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Electronic Devices and Semiconductor Manufacturing

Theses/Dissertations

2013

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Full-Text Articles in Engineering

Design, Fabrication And Characterization Of Plasmonic Fishnet Structures For The Enhancement Of Absorption In Thin Film Solar Cells, Sayan Seal Dec 2013

Design, Fabrication And Characterization Of Plasmonic Fishnet Structures For The Enhancement Of Absorption In Thin Film Solar Cells, Sayan Seal

Graduate Theses and Dissertations

Incorporating plasmonic structures into the back spacer layer of thin film solar cells (TFSCs) is an efficient way to improve their performance. The fishnet structure; which is a tunable, plasmonic light scatterer is used to enhance light absorption. Unlike other plasmonic particles that have been previously suggested, the fishnet is an electrically connected wire mesh and does not result in electric field localization, hence it results in greater absorption in the intrinsic Si layer. Unlike other designs, the fishnet structure is placed in the back spacer layer of the TFSC, so it does not block any incident light. There is …


Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan Dec 2013

Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan

Graduate Theses and Dissertations

This research work, for the first time, investigated metal semiconductor-metal (MSM) zine oxide (ZnO) nanorod based ultra-violet (UV) detectors having a Wheatstone bridge design with a high

responsivity at room temperature and above, as well as a responsivity that was largely independent of the change in ambient conditions. The ZnO nanorods which acted as the sensing element of the detector were grown by a chemical growth technique. Studies were conducted to determine the effects on ZnO nanorod properties by varying the concentration of the chemicals used for the rod growth. These studies showed how the rod diameter and the deposition …


Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant Dec 2013

Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant

Graduate Theses and Dissertations

High efficiency optoelectronic devices rely on high quality materials making up the device structure. The scope of this thesis investigates the effectiveness of rapid thermal annealing (RTA) at improving the material quality of GaAsBi/GaAs heterostructures. During the fabrication of a device, the contacts of the device had the rapid thermal annealing process accomplished to produce ohmic contacts and this research explored if this annealing treatment degraded the quantum wells that made up the active region of a device. To investigate these effects, a system to measure the photoluminescence of the material system was constructed utilizing Fourier Transform Infrared Spectroscopy. The …


Max Operation In Statistical Static Timing Analysis On The Non-Gaussian Variation Sources For Vlsi Circuits, Abu M. Baker Dec 2013

Max Operation In Statistical Static Timing Analysis On The Non-Gaussian Variation Sources For Vlsi Circuits, Abu M. Baker

UNLV Theses, Dissertations, Professional Papers, and Capstones

As CMOS technology continues to scale down, process variation introduces significant uncertainty in power and performance to VLSI circuits and significantly affects their reliability. If this uncertainty is not properly handled, it may become the bottleneck of CMOS technology improvement. As a result, deterministic analysis is no longer conservative and may result in either overestimation or underestimation of the circuit delay. As we know that Static-Timing Analysis (STA) is a deterministic way of computing the delay imposed by the circuits design and layout. It is based on a predetermined set of possible events of process variations, also called corners of …


A Sige Bicmos Lvds Driver For Space-Borne Applications, Matthew Ian Laurence Dec 2013

A Sige Bicmos Lvds Driver For Space-Borne Applications, Matthew Ian Laurence

Masters Theses

When designing an integrated circuit for use during an interstellar mission, certain precautions must be made. The electronics on any off-earth mission will be exposed to wide temperature swings and harmful radiation due to being outside of the Earth’s protective ionosphere. It is crucial that any data path present be immune to these detrimental effects.

The introduction of galactic radiation can not only cause the onboard electronics to fail due to device degradation and single event latchup but can also lead to background radiation being coupled into the signal path as unwanted noise, degrading the signal to noise ratio. Unwanted …


A Novel Design Optimization Of A Fault-Tolerant Ac Permanent Magnet Machine-Drive System, Peng Zhang Oct 2013

A Novel Design Optimization Of A Fault-Tolerant Ac Permanent Magnet Machine-Drive System, Peng Zhang

Dissertations (1934 -)

In this dissertation, fault-tolerant capabilities of permanent magnet (PM) machines were investigated. The 12-slot 10-pole PM machines with V-type and spoke-type PM layouts were selected as candidate topologies for fault-tolerant PM machine design optimization problems. The combination of 12-slot and 10-pole configuration for PM machines requires a fractional-slot concentrated winding (FSCW) layout, which can lead to especially significant PM losses in such machines. Thus, a hybrid method to compute the PM losses was investigated, which combines computationally efficient finite-element analysis (CE-FEA) with a new analytical formulation for PM eddy-current loss computation in sine-wave current regulated synchronous PM machines. These algorithms …


Theoretical Analysis Of Laterally Vibrating Hammerhead Microcantilever Sensors In A Viscous Liquid, Jinjin Zhang Oct 2013

Theoretical Analysis Of Laterally Vibrating Hammerhead Microcantilever Sensors In A Viscous Liquid, Jinjin Zhang

Dissertations (1934 -)

Dynamically driven prismatic microcantilevers excited in the in-plane flexural mode have been investigated and used in liquid-phase sensing applications. However, the performance is restricted due to their limited surface sensing area and higher stiffness in shorter and wider prismatic microcantilevers. To increase the surface sensing area, and further improve sensing characteristics, it has been proposed to investigate symmetric hammerhead microcantilevers vibrating laterally in viscous liquid media. In this work, a theoretical model is proposed and the characteristics of the microcantilevers with symmetric shaped hammerheads (isosceles trapezoid, semi-circle, uniform rectangle and composite rectangle) are investigated. In the analysis, the stem of …


Comprehensive Mapping And Benchmarking Of Esaki Diode Performance, David John Pawlik Aug 2013

Comprehensive Mapping And Benchmarking Of Esaki Diode Performance, David John Pawlik

Theses

The tunneling-FET (TFET) has been identified as a prospective MOSFET replacement technology with the potential to extend geometric and electrostatic scaling of digital integrated circuits. However, experimental demonstrations of the TFET have yet to reliably achieve drive currents necessary to power large scale integrated circuits. Consequentially, much effort has gone into optimizing the band-to-band tunneling (BTBT) efficiency of the TFET. In this work, the Esaki tunnel diode (ETD) is used as a short loop element to map and optimize BTBT performance for a large design space. The experimental results and tools developed for this work may be used to (1) …


Soft-Switching Dc-Dc Converters, Ahmad Mousavi Aug 2013

Soft-Switching Dc-Dc Converters, Ahmad Mousavi

Electronic Thesis and Dissertation Repository

Power electronics converters are implemented with switching devices that turn on and off while power is being converted from one form to another. They operate with high switching frequencies to reduce the size of the converters' inductors, transformers and capacitors. Such high switching frequency operation, however, increases the amount of power that is lost due to switching losses and thus reduces power converter efficiency.

Switching losses are caused by the overlap of switch voltage and switch current during a switching transition. If, however, either the voltage across or the current flowing through a switch is zero during a switching transition, …


Electrical Design Considerations And Packaging Of Power Electronic Modules, Shijie Wang Aug 2013

Electrical Design Considerations And Packaging Of Power Electronic Modules, Shijie Wang

Graduate Theses and Dissertations

A modern power electronic module can save significant energy usage in the power electronic systems by improving their switching efficiencies. One way to improve the efficiency of the power electronic module is to reduce its parasitic circuit elements. The purpose of this thesis is to investigate the mitigation of parasitic circuit elements in power electronic modules. General methods of mitigating parasitic inductances were analyzed by the Q3D Extractor and verified by the time-domain reflectometry (TDR) measurements. In most cases, the TDR measurement results closely matched those predicted by the Q3D Extractor. These methods were applied to design and analyze a …


Design And Fabrication Of Inverter And Rectifier Modules For Indirect Matrix Converter Applications, Saikishore Talakokkula Aug 2013

Design And Fabrication Of Inverter And Rectifier Modules For Indirect Matrix Converter Applications, Saikishore Talakokkula

Graduate Theses and Dissertations

In power converter applications, silicon carbide (SiC) power semiconductor devices are preferred over their silicon counterparts due to many advantages such as wide bandgap, high junction temperatures and low on-state resistance. The SiC devices provide reduced conduction and switching losses. Due to the above mentioned advantages the power conversion efficiency of SiC devices is better compared to that of silicon (Si) devices.

This thesis studies the implementation of 1200V/17A Normally-off SiC JFETs for an indirect matrix converter (IMC) application. A discussion on the parasitic inductance optimization is presented based on the electromagnetic simulation results extracted from the Ansoft Q3D extractor. …


High Voltage Direct Current Energy Transmission Using Modular Multilevel Converters, David Alejandro Guzman Pinzon Aug 2013

High Voltage Direct Current Energy Transmission Using Modular Multilevel Converters, David Alejandro Guzman Pinzon

Graduate Theses and Dissertations

This thesis focus on high voltage direct current (HVdc) energy transmission using modular multilevel converter (MMC) based terminals. It provides a brief comparison between different HVdc technologies, focusing on voltage source converters (HVdc-VSC) with the MMC-based terminal emerging as the topology of choice for ratings less than 1 GW. The controllers for a two-terminal HVdc-link are analyzed and Matlab/SimulinkTM simulation models are presented. The simplified models and full Matlab/SimulinkTM based model are used to select the gains for the MMC controllers. Simulation results carried out on the full model validated the proposed methodologies. A new control technique that …


Automated Channel Assessment For Single Chip Medradio Transceivers, Mark Alexander Hillig Jun 2013

Automated Channel Assessment For Single Chip Medradio Transceivers, Mark Alexander Hillig

Dissertations and Theses

Modern implantable and body worn medical devices leverage wireless telemetry to improve patient experience and expand therapeutic options. Wireless medical devices are subject to a unique set of regulations in which monitoring of the available frequency spectrum is a requirement. To this end, implants use software protocols to assess the in-band activity to determine which channel should be used. These software protocols take valuable processing time and possibly degrade the operational lifetime of the battery. Implantable medical devices often take advantage of a single chip transceiver as the physical layer for wireless communications. Embedding the channel assessment task in the …


Lunalight - Bringing Light To The Expanding World, Gabriela M. Igel, Daniel J. Patrick, Kimberley M. Smith Jun 2013

Lunalight - Bringing Light To The Expanding World, Gabriela M. Igel, Daniel J. Patrick, Kimberley M. Smith

Materials Engineering

The LunaLight, a solar rechargeable light and cell phone charger, addresses the lack of access to electricity faced by 1.4 billion of the world’s population (International Finance Corporation). The LunaTech team has developed a product that is bright, simple, compact, versatile and competitive with existing products. Through a partnership with the non-profit organization One Million Lights, LunaTech has improved a previous team’s design to address user feedback, concerns of durability, and manufacturability.

The LunaLight design includes a 5 component plastic housing held together by 4 screws, a surface mounted PCB, a lithium-ion (Li-Ion) battery, one high-brightness LED, a solar panel, …


Characterization And Modeling Of An O-Band 1310 Nm Sampled-Grating Distributed Bragg Reflector (Sg-Dbr) Laser For Optical Coherence Tomography (Oct) Applications, Desmond Charles Talkington Jun 2013

Characterization And Modeling Of An O-Band 1310 Nm Sampled-Grating Distributed Bragg Reflector (Sg-Dbr) Laser For Optical Coherence Tomography (Oct) Applications, Desmond Charles Talkington

Master's Theses

In this project, the performance aspects of a new early generation 1310 nm Sampled-Grating Distributed Bragg Reflector (SG-DBR) semiconductor laser are investigated. SG-DBR lasers are ideal for Source Swept Optical Coherence Tomography (SS-OCT), a Fourier-Domain based approach for OCT, necessitating a tunable wavelength source. Three internal sections control the frequency output for tuning, along with two amplifiers for amplitude control. These O-band SG-DBR devices are now being produced in research quantities. SG-DBR lasers have been produced at 1550 and 1600 nm for some times. Fundamental questions regarding the performance of the 1310 nm devices must be quantified. Standard metrics including …


Fpga Hardware Accelerators - Case Study On Design Methodologies And Trade-Offs, Matthew V. Ryan Jun 2013

Fpga Hardware Accelerators - Case Study On Design Methodologies And Trade-Offs, Matthew V. Ryan

Theses

Previous research has shown that the performance of any computation is directly related to the architecture on which it is performed. As a result, the performance of compute intensive applications can be improved using heterogeneous systems. These systems consist of various processor architectures such as CPU, FPGA, DSP, and GPU. Individual computations can be performed in parallel on different processor architecrues within the heterogeneous system. Computations are performed by utilizing existing designs from implementation libraries. There is a lack of FPGA accelerators for use in these libraries and as such additional implementations need to be designed.

Different design methodologies for …


Design And Evaluation Of Fpga-Based Hybrid Physically Unclonable Functions, Sasan Khoshroo May 2013

Design And Evaluation Of Fpga-Based Hybrid Physically Unclonable Functions, Sasan Khoshroo

Electronic Thesis and Dissertation Repository

A Physically Unclonable Function (PUF) is a new and promising approach to provide security for physical systems and to address the problems associated with traditional approaches. One of the most important performance metrics of a PUF is the randomness of its generated response, which is presented via uniqueness, uniformity, and bit-aliasing. In this study, we implement three known PUF schemes on an FPGA platform, namely SR Latch PUF, Basic RO PUF, and Anderson PUF. We then perform a thorough statistical analysis on their performance. In addition, we propose the idea of the Hybrid PUF structure in which two (or more) …


Iii-V Bismide Optoelectronic Devices, Dongsheng Fan May 2013

Iii-V Bismide Optoelectronic Devices, Dongsheng Fan

Graduate Theses and Dissertations

This dissertation explores modeling, molecular beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of telecommunication, gas sensing, environment monitoring, etc. In the current room-temperature continuous-wave operational GaSb-based type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is proposed to replace the conventional InGaAsSb material in the quantum well region, which enables the laser diodes achieve up to 4 µm …


Spice Netlist Generation For Electrical Parasitic Modeling Of Multi-Chip Power Module Designs, Peter Tucker May 2013

Spice Netlist Generation For Electrical Parasitic Modeling Of Multi-Chip Power Module Designs, Peter Tucker

Electrical Engineering Undergraduate Honors Theses

Multi-Chip Power Module (MCPM) designs are widely used in the area of power electronics to control multiple power semiconductor devices in a single package. The work described in this thesis is part of a larger ongoing project aimed at designing and implementing a computer aided drafting tool to assist in analysis and optimization of MCPM designs. This thesis work adds to the software tool the ability to export an electrical parasitic model of a power module layout into a SPICE format that can be run through an external SPICE circuit simulator. The code was implemented in python using NetworkX graphs …


Device Characterization And Compact Modeling Of The Sige Hbt In Extreme Temperature Environments, Beth Olivia Woods May 2013

Device Characterization And Compact Modeling Of The Sige Hbt In Extreme Temperature Environments, Beth Olivia Woods

Graduate Theses and Dissertations

The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. Applications at low temperatures with expansive temperature range specifications need an HBT compact model to accurately represent the device's performance.

In this work, a compact model referenced at 300K was developed to …


Novel Test Fixture For Characterizing Microcontacts: Performance And Reliability, Benjamin F. Toler Mar 2013

Novel Test Fixture For Characterizing Microcontacts: Performance And Reliability, Benjamin F. Toler

Theses and Dissertations

Engineers have attempted to improve reliability and lifecycle performance using novel micro-contact metals, unique mechanical designs and packaging. Contact resistance can evolve over the lifetime of the micro-switch by increasing until failure. This work shows the fabrication of micro-contact support structures and test fixture which allow for micro-contact testing, with an emphasis on the fixture's design to allow the determination and analysis of the appropriate failure mode. The other effort of this investigation is the development of a micro-contact test fixture which can measure contact force and resistance directly and perform initial micro-contact characterization, and two forms of lifecycle testing …


Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom Mar 2013

Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and cost-effectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors.

In this thesis, the DC, …


A 40 Ghz Power Amplifier Using A Low Cost High Volume 0.15 Um Optical Lithography Phemt Process, Kenneth W. Mays Jan 2013

A 40 Ghz Power Amplifier Using A Low Cost High Volume 0.15 Um Optical Lithography Phemt Process, Kenneth W. Mays

Dissertations and Theses

The demand for higher frequency applications is largely driven by bandwidth. The evolution of circuits in the microwave and millimeter frequency ranges always demands higher performance and lower cost as the technology and specification requirements evolve. Thus the development of new processes addressing higher frequencies and bandwidth requirements is essential to the growth of any semiconductor company participating in these markets. There exist processes which can perform in the higher frequency design space from a technical perspective. However, a cost effective solution must complement the technical merits for deployment. Thus a new 0.15 um optical lithography pHEMT process was developed …


Copper Indium Diselenide Nanowire Arrays In Alumina Membranes Deposited On Molybdenum And Other Back Contact Substrates, Bhavananda R. Nadimpally Jan 2013

Copper Indium Diselenide Nanowire Arrays In Alumina Membranes Deposited On Molybdenum And Other Back Contact Substrates, Bhavananda R. Nadimpally

Theses and Dissertations--Electrical and Computer Engineering

Heterojunctions of CuInSe2 (CIS) nanowires with cadmium sulfide (CdS) were fabricated demonstrating for the first time, vertically aligned nanowires of CIS in the conventional Mo/CIS/CdS stack. These devices were studied for their material and electrical characteristics to provide a better understanding of the transport phenomena governing the operation of heterojunctions involving CIS nanowires. Removal of several key bottlenecks was crucial in achieving this. For example, it was found that to fabricate alumina membranes on molybdenum substrates, a thin interlayer of tungsten had to be inserted. A qualitative model was proposed to explain the difficulty in fabricating anodized aluminum oxide …


Multi-Mode Self-Referencing Surface Plasmon Resonance Sensors, Jing Guo Jan 2013

Multi-Mode Self-Referencing Surface Plasmon Resonance Sensors, Jing Guo

Theses and Dissertations--Electrical and Computer Engineering

Surface-plasmon-resonance (SPR) sensors are widely used in biological, chemical, medical, and environmental sensing. This dissertation describes the design and development of dual-mode, self-referencing SPR sensors supporting two surface-plasmon modes (long- and short-range) which can differentiate surface binding interactions from bulk index changes at a single sensing location. Dual-mode SPR sensors have been optimized for surface limit of detection (LOD). In a wavelength interrogated optical setup, both surface plasmons are simultaneously excited at the same location and incident angle but at different wavelengths. To improve the sensor performance, a new approach to dual-mode SPR sensing is presented that offers improved differentiation …


Materials Selection And Processing Techniques For Small Spacecraft Solar Cell Arrays, Naseem M. Torabi Jan 2013

Materials Selection And Processing Techniques For Small Spacecraft Solar Cell Arrays, Naseem M. Torabi

Theses and Dissertations--Electrical and Computer Engineering

Body mounted germanium substrate solar cell arrays form the faces of many small satellite designs to provide the primary power source on orbit. High efficiency solar cells are made affordable for university satellite programs as triangular devices trimmed from wafer scale solar cells. The smaller cells allow array designs to pack tightly around antenna mounts and payload instruments, giving the board design flexibility. One objective of this work is to investigate the reliability of solar cells attached to FR-4 printed circuit boards. FR-4 circuit boards have significantly higher thermal expansion coefficients and lower thermal conductivities than germanium. This thermal expansion …


Investigation Of Cds Nanowires And Planar Films For Enhanced Performance As Window Layers In Cds-Cdte Solar Cell Devices, Jianhao Chen Jan 2013

Investigation Of Cds Nanowires And Planar Films For Enhanced Performance As Window Layers In Cds-Cdte Solar Cell Devices, Jianhao Chen

Theses and Dissertations--Electrical and Computer Engineering

Cadmium sulfide (CdS) and cadmium telluride (CdTe) are two leading semiconductor materials used in the fabrication of thin film solar cells of relatively high power conversion efficiency and low manufacturing cost. In this work, CdS/CdTe solar cells with a varying set of processing parameters and device designs were fabricated and characterized for comparative evaluation. Studies were undertaken to elucidate the effects of (i) each step in fabrication and (ii) parameters like thickness, sheet resistance, light absorptivity solution concentration, inert gas pressure etc. Best results were obtained when the thickness of CdS planar film for the window layer was in the …


Study Of N Incorporation In Insb On Gaas By Molecular Beam Epitaxy For Long Wavelength Infrared Devices, Nimai Chand Patra Jan 2013

Study Of N Incorporation In Insb On Gaas By Molecular Beam Epitaxy For Long Wavelength Infrared Devices, Nimai Chand Patra

Dissertations

The distinguishing features of dilute nitride III-V semiconductors lie in the large simultaneous reduction in the band gap and lattice parameter when N is incorporated in small amounts in an otherwise wide band gap III-V material. In particular, N incorporation in InSb is attracting great attention due to its potential applications in the long wavelength infrared (LWIR) applications. However, the relatively small atomic size of N with respect to Sb makes the growth of good quality InSbN layers challenging with effective N incorporation. In this dissertation we present a correlation of the molecular beam epitaxial growth parameters on the type …