Semiconductor and Optical Materials Commons^™

Photoluminescence From Gan Co-Doped With C And Si, Mykhailo Vorobiov

Theses and Dissertations

This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relatively) bands in Gallium Nitride samples doped with C and Si. The band BL_C was at first observed in the steady-state photoluminescence spectrum under high excitation intensities and discerned from BL1 and BL2 bands appearing in the same region of the spectrum. Using the time-resolved photoluminescence spectrum, we were able to determine the shape of the BL_C and its position at 2.87 eV. Internal quantum efficiency of the YL band was estimated to be 90\%. The hole capture coefficient of the BL_{C …}

The Physical Behavior And Characterization Of Nanoporous Silicon And Dispenser Cathode Surfaces, Tyler Lucius Corey Maxwell

Theses and Dissertations--Chemical and Materials Engineering

Nanostructured materials have received a surge of interest in recent years since it has become apparent that reducing the size of a material often leads to heightened mechanical behavior. From a fundamental standpoint, this stems from the confinement of dislocations. Applications in microelectromechanical devices, lithium ion batteries, gas sensing and catalysis are realized by combining the improvements in mechanical behavior from material size reduction with the heightened chemical activity offered by materials with a high surface-area-to-volume ratio. In this study, films of nanoporous Si-Mg were produced through magnetron sputtering, followed by dealloying using an environmentally benign process with distilled water. …

Morphological And Energetic Effects On Charge Transport In Conjugated Polymers And Polymer-Nanowire Composites, Zhiming Liang

Theses and Dissertations--Chemistry

Organic semiconductors have wide applications in organic-based light-emitting diodes, field-effect transistors, and thermoelectrics due to the easily modified electrical and optical properties, excellent mechanical flexibility, and solution processability. To fabricate high performance devices, it is important to understand charge transport mechanisms, which are mainly affected by material energetics and material morphology. Currently it is difficult to control the charge transport properties of new organic semiconductors and organic-inorganic nanocomposites due to our incomplete understanding of the large number of influential variables. Molecular doping of π-conjugated polymers and surface modification of nanowires are two means through which charge transport can be manipulated. …

Structural, Transport, And Topological Properties Induced At Complex-Oxide Hetero-Interfaces, Justin K. Thompson

Theses and Dissertations--Physics and Astronomy

Complex-oxides have seen an enormous amount of attention in the realm of Condensed Matter Physics and Materials Science/Engineering over the last several decades. Their ability to host a wide variety of novel physical properties has even caused them to be exploited commercially as dielectric, metallic and magnetic materials. Indeed, since the discovery of high temperature superconductivity in the “Cuprates” in the late 1980’s there has been an explosion of activity involving complex-oxides. Further, as the experimental techniques and equipment for fabricating thin films and heterostructures of these materials has improved over the last several decades, the search for new and …

Nonlinear Coupled Effects In Nanomaterials, Sia Bhowmick

Theses and Dissertations (Comprehensive)

Materials at the nanoscale have different chemical, structural, and optoelectrical properties compared to their bulk counterparts. As a result, such materials, called nanomaterials, exhibit observable differences in certain physical phenomena. One such resulting phenomenon called the piezoelectric effect has played a crucial role in miniature self-powering electronic devices called nanogenerators which are fabricated by using nanostructures, such as nanowires, nanorods, and nanofilms. These devices are capable of harvesting electrical energy by inducing mechanical strain on the individual nanostructures. Electrical energy created in this manner does not have environmental limitations. In this thesis, important coupled effects, such as the nonlinear piezoelectric …

Block Copolymer Nanostructures For Inorganic Oxide Nanopatterning, Krishna Pandey

Graduate Theses/Dissertations

Self-assembled nature of block copolymer (BCP) makes them ideal for emerging technologies in nanometer scale. The micro phase separation between two or more dissimilar polymer blocks of BCP leads to uniform periodic nanostructures of different domains of dimension in the range of 5-100 nm, good for the development of emerging microelectronic and optoelectronics devices. Molecular weight and chain architecture of each blocks govern the morphology evolution; gives different structure like spherical, micelles, lamellae, cylindrical, gyroid etc. The morphology evolution of BCP nanostructure also depends on different external factors as well. In the first work of this thesis, three external factors …

Structural And Elastic Properties Of Degenerate Sno Monolayers At Finite Temperature, Afsana Sharmin

Graduate Theses and Dissertations

Chalcogen-based layered superconductors with a litharge structure such as FeS and FeSe mono-layers undergo structural and superconducting phase transitions that are tunable by doping. Representing another material platform with a litharge structure but without valence d-electrons, SnO monolayers also display a structural ground state with a degenerate rectangular unit cell at zero temperature and a charge-tunable energy barrier that leads to a thermally-controllable structural phase change. Doped SnO monolayers with rectangular degenerate unit cells give rise to two-dimensional multiferroicity. Their two-dimensional elastic energy landscape adopts a basic analytic expression that is employed to discuss this structural transition. The results contained …

Generalized Ellipsometry On Complex Nanostructures And Low-Symmetry Materials, Alyssa Mock

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, complex anisotropic materials are investigated and characterized by generalized ellipsometry. In recent years, anisotropic materials have gained considerable interest for novel applications in electronic and optoelectronic devices, mostly due to unique properties that originate from reduced crystal symmetry. Examples include white solid-state lighting devices which have become ubiquitous just recently, and the emergence of high-power, high-voltage electronic transistors and switches in all-electric vehicles. The incorporation of single crystalline material with low crystal symmetry into novel device structures requires reconsideration of existing optical characterization approaches. Here, the generalized ellipsometry concept is extended to include applications for materials with …

Artificial Olfactory System For Multi-Component Analysis Of Gas Mixtures., Alexander Aleksandrovich Larin

Electronic Theses and Dissertations

Gas analysis is an important part of our world and gas sensing technology is becoming more essential for various aspects of our life. A novel approach for gas mixture analysis by using portable gas chromatography in combination with an array of highly integrated and selective metal oxide (MOX) sensors has been studied. We developed a system with small size (7 x 13 x 16 inches), low power consumption (~10 W) and absence of special carrier gases designed for portable field analysis (assuming apriori calibration). Low ppb and even sub-ppb level of detection for some VOCs was achieved during the analysis …

Modeling And Simulation Of Iii-Nitride-Based Solar Cells Using Nextnano®, Malak Refaei

Graduate Theses and Dissertations

Nextnano³ software is a well-known package for simulating semiconductor band-structures at the nanoscale and predicting the general electronic structure. In this work, it is further demonstrated as a viable tool for the simulation of III-nitride solar cells. In order to prove this feasibility, the generally accepted solar cell simulation package, PC1D, was chosen for comparison. To critique the results from both PC1D and Nextnano3, the fundamental drift-diffusion equations were used to calculate the performance of a simple p-n homojunction solar cell device analytically. Silicon was picked as the material for this comparison between the outputs of the two simulators as …

Integration Of Thin Film Tpv Cells To Cvd Diamond Heat Spreaders, Emma J. Renteria

Electrical and Computer Engineering ETDs

In this work, techniques to isolate thermophotovoltaic (TPV) devices from the growth substrate and their subsequent integration with Chemical Vapor Deposition (CVD) diamond heat spreaders will be discussed, with the envisioned goal of fabricating thermally managed cells. CVD diamond heat spreaders are a great option for thermal management of TPV cells. The key requirement, however, is the bonding of the TPV cell directly onto the diamond wafer without the presence of thick (>350 μm) growth substrates, which can offer significant thermal resistance.

The first approach is to release GaSb epitaxial layers from GaSb substrates. However, this is challenging due …

Superconductivity At Т≈200 K In Bismuth Cuprates Synthesized Using Solar Energy, J. Chigvinadze, Juana Acrivos, S. Ashimov, D. Gulamova, G. Donadze

Faculty Publications, Chemistry

When investigating low-frequency (0.1 Hz) oscillations of multiphase high-temperature cuprate superconductors (HTCS) Bi1,7Pb0,3Sr2Ca(n-1)CunOy (n=2-30), a wide attenuation peak (ΔT~100 К) with a maximum at Т≈200 К was detected. This peak was particularly pronounced in field cooling (FC) experiments, i.e. after abrupt cooling of the sample in the external magnetic field at the temperature Т<Тс with subsequent slow warming up to room temperature with invariance of the applied field. The attenuation peak height depended on the preliminaryorientation (before cooling) of the samples θ in the measured permanent magnetic field Н. On the one hand, it is well known that, after the FC procedure and subsequent slow warming up, at the temperatures close to the critical temperature Тс, the attenuation peak associated with “melting” of the Abrikosov frozen vortex structure and its disappearance at Т >Тс is detected in monophase samples. At the same time, in most multiphase bismuth HTCS samples, synthesized using solar energy and superfast quenching of the melt, the attenuation peak with the maximum at Т≈200 К was observed.Depending on the conditions of synthesis, the attenuation peak could …

Cu2znsn(S1-Xsex)4 Solar Cell Fabrication And Characterization, Weiwei Sun

Theses and Dissertations

Cu2ZnSn(S1-xSex)4 (CZTSSe) is a kesterite material with similar properties to CuInxGa1-xS2 (CIGS) but less expensive element contained. A significant progress has been made in terms of CZTSSe in solar cell applications. Despite its energy conversion efficiency of 12.6% has been achieved by IBM using solution processes, further research and understanding of the materials is still needed in order to improve the solar cell performance of CZTSSe. In this study, we use a facile chemical route to fabricating CZTSSe thin-film solar cells by spin-coating followed by selenization process. An environmentally friendly non-toxic solution of highly soluble, inexpensive, and commercially available precursors …

Use Of A Novel Infrared Wavelength-Tunable Laser Mueller-Matrix Polarimetric Scatterometer To Measure Nanostructured Optical Materials, Jason C. Vap, Stephen E. Nauyoks, Michael R. Benson, Michael A. Marciniak

Faculty Publications

Nanostructured optical materials, for example, metamaterials, have unique spectral, directional, and polarimetric properties. Samples designed and fabricated for infrared (IR) wavelengths have been characterized using broadband instruments to measure specular polarimetric transmittance or reflectance as in ellipsometry or integrated hemisphere transmittance or reflectance. We have developed a wavelength-tunable IR Mueller-matrix (Mm) polarimetric scatterometer which uses tunable external-cavity quantum-cascade lasers (EC-QCLs) to tune onto and off of the narrowband spectral resonances of nanostructured optical materials and performed full polarimeteric and directional evaluation to more fully characterize their behavior. Using a series of EC-QCLs, the instrument is tunable over 4.37-6.54 μm wavelengths …

Nanowire-Based Light-Emitting Diodes: A New Path Towards High-Speed Visible Light Communication, Mohsen Nami

Physics & Astronomy ETDs

Nano-scale optoelectronic devices have gained significant attention in recent years. Among these devices are semiconductor nanowires, whose dimeters range from 100 to 200 nm. Semiconductor nanowires can be utilized in many different applications including light-emitting diodes and laser diodes. Higher surface to volume ratio makes nanowire-based structures potential candidates for the next generation of photodetectors, sensors, and solar cells. Core-shell light-emitting diodes based on selective-area growth of gallium nitride (GaN) nanowires provide a wide range of advantages. Among these advantages are access to non-polar m-plane sidewalls, higher active region area compared to conventional planar structures, and reduction of threading …

Single-Step, Atmospheric Pressure Chemical Vapor Deposition Of Methylammonium Bismuth Iodide Thin Films, Xiao Chen

McKelvey School of Engineering Graduate Student Theses & Dissertations

Lead halide perovskites (CH₃NH₃PbI₃ and its variants) are promising solar cell absorber materials. Though the reported power conversion efficiencies of lead halide perovskite solar cells (up to 21%) are competitive with commercial silicon solar cells, lead toxicity in these perovskites present a challenge to further scale-up and eventual commercialization. Recently, bismuth (Bi³⁺) based organic halide perovskite has drawn attention as a substitution for lead-free perovskites, since it is a non-toxic 6p-block element, isoelectronic with Pb²⁺. Methylammonium bismuth iodide ((CH₃NH₃)₃Bi₂I₉) is reported …

Atomistic Simulations Of Novel Nanoscale Semiconductor Devices: Resistance Switches And Two-Dimensional Transistors, Joseph P. Anderson, Mahbubul Islam, David Guzman, Alejandro Strachan

The Summer Undergraduate Research Fellowship (SURF) Symposium

As transistors get smaller, we are achieving record levels of memory density. However, there is a limit to how small transistors can be made before their functionality breaks down. Thus alternatives to traditional transistor technology are needed. The two such technologies we examined are: resistance switching devices, which reversibly grow metal filaments through a dielectric, and two-dimensional transistors, which are capable of breaking through the scalability limit of traditional transistors. In order to design resistance switching devices which create filaments with some level of consistency, the dynamics of the filament formation need to be explored. Herein we model this process …

Improving Methods Of Doping On Black Phosphorus, Yuqin Duan, Adam Charnas, Jingkai Qin, Peide Ye

The Summer Undergraduate Research Fellowship (SURF) Symposium

Black phosphorus (BP) is a 2D semiconducting material with high carrier mobility. It is usually p-type due to oxidation states near its valence band. Although achieved through other growth methods, n-type doping has not yet been accomplished through the modern chemical vapor transport (CVT) growth method. To address this issue, small amounts of tellurium were added to Red Phosphorus to act as a dopant during the CVT growth process in addition to tin(Sn) and tin(IV) iodide, which facilitate growth. The chemicals are heated up to 600°C and precisely cooled in a 21-hour process, during which BP crystals should form. After …

Electrical Characterization Of Irradiated Semiconducting Amorphous Hydrogenated Boron Carbide, George Glen Peterson

Department of Mechanical and Materials Engineering: Dissertations, Theses, and Student Research

Semiconducting amorphous partially dehydrogenated boron carbide has been explored as a neutron voltaic for operation in radiation harsh environments, such as on deep space satellites/probes. A neutron voltaic device could also be used as a solid state neutron radiation detector to provide immediate alerts for radiation workers/students, as opposed to the passive dosimetry badges utilized today. Understanding how the irradiation environment effects the electrical properties of semiconducting amorphous partially dehydrogenated boron carbide is important to predicting the stability of these devices in operation. p-n heterojunction diodes were formed from the synthesis of semiconducting amorphous partially dehydrogenated boron carbide on silicon …

Electron Paramagnetic Resonance Study Of Neutral Mg Acceptors In Β-Ga2O3 Crystals, Brant E. Kananen, Larry E. Halliburton, Elizabeth M. Scherrer, K. T. Stevens, G. K. Foundos, K. B. Chang, Nancy C. Giles

Faculty Publications

Electron paramagnetic resonance (EPR) is used to directly observe and characterize neutral Mg acceptors (Mg⁰_Ga) in a β-Ga₂O₃ crystal. These acceptors, best considered as small polarons, are produced when the Mg-doped crystal is irradiated at or near 77 K with x rays. During the irradiation, neutral acceptors are formed when holes are trapped at singly ionized Mg acceptors (Mg−Ga). Unintentionally present Fe³⁺ (3d⁵) and Cr³⁺ (3d³) transition-metal ions serve as the corresponding electron traps. The hole is localized in a nonbonding p orbital on a threefold-coordinated oxygen ion …