Semiconductor and Optical Materials Commons^™

Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao

Graduate Theses and Dissertations

The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability.

However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs …

Growth Of Indium Nitride Quantum Dots By Molecular Beam Epitaxy, Steven P. Minor

Graduate Theses and Dissertations

Over the last decade, the evolution of the global consciousness in response to decreasing environmental conditions from global warming and pollution has led to an outcry for finding new alternative/clean methods for harvesting energy and determining ways to minimize energy consumption. III-nitride materials are of interest for optoelectronic and electronic device applications such as high efficiency solar cells, solid state lighting (LEDs), and blue laser (Blu-ray Technology) applications. The wide range of direct band gaps covered by its alloys (0.7eV-6.2eV) best illustrates the versatility of III-nitride materials. This wide range has enabled applications extending from the ultraviolet to the near …

Correlated Optical Imaging And Electrochemical Recording For Studying Single Nanoparticle Collisions, Lin-Lin Sun, Wei Wang, Hong-Yuan Chen

Journal of Electrochemistry

With the development of nano-fabrications in recent years, a novel strategy based on random collisions of single electroactive nanoparticles (NPs) onto an inert ultramicroelectrode (UME) has been emerged in the field of nanoelectrochemistry, and named as single nanoparticles collisions (SNCs). The technique uses a chronoamperometric method to detect transient current generated by random collisions of single NPs onto an UME. By analyzing the current signal, one could study the properties of single NPs. Although this technique can detect electrochemical or electrocatalytic currents of a single NP, the traditional SNCs technology lacks necessary spatial resolution to identify and characterize a specific …

Maximizing Poly(3-Butylthiophene-2,5-Diyl) Electrical Conductivity By Maximizing Transcrystal Growth, Edward Alexander Bicknell

Materials Engineering

Polymers are generally considered electrical insulators. Despite this, research in the mid 1970’s found that polymers consisting of a conjugated backbone structure could become electrically conductive upon doping.1 The conjugated polymer analyzed for this project was poly(3-butylthiophene-2,5-diyl) (P3BT). Transcrystals have been found as a way to promote electrical conductivity through mechanisms including π bond atomic orbital overlap and electron mobility.2 In theory, maximizing transcrystal length would also maximize P3BT electrical conductivity, increasing its applicable use in electronic devices. The goal of this project was to determine a methodological way to maximize P3BT electrical conductivity by producing the longest transcrystal length …

Performance Enhancement Of Ssi-Leds And Geometrically Confinement Of Lighting Dots By Using Patterned Wafer Approaches, Shengli Wu, Yiwei Liu, Xiaoning Zhang, Can Yang, Lingguang Liu, Yaogong Wang, Gang Niu

Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7)

Solid state incandescent light emitting devices (SSI-LEDs) were first demonstrated in 2013 by Kuo’s group, which have the metal-oxide-semiconductor structure and emit white light directly¹. The conductive filaments (CFs) through CAFM figures out that Si wafer has a significant impact on the device performance^{2, 3}, multiplayer dielectric layers structure have also been study to enhance the light emission⁴. We demonstrate two approaches to improve the performance of SSI-LEDs by using patterned wafer in this work.

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Ulsi And Tft Technologies In Industry, Research And Higher Education In France: An Evolution Towards Innovation Resulting From Close And Sustainable Interaction, Olivier Bonnaud

Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7)

The semiconductor industry and associated microelectronic production began in France in the early 1980s as part of the national microelectronics plan launched by the French government to meet the needs of new economic sectors that are heavy users of microelectronic products. Indeed, microelectronic circuits, devices and systems are the key elements of the information technology field, which includes computer and communications capabilities, and application fields such as aerospace, transport, and energy, mainly. Several new technologies had to be developed, corresponding to the first advent of communication tools such as Minitel (ancestor of the web) or credit cards, which then underwent …

Conference Program, Yue Kuo, Junichi Murota, Yasuhiro Fukunaka, Yukiharu Uraoka

Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7)

No abstract provided.

Modeling Of Vapor Sorption In Nanoparticle Chemiresistors, Alexandra Oliveira

Honors Scholar Theses

Chemical vapor sensors possess a number of uses in a variety of fields, from environmental and health monitoring to food safety and national security concerns, such as the detection of improvised explosive devices. Many sensors currently in the market have the ability to detect the presence of a select few compounds and measure the concentration at which the species is present. However, these types of sensors require that the vapor to be investigated is known beforehand; they cannot be used for identification except on a case by case basis. In response to this issue, one branch of vapor sensor research …

Algorithmic Multi-Color Cmos Avalanche Photodiodes For Smart-Lighting Applications, Md Mottaleb Hossain

Optical Science and Engineering ETDs

Future smart-lighting systems are expected to deliver adaptively color-tunable and high-quality lighting that is energy efficient while also offering integrated visible-light wireless communication services. To enable these systems at a commercial level, inexpensive and fast sensors with spectral-sensing capability are required. CMOS-compatible silicon avalanche photodiodes (APDs) can be an excellent fit to this problem due to their excellent sensitivity, high speeds and cost effectiveness; however, color sensing is a challenge without resorting to expensive spectral filters, as done in commercially. To address this challenge, we have recently designed and modeled a novel CMOS-compatible dual-junction APD. The device outputs two photocurrents …

Plasmonic Properties Of Nanoparticle And Two Dimensional Material Integrated Structure, Desalegn Tadesse Debu

Graduate Theses and Dissertations

Recently, various groups have demonstrated nano-scale engineering of nanostructures for optical to infrared wavelength plasmonic applications. Most fabrication technique processes, especially those using noble metals, requires an adhesion layer. Previously proposed theoretical work to support experimental measurement often neglect the effect of the adhesion layers. The first finding of this work focuses on the impact of the adhesion layer on nanoparticle plasmonic properties. Gold nanodisks with a titanium adhesion layer are investigated by calculating the scattering, absorption, and extinction cross-section with numerical simulations using a finite difference time domain (FDTD) method. I demonstrate that a gold nanodisk with an adhesive …

Bgaas Alloy Semiconductors For Lasers On Silicon, Joshua Mcarthur

Mechanical Engineering Undergraduate Honors Theses

In the world of semiconductors today, there is a large dissonance between optical devices and electrical application. Due to the limitations of electron transport, photonic integrated circuits are soon-to-be vital in fields like telecommunications and sensing. Right now, these PIC’s are mostly made from indium phosphide. Due to its ubiquitous nature, however, there is a huge push to integrate efficient optics with silicon. It’s cheap, abundant, dope-able, and our electronic infrastructure is based on it. The reason why silicon photonics aren’t already commercialized is because of silicon’s indirect bandgap—it is inefficient with optical applications. The problem with combining direct gap …

(111)-Oriented Gallium Arsenide Tensile-Strained Quantum Dots Tailored For Entangled Photon Emission, Christopher Schuck

Boise State University Theses and Dissertations

The use of molecular beam epitaxy (MBE) to create quantum dots (QDs) embedded in solid-state semiconductor media has been at the forefront of novel and record-breaking optoelectronic device development for many years. However, the wide range of semiconductor fabrication capabilities and the non-equilibrium growth parameters inherent to MBE mean that there are still many QD research frontiers that are yet to be explored.

This work focuses on a recently discovered method that permits, for the first time, the growth of QDs under tensile strain on non-(100) surfaces. My research explores the first (and currently only) optically active materials system for …

Research Of Electro-Optical Effect In Metal Halide Perovskites By Fabry-Perot Interometer Method, Hanxiang Yin

McKelvey School of Engineering Graduate Student Theses & Dissertations

Perovskites have been investigated a lot by present and reported with outstanding optoelectronic properties. However, so far there is no publications about another important property, the electro-optical (EO) effect which is related to important applications in photolithography. This thesis is mainly mean to calculate the EO constants of one kind of organic perovskite material, CH₃NH₃PbI₃, which has been reported to have good capability of forming film by spin-coating, through the way of putting the film of CH₃NH₃PbI₃ between two layers of metal mirrors to build a Fabry-Perot interferometer and …

A Silicon Germanium Cmos Linear Voltage Regulator For Wireless Agricultural Applications, Aminta Naidili Castillo Robles

Graduate Theses and Dissertations

This thesis presents the design, simulation and test results of a silicon germanium (SiGe) complementary metal-oxide-semiconductor (CMOS) linear regulator. The objective of the circuit is to power other analog devices regardless of the load current and input voltage changes. The application of this regulator is to be part of a project developing a miniaturized semiconductor platform that can be inserted into stems of crops in order to measure data inside the plant and then send it wirelessly to the user. The linear regulator was designed on a BiCMOS SiGe 0.13µm which is a GlobalFoundries process. It has been tested at …

Optical Enhancement In Periodic Plasmonic Gratings For Sers And Metal-Semiconductor-Metal Photodetectors (Msm-Pds) Applications, Ahmad Aziz Darweesh

Graduate Theses and Dissertations

This dissertation is aimed to numerically study the effect of plasmonic grating electrodes on the efficiency of metal-semiconductor-metal photodetectors (MSM PDs) and the sensitivity of Surface Enhanced Raman Spectroscopy (SERS). This research can benefit many areas of nanoscience and optics, including plasmonic applications, such as, super lenses, nano-scale optical circuits, optical filters, surface plasmon enhanced photo-detectors solar cells, imaging sensors, charge-coupled devices (CCD), and optical-fiber communication systems. Several parameters, wire widths and thickness, gap space, taper angle, and the incident wavelength and angle, were investigated. The goal of this research is to utilize the plasmonic phenomenon by using plasmonic gratings …

Sensitive Photoelectrochemical Assay Of Nucleic Acids Based On Catalytic Hairpin Assembly And Ru(Nh3)63+, Ya-Min Fu, Xiao-Xia Yan, Xiao-Hua Zhang, Jin-Hua Chen

Journal of Electrochemistry

A simple “signal-on” photoelectrochemical (PEC) sensing platform for sensitive assay of nucleic acids was developed by coupling catalytic hairpin assembly (CHA) signal amplification strategy with Ru(NH₃)₆³⁺. Herein, cadmium sulfide (CdS) was deposited on the TiO₂/indium tin oxide (ITO) electrode by a method of successive ionic layer adsorption and reaction (SILAR), serving as one kind of photoelectric material to broaden absorption range of TiO₂ and to improve the photoelectric conversion efficiency. Thereafter, the capture DNA (C-DNA) was immobilized on the CdS/TiO₂/ITO electrode. Simultaneously, Au-hairpin DNA probe 1 (Au-HP1) and hairpin DNA …

Plasmonic Metamaterials: Physical Background And Some Technological Applications, Benjamin G. Schmidt

Senior Honors Theses

New technological frontiers appear every year, and few are as intriguing as the field of plasmonic metamaterials (PMMs). These uniquely designed materials use coherent electron oscillations to accomplish an astonishing array of tasks, and they present diverse opportunities in many scientific fields.

This paper consists of an explanation of the scientific background of PMMs and some technological applications of these fascinating materials. The physics section addresses the foundational concepts necessary to understand the operation of PMMs, while the technology section addresses various applications, like precise biological and chemical sensors, cloaking devices for several frequency ranges, nanoscale photovoltaics, experimental optical computing …

Characterization Of Metal Contacts On Hydrothermally Synthesized Uranium Dioxide For Novel Semiconductor Applications, Tory E. Robinson

Theses and Dissertations

This research is focused on determining which metals or combinations of metals form effective electrical contacts on hydrothermally synthesized UO2 substrates to allow for additional work in characterization of the material as well as the feasibility of its use in semiconductor devices such as solid-state neutron detectors. A methodology was established for selection of candidate metals. Target mixtures composed of Au, Ag, Pt, and Mg were chosen along with several single-metals. Thin metal films were deposited onto tungsten probe tips and hydrothermally synthesized UO2 samples to allow for analysis of mechanical and deposited contact to the substrates through I-V measurements.

3-D Multifunctional Sensors Fabricated On Fiber Tips Using A Two-Photon Polymerization Process, Jonathan W. Smith

Theses and Dissertations

This thesis conducts research involving designing, fabricating, and testing optical fiber tip refractive index sensors. The fabrication process used for these sensors is a two-photon polymerization process utilizing a photo sensitive polymer. Unlike planar lithography, this fabrication process allows the creation of arbitrary shapes with a great degree of freedom. Three different fiber tip sensors were fabricated and tested. The first is a flat surfaced single cavity Fabry-Pérot interferometer (FPI) device, the second is a flat surfaced double cavity FPI device, and the final is a confocal surfaced double cavity FPI device. These sensors are tested for thermal radiation and …

Coupling Of Light's Orbital Angular Momentum To A Quantum Dot Ensemble, Alaa A. Bahamran

Electronic Theses and Dissertations

We theoretically and experimentally investigate the transfer of orbital angular momentum from light to an ensemble of semiconductor-based nanostructures composed of lead sulfide quantum dots. Using an ensemble of quantum dots offers a higher cross-section and more absorption of twisted light fields compared to experimentally challenging single-nanostructure measurements. However, each quantum dot (except for on-center) sees a displaced light beam parallel to its own axis of symmetry. The transition matrix elements for the light-matter interaction are calculated by expressing the displaced light beam in terms of the appropriate light field centered on the nanoparticles. The resulting transition rate induced by …