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Materials Science and Engineering

Air Force Institute of Technology

Semiconductor lasers

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Full-Text Articles in Physics

Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay Jun 2001

Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay

Theses and Dissertations

In the world of semiconductor photonic device fabrication, one important objective may be to extract as much light as possible from the device. In these devices, photons are created when electrons recombine with holes by transitioning from a high-energy state to a lower one. Unfortunately, electron-hole recombination does not always result in the formation of a photon. There are three basic types of recombination: the first results in the formation of a photon and is called radiative recombination; and the second and third, known as Shockley-Read-Hall and Auger recombination, result in the heating of the device and do not produce …


The Effects Of Optical Feedback On Polarization Of Vertical Cavity Surface Emitting Lasers, Gregory J. Vansuch Dec 1993

The Effects Of Optical Feedback On Polarization Of Vertical Cavity Surface Emitting Lasers, Gregory J. Vansuch

Theses and Dissertations

Vertical Cavity Surface Emitting Lasers VCSELs are a type of semiconductor laser with a cavity oriented orthogonally to the planes of material growth. These lasers differ from conventional edge emitting lasers in several important ways. They have symmetric output beams and they are easily built into two dimensional arrays, making them very attractive as photonic components. The characteristic of interest in this thesis is polarization. While the asymmetric cavities of edge emitters exhibit a clear preference for light polarized in a particular direction, the cylindrically symmetric cavity of a VCSEL has no clear preference. Therefore, it should be relatively easy …