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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
High-Temperature Ferromagnetism In Transition Metal Implanted Wide-Bandgap Semiconductors, Jeremy A. Raley
High-Temperature Ferromagnetism In Transition Metal Implanted Wide-Bandgap Semiconductors, Jeremy A. Raley
Theses and Dissertations
Material with both semiconductor and magnetic properties, which is commonly called a dilute magnetic semiconductor (DMS), will prove most useful in the fabrication of spintronic devices. In order to produce a DMS at above room temperature, transition metals (TMs) were implanted into host semiconductors of p-GaN, Al0.35Ga0.65N, or ZnO. Magnetic hysteresis measurements using a superconducting quantum interference device (SQUID) magnetometer show that some of the material combinations clearly exhibit ferromagnetism above room temperature. The most promising materials for creating spintronic devices using ion implantation are p-GaN:Mn, Al0.35Ga0.65N:Cr, and Fe-implanted ZnO nanotips on …
Using Multiple Mems Imus To Form A Distributed Inertial Measurement Unit, Ryan D. Hanson
Using Multiple Mems Imus To Form A Distributed Inertial Measurement Unit, Ryan D. Hanson
Theses and Dissertations
MEMS IMUs are readily available in quantity and have extraordinary advantages over conventional IMUs in size, weight, cost, and power consumption. However, the poor performance of MEMS IMUs limits their use in more demanding military applications. It is desired to use multiple distributed MEMS IMUs to simulate the performance of a single, more costly IMU, using the theory behind Gyro-Free IMUs. A Gyro-Free IMU (GF-IMU) uses a configuration of accelerometers only to measure the three accelerations and three angular rotations of a rigid body in 3-D space. Theoretically, almost any configuration of six distributed accelerometers yields sufficient measurements to solve …