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Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter
Theses and Dissertations
Low temperature photoluminescence (PL) and electroluminescence (EL) measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and AlxGa1-xAs (x=0. 1, 0.3) pn-junctions. The rare-earth (RE) emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition (MOCVD) method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane (SiH4) flow, growth time, and …
Optical Characterization Of Indium Arsenide Antimonide Semiconductors Grown By Molecular Beam Epitaxy, Michael A. Marciniak
Optical Characterization Of Indium Arsenide Antimonide Semiconductors Grown By Molecular Beam Epitaxy, Michael A. Marciniak
Theses and Dissertations
The material parameters and crystalline quality of undoped, MBE-grown InAs1-xSbx nearly lattice-matched to (100) GaSb (-0.617% ≤ Δ a-a ≤ +0.708%) similar to material used for mid-infrared semiconductor lasers were determined by optical characterization. Absorption measurements at temperatures between 6-295 K determined the energy gap and wavelength-dependent absorption coefficient for each sample. The compositional dependence of the energy gap was anomalous when compared to previously reported data, suggesting phase separation existed in the material. The samples were also studied by temperature- and excitation-dependent photoluminescence (PL), which, for the majority of cases, showed only a single band-edge peak, …