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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Theses and Dissertations
Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …
Fabrication Techniques For Iii-V Micro-Opto-Electro-Mechanical Systems, Jeremy A. Raley
Fabrication Techniques For Iii-V Micro-Opto-Electro-Mechanical Systems, Jeremy A. Raley
Theses and Dissertations
This thesis studies selective etching techniques for the development of AlxGa1-xAs micro-opto-electro-mechanical systems (MOEMS). New MEMS technology based on materials such as AlxGa1-xAs enables the development of micro-systems with embedded active micro-optical devices. Tunable micro-lasers and optical switching based on MOEMS technology will improve future wavelength division multiplexing (WDM) systems. WDM vastly increases the speed of military communications and sensor data processing. From my designs, structures are prepared by molecular beam epitaxy. I design a mask set for studies of crystal plane selectivity. I perform a series of experiments on the selective …