Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Discipline
-
- Electrical and Electronics (14)
- Nanotechnology Fabrication (12)
- Materials Science and Engineering (10)
- Physical Sciences and Mathematics (10)
- Electromagnetics and Photonics (9)
-
- Physics (9)
- Semiconductor and Optical Materials (9)
- Mechanical Engineering (7)
- Nanoscience and Nanotechnology (7)
- Electro-Mechanical Systems (5)
- Atomic, Molecular and Optical Physics (3)
- Condensed Matter Physics (3)
- Engineering Physics (3)
- Nuclear Engineering (3)
- Optics (3)
- Other Electrical and Computer Engineering (3)
- VLSI and Circuits, Embedded and Hardware Systems (3)
- Computer Engineering (2)
- Quantum Physics (2)
- Astrophysics and Astronomy (1)
- Biomedical (1)
- Biomedical Devices and Instrumentation (1)
- Biomedical Engineering and Bioengineering (1)
- Chemical Engineering (1)
- Chemistry (1)
- Civil and Environmental Engineering (1)
- Computer and Systems Architecture (1)
- Institution
- Keyword
-
- Microelectromechanical systems (8)
- Photoluminescence (5)
- Spintronics (5)
- GaN (4)
- BeMgZnO (3)
-
- InGaN (3)
- Microelectronics (3)
- GeSn (2)
- LED (2)
- Light emitting diodes (2)
- Luminescence (2)
- Nanomagnetism (2)
- Nanomagnets (2)
- Resonators (2)
- SAW (2)
- Semiconductors (2)
- Silicon carbide (2)
- Straintronics (2)
- VCSEL (2)
- ZnO (2)
- #antcenter (1)
- ASIC (1)
- ATPG (1)
- Acoustic FMR (1)
- Acoustic cavity (1)
- Acoustic devices--Design (1)
- Activation (1)
- Actuators (1)
- Airplanes--Wings (1)
- AlGaN (1)
Articles 61 - 64 of 64
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis
Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis
Theses and Dissertations
Typical undoped bulk grown SiC shows n- or p-type conductivity due to residual impurities such as nitrogen, boron, or aluminum. In order to produce high resistivity material, vanadium can be used as a compensating dopant. Since vanadium is an amphoteric dopant in SiC, it produces either a donor state, VSi4+(3d1) → VSi5+(3d0), or an acceptor state, VSi4+(3d1) → VSi3+(3d2). Thus, vanadium doping can compensate both n- and p-type conductivity. In this work, vanadium doped and undoped 4H- and 6H-SiC grown …
Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills
Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills
Theses and Dissertations
A mathematical model of the influence on electric field screening arising from a single impurity in a wide bandgap semiconductor has been numerically investigated and compared with analytically derived solutions. The parameter set chosen to perform the comparison of analytical solution and numerical solution is based upon a bismuth silicate crystal. Both the analytical calculations and the numerical calculations are an attempt to mathematically model the internal electric field within a semiconductor. Two types of impurities were looked at: a single donor level and a single trap impurity level. In general, after an abrupt application of a voltage across the …
Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul
Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul
Theses and Dissertations
Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a 60Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of …
Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry
Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry
Theses and Dissertations
This research was an investigation into the suitability of a recently developed polymer, polyphenylene, as a material for integrated optical circuits (IOCs). Polymers show great promise in the area of IOCs because of material processing advantages, compatibility with most existing integrated circuit technology, and relatively strong nonlinear optical characteristics. This thesis contains an overview of: dielectric waveguides, linear and nonlinear directional coupler theory; various models useful in the design and analysis of optical waveguides; the fabrication of three different waveguide designs; the experimental apparatus and procedure used to optically characterize the waveguides; and the experimental results of the characterization. Waveguiding …