Semiconductor and Optical Materials Commons^™

A Hybrid Electronic Nose System Based On Metal Oxide Semiconductor Gas Sensors And Compact Paper-Pased Colorimteric Sensors For Volatile Organic Compounds Classification, Aung Khant Maw

Chulalongkorn University Theses and Dissertations (Chula ETD)

Commercial metal oxide semiconductor (MOS) sensors usually employed in electronic noses (e-noses) are well known for being low-cost, portability, and ease of use. However, these sensors can only identify a limited number of odors due to insufficient selectivity. Recent studies improved the selectivity by jointly integrating the MOS sensors with additional sensor sources. However, the published hybrid systems involved complex fabrication and measurement procedures. On the contrary, this work utilizes paper-based colorimetric sensors which are simpler and easier to use. This proposed hybrid system consists of 8 commercial metal oxide sensors and a paper-based colorimetric sensor coated with phenol red, …

Generation Of Warm Dense Plasma On Solar Panel Infrastructure In Exo-Atmospheric Conditions, Harrison C. Wenzel

Theses and Dissertations

The use of a weaponized thermo-nuclear device in exo-atmospheric conditions would be of great impact on the material integrity of orbiting satellite infrastructure. Particular damage would occur to the multi-layered, solar cell components of such satellites. The rapid absorption of X-ray radiation originating from a nuclear blast into these layers occurs over a picosecond time scale and leads to the generation of Warm Dense Plasma (WDP). While incredibly difficult and costly to replicate in a laboratory setting, a collection of computational techniques and software libraries may be utilized to simulate the intricate atomic and subatomic physics characteristics of such an …

Structure, Morphology And Composition-Property Elucidation Of Ni–Mo And Ni−Mo−P Nanocrystals For Water Splitting Reactions And Group Iv Alloy And Silicate Nanocrystals For Visible To Near Ir Optoelectronics, Ebtesam Hassan Abuelenein Eladgham

Theses and Dissertations

Abstract

Structure, Morphology and Composition-Property Elucidation of Ni–Mo and Ni−Mo−P Nanocrystals for Water Splitting Reactions and Group IV Alloy and Silicate Nanocrystals for Visible to Near IR Optoelectronics

by

Ebtesam Hassan Abuelenein Eladgham

A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy at Virginia Commonwealth University.

Advisor: Indika U Arachchige

Associate Professor, Department of Chemistry

Nanomaterials have gained a great attention because of their unique physical properties with size intermediate between molecular materials and extended solids. They have a large surface to volume ratio and display size tunable physical properties that was not …

Modulation Of Semiconductor Photoconversion With Surface Modification And Plasmon, Joeseph Martin Bright

Graduate Theses, Dissertations, and Problem Reports (ETD)

Semiconductor devices are the basis of modern technology. Semiconductor-based photoconversion devices that convert light into electrical signals have shown potential for light energy harvesting and conversion, environmental remediation, and sensors for detection of light, chemicals, and biological substances. Despite this potential for use in many applications, semiconductor photoconversion devices need further improvement in the photoconversion performance. This photoconversion improvement may be manifested as increased photoconversion efficiencies for light harvesting devices for power generation such as photovoltaics and photoelectrochemical (PEC) cells or improved photoconversion modulation to increase the sensitivity of semiconductor photoconversion-based sensors. In addition, alternative semiconductor materials to semiconductors that …

Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves

Graduate Theses, Dissertations, and Problem Reports (ETD)

Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …

Cuo/Cu Core/Shell Nanostructured Photoconductive Devices By Hwt And Hips, Khalidah Hussein Habeeb Al-Mayalee

Theses and Dissertations

Over recent years, great efforts are being dedicated to developing low cost and high-efficiency nanostructured design for optoelectronic applications. Nanostructured semiconductor materials have demonstrated superior performance as compared to bulk materials. Core/shell nanostructured geometries have received a great deal of attention not only in the area of synthesis and characterization but also in their potential applications. These structures have been used in abundance in various areas such as electronics, sensors, catalysis, biomedical, and optical devices. Well-controlled core/shell nanostructured geometries can offer a significant improvement in the devices' performance. Therefore, the fabrication of complex 3D core/shell architectures with controlled morphology, homogeneous …

Studies Of Initial Growth Of Gan On Inn, Alaa Alnami

Graduate Theses and Dissertations

III-nitride materials have recently attracted much attention for applications in both the microelectronics and optoelectronics. For optoelectronic devices, III-nitride materials with tunable energy band gaps can be used as the active region of devices to enhance the absorption or emission. A such material is indium nitride (InN), which along with gallium nitride (GaN) and aluminum nitride (AlN) embody the very real promise of forming the basis of a broad spectrum, a high efficiency solar cell. One of the remaining complications in incorporating InN into a solar cell design is the effects of the high temperature growth of the GaN crystal …

Deep Donors And Acceptors In Β-Ga2O3 Crystals: Determination Of The Fe2+/3+ Level By A Noncontact Method, Christopher A. Lenyk, Timothy D. Gustafson, Larry E. Halliburton, Nancy C. Giles

Faculty Publications

Electron paramagnetic resonance (EPR), infrared absorption, and thermoluminescence (TL) are used to determine the Fe^2+/3+ level in Fe-doped β-Ga₂O₃ crystals. With these noncontact spectroscopy methods, a value of 0.84 ± 0.05 eV below the conduction band is obtained for this level. Our results clearly establish that the E2 level observed in deep level transient spectroscopy (DLTS) experiments is due to the thermal release of electrons from Fe²⁺ ions. The crystals used in this investigation were grown by the Czochralski method and contained large concentrations of Fe acceptors and Ir donors, and trace amounts of Cr …

Progress In Solar Photocatalytic Hydrogen Production, Zhi Wu, Lan Sun, Chang-Jian Lin

Journal of Electrochemistry

With the rapid development of human society and dramatically consumption of traditional energy, energy shortage and environmental pollution have become an important factor restricting the sustainable development of human society. At present, the development of clean and environmentally friendly renewable energy system has drawn much attention and becomes an important priority stratagem in the world. In many green and sustainable new energy projects, semiconductor-based photocatalytic hydrogen production technology which utilizes the available clean and renewable solar energy to prepare clean hydrogen energy is excepted to solve the crisis of energy shortage and environmental pollution, has become one of the most …

Nonlinear Characterizing Of A New Titanium Nitride On Aluminum Oxide Metalens, Michael A. Cumming

Theses and Dissertations

A sample metalens generated from Titanium Nitride deposited onto Aluminum Oxide was designed to focus at 10 microns with a beam centered at 800nm, and when analyzed with high intensity illumination was found to have a focal length of 9.650 ±.003µm at an intensity of 16.93[MW/cm² ]. Analyzing this change by comparing it to a Fresnel Lens’ physics shows that for this lens, the effective nonlinear index of refraction is certainly greater than the nonlinear index of just Titanium Nitride itself, at −1.6239 × 10⁻¹⁵[m²/W] compared to the materials −1.3 × 10⁻¹⁵[m^{2 …}

Nonlinearities And Carrier Dynamics In Refractory Plasmonic Tin Thin Films, Heather George, Jennifer Reed, Manuel R. Ferdinandus, Clayton Devault, Alexei Lagutchev, Augustine Urbas, Theodore B. Norris, Vladimir M. Shalaev, Alexandra Boltasseva, Nathaniel Kinsey

Faculty Publications

Titanium nitride is widely used in plasmonic applications, due to its robustness and optical properties which resemble those of gold. Despite this interest, the nonlinear properties have only recently begun to be investigated. In this work, beam deflection and non-degenerate femtosecond pump-probe spectroscopy (800 nm pump and 650 nm probe) were used to measure the real and imaginary transient nonlinear response of 30-nm-thick TiN films on sapphire and fused silica in the metallic region governed by Fermi-smearing nonlinearities. In contrast to other metals, it is found that TiN exhibits non-instantaneous positive refraction and reverse saturable absorption whose relaxation is dominated …

Triple-Junction Solar Cells : In Parallel., Levi C Mays

Electronic Theses and Dissertations

This paper looks into the current inefficiency of solar cells and attempts a few alternative solar cell structures in order to provide a more effective source of renewable energy. Currently, multi-junction solar cells are being developed to capture the sun’s light more efficiently. One of the ideas in this paper is to add a window to see if the addition of such a layer into a junction will increase the voltage while maintaining nearly the same current output. Central to this paper is the rearranging of the conducting layers of the multi-junction cell so that the junctions can be connected …

Structure And Properties Of Zno-Zns Heterostructures, Sanchali Das

Graduate Theses/Dissertations

Heterostructures consisting of at least two layers of dissimilar materials have always been well studied due to potential applications in nano-electronic and optoelectronic devices. In this study, I have investigated the structural and physical properties of zinc oxide -zinc sulfide (ZnO-ZnS) based heterostructures of thin films and core-shell nanoparticles. Pulsed laser deposition technique was employed to grow ZnO thin film on sapphire substrate. ZnO-ZnS heterostructures were obtained using hydrothermal synthesis where thiourea has served as a precursor solution for the source of sulfur. X-ray diffraction analysis on the parent and the sulfidized samples gives the information about the crystallinity and …

Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao

Graduate Theses and Dissertations

The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability.

However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs …

Growth Of Indium Nitride Quantum Dots By Molecular Beam Epitaxy, Steven P. Minor

Graduate Theses and Dissertations

Over the last decade, the evolution of the global consciousness in response to decreasing environmental conditions from global warming and pollution has led to an outcry for finding new alternative/clean methods for harvesting energy and determining ways to minimize energy consumption. III-nitride materials are of interest for optoelectronic and electronic device applications such as high efficiency solar cells, solid state lighting (LEDs), and blue laser (Blu-ray Technology) applications. The wide range of direct band gaps covered by its alloys (0.7eV-6.2eV) best illustrates the versatility of III-nitride materials. This wide range has enabled applications extending from the ultraviolet to the near …

Correlated Optical Imaging And Electrochemical Recording For Studying Single Nanoparticle Collisions, Lin-Lin Sun, Wei Wang, Hong-Yuan Chen

Journal of Electrochemistry

With the development of nano-fabrications in recent years, a novel strategy based on random collisions of single electroactive nanoparticles (NPs) onto an inert ultramicroelectrode (UME) has been emerged in the field of nanoelectrochemistry, and named as single nanoparticles collisions (SNCs). The technique uses a chronoamperometric method to detect transient current generated by random collisions of single NPs onto an UME. By analyzing the current signal, one could study the properties of single NPs. Although this technique can detect electrochemical or electrocatalytic currents of a single NP, the traditional SNCs technology lacks necessary spatial resolution to identify and characterize a specific …

Maximizing Poly(3-Butylthiophene-2,5-Diyl) Electrical Conductivity By Maximizing Transcrystal Growth, Edward Alexander Bicknell

Materials Engineering

Polymers are generally considered electrical insulators. Despite this, research in the mid 1970’s found that polymers consisting of a conjugated backbone structure could become electrically conductive upon doping.1 The conjugated polymer analyzed for this project was poly(3-butylthiophene-2,5-diyl) (P3BT). Transcrystals have been found as a way to promote electrical conductivity through mechanisms including π bond atomic orbital overlap and electron mobility.2 In theory, maximizing transcrystal length would also maximize P3BT electrical conductivity, increasing its applicable use in electronic devices. The goal of this project was to determine a methodological way to maximize P3BT electrical conductivity by producing the longest transcrystal length …

Performance Enhancement Of Ssi-Leds And Geometrically Confinement Of Lighting Dots By Using Patterned Wafer Approaches, Shengli Wu, Yiwei Liu, Xiaoning Zhang, Can Yang, Lingguang Liu, Yaogong Wang, Gang Niu

Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7)

Solid state incandescent light emitting devices (SSI-LEDs) were first demonstrated in 2013 by Kuo’s group, which have the metal-oxide-semiconductor structure and emit white light directly¹. The conductive filaments (CFs) through CAFM figures out that Si wafer has a significant impact on the device performance^{2, 3}, multiplayer dielectric layers structure have also been study to enhance the light emission⁴. We demonstrate two approaches to improve the performance of SSI-LEDs by using patterned wafer in this work.

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Ulsi And Tft Technologies In Industry, Research And Higher Education In France: An Evolution Towards Innovation Resulting From Close And Sustainable Interaction, Olivier Bonnaud

Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7)

The semiconductor industry and associated microelectronic production began in France in the early 1980s as part of the national microelectronics plan launched by the French government to meet the needs of new economic sectors that are heavy users of microelectronic products. Indeed, microelectronic circuits, devices and systems are the key elements of the information technology field, which includes computer and communications capabilities, and application fields such as aerospace, transport, and energy, mainly. Several new technologies had to be developed, corresponding to the first advent of communication tools such as Minitel (ancestor of the web) or credit cards, which then underwent …

Conference Program, Yue Kuo, Junichi Murota, Yasuhiro Fukunaka, Yukiharu Uraoka

Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7)

No abstract provided.