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Full-Text Articles in Physics

Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha Oct 2010

Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha

Faculty Publications

Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 µm for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 µm and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al2O3 anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond …


All Solid-State Mid-Ir Laser Development, Nonlinear Absorption Investigation And Laser-Induced Damage Study, Torrey J. Wagner Sep 2010

All Solid-State Mid-Ir Laser Development, Nonlinear Absorption Investigation And Laser-Induced Damage Study, Torrey J. Wagner

Theses and Dissertations

In this research, nonlinear optical absorption coefficients and laser-induced damage thresholds are measured in Ge and GaSb, which are materials that are used in IR detectors. Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, two-photon and free-carrier absorption coefficients are measured in Ge and GaSb at 2.05 and 2.5 μm for the first time. At these wavelengths, nonlinear absorption is the primary damage mechanism, and damage thresholds at picosecond and nanosecond pulse widths were measured and agreed well with modeled thresholds using experimentally measured parameters. The damage threshold for a single-layer Al …


Hard Collisions In Rubidium Using Sub-Doppler Spectroscopy, Douglas E. Thornton Mar 2010

Hard Collisions In Rubidium Using Sub-Doppler Spectroscopy, Douglas E. Thornton

Theses and Dissertations

To better understand the laser kinetics of an alkali gain medium, hard collisions, or velocity-changing collisions, has been studied and a velocity-changing collisional rate has been calculated. Previous works have studied these collisions, but no rate has been calculated. Using the precise tool of sub-Doppler spectroscopy, atomic hard collisions can be observed. The collected spectra are fitted with two different line shapes to demonstrate the accuracy of this method. From the fits, the number of hard collisions can be extracted. The time scale of the hard collisions in rubidium is interpolated by varying the chopping frequency of the pump beam, …


Rubidium Recycling In A High Intensity Short Duration Pulsed Alkali Laser, Wooddy S. Miller Mar 2010

Rubidium Recycling In A High Intensity Short Duration Pulsed Alkali Laser, Wooddy S. Miller

Theses and Dissertations

Laser induced fluorescence was used to study how pump pulse duration and alkali recycle time effects maximum power output in a Diode Pumped Alkali Laser (DPAL) system. A high intensity short pulsed pump source was used to excited rubidium atoms inside a DPAL-type laser. The maximum output power of the laser showed a strong dependence upon the temporal width of the pump pulse in addition to the input pump intensity. A linear relationship was observed between the maximum output power and the pulse width due to the effective lifetime of the excited state, defined as the time it takes for …


Afm-Patterned 2-D Thin-Film Photonic Crystal Analyzed By Complete Angle Scatter, Nicholas C. Herr Mar 2010

Afm-Patterned 2-D Thin-Film Photonic Crystal Analyzed By Complete Angle Scatter, Nicholas C. Herr

Theses and Dissertations

The purpose of this research was to use an atomic force microscope (AFM) to generate a 2-D square array of sub-wavelength surface features from a single material over a region large enough to permit optical characterization. This work is an extension of previous AFIT nano-patterning work and is in response to the small subunit sizes demanded for the production of optical metamaterials and photonic crystals. A diamond nano-indentation AFM probe was used to produce a 325-μm by 200-μm array of indentations in a 120-nm thick polystyrene film deposited on silicon. Indentation spacing of 400 nm produced well-defined surface features with …


Optical And Electrical Characterization Of Bulk Grown Indium-Gallium-Arsenide Alloys, Austin C. Bergstrom Mar 2010

Optical And Electrical Characterization Of Bulk Grown Indium-Gallium-Arsenide Alloys, Austin C. Bergstrom

Theses and Dissertations

Advances in crystal growth techniques have allowed increased quality in growth of bulk ternary InxGa1-xAs. Here, the optical and electrical properties of samples grown through the vertical Bridgman (or multi-component zone melting growth) method have been investigated through photoluminescence spectroscopy and Hall effect measurements. Indium mole fractions varied from 0.75 for 1. Hall effect measurements at temperatures ranging from 10 to 300 K revealed moderate n-type doping with carrier concentrations ranging from 1.5 to 9.6×1016 cm-3 at 10 to 15 K. Carriers from deep donor levels became appreciable between 50 and 100 K. Hall …