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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Design, Fabrication, Processing, And Testing Of Micro-Electro-Mechanical Chemical Sensors, Brian S. Freeman
Design, Fabrication, Processing, And Testing Of Micro-Electro-Mechanical Chemical Sensors, Brian S. Freeman
Theses and Dissertations
Chemical microsensors are a new field integrating chemical thin film technology with solid-state fabrication techniques to make devices capable of detecting chemicals in the environment. This thesis evaluated commercially available fabrication processes and numerous sensor designs for working chemical sensors. The commercial processes used were MUMPS for surface micromachined devices and MOSIS for bulk micromachined devices. Overall, eight fabrication runs and 29 different designs were made. Of these designs, two were shown to work effectively. Other designs failed due to fabrication problems and design errors that caused release problems. One design that worked was a surface micromachined chemoresistor with interdigitated …
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Theses and Dissertations
The p-channel In0.52Al0.48As-GaAs1-xSbx heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In0.52Al0.48As-GaAs1-xSbx p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In0.52Al0.48As-GaAs0.51Sb0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In0.52Al0.48. Third, high acceptor concentrations were obtained …