Engineering Commons^™

Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula

Dissertations

Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …

Exfoliation, Synthesis, And Characterization Of Nanoscale Te, Takayuki Hironaka

Graduate Theses and Dissertations

Since the experimental discovery of graphene, two dimensional materials have enjoyed more attention and emphasis in academic research than nanowires, but the latter are an important area of study for creating 1D materials, or single atom chains, the next generation materials for advancing electronic devices. Atomically thin layers can be generated from 2D materials with weak bonds in one direction, and by applying this concept to one dimensional weakly bonded materials, we hypothesize that single atom chains with atomic-scale diameters may be produced. Tellurium (Te) and selenium (Se) have lattices consisting of spiral chains oriented along the c-axis, and each …

Skybridge-3d-Cmos: A Fine-Grained Vertical 3d-Cmos Technology Paving New Direction For 3d Ic, Jiajun Shi

Doctoral Dissertations

2D CMOS integrated circuit (IC) technology scaling faces severe challenges that result from device scaling limitations, interconnect bottleneck that dominates power and performance, etc. 3D ICs with die-die and layer-layer stacking using Through Silicon Vias (TSVs) and Monolithic Inter-layer Vias (MIVs) have been explored in recent years to generate circuits with considerable interconnect saving for continuing technology scaling. However, these 3D IC technologies still rely on conventional 2D CMOS’s device, circuit and interconnect mindset showing only incremental benefits while adding new challenges reliability issues, robustness of power delivery network design and short-channel effects as technology node scaling. Skybridge-3D-CMOS (S3DC) is …

Architecting Skybridge-Cmos, Mingyu Li

Masters Theses

As the scaling of CMOS approaches fundamental limits, revolutionary technology beyond the end of CMOS roadmap is essential to continue the progress and miniaturization of integrated circuits. Recent research efforts in 3-D circuit integration explore pathways of continuing the scaling by co-designing for device, circuit, connectivity, heat and manufacturing challenges in a 3-D fabric-centric manner. SkyBridge fabric is one such approach that addresses fine-grained integration in 3-D, achieves orders of magnitude benefits over projected scaled 2-D CMOS, and provides a pathway for continuing scaling beyond 2-D CMOS.

However, SkyBridge fabric utilizes only single type transistors in order to reduce manufacture …

Investigation Of Cds Nanowires And Planar Films For Enhanced Performance As Window Layers In Cds-Cdte Solar Cell Devices, Jianhao Chen

Theses and Dissertations--Electrical and Computer Engineering

Cadmium sulfide (CdS) and cadmium telluride (CdTe) are two leading semiconductor materials used in the fabrication of thin film solar cells of relatively high power conversion efficiency and low manufacturing cost. In this work, CdS/CdTe solar cells with a varying set of processing parameters and device designs were fabricated and characterized for comparative evaluation. Studies were undertaken to elucidate the effects of (i) each step in fabrication and (ii) parameters like thickness, sheet resistance, light absorptivity solution concentration, inert gas pressure etc. Best results were obtained when the thickness of CdS planar film for the window layer was in the …