Publications
When doped with copper ions, lithium borate materials are candidates for use in radiation dosimeters. Copper-doped lithium tetraborate (Li2B4O7) crystals have been widely studied, but little is known thus far about copper ions in lithium triborate (LiB3O5) crystals. In the present investigation, Cu+ ions (3d10) were diffused into an undoped LiB3O5 crystal at high temperature. These ions occupy both Li+ and interstitial positions in the crystal. A photoluminescence (PL) band peaking near 387 nm and a photoluminescence excitation (PLE) band peaking near 273 nm verify that a portion of these Cu+ ions are located at regular Li+ sites. After an …
Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips
Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips
Theses and Dissertations
Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …
Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay
Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay
Theses and Dissertations
In the world of semiconductor photonic device fabrication, one important objective may be to extract as much light as possible from the device. In these devices, photons are created when electrons recombine with holes by transitioning from a high-energy state to a lower one. Unfortunately, electron-hole recombination does not always result in the formation of a photon. There are three basic types of recombination: the first results in the formation of a photon and is called radiative recombination; and the second and third, known as Shockley-Read-Hall and Auger recombination, result in the heating of the device and do not produce …
Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew
Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew
Theses and Dissertations
The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation …
Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Theses and Dissertations
Low temperature photoluminescence (PL) and electroluminescence (EL) measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and AlxGa1-xAs (x=0. 1, 0.3) pn-junctions. The rare-earth (RE) emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition (MOCVD) method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane (SiH4) flow, growth time, and …
The Excitation Mechanism Of Praseodymium-Doped Semiconductors, Paul L. Thee
The Excitation Mechanism Of Praseodymium-Doped Semiconductors, Paul L. Thee
Theses and Dissertations
This study on praseodymium Pr luminescence in AlxGa1-xAs was conducted to enhance the understanding of the excitation mechanism. Pr was implanted at 390 keV with doses from 5 x 1012 to 5 x 1013 sq cm into AlxGa1-xAs x0.0 to 0.50 wafers which were annealed using the rapid thermal annealing RTA method. Low temperature photoluminescence PL was conducted using an Ar-ion laser and Ge detector. PL emissions of Pr from all hosts include peaks near 1.3 and 1.6 µm which are assigned to the intra-4f transitions of 1G4 yielding 3H5 …