Semiconductor and Optical Materials Commons^™

Angle Resolved Photoelectron Spectroscopy Study Of Germanium Tin: Experimentally Determined Electronic Band Gap And Surface Analysis, Jeremy M. Hunter

Theses and Dissertations

The germanium tin band gap is responsive to wavelengths in the mid to near infrared spectrum; this shows promise in meeting the detection demands of the next generation infrared detectors. Recent developments in germanium tin (GeSn) alloy growth techniques have peaked the scientific community’s interest in GeSn based optoelectrical and detection devices. Detection materials made entirely of group IV elements are compatible with complementary metal-oxide semiconductor manufacturing techniques. Understanding the surface chemistry of this alloy is fundamental for solid state device design and must be analyzed to optimize device performance. Studies have shown that with the addition of tin, the …

Characterizing Gesn Alloys By Sem/Eds And Photoluminescence Spectroscopy, Christopher M. Sutphin

Theses and Dissertations

Germanium tin (GeSn) alloys are being studied as potential transition metal (Group IV) photoelectric semiconductors or optical detectors. GeSn alloys could be employed as an optically active material within a computer. Compared to current technologies, a direct band gap GeSn alloy can be engineered to operate with higher thermal stability and efficiency. The GeSn alloy studied was composed of Ge and Si substrates with various Sn percentages grown using remote plasma-enhanced chemical vapor deposition (RPECVD). Photoluminescence spectroscopy (PL) techniques were initially used to determine the GeSn properties, including the band gap. The Ge_91.2Sn_8.8 PL spectra suggested the …

Methods For Determining The Infrared Complex Refractive Indices N(Λ) And K(Λ) From Organic Solid Powders: Comparison Of A Sucrose Single Crystal And A Pressed Pellet, Michael O. Yokosuk, Danielle L. Saunders, Charles Tom Resch, Jeremy D. Erickson, Charmayne E. Lonergan, Sarah D. Burton, Mark E. Bowden, Kelly A. Peterson, Timothy J. Johnson, Tanya L. Myers

Materials Science and Engineering Faculty Research & Creative Works

There exists a need to measure optical constants n and k for many materials, especially organic solids in the infrared spectral region, but at present, there are only two established methods for making such measurements: single-angle (SA) reflectance and infrared spectroscopic ellipsometry (IRSE). the former derives the n/k vectors via measurement of the change in the amplitude of light reflected from the sample and then uses the Kramers-Kronig transform, while the latter measures the change in polarization of the reflected light from the sample to derive n/k. Here we make a direct comparison between the n/k vectors derived from SA …

High Energy Blue Light Induces Oxidative Stress And Retinal Cell Apoptosis, Jessica Malinsky

Capstone Showcase

Blue light (BL) is a high energy, short wavelength spanning 400 to 500 nm. Found in technological and environmental forms, BL has been shown to induce photochemical damage of the retina by reactive oxygen species (ROS) production. Excess ROS leads to oxidative stress, which disrupts retinal mitochondrial structure and function. As mitochondria amply occupy photoreceptors, they also contribute to oxidative stress due to their selectively significant absorption of BL at 400 to 500 nm. ROS generation that induces oxidative stress subsequently promotes retinal mitochondrial apoptosis. BL filtering and preventative mechanisms have been suggested to improve or repair BL-induced retinal damage, …

Synthesis Of Quasi-Freestanding Graphene Films Using Radical Species Formed In Cold Plasmas, Michael A. Mathews Jr.

Graduate Theses, Dissertations, and Problem Reports (ETD)

For over a decade, the Stinespring laboratory has investigated scalable, plasma assisted synthesis (PAS) methods for the growth of graphene films on silicon carbide (SiC). These typically utilized CF₄-based inductively coupled plasma (ICP) with reactive ion etching (RIE) to selectively etch silicon from the SiC lattice. This yielded a halogenated carbon-rich surface layer which was then annealed to produce the graphene layers. The thickness of the films was controlled by the plasma parameters, and overall, the process was readily scalable to the diameter of the SiC wafer.

The PAS process reproducibly yielded two- to three-layer thick graphene films …

The Application Of Photoelectron Spectroscopies In Analyzing The Impact Of Interfacial Energetics On Perovskite Solar Cells, Tuo Liu

Theses and Dissertations--Chemistry

In recent years, organic-inorganic metal halide perovskites (HP) have garnered tremendous attention in photovoltaic research. This attention is attributed to their low cost and excellent optoelectronic properties, including large absorption coefficients, tunable bandgaps, long charge-carrier diffusion lengths, and low densities of deep trap states. Inverted p-i-n architecture perovskite solar cells (PSCs) are of intense interest and are generally regarded as more amenable to low-temperature solution processing. Nevertheless, the development of inverted PSCs is lagging the conventional architecture devices. Imperfect energy level alignments and charge carrier recombination, especially at the interface between perovskite and electron transport layers (ETLs), are two main …

Fabrication And Optical Properties Of Two-Dimensional Transition Metal Dichalcogenides, Manpreet Boora

Dissertations, Master's Theses and Master's Reports

Two-dimensional layered materials such as graphene and transition metal dichalcogenides have gained a lot of attention because of their distinctive chemical, optical, and electronic properties. Transition metal dichalcogenides can have a tunable bandgap in the range of 1 − 3 eV (visible), which enables their applications in ultrathin field effect transistors, photovoltaics, sensors, and optoelectronic devices. They exhibit an indirect-to-direct band gap transition when thinned down from bulk to a single layer. They show strong photoluminescence, electron–photon interaction, valley pseudospin, nonlinear optical response, and lack of dangling bonds. Many exotic phenomena appear when materials are thinned to nanoscale size because …

Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula

Dissertations

Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …

Void-Semiconductor Gaas Photonic Crystal Surface-Emitting Lasers By Epitaxial Regrowth And Single-Epitaxy Methods, Kevin James Reilly

Nanoscience and Microsystems ETDs

Monolithic semiconductor lasers including edge-emitting lasers (EELs) and vertical-cavity surface-emitting lasers (VCSELs) fail to realize simultaneous achievement of both high-power high-quality beams due to intrinsic limitations of their resonant cavity. Photonic crystal surface emitting lasers (PCSELs) address these structural limitations through employment of a two-dimensional photonic crystal (PC) cavity that creates feedback at a single wavelength for laterally scalable devices. This function of the PC allows PCSELs to power scale with area while maintaining single-mode emission required for diffraction-limited beams. In this way, PCSELs fulfill an industry demand for high-power high-quality lasing from a single chip.

Early PCSELs were fabricated …

Design, Fabrication, And Characterization Of Conjugated Polymeric Electrochemical Memristors As Neuromorphic/Integrated Circuits, Benjamin Grant

All Dissertations

Organic materials are promising candidates for future electronic devices compared to the complementing inorganic materials due to their ease of processability, use, and disposal, low cost of fabrication, energy efficiency, and flexible nature toward implementation as flexible and non-conformal devices.With that in mind, electrochemical materials have been widely demonstrated with commercial use as sensors, displays, and a variety of other electronic devices. As Moore's law predicts the increase in the density of transistors on a chip, the requirement to create either smaller transistors or the replacement of the transistor device entirely is apparent. Memory resistors, coined ``memristor", are variable resistive …

Seeing The Big Picture: System Architecture Trends In Endoscopy And Led-Based Hyperspectral Subsystem Intergration, Craig M. Browning

Graduate Theses and Dissertations (2019 - present)

Early-stage colorectal lesions remain difficult to detect. Early development of neoplasia tends to be small (less than 10 mm) and flat and difficult to distinguish from surrounding mucosa. Additionally, optical diagnosis of neoplasia as benign or malignant is problematic. Low rates of detection of these lesions allow for continued growth in the colorectum and increased risk of cancer formation. Therefore, it is crucial to detect neoplasia and other non-neoplastic lesions to determine risk and guide future treatment. Technology for detection needs to enhance contrast of subtle tissue differences in the colorectum and track multiple biomarkers simultaneously. This work implements one …

Investigation Of Gaas Double Heterostructures For Photonic Heat Engines, Nathan Giannini-Hutchin

Optical Science and Engineering ETDs

The creation of a laser cooled semiconductor device has been a long sought achievement. GaAs-based devices have emerged as a promising candidate for the realization of this goal. Efforts to improve the efficiency of such devices have enabled the material to exhibit external quantum efficiencies (EQE, a measure of the probability that an excitation leads to the emission of a photon) of 99.5\%. Despite this impressive feat, a laser coolable device remains elusive.

To investigate the obstacles to such a device, the material characteristics of GaAs-based double heterostructures (DHS) are theoretically and experimentally examined. Through this study, a GaAs $\vert$ …

Transition-Metal Ions In Β-Ga2O3 Crystals: Identification Of Ni Acceptors, Timothy D. Gustafson, Nancy C. Giles, Brian C. Holloway, J. Jesenovec, B. L. Dutton, M. D. Mccluskey, Larry E. Halliburton

Faculty Publications

Excerpt: Transition-metal ions (Ni, Cu, and Zn) in β-Ga₂O₃ crystals form deep acceptor levels in the lower half of the bandgap. In the present study, we characterize the Ni acceptors in a Czochralski-grown crystal and find that their (0/−) level is approximately 1.40 eV above the maximum of the valence band.

Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles

Mechanical Engineering ETDs

Lead zirconate titanate (PZT) has been a material of interest for sensor, actuator, and transducer applications in microelectromechanical systems (MEMS). This is due to their favorable piezoelectric, pyroelectric and ferroelectric properties. While various methods are available to deposit PZT thin films, radio frequency (RF) magnetron sputtering was selected to provide high quality PZT films with the added capability of batch processing. These sputter deposited PZT films were characterized to determine their internal film stress, Young’s modulus, composition, and structure. After characterization, the sputtered PZT samples were poled using corona poling and direct poling methods. As a means of comparison, commercially …

Sculpting Charge In Graphene Through Patterned Strain, Dylan J. Balter, Jenna Smith

The Journal of Purdue Undergraduate Research

No abstract provided.

Optimizing Switching Of Non-Linear Properties With Hyperbolic Metamaterials, James A. Ethridge, John G. Jones, Manuel R. Ferdinandus, Michael J. Havrilla, Michael A. Marciniak

Faculty Publications

Hyperbolic metamaterials have been demonstrated to have special potential in their linear response, but the extent of their non-linear response has not been extensively modeled or measured. In this work, novel non-linear behavior of an ITO/SiO₂ layered hyperbolic metamaterial is modeled and experimentally confirmed, specifically a change in the sign of the non-linear absorption with intensity. This behavior is tunable and can be achieved with a simple one-dimensional layered design. Fabrication was performed with physical vapor deposition, and measurements were conducted using the Z-scan technique. Potential applications include tunable optical switches, optical limiters, and tunable components of laser sources.

Oxygen Vacancies In Lib3O5 Crystals And Their Role In Nonlinear Absorption, Brian C. Holloway, Christopher A. Lenyk, Timothy D. Gustafson, Nancy C. Giles

Faculty Publications

LiB₃O₅ (LBO) crystals are used to generate the second, third, and fourth harmonics of near-infrared solid-state lasers. At high power levels, the material’s performance is adversely affected by nonlinear absorption. We show that as-grown crystals contain oxygen and lithium vacancies. Transient absorption bands are formed when these intrinsic defects serve as traps for “free” electrons and holes created by x rays or by three- and four-photon absorption processes. Trapped electrons introduce a band near 300 nm and trapped holes produce bands in the 500-600 nm region. Electron paramagnetic resonance (EPR) is used to identify and characterize the …

Sub-Bandgap Photon-Assisted Electron Trapping And Detrapping In Algan/Gan Heterostructure Field-Effect Transistors, Andrew Gunn

All Theses

We have investigated photon-assisted trapping and detrapping of electrons injected from the gate under negative bias in a heterostructure field-effect transistor (HFET). The electron injection rate from the gate was found to be dramatically affected by sub-bandgap laser illumination. The trapped electrons reduced the two-dimensional electron gas (2DEG) density at the AlGaN/GaN heterointerface but could also be emitted from their trap states by sub-bandgap photons, leading to a recovery of 2DEG density. The trapping and detrapping dynamics were found to be strongly dependent on the wavelength and focal position of the laser, as well as the gate bias stress time …

Etching Process Development For Sic Cmos, Weston Reed Renfrow

Graduate Theses and Dissertations

Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities that make it a helpful semiconductor in extreme environments where silicon devices fail. The development of a SiC CMOS is in its infancy. There are many improvements that need to be made to develop this technology further. Photolithography is the most significant bottleneck in the etching process; it was studied and improved upon. Etching SiC can be a challenge with its reinforced crystal structure. Chlorine-based inductively coupled plasma (ICP) etching of intrinsic SiC and doped SiC, SiO2, and Silicon has been studied. A baseline chlorine …

Study Of Single-Photon Wave-Packets With Atomically Thin Nonlinear Mirrors, Christopher Klenke

Graduate Theses and Dissertations

A novel controlled phase gate for photonic quantum computing is proposed by exploiting the powerful nonlinear optical responses of atomically thin transition metal dichalcogenides (TMDs) and it is shown that such a gate could elicit a π-rad phase shift in the outgoing electric field only in the case of two incident photons and no other cases. Firstly, the motivation for such a gate is developed and then the implementation of monolayer TMDs is presented as a solution to previous realization challenges. The single-mode case of incident photons upon a TMD is derived and is then used to constrain the more …