Engineering Commons^™

The Smart Helmet, Michael Walsh

Theses

This thesis addresses the design, development and testing of a wireless sensor network for a sports helmet. The objective is to monitor an athlete's physiology and also physical impacts using a sensor network. A detailed literature review is presented addressing currently available appropriate wireless technologies, sensors and their operation, packaging, interconnections and applications. It gives a brief introduction to each sensor used in the smart helmet, accelerometers, temperature sensors, heart rate and blood oxygen sensors, along with a review of possible sensors which could be added at a later stage. The specific sensors and other related components for the helmets …

High-Speed Digital And Mixed-Signal Components For X– And Ku–Band Direct Digital Synthesizers In Indium Phosphide Dhbt Technology, Steven Eugene Turner

Electronic Theses and Dissertations

Recently reported double heterojunction bipolar transistor (DHBT) devices manufactured in Indium Phosphide (InP) technology with ft and fmax both over 300 GHz enable advanced high-speed digital and mixed-signal circuits. In this thesis, the use of InP DHBT devices for high-speed accumulator circuits and X– and Ku–band direct digital synthesizer (DDS) circuits are investigated. At these frequencies, new technological challenges in the design of digital and mixed-signal circuits arise in areas including power consumption and clock distribution. This thesis addresses the speed/power tradeoffs in high-speed accumulator designs, the design of DDS circuits, and clock distribution simulation. The results of six accumulator …

Computational Modeling Of The Dielectric Barrier Discharge (Dbd) Device For Aeronautical Applications, Christopher S. Charles

Theses and Dissertations

Dielectric Barrier Discharge (DBD) type devices, when used as plasma actuators, have shown significant promise for use in many aeronautical applications. Experimentally, DBD actuator devices have been shown to induce motion in initially still air, and to cause re-attachment of air flow over a wing surface at a high angle of attack. This thesis explores the numerical simulation of the DBD device in both a lD and 2D environment. Using well established fluid equation techniques, along with the appropriate approximations for the regime under which these devices will be operating, computational results for various conditions and geometries are explored. In …

Air Gap Error Compensation For Coaxial Transmission Line Method Of Electromagnetic Material Characterization, Ronald G. Fehlen

Theses and Dissertations

This research analyzes material characterization measurements from 50 Mhz to 3.05 GHz where an axially symmetric air gap exists between the sample material and the inner or outer conductor. Higher order fields are excited by the air gap and are accounted for through modal analysis methods. A root search minimizes the difference between the calculated scattering parameters from the modal method and the experimentally measured scattering parameters. The root is the permittivity and permeability of the material. This method is tested with a non-magnetic material and a heavily loaded magnetic material. An error analysis based on dimension measurement uncertainty is …

High-Temperature Ferromagnetism In Transition Metal Implanted Wide-Bandgap Semiconductors, Jeremy A. Raley

Theses and Dissertations

Material with both semiconductor and magnetic properties, which is commonly called a dilute magnetic semiconductor (DMS), will prove most useful in the fabrication of spintronic devices. In order to produce a DMS at above room temperature, transition metals (TMs) were implanted into host semiconductors of p-GaN, Al_0.35Ga_0.65N, or ZnO. Magnetic hysteresis measurements using a superconducting quantum interference device (SQUID) magnetometer show that some of the material combinations clearly exhibit ferromagnetism above room temperature. The most promising materials for creating spintronic devices using ion implantation are p-GaN:Mn, Al_0.35Ga_0.65N:Cr, and Fe-implanted ZnO nanotips on …

Using Multiple Mems Imus To Form A Distributed Inertial Measurement Unit, Ryan D. Hanson

Theses and Dissertations

MEMS IMUs are readily available in quantity and have extraordinary advantages over conventional IMUs in size, weight, cost, and power consumption. However, the poor performance of MEMS IMUs limits their use in more demanding military applications. It is desired to use multiple distributed MEMS IMUs to simulate the performance of a single, more costly IMU, using the theory behind Gyro-Free IMUs. A Gyro-Free IMU (GF-IMU) uses a configuration of accelerometers only to measure the three accelerations and three angular rotations of a rigid body in 3-D space. Theoretically, almost any configuration of six distributed accelerometers yields sufficient measurements to solve …

Deviation Of Time-Resolved Luminescence Dynamics In Mwir Semiconductor Materials From Carrier Recombination Theory Predictions, Peter M. Johnson

Theses and Dissertations

Time resolved luminescence spectroscopy was used to characterize luminescence decay curves for a bulk InAs sample and an InAsSb type-I quantum-well sample over the first 3ns following excitation. The luminescence decay curves were then converted to carrier densities and used to find recombination coefficients that provided the least-squared-error solution of the rate equation describing carrier recombination. Recombination coefficients describing Shockley Read-Hall (A_SRH) radiative (B_rad) and Auger (C_Aug) recombination were determined at two different temperatures and four excitation powers, then analyzed for consistency and physical significance. For all of the resulting least …

Stress Analysis Of Silicon Carbide Microeletromechanical Systems Using Raman Spectroscopy, Stanley J. Ness

Theses and Dissertations

During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Government and industry are looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to analyze poly-silicon MEMS devices made with the Multi-User MEMS Process (MUMPS trade name). Micro-Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. …

Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.

Theses and Dissertations

Modern semiconductor devices are principally made using the element silicon. In recent years, silicon carbide (SiC), with its wide band-gap, high thermal conductivity, and radiation resistance, has shown prospects as a semiconductor material for use in high temperature and radiation environments such as jet engines and satellites. A limiting factor in the performance of many SiC semiconductor components is the presence of lattice defects formed at oxide dielectric junctions during processing. Recent theoretical work has used small quantum mechanical systems embedded in larger molecular mechanics structures to attempt to better understand SiC surfaces and bulk materials and their oxidation. This …

Total Dose Effects Of Ionizing And Non-Ionizing Radiation On Piezoresistive Pressure Transducer Chips, Samuel J. Willmon

Theses and Dissertations

The effects of ionizing and non ionizing radiation on the resistivity of silicon based, piezoresistive bulk micro-machined chips from pressure transducers were examined. Standard current-voltage (I-V) measurements were taken in-situ and post-irradiation during isothermal annealing at room temperature. One group of chips was irradiated to a maximum total gamma dose of lMrad(Si) in the 11,000 Ci (60) Co gamma cell at Ohio State University. The second group of chips was irradiated at the Ohio State University Research Reactor facility to a maximum total neutron dose of 4 Mrad(Si) using beam port Hi. The resistivity was shown to decrease during gamma …

Design For Signal Integrity In High Frequency, High Density Circuit Boards, Juan Manuel Talavera Martinez

Theses

The electronics market is continually seeking fast and small high performance products. The clock frequency in computer systems is often above 2GHz and new generations of laptops have considerably reduced in size. These features make printed circuit board (PCB) design more difficult than in the past.

This thesis is an investigation of the current design of high speed PCB. The complexity of this type of circuit makes the designer needs an extensive knowledge of the techniques used to generate a reliable signalling, in other words, signal integrity. To achieve this objective, the design community has to overcome several problem related …

Fabrication Techniques For Iii-V Micro-Opto-Electro-Mechanical Systems, Jeremy A. Raley

Theses and Dissertations

This thesis studies selective etching techniques for the development of Al_xGa_1-xAs micro-opto-electro-mechanical systems (MOEMS). New MEMS technology based on materials such as Al_xGa_1-xAs enables the development of micro-systems with embedded active micro-optical devices. Tunable micro-lasers and optical switching based on MOEMS technology will improve future wavelength division multiplexing (WDM) systems. WDM vastly increases the speed of military communications and sensor data processing. From my designs, structures are prepared by molecular beam epitaxy. I design a mask set for studies of crystal plane selectivity. I perform a series of experiments on the selective …

Design And Fabrication Of Micro-Electro-Mechanical Structures For Tunable Micro-Optical Devices, Michael C. Harvey

Theses and Dissertations

Tunable micro-optical devices are expected to be vital for future military optical communication systems. In this research I seek to optimize the design of a microelectromechanical (MEM) structure integrated with a III-V semiconductor micro-optical device. The resonant frequency of an integrated optical device, consisting of a Fabry-Perot etalon or vertical cavity surface emitting laser (VCSEL), may be tuned by applying an actuation voltage to the MEM Flexure, thereby altering the device's optical cavity length. From my analysis I demonstrate tunable devices compatible with conventional silicon 5V integrated circuit technology. My design for a Fabry-Perot etalon has a theoretical tuning range …

Investigation Of Ge2Te2Sb5 Chalcogenide Thin Film For Use As An Analog Memory, Travis F. Blake

Theses and Dissertations

This work investigates the feasibility of using Ge₂Te₂Sb₅ chalcogenide films for analog memory. Thick film chalcogenide memory devices provided by Ovonyx, Inc. are characterized to determine how well the devices meet the repeatability, stability and predictability criteria needed to accurately store analog data values. Chalcogenide memory devices take advantage of the phase-shifting nature of chalcogenide materials to store the analog data as a resistance level. An automated test system was developed to characterize the material and the prototype devices with the goal to determine the 1) non-destructive readability of the device at different resistance values; …

Development And Packaging Of Microsystems Using Foundry Services, Jeffrey T. Butler

Theses and Dissertations

Micro-electro-mechanical systems (MEMS) are a new and rapidly growing field of research. Several advances to the MEMS state of the art were achieved through design and characterization of novel devices. Empirical and theoretical model of polysilicon thermal actuators were developed to understand their behavior. The most extensive investigation of the Multi-User MEMS Processes (MUMPs) polysilicon resistivity was also performed. The first published value for the thermal coefficient of resistivity (TCR) of the MUMPs Poly 1 layer was determined as 1.25 x 10(exp -3)/K. The sheet resistance of the MUMPs polysilicon layers was found to be dependent on linewidth due to …

Surface Micromachined Pressure Sensors, William P. Eaton Iv

Electrical and Computer Engineering ETDs

Surface micromachined pressure sensors were designed, modeled, fabricated, and tested. They employed a piezoresistive transduction mechanism and were based upon circular diaphragms, which vary from 50 to 1000 μm in diameter and 1 to 2 μm in thickness. The piezoresistors were placed in Wheatstone bridge configurations to provide simple signal amplification and first order temperature compensation.

Of the different micromachining techniques, surface-micromachining has the advantage of being the most similar to integrated circuit manufacturing. Hence an existing IC equipment set can be used to create mechanical structures. Furthermore, the monolithic integration of a mechanical device with control electronics is simpler …

Analysis And Optimization Of A Banyan Based Atm Switch By Simulations, Syed Sohel Hussain

Dissertations and Theses

Asynchronous Transfer Mode (ATM) is proposed technology to create a broadband (high speed) packet switching network capable of transporting wide variety of services including voice, video and data in an integrated manner. The main concern in designing the switching fabrics used in this technology are speed, throughput, delay and variance of delay. We analyze the performance by simulations of ATM switch based on Banyan network in the uniform traffic condition.

We compare the analytical results obtained from three-state model Yan and Jenq to the simulation results. Based on observation of simulation results, we propose non-blocking first stage (NBFS) to increase …

Design, Fabrication, Processing, And Testing Of Micro-Electro-Mechanical Chemical Sensors, Brian S. Freeman

Theses and Dissertations

Chemical microsensors are a new field integrating chemical thin film technology with solid-state fabrication techniques to make devices capable of detecting chemicals in the environment. This thesis evaluated commercially available fabrication processes and numerous sensor designs for working chemical sensors. The commercial processes used were MUMPS for surface micromachined devices and MOSIS for bulk micromachined devices. Overall, eight fabrication runs and 29 different designs were made. Of these designs, two were shown to work effectively. Other designs failed due to fabrication problems and design errors that caused release problems. One design that worked was a surface micromachined chemoresistor with interdigitated …

Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii

Theses and Dissertations

The p-channel In_0.52Al_0.48As-GaAs_1-xSb_x heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In_0.52Al_0.48As-GaAs_1-xSb_x p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In_0.52Al_0.48As-GaAs_0.51Sb_0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In_0.52Al_0.48. Third, high acceptor concentrations were obtained …

Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul

Theses and Dissertations

Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a ⁶⁰Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of …

Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills

Theses and Dissertations

A mathematical model of the influence on electric field screening arising from a single impurity in a wide bandgap semiconductor has been numerically investigated and compared with analytically derived solutions. The parameter set chosen to perform the comparison of analytical solution and numerical solution is based upon a bismuth silicate crystal. Both the analytical calculations and the numerical calculations are an attempt to mathematically model the internal electric field within a semiconductor. Two types of impurities were looked at: a single donor level and a single trap impurity level. In general, after an abrupt application of a voltage across the …

Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis

Theses and Dissertations

Typical undoped bulk grown SiC shows n- or p-type conductivity due to residual impurities such as nitrogen, boron, or aluminum. In order to produce high resistivity material, vanadium can be used as a compensating dopant. Since vanadium is an amphoteric dopant in SiC, it produces either a donor state, V_Si⁴⁺(3d¹) → V_Si⁵⁺(3d⁰), or an acceptor state, V_Si⁴⁺(3d¹) → V_Si³⁺(3d²). Thus, vanadium doping can compensate both n- and p-type conductivity. In this work, vanadium doped and undoped 4H- and 6H-SiC grown …

Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry

Theses and Dissertations

This research was an investigation into the suitability of a recently developed polymer, polyphenylene, as a material for integrated optical circuits (IOCs). Polymers show great promise in the area of IOCs because of material processing advantages, compatibility with most existing integrated circuit technology, and relatively strong nonlinear optical characteristics. This thesis contains an overview of: dielectric waveguides, linear and nonlinear directional coupler theory; various models useful in the design and analysis of optical waveguides; the fabrication of three different waveguide designs; the experimental apparatus and procedure used to optically characterize the waveguides; and the experimental results of the characterization. Waveguiding …

The Characteristics Of Motion And Time Study In Taiwan's Electronics Industry And Their Relationship To Business Size, Betty Chang

Dissertations and Theses @ UNI

This research was conducted to investigate the characteristics of motion and time study implementation in Taiwan's electronics industry, as perceived by industrial engineers, and the relationships of these perceptions to business sizes of the firms. The questionnaires were mailed to 252 industrial engineers in the general firms group. A total of 206 (81.75%) instruments were returned. The questionnaires were then mailed to another 15 industrial engineers in the highly productive firms group. All the instruments (100%) were returned from the highly productive firm group. Telephone interviews were later conducted with six selected highly productive electronics firms to investigate their successful …

Study Of Direct Semiconductor Materials For An Optically Controlled Switch, Sung Taek Ko

Electrical & Computer Engineering Theses & Dissertations

A model for a bulk GaAs photoconductive switch has been developed and solved to determine the performance of the device in closing and opening switch applications. The GaAs material has been characterized by deep level transient spectroscopy (DLTS). Two electron traps (EL2 and EL5) and one hole trap (Cu_B} have been detected and were included in the model. Simulation studies are performed on several GaAs switch systems composed of different combinations and density of deep levels to investigate the influence of deep traps in a photoconductive switch system. The electron occupancy of each deep trap is traced in …

Design Of The Electronics And Optics Needed To Support Charge-Coupled Devices : A Project Report ..., Kah Yep Zee

University of the Pacific Theses and Dissertations

Over the last five years, charge-coupled devices (CCD) have been improved dramatically in terms of sensitivity, manufacturability and particularly, cost. This has enabled them to be used economically in many more industrial and commercial electronic imaging processes. They are found in products ranging from video cameras to satellite-based camera systems. This has sparked my interests in these devices, and with a great deal of encouragement from Dr. Turpin, I decided to base my Master's thesis/project on a CCD. The project was mainly based on the design of the electronics and optics needed to support a CCD. The particular circuit design …