Semiconductor and Optical Materials Commons^™

Influence Of Tert-Butylpyridine On The Band Energetics Of Nanostructured Tio2 Electrodes And The Photoelectrochemical Properties Of Dye-Seneitized Electrodes, Shu-Ming Yang, Ji-Chao Wang, Hui-Zhi Kou, Hong-Bin Xue, Hong-Jun Wang, Yu-Ling Guo

Journal of Electrochemistry

The flat band edges (Efb) of nanostructured TiO₂ electrodes in electrolyte solutions with tert-butylpyridine (TBP) of different concentrations have been determined with spectroelectrochemical technique. TBP played a role in band energetics of nanostructured TiO₂ electrodes. The Efb values of -2.25, -2.46 and -2.62 V were determined in three 0.2 mol•L^-1 tetrabutylammonium perchlorate (TBAP) acetonitrile electrolytes which contain 0, 0.2 and 0.4 mol•L^-1 TBP respectively. The addition of Li+ ions shifted Efb positively. The Efb values of -1.12, -1.22 and -1.30 V were determined in three 0.2 mol•L^-1 LiClO₄ acetonitrile electrolytes which contain 0, 0.2 …

Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis

Faculty Publications

Previously developed methods used to grow Ge_1−ySn_y alloys on Si are extended to Sn concentrations in the 10¹⁹−10²⁰ cm⁻³ range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same …

Plasmonic Effect On The Photoluminescence Of Inas Quantum Dot Nanostructures, David Fryauf

Electrical Engineering Undergraduate Honors Theses

New materials for thin film photovoltaic applications are being explored worldwide, and one of the most popular new implementations is the introduction of an intermediate band gap in the semiconductor energy structure. Careful manipulation of semiconductor lattice material can form nanostructures such as quantum dots, which can be tuned to control specific intermediate energy levels. The introduction of an intermediate band in photovoltaic devices has a theoretical potential sunlight-toelectricity efficiency of roughly 63%. However, a specific material challenge of these thin film devices is limited absorption of long wavelengths of light. To increase absorption of the sun's visible spectrum, plasmonic …

Electromagnetic Modeling And Measurement Of Adaptive Metamaterial Structural Elements, Matthew E. Jussaume

Theses and Dissertations

This document addresses two major obstacles facing metamaterial development: uncertainty in the characterization of electromagnetic field behavior in metamaterial structures and the relatively small operational bandwidth of metamaterial structures. To address the first obstacle, a method of prediction aided measurement is developed and exploited to examine the field interactions within metamaterial devices. The fusion of simulation and measurement techniques enhances the understanding of the physical interactions of fields in the presence of metamaterials. To address the second obstacle, this document characterizes the effectiveness of an adaptive metamaterial design that incorporates a microelectromechanical systems (MEMS) variable capacitor. Applying voltages to the …

Electronically Enhanced Surface Diffusion During Ge Growth On Si(100), Ali Orguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on surface diffusion during the growth of Ge on Si(100) at 250 °C was studied. In situ reflection high-energy electron diffraction was used to measure the surface diffusion coefficient while ex situ atomic force microscopy was used to probe the structure and morphology of the grown quantum dots. The results show that laser excitation of the substrate increases the surface diffusion during the growth of Ge on Si(100), changes the growth morphology, improves the crystalline structure of the grown quantum dots, and decreases their size distribution. A purely electronic mechanism of enhanced surface …

Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana

UNLV Theses, Dissertations, Professional Papers, and Capstones

The interface formation between two different materials is important in applications for optoelectronic devices. Often, the success or performance of these devices is dependent on the formation of these heterojunctions. In this work, the surface and interfaces in such materials for optoelectronic devices are investigated by a suite of X-ray analytical techniques including X-ray photoelectron (XPS), X-ray excited Auger electron (XAES), and X-ray emission (XES) spectroscopies to provide novel insight.

For the group III-nitrides (e.g., AlxGa1-xN) used in many light emitting devices, a significant challenge exists to form an Ohmic contact. The electron affinities and band gaps of GaN and …

Photoelectrochemical Properties Of N, S, And Cl Modified Nano Tio2 Thin Films, Hong Yun, Chang-Jian Lin, Jing Li, Rong-Gui Du

Journal of Electrochemistry

The nitrogen(N),sulfur(S) and chlorine(Cl) modified nano TiO₂ thin films were prepared by adding Ti(O-n-Bu)₄ as the precursor into concentrated HNO₃,H₂SO₄ and HCl Solutions,respectively,on different substrates in a sol-gel process.The photoelectrochemical performances of N,S and Cl modified nano TiO₂ thin films have been studied by UV-vis(DRS),photocurrent curves,EIS and OCP-time curves.N-modified TiO₂ nano films show better surface structure,which helps to improve the quantum efficiency of nano TiO₂ thin films.

Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha

Faculty Publications

Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 µm for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 µm and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al₂O₃ anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond …

Feasibility Of Manipulating Correlated Color Temperatures With A Phosphor Converted High-Powered Light Emitting Diode White Light Source, Matthew Michael Little

Master's Theses

In this thesis we examine the feasibility of developing a white light source capable of producing colors between 2500 and 7500 Kelvin on the black-body radiator spectrum by simply adjusting amperage to a blue and ultraviolet (UV) light emitting diode (LED). The purpose of a lighting source of this nature is to better replicate daylight inside a building at a given time of day. This study analyzes the proposed light source using a 385 nm UV LED, a 457 nm blue LED, a 479 nm blue LED, a 562 nm peak cerium doped yttrium aluminum garnet (YAG:Ce) phosphor, and a …

Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu

Master's Theses

Gallium nitride (GaN) light emitting diodes (LED) embody a large field of research that aims to replace inefficient, conventional light sources with LEDs that have lower power, higher luminosity, and longer lifetime. This thesis presents an international collaboration effort between the State Key Laboratory for Mesoscopic Physics in Peking University (PKU) of Beijing, China and the Electrical Engineering Department of California Polytechnic State University, San Luis Obispo. Over the course of 2 years, Cal Poly’s side has simulated GaN LEDs within the pure blue wavelength spectrum (460nm), focusing specifically on the effects of reflection gratings, transmission gratings, top and bottom …

Optimization Of P3ht-Pcbm Polymer Solar Cells Through Device Simulation And Manufacturing, James Boom

Computer Engineering

Given a good model and implementation of that model, computer simulation can be used to reduce the time and material costs of research. To this end I worked with other students to manufacture, test and simulate the single layer P3HT-PCBM solar cell. Using the data collected from this project, future work can then be done with the project's simulator to further optimize these types of solar cell devices.

Production Of Multiwall Carbon Nanotuse For Alcohol Sensor Application., Ebtehal Saleh Alshaqaq

Student Works (2010-2019)

Multiwall carbon nanotube/polyethylene oxide (PEO), multiwall carbon nanoube/polyvinyl alcohol(PVA) and multiwall carbon nanotube/ polyvinyl alcohol(PVA)/zinc oxide(ZnO) have been tested as chemical sensors and detailed study on the effect of different gas concentration and material properties on gas sensitivity is presented. Initial composites were prepared by a simple solution casting and characterized by x-ray diffraction for ZnO, Fourier transform infra-red spectroscopy (FTIR) and scanning electron microscopy (SEM) to demonstrate crystallite size of ZnO, the morphology and surface area respectively. On the other hand, MWCNT/PEO , MWCNT/PVA , MWCNT/PVA/ZnO were prepared with different loading MWCNT and ZnO. The chemical sensing properties of …

Morphological, Structural, And Optical Studies Of Undoped And Doped-Zno Nanostructure., Ramin Yousefi

Student Works (2010-2019)

Research concerning one-dimensional nanomaterials has grown tremendously ever since carbon nanotubes were discovered by Iijima (1991), silicon nanowires were grown by Lieber's group (1998), and ZnO nanowires and nanobelts were found by Wang's group from Georgia Tech (Pan et al., 2001). Such researches on one-dimensional structures have been one of the most important branches of science during recent decades. We can now observe the impact of these studies on the technology of one-dimensional materials and also the advanced prospect of developing new technologies. Based on this motivation, this thesis attempts to investigate some unknown properties of ZnO nanostructures as …

Synthesis And Characterization Of A [Ru(Bpy)2(Ncs)2] Derivative For Use As A Dye-Sensitizer In Nanocrystalline Solar Cells, Joel Thomas Kirner

Honors Program Theses

After extensive review of the field of dye-sensitized solar cells, the molecule [Ru(4,4’- dicarboxy-2,2’-bipyridine)(4,4’-di-(2-(2-pyridyl)ethenyl)-2,2’-bipyridine)(NCS)2] has been designed as an original contribution to the field. This dye sensitizer was chosen by derivatizing upon the structure of the standard sensitizer, cis-diisothiocyanatobis(4,4’-dicarboxylic acid-2,2’- bipyridine)ruthenium(II) (N3), by extending the conjugation of one bipyridine ligand. This structural derivatization should enhance light harvesting by red-shifting the dye’s absorbance and increasing the dye’s molar absorptivity, which should result in a dye-sensitized solar cell with higher efficiency. The Density Functional Theory (DFT) molecular orbital calculations of the new dye complex indicate that the HOMO is highly localized …

Synthesis And Characterization Of Zinc Oxide Nanostructures., Khalifa Said Zahran Al-Azri

Student Works (2010-2019)

The growth mechanism, morphology, structure and optical properties of the ZnO nanostructures grown on bare and gold-coated silicon substrates using carbothermal reaction at atmospheric pressure were investigated under different growth conditions. The ZnO nanostructures formed were studied as a function of substrate location, furnace temperature, Ar gas flow rate, deposition time and ZnO powder to carbon powder mass ratio. The morphology and structure of the samples were characterized using the fieldemission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy(EDX) spectrum, x-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). It was found that in both silicon and gold-coated silicon …

The Thermoluminescence Properties Of Manganese Doped Zns Nanophosphor., Khalid Humaid Zahir Al-Hinai

Student Works (2010-2019)

The thermoluminescence (TL) properties of Manganese (Mn) doped ZnS nanophosphors were investigated after gamma irradiation at room temperature. The ZnS:Mn nanophosphors were prepared by chemical precipitation method by using Zinc sulfate, Sodium sulfide and Manganese sulfate. 1 mole, 2 moles and 3 moles of Manganese sulfate were used to have different concentrations of Mn in doped ZnS. The formation of the nanophosphors was characterized by high resolution scanning electron microscopy FESEM, XRD and EDX. The obtained products consist of particles with the dimension about 85–150nm. Comparison between ZnS nanophosphors and commercial ZnS powder glow curves was studied. It was observed …

Synthesis And Characterization Of Silicon Oxide And Silicon Carbide Nanostructures., Majid Salim Mohammed Al-Ruqieshi

Student Works (2010-2019)

Silicon oxide nanostructures have attracted extensive interests in recent years due to their physical and optical properties. SiOx nanostructures are synthesized by catalytic and non-catalytic approaches. With catalytic approach, long and uniform amorphous silicon oxide nanowires, nanofibers (comet and tree like), nanocakes and nanocages were synthesized on Si substrate by carbothermal evaporation reactions of TiO2 at high temperature. The SiOx nanowires were about 13 nm to 243 nm in diameters and 194 nm to several microns in length and the nanofibres with diameter between 8 nm to 30 nm and around 50 nm to 2.5μm in length. The diameter and …

Inductively Coupled Plasma Dry Etching Process On Planar Lightwave Circuit Fabrication., Chuah Khoon Seah

Student Works (2010-2019)

The main objective of this project is to master state-of-the-art techniques and knowledge in silica etching in order to achieve high quality waveguide circuit on Planar Lightwave Circuit devices. Another objective is to optimize the clean room research strength, surface characterization, microscopy techniques and similar semiconductor manufacturing processes.Initially, these processes were conducted with wet etching method that utilized diluted hydrofluoric acid (HF) and buffered oxide etch (BOE). Several problems arising such as mask peel-off, poor sidewall profile and defect waveguide channel during the pattern transfer process due to its’ isotropic nature. Alternatively, dry etching method was conducted via Inductively Coupled …

Giant Raman Enhancement On Nanoporous Gold Film By Conjugating With Nanoparticles For Single-Molecule Detection, Lihua Qian, Biswajit Das, Yan Li, Zhilin Yang

Electrical & Computer Engineering Faculty Research

Hot spots have the contradictively geometrical requirements for both the narrowest interstices to provide strong near-field coupling, and sufficient space to allow entrance of the analytes. Herein, a two-step method is employed to create hot spots within hybrid nanostructures, which consist of self-supported nanoporous gold films with the absorbed probes and subsequent nanoparticle conjugates without surface agents or mechanical motion. The molecules confined into 1 nm interstice exhibit 2.9 × 10⁷ times enhancement in Raman scattering compared to pure nanoporous gold. Giant enhancement primarily results from strong near-field coupling between nanopore and nanoparticle, which is theoretically confirmed by finite-difference …

Excitation-Induced Germanium Quantum Dot Formation On Si (100)-(2×1), Ali Oguz Er, Hani E. Elsayed-Ali

Physics Faculty Publications

The effect of nanosecond pulsed laser excitation on the self-assembly of Ge quantum dots grown by pulsed laser deposition on Si (100)-(2×1) was studied. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to probe the quantum dot structure and morphology. At room temperature, applying the excitation laser decreased the surface roughness of the grown Ge film. With surface electronic excitation, crystalline Ge quantum dots were formed at 250 °C, a temperature too low for their formation without excitation. At a substrate temperature of 390 °C, electronic excitation during growth was found to improve the …