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Full-Text Articles in Engineering
Analyzing Viability Of Blue Indium Gallium Nitride Leds For Use In Space Missions Using A Low Earth Orbit Cubesa, Bertrand Edward Wieliczko
Analyzing Viability Of Blue Indium Gallium Nitride Leds For Use In Space Missions Using A Low Earth Orbit Cubesa, Bertrand Edward Wieliczko
Graduate Theses, Dissertations, and Problem Reports
The payload capacity of spacecraft is constrained by the weight of the craft itself, including fuel and electronic systems. The protective measures used to shield onboard electronics from the harsh space environment, characterized by high-energy particles and significant temperature fluctuations, can further diminish the available payload capacity. This thesis explores the potential of naturally radiation-hard alternatives to commonly used electronic materials, such as Silicon, to reduce the need for shielding and other protective measures, thereby decreasing the weight and cost of space missions.
III-V semiconductor materials, such as Gallium Nitride (GaN), are known for their inherent resilience to temperature swings …
Study Of Thin Gan/Ingan/Gan Double Graded Structures For Future Photovoltaic Application, Mirsaeid Sarollahi
Study Of Thin Gan/Ingan/Gan Double Graded Structures For Future Photovoltaic Application, Mirsaeid Sarollahi
Graduate Theses and Dissertations
Indium gallium nitride (In_x Ga_(1-x) N) materials have displayed great potential for photovoltaic and optoelectronic devices due to their optical and electrical properties. Properties such as direct bandgap, strong bandgap absorption, thermal stability and high radiation resistance qualify them as great materials for photovoltaic devices. The tunable bandgap which absorbs the whole solar spectrum is the most significant feature which became attractive for scientists. The bandgap for these materials varies from 0.7 eV for InN to 3.4 eV for GaN covering from infrared to ultraviolet. In_x Ga_(1-x) N wurtzite crystal is grown on GaN buffer layer by Molecular Beam Epitaxy …
Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara
Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara
Theses and Dissertations
Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge1-xSnx alloy quantum-dots (QDs) are explored for potential visible to …
Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz
Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz
Theses and Dissertations
InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge1−xSnx alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving …
Optical Characterization Of Ingan Heterostructures For Blue Light Emitters And Vertical Cavity Lasers: Efficiency And Recombination Dynamics, Serdal Okur
Theses and Dissertations
OPTICAL CHARACTERIZATION OF INGAN HETEROSTRUCTURES FOR BLUE LIGHT EMITTERS AND VERTICAL CAVITY LASERS: EFFICIENCY AND RECOMBINATION DYNAMICS
By Serdal Okur, Ph.D.
A thesis submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy at Virginia Commonwealth University.
Virginia Commonwealth University, 2014.
Major Director: Ümit Özgür, Associate Professor, Electrical and Computer Engineering
This thesis explores radiative efficiencies and recombination dynamics in InGaN-based heterostructures and their applications as active regions in blue light emitters and particularly vertical cavities. The investigations focus on understanding the mechanism of efficiency loss at high injection as well as developing designs to mitigate …