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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Characterization Of Reactive Ion Etch Chemistries Using Direct Write Lithography, Dylan T. Martin-Abood
Characterization Of Reactive Ion Etch Chemistries Using Direct Write Lithography, Dylan T. Martin-Abood
Theses and Dissertations
The DoD requires a variety of COTS and number of custom microelectronics to provide important functionality to critical military systems. Photolithography and DRIE are two techniques commonly used in the development of deep anisotropic features for the fabrication and modification of microelectronics and MEMS. However, standard photolithography techniques are ineffective for unique substrate geometries and DRIE processes require a chemical passivation step only applicable to Si substrates. This work confirmed the capability of RIE using DWL to perform deep, highly selective, anisotropic etching on elevated, non-circular substrates.
Using Multiple Mems Imus To Form A Distributed Inertial Measurement Unit, Ryan D. Hanson
Using Multiple Mems Imus To Form A Distributed Inertial Measurement Unit, Ryan D. Hanson
Theses and Dissertations
MEMS IMUs are readily available in quantity and have extraordinary advantages over conventional IMUs in size, weight, cost, and power consumption. However, the poor performance of MEMS IMUs limits their use in more demanding military applications. It is desired to use multiple distributed MEMS IMUs to simulate the performance of a single, more costly IMU, using the theory behind Gyro-Free IMUs. A Gyro-Free IMU (GF-IMU) uses a configuration of accelerometers only to measure the three accelerations and three angular rotations of a rigid body in 3-D space. Theoretically, almost any configuration of six distributed accelerometers yields sufficient measurements to solve …
Development And Packaging Of Microsystems Using Foundry Services, Jeffrey T. Butler
Development And Packaging Of Microsystems Using Foundry Services, Jeffrey T. Butler
Theses and Dissertations
Micro-electro-mechanical systems (MEMS) are a new and rapidly growing field of research. Several advances to the MEMS state of the art were achieved through design and characterization of novel devices. Empirical and theoretical model of polysilicon thermal actuators were developed to understand their behavior. The most extensive investigation of the Multi-User MEMS Processes (MUMPs) polysilicon resistivity was also performed. The first published value for the thermal coefficient of resistivity (TCR) of the MUMPs Poly 1 layer was determined as 1.25 x 10(exp -3)/K. The sheet resistance of the MUMPs polysilicon layers was found to be dependent on linewidth due to …