Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons™

Open Access. Powered by Scholars. Published by Universities.®

Electrical and Computer Engineering

Institution
Keyword
Publication Year
Publication
Publication Type
File Type

Articles 34321 - 34350 of 36792

Full-Text Articles in Engineering

A Magnetic Suspension System With A Large Angular Range, Colin P. Britcher, Mehran Ghofrani Jan 1993

A Magnetic Suspension System With A Large Angular Range, Colin P. Britcher, Mehran Ghofrani

Mechanical & Aerospace Engineering Faculty Publications

In order to explore and develop technology required for the magnetic suspension of objects over large ranges of orientation, a small-scale laboratory system, the large-angle magnetic suspension test fixture (LAMSTF) has been constructed at NASA Langley Research Center. This apparatus falls into the category of large-gap, actively stabilized magnetic levitation systems. The hardware comprises five conventional electromagnets in a circular arrangement, each driven from a separate bipolar power amplifier. Electromagnet currents are commanded by a digital control system, implemented on a microcomputer, which in turn derives the position and attitude of the suspended element from an infrared optical system. The …

Go to article

Direct Measurements Of The Transport Of Nonequilibrium Electrons In Gold Films With Different Crystal Structures, T. Juhasz, H. E. Elsayed-Ali, G. O. Smith, C. Suárez, W. E. Bron Jan 1993

Direct Measurements Of The Transport Of Nonequilibrium Electrons In Gold Films With Different Crystal Structures, T. Juhasz, H. E. Elsayed-Ali, G. O. Smith, C. Suárez, W. E. Bron

Electrical & Computer Engineering Faculty Publications

The transport of femtosecond-laser-excited nonequilibrium electrons across polycrystalline and single-crystalline gold films has been investigated through time-of-flight measurements. The thicknesses of the films range from 25 to 400 nm. Ballistic electrons as well as electrons interacting with other electrons and/or with the lattice have been observed. The ballistic component dominates the transport in the thinner films, whereas the interactive transport mechanism is dominant at the upper end of the thickness range. A slower effective velocity of the interactive component is observed in the polycrystalline samples, and is assumed to arise from the presence of grain boundaries. The reflection coefficient of …

Go to article

Efficient Simulation Of Multicarrier Digital Communication Systems In Nonlinear Channel Environments, Kevin W. Schneider, William H. Tranter Jan 1993

Efficient Simulation Of Multicarrier Digital Communication Systems In Nonlinear Channel Environments, Kevin W. Schneider, William H. Tranter

Electrical and Computer Engineering Faculty Research & Creative Works

The effectiveness of computer simulation as a tool for the design and analysis of communication systems is often limited by the long execution times required for many simulations. When simulating multicarrier digital communication systems operating over nonlinear channels, the required high sampling rate contributes significantly to long execution times. A new method that reduces the sampling rate of simulations of such systems is developed. This Partial Sum of Products (ParSOP) method reduces the sampling rate by generating only the intermodulation products that lie in a frequency band of interest. The ParSOP method requires that the bandpass nonlinearity be represented by …

Go to article

An Optoelectronic Implementation Of The Adaptive Resonance Neural Network, Donald C. Wunsch, T. P. Caudell, R. J. Marks, R. A. Falk, C. David Capps Jan 1993

An Optoelectronic Implementation Of The Adaptive Resonance Neural Network, Donald C. Wunsch, T. P. Caudell, R. J. Marks, R. A. Falk, C. David Capps

Electrical and Computer Engineering Faculty Research & Creative Works

A solution to the problem of implementation of the adaptive resonance theory (ART) of neural networks that uses an optical correlator which allows the large body of correlator research to be leveraged in the implementation of ART is presented. The implementation takes advantage of the fact that one ART-based architecture, known as ART1, can be broken into several parts, some of which are better to implement in parallel. The control structure of ART, often regarded as its most complex part, is actually not very time consuming and can be done in electronics. The bottom-up and top-down gated pathways, however, are …

Go to article

Design And Construction Of Maintainable Knowledge Bases Through Effective Use Of Entity-Relationship Modeling Techniques, William Yancey Pike Jan 1993

Design And Construction Of Maintainable Knowledge Bases Through Effective Use Of Entity-Relationship Modeling Techniques, William Yancey Pike

Retrospective Theses and Dissertations

The use of an accepted logical database design tool, Entity-Relationship Diagrams (E-RD), is explored as a method by which conceptual and pseudo-conceptual knowledge bases may be designed. Extensions to Peter Chen's classic E-RD method which can model knowledge structure used by knowledge-based applications are explored. The use of E-RDs to design knowledge bases is proposed as a two-stage process. In the first stage, and E-RD, termed the Essential E-RD, is developed of the realm of the problem or enterprise being modeled. The Essential E-RD is completely independent of any knowledge representation model (KRM) and is intended for the understanding of …

Go to article

Semi-Insulating Polysilicon Hetero- And Isotype Junctions On Silicon, R. M. Ranade, S. S. Ang, W. D. Brown Jan 1993

Semi-Insulating Polysilicon Hetero- And Isotype Junctions On Silicon, R. M. Ranade, S. S. Ang, W. D. Brown

Journal of the Arkansas Academy of Science

The effects of nitrogen trifluorideinthe gas stream during deposition of semi-insulating polysilicon (SIPOS) on the electrical characteristics of undoped (SIPSO)/p-Si, and n+-SIPOS/n-Si isotype junctions were investigated. The current-voltage characteristics of undoped SIPOS/p-Si heterojunctions exhibit a strong dependence on the oxygen content of the SIPOS film and depart from a hyperbolic sine behavior as the refractive index of the SIPOS increases.. The addition of nitrogen trifluoride decreases the current density of these undoped SIPOS/p-Si heterojunctions due presumably to the oxidation/hydrolysis of SiF species intoSiO2. The n+-SIPOS formed a rectifying isotype junction o n-Si. The forward current voltage characteristics exhibit two distinct …

Go to article

Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen Jan 1993

Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen

Bioelectrics Publications

The temporal development of the electric field distribution in semi‐insulating GaAs photoconductive switches operated in the linear and lock‐on mode has been studied. The field structure was obtained by recording a change in the absorption pattern of the switch due to the Franz–Keldysh effect at a wavelength near the band edge of GaAs. In the linear mode, a high field layer develops at the cathode contact after laser activation. With increasing applied voltage, domainlike structures become visible in the anode region and the switch transits into the lock‐on state, a permanent filamentary electrical discharge. Calibration measurements show the field intensity …

Go to article

Design And Implementation Of Fuzzy Logic Controllers. Thesis Final Report, 27 July 1992 - 1 January 1993, Osama A. Abihana, Oscar R. Gonzalez Jan 1993

Design And Implementation Of Fuzzy Logic Controllers. Thesis Final Report, 27 July 1992 - 1 January 1993, Osama A. Abihana, Oscar R. Gonzalez

Electrical & Computer Engineering Faculty Publications

The main objectives of our research are to present a self-contained overview of fuzzy sets and fuzzy logic, develop a methodology for control system design using fuzzy logic controllers, and to design and implement a fuzzy logic controller for a real system. We first present the fundamental concepts of fuzzy sets and fuzzy logic. Fuzzy sets and basic fuzzy operations are defined. In addition, for control systems, it is important to understand the concepts of linguistic values, term sets, fuzzy rule base, inference methods, and defuzzification methods. Second, we introduce a four-step fuzzy logic control system design procedure. The design …

Go to article

Faulty Behavior Of Storage Elements And Its Effects On Sequential Circuits, Waleed K. Al-Assadi, Y. K. Malaiya, A. P. Jayasumana Jan 1993

Faulty Behavior Of Storage Elements And Its Effects On Sequential Circuits, Waleed K. Al-Assadi, Y. K. Malaiya, A. P. Jayasumana

Electrical and Computer Engineering Faculty Research & Creative Works

It is often assumed that the faults in storage elements (SEs) can be modeled as output/input stuck-at faults of the element. They are implicitly considered equivalent to the stuck-at faults in the combinational logic surrounding the SE cells. Transistor-level faults in common SEs are examined here. A more accurate higher level fault model for elementary SEs that better represents the physical failures is presented. It is shown that a minimal (stuck-at) model may be adequate if only modest fault coverage is desired. The enhanced model includes some common fault behaviors of SEs that are not covered by the minimal fault …

Go to article

Artificial Intelligence Applied To Detection Of Melanoma, Arve Kjoelen, Scott E. Umbaugh, William V. Stoecker, Randy Hays Moss Jan 1993

Artificial Intelligence Applied To Detection Of Melanoma, Arve Kjoelen, Scott E. Umbaugh, William V. Stoecker, Randy Hays Moss

Electrical and Computer Engineering Faculty Research & Creative Works

No abstract provided.

Go to article

A Spectral Flux Method For Solving The Boltzmann Equation, Muhammad A. Alam, Mark A. Stettler, Mark S. Lundstrom Jan 1993

A Spectral Flux Method For Solving The Boltzmann Equation, Muhammad A. Alam, Mark A. Stettler, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

A spectral method for solving the Boltzmann equation by the scattering matrix approach is presented, The algorithm discussed can be used to simulate both bulk and device properties with arbitrary field profiles. Although the primary goal is to reduce the data storage problem of the scattering matrix approach, many of the concepts and mathematical properties developed may be useful for other traditional spectral methods as well.

Go to article

Minority-Carrier Mobility Enhancement In P+ Ingaas Lattice Matched To Inp, E. S. Harmon, Michael L. Lovejoy, Michael R. Melloch, Mark S. Lundstrom, D. Ritter, R. A. Hamm Jan 1993

Minority-Carrier Mobility Enhancement In P+ Ingaas Lattice Matched To Inp, E. S. Harmon, Michael L. Lovejoy, Michael R. Melloch, Mark S. Lundstrom, D. Ritter, R. A. Hamm

Department of Electrical and Computer Engineering Faculty Publications

Minority electron mobilities in pf-In0.ssGac4, As have been measured with the zero field time-of-flight technique. The room-temperature (297 K) minority electron mobilities for p+-In,, 53Gac47A~ doped 0.9 and 3.1 x 10” cmm3 are found to be 2900 and 3300 cm* V-’ s-l, respectively. These are the first measurements to demonstrate enhancement in minority-carrier mobility as doping is increased for heavily doped Ines3Gae.4+s. This enhancement in mobility as doping is increased is similar to that observed in p+-GaAs, which has been attributed to reductions in plasmon and carrier-carrier scattering between minority electrons and majority holes.

Go to article

Concentration‐Dependent Optical‐Absorption Coefficient In N‐Type Gaas, Gregory Benedict Lush, H. F. Macmillan, S. Asher, Michael R. Melloch, Mark S. Lundstrom Jan 1993

Concentration‐Dependent Optical‐Absorption Coefficient In N‐Type Gaas, Gregory Benedict Lush, H. F. Macmillan, S. Asher, Michael R. Melloch, Mark S. Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

The doping-dependent, near-band-edge optical-absorption coefficient CY(h v) was deduced from optical transmission measurements in n-type GaAs thin films. The selenium-doped films were grown by metalorganic chemical-vapor deposition and do ed to produce room-temperature electron concentrations from 1.3 x 10” to 3.8X 1018 cm- P . The transmission measurements covered photon energies between 1.35 and 1.7 eV and were performed on double heterostructures with the substrate removed by selective etching. The results show good qualitative agreement with previous studies and good quantitative agreement, except for the heavily doped samples. For na=3.8 X 10” cme3, a( 1.42 eV> is approximately four times …

Go to article

Experimental Observation Of A Minority Electron Mobility Enhancement In Degenerately Doped P-Type Gaas, E. S. Harmon, Michael L. Lovejoy, Michael R. Melloch, Mark S. Lundstrom, T. J. De Lyon, J. M. Woodall Jan 1993

Experimental Observation Of A Minority Electron Mobility Enhancement In Degenerately Doped P-Type Gaas, E. S. Harmon, Michael L. Lovejoy, Michael R. Melloch, Mark S. Lundstrom, T. J. De Lyon, J. M. Woodall

Department of Electrical and Computer Engineering Faculty Publications

The variation of minority electron mobility with doping density in p+-GaAs has been measured with the zero-field time-of-flight technique. The results from a series of nine GaAs films doped between 1 X lOI and 8 X 10” cmm3 show the mobility decreasing from 1950 cm2 V-’ s-l at 1 X 10” cmm3 to 1370 cm2 V-l s-l at 9X 10” cmB3. For the doping range 9 x 1018-8x 1019 cme3, the decreasing trend in mobility is reversed. The measured mobility of 3710 cm2 V-’ s-l at 8 X 10” cmp3 is about three times higher than the measured value at …

Go to article

Feature Extraction And Classification Algorithms For High Dimensional Data, Chulhee Lee, David Landgrebe Jan 1993

Feature Extraction And Classification Algorithms For High Dimensional Data, Chulhee Lee, David Landgrebe

Department of Electrical and Computer Engineering Technical Reports

In this research, feature extraction and classification algorithms for high dimensional data are investigated. Developments with regard to sensors for Earth observation are moving in the direction of providing much higher dimensional multispectral imagery than is now possible. In analyzing such high dimensional data, processing time becomes an important factor. With large increases in dimensionality and the number of classes, processing time will increase significantly. To address this problem, a multistage classification scheme is proposed which reduces the processing time substantially by eliminating unlikely classes from further consideration at each stage. Several truncation criteria are developed and the relationship between …

Go to article

Pump And Signal Cross Saturation In Cw Dye Lasers, Lee W. Casperson, A. C. Wilson, W. J. Sandle Jan 1993

Pump And Signal Cross Saturation In Cw Dye Lasers, Lee W. Casperson, A. C. Wilson, W. J. Sandle

Electrical and Computer Engineering Faculty Publications and Presentations

It is well known that the signal output intensity from a dye laser oscillator depends directly on the pump intensity. The opposite effect, the dependence of the transmitted pump intensity on the signal intensity, is studied in detail. The theoretical results are compared with experimental data obtained using an argon‐laser‐pumped rhodamine 6G dye laser.

Go to article

Ultrashort‐Pulse Propagation In Dye Laser Amplifiers, Shuanghua Jiang, Lee W. Casperson Jan 1993

Ultrashort‐Pulse Propagation In Dye Laser Amplifiers, Shuanghua Jiang, Lee W. Casperson

Electrical and Computer Engineering Faculty Publications and Presentations

A semiclassical model is presented for ultrashort‐pulse dye laser amplifiers. The model permits a discussion of important aspects of short‐pulse amplification such as pulse shape, pulse energy, and gain saturation. Coherence effects are found to be important in characterizing the evolution of amplified pulses in the subpicosecond and femtosecond regimes. The results are compared with those obtained using the corresponding rate equation model.

Go to article

Design Of Distortion-Invariant Correlation Filters Using Supervised Learning, Samuel Peter Kozaitis, Rufus H. Cofer, Wesley E. Foor Jan 1993

Design Of Distortion-Invariant Correlation Filters Using Supervised Learning, Samuel Peter Kozaitis, Rufus H. Cofer, Wesley E. Foor

Electrical Engineering and Computer Science Faculty Publications

We designed binary phase-only filters from a training set of images using a statistical approach. We forced images into clusters and designed filters to recognize objects from that cluster. We report on results obtained by computer simulation comparing the performance of filters to recognize objects from clusters of one and two classes.

Go to article

Modeling Of Intra-Cell Defects In Cmos Sram, Waleed K. Al-Assadi, Y. K. Malaiya, A. P. Jayasumana Jan 1993

Modeling Of Intra-Cell Defects In Cmos Sram, Waleed K. Al-Assadi, Y. K. Malaiya, A. P. Jayasumana

Electrical and Computer Engineering Faculty Research & Creative Works

The effect of defects within a single cell of a static random access memory (SRAM) is examined. All major types of faults, including bridging, transistor stuck-open and stuck-on, are examined. A significant fraction of all faults cause high IDDQ values to be observed. Faults leading to inter-cell coupling are identified.

Go to article

Neural Networks In The Former Soviet Union, Donald C. Wunsch Jan 1993

Neural Networks In The Former Soviet Union, Donald C. Wunsch

Electrical and Computer Engineering Faculty Research & Creative Works

No abstract provided.

Go to article

Automatic Color Segmentation Algorithms-With Application To Skin Tumor Feature Identification, Scott E. Umbaugh, Randy Hays Moss, William V. Stoecker, G. A. Hance Jan 1993

Automatic Color Segmentation Algorithms-With Application To Skin Tumor Feature Identification, Scott E. Umbaugh, Randy Hays Moss, William V. Stoecker, G. A. Hance

Electrical and Computer Engineering Faculty Research & Creative Works

Two color-image segmentation methods are described. The first is based on a spherical coordinate transform of original RGB data. The second is based on a mathematically optimal transform, the principal components transform (also known as eigenvector, discrete Karhunen-Loeve, or Hotelling transform). These algorithms are applied to the extraction from skin tumor images of various features such as tumor border, crust, hair scale, shiny areas, and ulcer. The results of this research will be used in the development of a computer vision system that will serve as the visual front-end of a medical expert system to automate visual feature identification for …

Go to article

Detection Of Skin Tumor Boundaries In Color Images, Fikret Erçal, M. Moganti, William V. Stoecker, Randy Hays Moss Jan 1993

Detection Of Skin Tumor Boundaries In Color Images, Fikret Erçal, M. Moganti, William V. Stoecker, Randy Hays Moss

Computer Science Faculty Research & Creative Works

A simple and yet effective method for finding the borders of tumors is presented as an initial step towards the diagnosis of skin tumors from their color images. The method makes use of an adaptive color metric from the red, green, and blue planes that contains information for discriminating the tumor from the background. Using this suitable coordinate transformation, the image is segmented. The tumor portion is then extracted from the segmented image and borders are drawn. Experimental results that verify the effectiveness of this approach are given

Go to article

Superheating Of Bi(0001), E. A. Murphy, H. E. Elsayed-Ali, J. W. Herman Jan 1993

Superheating Of Bi(0001), E. A. Murphy, H. E. Elsayed-Ali, J. W. Herman

Electrical & Computer Engineering Faculty Publications

Superheating of Bi(0001) by about 90 K above the bulk melting temperature is observed using time-resolved reflection high-energy electron diffraction with ∼200-ps time resolution. Larger temperature excursions above the bulk melting temperature result in melting accompanied by irreversible laser damage to the surface. The rhombohedral structure of Bi leads to very different behavior of material parameters upon melting as compared with fcc metals. Therefore, our observation of the superheating of Bi(0001), together with the previously observed superheating of Pb(111), suggests the generality of the superheating phenomenon.

Go to article

Reliability Trend Analyses With Statistical Confidence Limits Using The Luke Reliability Trend Chart, Stephen R. Luke Jan 1993

Reliability Trend Analyses With Statistical Confidence Limits Using The Luke Reliability Trend Chart, Stephen R. Luke

Engineering Management & Systems Engineering Theses & Dissertations

In electronic systems, it is interesting to understand exactly how the reliability is changing with time. Dynamic performance changes when a system passes from infant mortality stage into useful life phase and when the system passes from useful life phase into wearout phase. Dynamic performance also changes when the system is redesigned or when the system is acted on by a number of other outside forces such as a change in maintenance policy, escalation of alignment problems, or a change in training program. It is important to know when a system is changing dynamically in order to assess design, policy …

Go to article

Studies Of Electron-Beam Penetration And Free-Carrier Generation In Diamond Films, R. P. Joshi, K. H. Schoenbach, C. Molina, W. W. Hofer Jan 1993

Studies Of Electron-Beam Penetration And Free-Carrier Generation In Diamond Films, R. P. Joshi, K. H. Schoenbach, C. Molina, W. W. Hofer

Bioelectrics Publications

Experimental observations of the energy‐dependent electron‐beam penetration in type II‐A natural diamond are reported. The experimental data are compared with results obtained from numerical Monte Carlo simulations, and the results are in very good agreement. The results also reveal that a threshold energy of about 125 keV is necessary for complete penetration for a 35 μm sample. It is found that over the 30–180 keV range, the energy dependence of the penetration depth and total path length exhibits a power‐law relation. Monte Carlo simulations have also been performed to investigate the excess carrier‐generation profiles within diamond for a set of …

Go to article

Thermally Activated Reversible Threshold Shifts In Yba2Cu3O7-Δ/Yttria-Stabilized Zirconia/Si Capacitors, Jianmin Qiao, Eric M. Ajimine, Paresh P. Patel, Geoffrey L. Giese, Cary Y. Yang Dec 1992

Thermally Activated Reversible Threshold Shifts In Yba2Cu3O7-Δ/Yttria-Stabilized Zirconia/Si Capacitors, Jianmin Qiao, Eric M. Ajimine, Paresh P. Patel, Geoffrey L. Giese, Cary Y. Yang

Electrical and Computer Engineering

Yba2Cu3O7-δ/yttria‐stabilized zirconia (YSZ)/silicon superconductor–insulator–semiconductor capacitors are characterized with capacitance‐voltage (C‐V) measurements at different gate‐voltage sweep rates and under bias‐temperature cycling. It is shown that ionic conduction in YSZ causes both hysteresis and stretch‐out in room‐temperature C‐V curves. A thermally activated process with an activation energy of about 39 meV in YSZ and/or at YSZ/Si interface is attributed to trapping/detrapping mechanisms in the SiOx interfacial layer between YSZ and Si. The negative mobile ions in YSZ can be moved by an applied electric field at room temperature and then ‘‘frozen’’ with decreasing temperature, giving …

Go to article

Nanosecond Transient Electroluminescene From Polymer Light-Emitting Diodes, David Braun, D. Moses, C. Zhang, A. J. Heeger Dec 1992

Nanosecond Transient Electroluminescene From Polymer Light-Emitting Diodes, David Braun, D. Moses, C. Zhang, A. J. Heeger

Electrical Engineering

The transient electroluminescence from polymer light-emitting diodes is reported. When the devices are mounted on a microstrip transmission line, the temporal response is limited by the electrode geometry, with rise and fall times below 50 ns. With low duty-cycle pulses (0.5%) the electroluminescence intensity remains proportional to the current at values up to 10 A/cm2, two orders of magnitude greater than possible under direct current operation. Since the spectral blue-shift observed at high current levels (with power dissipation above 1 W/cm2) indicates significant sample heating, still higher levels should be possible with proper thermal management.

Go to article

Fuzzy Logic Applied To Adaptive Kalman Filtering, Marlys Rae Remus Dec 1992

Fuzzy Logic Applied To Adaptive Kalman Filtering, Marlys Rae Remus

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

The Kalman filter provides an effective means of estimating the state of a system from noisy measurements given that the system parameters are completely specified. The innovations sequence for a properly specified Kalman filter will be a zero-mean white noise process. However, when the system parameters change with time the Kalman filter will need to be adapted to compensate for the changes. Traditionally this has been accomplished by using nonlinear filtering, parallel Kalman filtering and covariance matching techniques. These methods have produced good results at the expense of large amounts of computational time. Necessary changes in the system parameters become …

Go to article

A Computational Algorithm For Squaring-Up, Part I: Zero Input-Output Matrix, Pradeep Misra Dec 1992

A Computational Algorithm For Squaring-Up, Part I: Zero Input-Output Matrix, Pradeep Misra

Electrical Engineering Faculty Publications

In this paper, some preliminary results on the problem of squaring-up a non-square linear multivariable system are presented. It. is shown that. for the case considered here. the squaring-up problem can be transformed into a state feedback problem. An illustrative numerical example is included to illustrate the results developed.

Go to article

Semiconductor P-N Junction Space Charge Region Capacitance, Mohammad Humayun Habib Dec 1992

Semiconductor P-N Junction Space Charge Region Capacitance, Mohammad Humayun Habib

Dissertations and Theses

The classical capacitance voltage characteristics based on the depletion approximation, is adequate at reverse bias, but introduces errors at high forward bias. Because of its inherent simplicity and compactness this classical depletion model is well studied and widely used in circuit simulators. In this work, a new model for the semiconductor space charge region (SCR) capacitance, based on physical justification, will be derived. This new model takes three input parameters, C0 , Vbi and m, thus eliminating the fitting parameter FC currently used in SPICE. This new model is applicable for any applied voltage and will be compared with the …

Go to article

First Prev Next Last