Semiconductor and Optical Materials Commons^™

Fabrication And Optical Properties Of Two-Dimensional Transition Metal Dichalcogenides, Manpreet Boora

Dissertations, Master's Theses and Master's Reports

Two-dimensional layered materials such as graphene and transition metal dichalcogenides have gained a lot of attention because of their distinctive chemical, optical, and electronic properties. Transition metal dichalcogenides can have a tunable bandgap in the range of 1 − 3 eV (visible), which enables their applications in ultrathin field effect transistors, photovoltaics, sensors, and optoelectronic devices. They exhibit an indirect-to-direct band gap transition when thinned down from bulk to a single layer. They show strong photoluminescence, electron–photon interaction, valley pseudospin, nonlinear optical response, and lack of dangling bonds. Many exotic phenomena appear when materials are thinned to nanoscale size because …

Synthesis Of Quasi-Freestanding Graphene Films Using Radical Species Formed In Cold Plasmas, Michael A. Mathews Jr.

Graduate Theses, Dissertations, and Problem Reports (ETD)

For over a decade, the Stinespring laboratory has investigated scalable, plasma assisted synthesis (PAS) methods for the growth of graphene films on silicon carbide (SiC). These typically utilized CF₄-based inductively coupled plasma (ICP) with reactive ion etching (RIE) to selectively etch silicon from the SiC lattice. This yielded a halogenated carbon-rich surface layer which was then annealed to produce the graphene layers. The thickness of the films was controlled by the plasma parameters, and overall, the process was readily scalable to the diameter of the SiC wafer.

The PAS process reproducibly yielded two- to three-layer thick graphene films …

The Application Of Photoelectron Spectroscopies In Analyzing The Impact Of Interfacial Energetics On Perovskite Solar Cells, Tuo Liu

Theses and Dissertations--Chemistry

In recent years, organic-inorganic metal halide perovskites (HP) have garnered tremendous attention in photovoltaic research. This attention is attributed to their low cost and excellent optoelectronic properties, including large absorption coefficients, tunable bandgaps, long charge-carrier diffusion lengths, and low densities of deep trap states. Inverted p-i-n architecture perovskite solar cells (PSCs) are of intense interest and are generally regarded as more amenable to low-temperature solution processing. Nevertheless, the development of inverted PSCs is lagging the conventional architecture devices. Imperfect energy level alignments and charge carrier recombination, especially at the interface between perovskite and electron transport layers (ETLs), are two main …

Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula

Dissertations

Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …

Void-Semiconductor Gaas Photonic Crystal Surface-Emitting Lasers By Epitaxial Regrowth And Single-Epitaxy Methods, Kevin James Reilly

Nanoscience and Microsystems ETDs

Monolithic semiconductor lasers including edge-emitting lasers (EELs) and vertical-cavity surface-emitting lasers (VCSELs) fail to realize simultaneous achievement of both high-power high-quality beams due to intrinsic limitations of their resonant cavity. Photonic crystal surface emitting lasers (PCSELs) address these structural limitations through employment of a two-dimensional photonic crystal (PC) cavity that creates feedback at a single wavelength for laterally scalable devices. This function of the PC allows PCSELs to power scale with area while maintaining single-mode emission required for diffraction-limited beams. In this way, PCSELs fulfill an industry demand for high-power high-quality lasing from a single chip.

Early PCSELs were fabricated …

Design, Fabrication, And Characterization Of Conjugated Polymeric Electrochemical Memristors As Neuromorphic/Integrated Circuits, Benjamin Grant

All Dissertations

Organic materials are promising candidates for future electronic devices compared to the complementing inorganic materials due to their ease of processability, use, and disposal, low cost of fabrication, energy efficiency, and flexible nature toward implementation as flexible and non-conformal devices.With that in mind, electrochemical materials have been widely demonstrated with commercial use as sensors, displays, and a variety of other electronic devices. As Moore's law predicts the increase in the density of transistors on a chip, the requirement to create either smaller transistors or the replacement of the transistor device entirely is apparent. Memory resistors, coined ``memristor", are variable resistive …

Seeing The Big Picture: System Architecture Trends In Endoscopy And Led-Based Hyperspectral Subsystem Intergration, Craig M. Browning

Graduate Theses and Dissertations (2019 - present)

Early-stage colorectal lesions remain difficult to detect. Early development of neoplasia tends to be small (less than 10 mm) and flat and difficult to distinguish from surrounding mucosa. Additionally, optical diagnosis of neoplasia as benign or malignant is problematic. Low rates of detection of these lesions allow for continued growth in the colorectum and increased risk of cancer formation. Therefore, it is crucial to detect neoplasia and other non-neoplastic lesions to determine risk and guide future treatment. Technology for detection needs to enhance contrast of subtle tissue differences in the colorectum and track multiple biomarkers simultaneously. This work implements one …

Investigation Of Gaas Double Heterostructures For Photonic Heat Engines, Nathan Giannini-Hutchin

Optical Science and Engineering ETDs

The creation of a laser cooled semiconductor device has been a long sought achievement. GaAs-based devices have emerged as a promising candidate for the realization of this goal. Efforts to improve the efficiency of such devices have enabled the material to exhibit external quantum efficiencies (EQE, a measure of the probability that an excitation leads to the emission of a photon) of 99.5\%. Despite this impressive feat, a laser coolable device remains elusive.

To investigate the obstacles to such a device, the material characteristics of GaAs-based double heterostructures (DHS) are theoretically and experimentally examined. Through this study, a GaAs $\vert$ …

Transition-Metal Ions In Β-Ga2O3 Crystals: Identification Of Ni Acceptors, Timothy D. Gustafson, Nancy C. Giles, Brian C. Holloway, J. Jesenovec, B. L. Dutton, M. D. Mccluskey, Larry E. Halliburton

Faculty Publications

Excerpt: Transition-metal ions (Ni, Cu, and Zn) in β-Ga₂O₃ crystals form deep acceptor levels in the lower half of the bandgap. In the present study, we characterize the Ni acceptors in a Czochralski-grown crystal and find that their (0/−) level is approximately 1.40 eV above the maximum of the valence band.

Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles

Mechanical Engineering ETDs

Lead zirconate titanate (PZT) has been a material of interest for sensor, actuator, and transducer applications in microelectromechanical systems (MEMS). This is due to their favorable piezoelectric, pyroelectric and ferroelectric properties. While various methods are available to deposit PZT thin films, radio frequency (RF) magnetron sputtering was selected to provide high quality PZT films with the added capability of batch processing. These sputter deposited PZT films were characterized to determine their internal film stress, Young’s modulus, composition, and structure. After characterization, the sputtered PZT samples were poled using corona poling and direct poling methods. As a means of comparison, commercially …

Sculpting Charge In Graphene Through Patterned Strain, Dylan J. Balter, Jenna Smith

The Journal of Purdue Undergraduate Research

No abstract provided.

Optimizing Switching Of Non-Linear Properties With Hyperbolic Metamaterials, James A. Ethridge, John G. Jones, Manuel R. Ferdinandus, Michael J. Havrilla, Michael A. Marciniak

Faculty Publications

Hyperbolic metamaterials have been demonstrated to have special potential in their linear response, but the extent of their non-linear response has not been extensively modeled or measured. In this work, novel non-linear behavior of an ITO/SiO₂ layered hyperbolic metamaterial is modeled and experimentally confirmed, specifically a change in the sign of the non-linear absorption with intensity. This behavior is tunable and can be achieved with a simple one-dimensional layered design. Fabrication was performed with physical vapor deposition, and measurements were conducted using the Z-scan technique. Potential applications include tunable optical switches, optical limiters, and tunable components of laser sources.

Oxygen Vacancies In Lib3O5 Crystals And Their Role In Nonlinear Absorption, Brian C. Holloway, Christopher A. Lenyk, Timothy D. Gustafson, Nancy C. Giles

Faculty Publications

LiB₃O₅ (LBO) crystals are used to generate the second, third, and fourth harmonics of near-infrared solid-state lasers. At high power levels, the material’s performance is adversely affected by nonlinear absorption. We show that as-grown crystals contain oxygen and lithium vacancies. Transient absorption bands are formed when these intrinsic defects serve as traps for “free” electrons and holes created by x rays or by three- and four-photon absorption processes. Trapped electrons introduce a band near 300 nm and trapped holes produce bands in the 500-600 nm region. Electron paramagnetic resonance (EPR) is used to identify and characterize the …

Fabrication And Non-Covalent Functionalization And Characterization Of Graphene-Based Devices On Novel Substrate Cadmium Trithiophosphate (Iv) — Cdps, Abayomi Omotola Omolewu

Graduate Theses and Dissertations

With graphene at the center of several application areas such as sensing, circuits, high-frequency devices for communication systems, etc., it is crucial to understand how the intrinsic properties of devices made from graphene and other materials like platinum and palladium nanoparticles affect the performance of such devices for the specific application area. Many graphene-based devices for different application areas have focused mainly on the material composition of the graphene-based devices and how it affects performance parameters for the specific application. However, it would be insightful to understand how the intrinsic electrical properties of the graphene devices for different applications affect …

Sub-Bandgap Photon-Assisted Electron Trapping And Detrapping In Algan/Gan Heterostructure Field-Effect Transistors, Andrew Gunn

All Theses

We have investigated photon-assisted trapping and detrapping of electrons injected from the gate under negative bias in a heterostructure field-effect transistor (HFET). The electron injection rate from the gate was found to be dramatically affected by sub-bandgap laser illumination. The trapped electrons reduced the two-dimensional electron gas (2DEG) density at the AlGaN/GaN heterointerface but could also be emitted from their trap states by sub-bandgap photons, leading to a recovery of 2DEG density. The trapping and detrapping dynamics were found to be strongly dependent on the wavelength and focal position of the laser, as well as the gate bias stress time …

Xps And Ipe Determination Of Band Offsets Of Germanium Based Materials, Justin Michael Rudie

Graduate Theses and Dissertations

Germanium tin and silicon germanium tin are group IV semiconductor alloys that have gained significant interest in recent years for their potential use in optoelectrical devices. While silicon and germanium are indirect bandgap materials on their own, alloying them with tin in sufficient quantities leads to a transition to direct bandgap alloys. Direct gap performance opens the door for efficient light emitting and detecting devices fabricated entirely on group IV materials that are compatible with the industry standard CMOS manufacturing techniques. Germanium tin and silicon germanium tin have bandgaps that respond to light in the mid to near infrared spectrum …

Etching Process Development For Sic Cmos, Weston Reed Renfrow

Graduate Theses and Dissertations

Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities that make it a helpful semiconductor in extreme environments where silicon devices fail. The development of a SiC CMOS is in its infancy. There are many improvements that need to be made to develop this technology further. Photolithography is the most significant bottleneck in the etching process; it was studied and improved upon. Etching SiC can be a challenge with its reinforced crystal structure. Chlorine-based inductively coupled plasma (ICP) etching of intrinsic SiC and doped SiC, SiO2, and Silicon has been studied. A baseline chlorine …

Study Of Single-Photon Wave-Packets With Atomically Thin Nonlinear Mirrors, Christopher Klenke

Graduate Theses and Dissertations

A novel controlled phase gate for photonic quantum computing is proposed by exploiting the powerful nonlinear optical responses of atomically thin transition metal dichalcogenides (TMDs) and it is shown that such a gate could elicit a π-rad phase shift in the outgoing electric field only in the case of two incident photons and no other cases. Firstly, the motivation for such a gate is developed and then the implementation of monolayer TMDs is presented as a solution to previous realization challenges. The single-mode case of incident photons upon a TMD is derived and is then used to constrain the more …

Subwavelength Engineering Of Silicon Photonic Waveguides, Farhan Bin Tarik

All Dissertations

The dissertation demonstrates subwavelength engineering of silicon photonic waveguides in the form of two different structures or avenues: (i) a novel ultra-low mode area v-groove waveguide to enhance light-matter interaction; and (ii) a nanoscale sidewall crystalline grating performed as physical unclonable function to achieve hardware and information security. With the advancement of modern technology and modern supply chain throughout the globe, silicon photonics is set to lead the global semiconductor foundries, thanks to its abundance in nature and a mature and well-established industry. Since, the silicon waveguide is the heart of silicon photonics, it can be considered as the core …

Study Of Thin Gan/Ingan/Gan Double Graded Structures For Future Photovoltaic Application, Mirsaeid Sarollahi

Graduate Theses and Dissertations

Indium gallium nitride (In_x Ga_(1-x) N) materials have displayed great potential for photovoltaic and optoelectronic devices due to their optical and electrical properties. Properties such as direct bandgap, strong bandgap absorption, thermal stability and high radiation resistance qualify them as great materials for photovoltaic devices. The tunable bandgap which absorbs the whole solar spectrum is the most significant feature which became attractive for scientists. The bandgap for these materials varies from 0.7 eV for InN to 3.4 eV for GaN covering from infrared to ultraviolet. In_x Ga_(1-x) N wurtzite crystal is grown on GaN buffer layer by Molecular Beam Epitaxy …