Engineering Commons^™

Analyzing Viability Of Blue Indium Gallium Nitride Leds For Use In Space Missions Using A Low Earth Orbit Cubesa, Bertrand Edward Wieliczko

Graduate Theses, Dissertations, and Problem Reports

The payload capacity of spacecraft is constrained by the weight of the craft itself, including fuel and electronic systems. The protective measures used to shield onboard electronics from the harsh space environment, characterized by high-energy particles and significant temperature fluctuations, can further diminish the available payload capacity. This thesis explores the potential of naturally radiation-hard alternatives to commonly used electronic materials, such as Silicon, to reduce the need for shielding and other protective measures, thereby decreasing the weight and cost of space missions.

III-V semiconductor materials, such as Gallium Nitride (GaN), are known for their inherent resilience to temperature swings …

Nano-Patterned Si Structures For Optical Filters And Electro-Mechanical Relays: Fabrication, Characterization, Prospects, And Limitations, Md Ataul Mamun

Theses and Dissertations

Nanofabrication technology, especially nanopatterning, is a rapidly advancing field that has already resulted in creating novel devices and holds promise for producing even more with unmatched performance. These techniques also allow us to gain insight into physical phenomena at the micro- and nanoscale. The ultimate performance of nanofabricated devices and their compatibility with existing Si-based CMOS technology hinge upon the careful selection of materials and precise design, coordinated with meticulous pattern transfer. In this work, we applied nanopatterning techniques on silicon to create optical filters for the shortwave infrared (SWIR) region and nanoelectromechanical system (NEMS) relay-based logic gates. Additionally, these …

Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov

Theses and Dissertations

This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …

Reinventing Integrated Photonic Devices And Circuits For High Performance Communication And Computing Applications, Venkata Sai Praneeth Karempudi

Theses and Dissertations--Electrical and Computer Engineering

The long-standing technological pillars for computing systems evolution, namely Moore's law and Von Neumann architecture, are breaking down under the pressure of meeting the capacity and energy efficiency demands of computing and communication architectures that are designed to process modern data-centric applications related to Artificial Intelligence (AI), Big Data, and Internet-of-Things (IoT). In response, both industry and academia have turned to 'more-than-Moore' technologies for realizing hardware architectures for communication and computing. Fortunately, Silicon Photonics (SiPh) has emerged as one highly promising ‘more-than-Moore’ technology. Recent progress has enabled SiPh-based interconnects to outperform traditional electrical interconnects, offering advantages like high bandwidth density, …

Design, Fabrication And Characterization Of Zero Power Sensor/Harvester For Smart Grid Applications, Zeynel Guler

Mechanical Engineering ETDs

This study presents a flexible sensor/harvester device to be used in both electromagnetic sensing and energy harvesting applications for smart grids. When a current passes through a wire, the sensor detects the magnetic field created by that current. The sensor magnet interacts with the wire magnetic field resulting in a transfer of energy through the piezoelectric cantilever. Piezoelectric, conductive, magnetic, and magnetostrictive composite thin films were prepared to fabricate this device.

Initially, the magnet of the cantilever was optimized considering its shape, thickness, length, taper angle etc. via both simulations and experiments. Peak to peak voltage versus cantilever position graph …

Characterization Of Highly Doped N-Type And P-Type Silicon Carbide Ohmic Contacts, Tanner Rice

Graduate Theses and Dissertations

Silicon Carbide (SiC) is a rather new material that possesses unparalleled properties when compared to Silicon. Due to its larger band gap alongside other thermal properties, SiC can survive in hotter, more radiation intensive environments, whether that be within the crust of the earth or in the reaches of space. As a desirable semiconductor for these applications, CMOS is an especially important device due to its low power consumption. However, creating a good contact between the metal and semiconductor optimally requires two different metals for the n -type and the p-type semiconductor. This greatly increases the processing time, as separate …

Design, Fabrication, And Integration Of Robotic Skin Sensors For Human Robot Interaction., Olalekan Olakitan Olowo

Electronic Theses and Dissertations

Enhancing physical human-robot interaction in modern robotics relies on refining the tactile perception of robot skin sensors. This research focuses on crucial aspects of the development process, including fabrication techniques, miniaturization, and integration for a more efficient collaborative human-robot interface. The fabrication process of robot skin sensors, designed to mimic human skin, is explored both within and outside cleanroom environments. An enhanced technique is presented to increase fabrication yield and create more miniaturized sensor designs with feature sizes in the tens of microns. These sensors function as piezoresistive arrays using organic polymers like PEDOT: PSS as the pressure-sensing medium. Various …

Electrical Characteristics Of In-House Produced Micro/Nanodielectrics, Dewan Mahmudullah

<strong> Theses and Dissertations </strong>

Dielectric characterization is very important across a wide range of applications, including the design and optimization of capacitors, electrical insulation, and electronic devices. It plays a vital role in providing valuable insights for material selection, performance evaluation, and the development of advanced dielectrics. The permittivity of dielectrics is a fundamental property of dielectric materials that quantifies their ability to store and dissipate energy in the presence of an electric field. Studies for developing advanced dielectrics and accurate measurements of the dielectric constant are essential for understanding and optimizing the performance of various electrical and electronic systems. The objective of this …

Investigating Mems Devices In Flow Conditions Relevant To Flow-Through Systems., Mohammad Shafquatul Islam

Electronic Theses and Dissertations

Advancements in microscale actuating technologies has substantially expanded the possibilities of interacting with the surrounding environment. Microstructures that deflect in response to mechanical forces are one of the largest application areas of microelectromechanical systems (MEMS). MEMS devices, functioning as sensors, actuators, and support structures, find applications in inertial sensors, pressure sensors, chemical sensors, and robotics, among others. Driven by the critical role of catalytic membrane reactors, this dissertation aims to evaluate enzyme activity on polymeric membranes and explore how fabrication methods from the field of Electrical and Computer Engineering (ECE) can incorporate sensing and actuation into these porous surfaces. Toward …

Carrier Dynamics In Green Iii-Nitride Leds Using Small-Signal Electroluminescence, Xuefeng Li

Optical Science and Engineering ETDs

Solid-state lighting has achieved significant success over the past two decades, but the low quantum efficiency of green LEDs (i.e., the “green gap”) remains a barrier to full red-green-blue (RGB) displays in numerous applications. Combating efficiency reduction in longer-wavelength LEDs requires understanding the relative roles of intrinsic effects (e.g., wave-function overlap, carrier-current density relationship, phase-space filling (PSF)) vs. extrinsic effects (e.g., material degradation due to increased defect density, compositional inhomogeneities, etc.). A systematic study of the carrier dynamics in InGaN/GaN LEDs is very important for understanding the origin of the green gap and for providing solutions to improve the efficiency …

Electrophertic Deposition And Characterization Of Molybdenum Disulfide On Silicon Substrates, Alex J. Young

LSU Doctoral Dissertations

The electrical characteristics of 2D materials such as high electron mobility and current density are of great interest to various fields from optoelectronics to renewable energy. Researchers have focused their efforts on transition metal dichalcogenides (TMDCs) due to their direct energy band gap. One such TMDC that has garnered much attention is molybdenum disulfide (MoS2). MoS2 has electrical properties comparable to graphene and is a TMDC with characteristics amenable to applications such as solar cells and sensors. Commonly deposited through time-consuming and complex deposition methods such as chemical vapor deposition (CVD), the viability of MoS2 as an electronic material will …

Theoretical Analysis Of Charge Conduction And Rectification In Self-Assembled-Monolayers In Molecular Junctions, Francis Adoah

Electronic Theses and Dissertations, 2020-

As electrical devices shrink to the atomic scale, it is expected that Moore's law will soon be obsolete for semiconductor devices. In 1974, Avriam and Ratner predicted that organic devices could replace semiconductor technology, leading to extensive research on molecular-based organic devices. This dissertation delves into the theoretical frameworks used to examine the transport in molecular junctions and aims to enhance our comprehension of charge transport and conduction properties. The studies presented in this thesis illustrates that a molecule's alteration by just a single atom can change it from an insulator to a conductor, and also that, by fine-tuning the …

Design And Fabrication Of A Trapped Ion Quantum Computing Testbed, Christopher A. Caron

Masters Theses

Here we present the design, assembly and successful ion trapping of a room-temperature ion trap system with a custom designed and fabricated surface electrode ion trap, which allows for rapid prototyping of novel trap designs such that new chips can be installed and reach UHV in under 2 days. The system has demonstrated success at trapping and maintaining both single ions and cold crystals of ions. We achieve this by fabricating our own custom surface Paul traps in the UMass Amherst cleanroom facilities, which are then argon ion milled, diced, mounted and wire bonded to an interposer which is placed …

Investigation Of Vo2 Thin Films And Devices For Opto-Electromechanical Applications, Samee Azad

All Dissertations

Specialized and optimized low pressure direct oxidation technique have been implemented to synthesize high quality VO₂ thin films on various substrates (sapphire, SiO₂/Si, AT-cut quartz, GaN/AlGaN/GaN/Si and muscovite). Structural and surface characterization methods such as X-ray diffraction, Raman spectroscopy and atomic force microscopy have been administered on the grown VO₂ films which indicate their material quality. Transition of characteristics of the VO₂ films are caused by semiconductor metal transition (SMT). This phenomenon is attributed as the change maker in transition of resistivity and transmitted optical power through the VO₂ films. Apart the substrates mentioned, …

Study Of Radiation Effects In Gan-Based Devices, Han Gao

Electrical Engineering Theses and Dissertations

Radiation tolerance of wide-bandgap Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) has been studied, including X-ray-induced TID effects, heavy-ion-induced single event effects, and neutron-induced single event effects. Threshold voltage shift is observed in X-ray irradiation experiments, which recovers over time, indicating no permanent damage formed inside the device. Heavy-ion radiation effects in GaN HEMTs have been studied as a function of bias voltage, ion LET, radiation flux, and total fluence. A statistically significant amount of heavy-ion-induced gate dielectric degradation was observed, which consisted of hard breakdown and soft breakdown. Specific critical injection level experiments were designed and carried out to explore …

Spice Modeling Of Biosensing Field-Effect Transistor, Alex Castro

Electrical Engineering

This project created a user manual on how to generate an easily configurable and implementable Spice model for Field Effect Transistor (FET) devices created in the Cal Poly clean room. The document contained step by step procedures depicting the proper execution techniques and example results for different experiments required to gather the proper information for these models. This testing methodology was shown for finding the numerous different device parameters of a FET, including the I-V curves, threshold voltage, and subthreshold current values. The manual then described how to transfer this data into a new Spice model to allow for simulation …

Characterization Of Low Power Hfo2 Based Switching Devices For In-Memory Computing, Aseel Zeinati

Theses

Oxide based Resistive Random Access Memory (RRAM) devices are investigated as one of the promising non-volatile memories to be used for in-memory computing that will replace the classical von Neumann architecture and reduce the power consumption. These applications required multilevel cell (MLC) characteristics that can be achieved in RRAM devices. One of the methods to achieve this analog switching behavior is by performing an optimized electrical pulse. The RRAM device structure is basically an insulator between two metals as metal-insulator-metal (MIM) structure. Where one of the primary challenges is to assign an RRAM stack with both low power consumption and …

Machine Learning Based Prediction Models For Silicon Heterojunction Solar Cell Optimization, Rahul Jaiswal

Electrical and Computer Engineering ETDs

Silicon heterojunction solar cell of Heterojunction with Thin Intrinsic Layer (HIT) structure is a commercially available technology, and its market share will significantly increase by the next decade. With such a significant market share, any minor improvement in the device’s overall efficiency can be beneficial three folds - customer return on investment, industry revenue, and the overall carbon footprint (from manufacturing to recycling/ disposing of the device). Conventionally, device optimization for solar cells has been achieved using a hit & trial approach where multiple experiments are done to evaluate the best process conditions and device parameters. This approach has some …

Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers

Physics Undergraduate Honors Theses

Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …

Universal Short-Circuit And Open-Circuit Fault Detection For An Inverter, Buck Brown

All Theses

Short-circuit and open-circuit faults of an inverter’s power device often lead to catastrophic failure of the entire system if not detected and acted upon within a few microseconds, particularly for emerging wide bandgap (WGB) power semiconductors. While a significant amount of research has been done on the fast and accurate protection and detection of short-circuit faults, there has been less success corresponding to the research on open-circuit faults. Common downfalls include protection and detection that are too application-specific, take longer than a couple of microseconds, and are not cost-efficient. This study proposes a new open-circuit fault protection and detection system …

Thermal Transport Across 2d/3d Van Der Waals Interfaces, Cameron Foss

Doctoral Dissertations

Designing improved field-effect-transistors (FETs) that are mass-producible and meet the fabrication standards set by legacy silicon CMOS manufacturing is required for pushing the microelectronics industry into further enhanced technological generations. Historically, the downscaling of feature sizes in FETs has enabled improved performance, reduced power consumption, and increased packing density in microelectronics for several decades. However, many are claiming Moore's law no longer applies as the era of silicon CMOS scaling potentially nears its end with designs approaching fundamental atomic-scale limits -- that is, the few- to sub-nanometer range. Ultrathin two-dimensional (2D) materials present a new paradigm of materials science and …

Electrothermal Properties Of 2d Materials In Device Applications, Samantha L. Klein

Masters Theses

To keep downsizing transistors, new materials must be explored since traditional 3D materials begin to experience tunneling and other problematic physical phenomena at small sizes. 2D materials are appealing due to their thinness and bandgap. The relatively weak van der Waals forces between layers in 2D materials allow easy exfoliation and device fabrication but they also result in poor heat transfer to the substrate, which is the main path for heat removal. The impaired thermal coupling is exacerbated in few-layer devices where heat dissipated in the layers further from the substrate encounters additional interlayer thermal resistance before reaching the substrate, …

In-Field Solar Panel Assessment And Fault Diagnosis, Muhammad Elgamal

Theses and Dissertations

Photovoltaic energy is a green energy that suit from small houses to high-power stations spanning large areas. In such large areas, monitoring individual panels can be a tedious task, especially if it was required to identify operational faults of these panels. Photovoltaic 4.0 technology depend on collecting data from each station and feeding them to a central processing system that can analyze operation data and hopefully locate when a fault happens. In such method, it is crucial to be accurate as much as possible and for measuring device to be accurate as well to have a clear judgement. In this …

Design And Fabrication Of A Low Power 7.2 Terabit Transmitter For Exascale Computing, Scott Mcwilliams, Scott Mcwilliams

Electrical Engineering Theses and Dissertations

Enhanced Coupled Strength (ECS) gratings fabricated into III-V based devices offer high reflected power per unit length and broad band reflectivity as compared to conventional 1st order gratings, desired qualities for short-haul high speed transmitters that can be implemented without the need for chip-level temperature control, contributing to the low power per transmitted bit. For commercial DBR lasers, the grating reflectivity results in an extremely narrow reflectivity spectrum, which is highly desired for most/many applications, but requires a power hungry thermo-electric cooler to maintain a fixed frequency. The proposed LEAM (laser electro-absorption modulator) requires a broad reflectivity spectrum, which, by …

Surface Properties, Work Function, And Thermionic Electron Emission Characterization Of Materials For Next-Generation Dispenser Cathodes, Antonio Mantica

Theses and Dissertations--Chemical and Materials Engineering

A dispenser cathode’s ability to thermionically emit electrons is highly dependent on its material properties, especially those of the surface. Understanding the relationship between surface properties and electron emission, therefore, is vital to reach the next generation of the many vacuum electron devices (VEDs) that rely on the physics of electron emission. In the past century, many techniques have been developed to characterize material surfaces and quantify thermionic emission. These techniques are based on a wide range of different physical phenomena, including measuring photoemission via the photoelectric effect, measuring the electrostatic potential between metals in electrical contact, and current collection …

A Phase Change Memory And Dram Based Framework For Energy-Efficient And High-Speed In-Memory Stochastic Computing, Supreeth Mysore

Theses and Dissertations--Electrical and Computer Engineering

Convolutional Neural Networks (CNNs) have proven to be highly effective in various fields related to Artificial Intelligence (AI) and Machine Learning (ML). However, the significant computational and memory requirements of CNNs make their processing highly compute and memory-intensive. In particular, the multiply-accumulate (MAC) operation, which is a fundamental building block of CNNs, requires enormous arithmetic operations. As the input dataset size increases, the traditional processor-centric von-Neumann computing architecture becomes ill-suited for CNN-based applications. This results in exponentially higher latency and energy costs, making the processing of CNNs highly challenging.

To overcome these challenges, researchers have explored the Processing-In Memory (PIM) …

Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula

Dissertations

Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …

Reliability Enhancing Control Algorithms For Two-Stage Grid-Tied Inverters, Yuheng Wu

Graduate Theses and Dissertations

In the photovoltaic (PV) generation system, two types of grid-tied inverter systems are usually deployed: the single-stage grid-tied inverter system and the two-stage grid-tied inverter system. In the single-stage grid-tied inverter system, the input of the inverter is directly connected to the PV arrays, while an additional dc-dc stage is inserted between the PV arrays and the dc-ac inverter in the two-stage design. The additional dc-dc stage could provide a stable dc-link voltage to the inverter, which also enables new design possibilities, including the multi-MPPT operation and solar-plus-storage application. Thus, the two-stage grid-tied inverter has been widely used in the …

Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi

Graduate Theses and Dissertations

This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …

Hybrid Multilevel Converters With Internal Cascaded/Paralleled Structures For Mv Electric Aircraft Applications, Fei Diao

Graduate Theses and Dissertations

Using on-board medium voltage (MV) dc distribution system has been a megatrend for next-generation electric aircraft systems due to its ability to enable a significant system mass reduction. In addition, it makes electric propulsion more feasible using MV power electronic converters. To develop high-performance high-density MV power converters, the emerging silicon carbide (SiC) devices are more attractive than their silicon (Si) counterparts, since the fast switch frequency brought by the SiC can effectively reduce the volume and weight of the filter components and thus increase the converter power density. From the converter topology perspective, with the MV dc distribution, the …