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Optical Investigation Of Molecular Beam Epitaxy AlXGa1-XN To Determine Material Quality, Judith L. Mcfall

Theses and Dissertations

The purpose of this research was to determine the quality of AIGaN samples with various mole fractions of aluminum doped with silicon. The samples utilized for this study were composed of an AIN buffer layer sandwiched between the sapphire substrate and AIGaN epilayer grown by molecular beam epitaxy (MBE). Cathodoluminescence (CL) and photoluminescence (PL) were employed to determine the mole fraction of aluminum in each sample. These techniques also gave insight into the material's nonuniformity, defects, and impurities. CL was run at 4 different beam energies (2,5,10, & 15 keV) with four different currents (1,10,50, & 90 µA) for the …