Other Electrical and Computer Engineering Commons^™

Implementation Of A Si/Sic Hybrid Optically Controlled High-Power Switching Device, Prashant Bhadri, Kuntao Ye, Elena A. Guliants, Fred R. Beyette Jr.

Electrical and Computer Engineering Faculty Publications

The ever-increasing performance and economy of operation requirements placed on commercial and military transport aircraft are resulting in very complex systems. As a result, the use of fiber optic component technology has lead to high data throughput, immunity to EMI, reduced certification and maintenance costs and reduced weight features. In particular, in avionic systems, data integrity and high data rates are necessary for stable flight control. Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the EMI problem in avionic systems. Current fly-by-light systems are limited by …

Translation Of 'Balika Badhu: A Selected Anthology Of Bengali Short Stories', Monish Ranjan Chatterjee

Electrical and Computer Engineering Faculty Publications

This project, which began with the desire to render into English a rather long tale by Bimal Kar about five years ago, eventually grew into a considerably more extended compilation of Bengali short stories by 10 of the most well-known practitioners of that art since the heyday of Rabindranath Tagore. The collection is limited in many ways, not the least of which being that no woman writer has been included, and that it contains only a baker's dozen stories (if we count Bonophool's micro-stories collectively as one ) — a number pitifully small considering the vast and prolific field of …

A 0.5 Μm Thick Polysilicon Schottky Diode With Rectification Ratio Of 10^6, Elena A. Guliants, Chunhai Ji, Young J. Song, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

Polycrystalline Si films, 0.5-mm thick, were obtained as a result of metal-induced growth by sputtering from a Si target on 25 nm thick Ni prelayers at 525 °C. Silicon grew heteroepitaxially on the NiSi2 layer formed due to the reaction between the sputtered Si atoms and Ni. Schottky diodes were fabricated on the Si films by deposition of a Schottky metal on the front surface of the film while Ni disilicide provided an intimate ohmic contact at the back. A Pd/n-Si diode using an n-Si film annealed for 2 h at 700 °C in forming gas demonstrated a rectification ratio …

Self-Assembly Of Spatially Separated Silicon Structures By Si Heteroepitaxy On Ni Disilicide, Elena A. Guliants, Chunhai Ji, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

A nonlithographic approach to produce self-assembled spatially separated Si structures for nanoelectronic applications was developed, employing the metal-induced silicon growth. Densely packed Si whiskers, 500–800 nm thick and up to 2500 nm long, were obtained by magnetron sputtering of Si on a 25 nm thick Ni prelayer at 575 °C. The nucleation of the NiSi2 compound at the Ni–Si interface followed by the Si heteroepitaxy on the lattice-matched NiSi2 is suggested to be the driving force for the whisker formation.

Localization Of Carriers And Polarization Effects In Quaternary Alingan Multiple Quantum Wells, E. Kuokstis, J. Zhang, M.-Y. Ryu, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

We report on observing a long-wavelength band in low-temperature photoluminescence(PL)spectrum of quaternary Al_0.22In_0.02Ga_0.76N/Al_0.38In_0.01Ga_0.61N multiple quantum wells(MQWs), which were grown over sapphire substrates by a pulsed atomic-layer epitaxy technique. By comparing the excitation-power density and temperature dependence of the PLspectra of MQWs and bulk quaternary AlInGaN layers, we show this emission band to arise from the carrier and/or exciton localization at the quantum well interface disorders. PL data for other radiative transitions in MQWs indicate that excitation-dependent spectra position is determined by screening of the built-in electric field.

Ultraviolet Light-Emitting Diodes At 340 Nm Using Quaternary Alingan Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption.

Si3N4/Algan/Gan-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska

Faculty Publications

We report on a metal–insulator–semiconductor heterostructurefield-effect transistor (MISHFET) using Si₃N₄ film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si₃N₄ MISHFET, the gate voltage amplitude required for current collapse is much higher …

Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectriccharge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer.

Indium-Silicon Co-Doping Of High-Aluminum-Content Algan For Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×10¹⁷ cm⁻³ and the Hall mobility was up to 40 cm²/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrierphotodetectors with the cut-off wavelength of 278 nm.

Pulsed Atomic Layer Epitaxy Of Quaternary Alingan Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur

Faculty Publications

In this letter, we report on a material deposition scheme for quaternary Al_xIn_yGa_1−x–yN layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum,indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800 °C.

Feedback Correction Of Angular Error In Grating Readout, Monish Ranjan Chatterjee, Sundaram Ramachandran

Electrical and Computer Engineering Faculty Publications

Angular and wavelength READ beam errors in holographic interconnection systems are often a recurrent problem. Several strategies have been proposed to minimize or eliminate such READOUT misalignments.

Some years ago, Chatterjee and co-workers proposed a method involving READ beam wavelength tuning to correct output angular errors. In this paper, we investigate the possibility of using an acousto-optic (A-O) Bragg cell with optoelectronic feedback to dynamically correct the scattered beam for deviations in the incidence direction of the READ beam of a hologram. The concept here is based on an acoustic frequency feedback strategy used recently by Balakshy and Kazaryan for …

Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The low frequency noise in GaNfield effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10⁻³ to 3×10⁻³.Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures.

Overview Of Acousto-Optic Bistability, Chaos, And Logical Applications, Monish Ranjan Chatterjee, Erol Sonmez

Electrical and Computer Engineering Faculty Publications

An overview is presented of the key results in the field of acousto-optic bistability in the past two decades. It is shown that the basic acousto-optic bistable device may be described as a nonlinear dynamical system which satisfies a quadratic map. Thereafter, details are presented of several analytical methods, computer modeling approaches, including the SPICE circuit modeling technique, and experiments that have been used to understand the phenomenon.

Extensions to logical and digital applications are also discussed.

Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunctionfield-effect transistors(HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We …

Band-Edge Luminesce In Quaternary Alingan Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

Operation of InGaNmultiple-quantum-well(MQW)light-emitting diodes(LEDs) with quaternary AlInGaN barriers at room and elevated temperatures is reported. The devices outperform conventional GaN/InGaN MQWLEDs, especially at high pump currents. From the measurements of quantum efficiency and total emitted power under dc and pulsed pumping, we show the emission mechanism for quaternary barrier MQWs to be predominantly linked to band-to-band transitions. This is in contrast to localized state emission observed for conventional InGaN/InGaN and GaN/InGaN LEDs. The band-to-band recombination with an increased quantum-well depth improves the high-current performance of the quaternary barrier MQWLEDs, making them attractive for high-power solid-state lighting applications.

Study Of Dynamics And Mechanism Of Metal-Induced Silicon Growth, Elena A. Guliants, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

The present study addresses the mechanism of metal-induced growth of device-quality silicon thin films. Si deposition was performed by magnetron sputtering on a 25-nm-thick Ni prelayer at 525–625 °C and yielded a continuous, highly crystalline film with a columnar structure. A Ni disilicide intermediate layer formed as a result of the Ni reaction with Si deposit provides a sufficient site for the Si epitaxial growth because lattice mismatch is small between the two materials. The reaction between Ni and Si was observed to progress in several stages. The NixSiy phase evolution in a Ni:Si layer was studied by x-ray photoelectron …

High-Quality P-N Junctions With Quaternary Alingan/Ingan Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur

Faculty Publications

We report on quaternary AlInGaN/InGaN multiple quantum well(MQW)light emitting diode structures grown on sapphire substrates. The structures demonstrate high quality of the p–njunctions with quaternary MQW. At low forward bias (below 2 V), the temperature dependent of current–voltage characteristics are exponential with the ideality factor of 2.28, which is in a good agreement with the model of the injected carrier recombination in the space charge region. This ideality factor value is approximately three times lower than for conventional GaN/InGaN light emitting diodes(LEDs). The obtained data indicate the recombination in p–njunction space charge region to be responsible for a current transport …

Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The effect of the gate leakage current fluctuations on noiseproperties of AlGaN/GaN heterostructurefield effect transistors(HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductorheterostructurefield effect transistors (MOS-HFETs). The comparison of the noiseproperties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate currentnoise to the HFET’s output noise. The effect of the gate current fluctuations on output noiseproperties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10⁻³, even a …

Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

We report on the comparative photoluminescence studies of AlGaN/GaN, GaN/InGaN, and AlInGaN/InGaN multiple quantum well(MQW) structures. The study clearly shows the improvement in materials quality with the introduction of indium. Our results point out the localized state emission mechanism for GaN/InGaN structures and the quantum well emission mechanism for AlInGaN/InGaN structures. The introduction of indium is the dominant factor responsible for the observed differences in the photoluminescence spectra of these MQW structures.

High Electron Mobility In Algan/Gan Heterostructures Grown On Bulk Gan Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude

Faculty Publications

Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 cm²/V s for an electron sheet density of 2.4×10¹²cm⁻². Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The …

Optical Bandgap Formation In Alingan Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence,photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices.

Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur

Faculty Publications

We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO₂/AlGaNheterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 …

Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska

Faculty Publications

We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO₂ surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10⁻²³ A²/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.

Gan-Algan Heterostructure Field-Effect Transistors Over Bulk Gan Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu

Faculty Publications

We report on AlGaN/GaN heterostructures and heterostructurefield-effect transistors(HFETs) fabricated on high-pressure-grown bulk GaN substrates. The 2delectron gas channel exhibits excellent electronic properties with room-temperature electron Hall mobility as high as μ=1650 cm²/V s combined with a very large electron sheet density n_s≈1.4×10¹³ cm⁻².The HFET devices demonstrated better linearity of transconductance and low gate leakage, especially at elevated temperatures. We also present the comparative study of high-current AlGaN/GaN HFETs(n_sμ>2×10¹⁶ V⁻¹ s⁻¹) grown on bulk GaN, sapphire, and SiC substrates under the same conditions. We demonstrate that in …

Accumulation Hole Layer In P-Gan/Algan Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan

Faculty Publications

We present the results on piezoelectric and pyroelectricdoping in AlGaN-on-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structures with accumulation hole layer. Our results indicate that polarization charge can induce up to 5×10¹³ cm⁻² holes at the AlGaN/GaN heterointerfaces. We show that the transition from three-dimensional (3D) to two-dimensional (2D) hole gas can be only achieved for hole sheet densities on the order of 10¹³ cm⁻² or higher. At lower densities, only 3D-hole accumulation layer may exist. These results suggest that a piezoelectrically induced 2D-hole gas can be used for the reduction of the base spreading resistance …

Rotation-Invariant Synthetic Discriminant Function Filter For Pattern Recognition, Vahid R. Riasati, Partha P. Banerjee, Mustafa A. G. Abushagur, Kenneth B. Howell

Electrical and Computer Engineering Faculty Publications

The ring synthetic discriminant function (RSDF) filter for rotation-invariant response is discussed for pattern recognition. This method uses one half of a slice of the Fourier transform of the object to generate the transfer function of the filter. This is accomplished by rotating the one half of a slice in the Fourier domain through 2π rad about the zero-frequency point of the Fourier plane. This filter has the advantage of always matching at least one half of a slice of the Fourier transform of any rotation of the image. An analytical discussion of the filter construction and correlation results are …

Bulk Micromachining Of Silicon For Moems Prototype, Sung-Dong Suh

Doctoral Dissertations

In this dissertation, the optical application of silicon micromachining technology was investigated in order to create the three-dimensional microstructures that can be used as the components for the MOEMS prototype. These microstructures were designed and fabricated by utilizing corner compensation techniques and silicon bulk micromachining technologies. The fabricated microstructures are silicon mirror arrays that have a 1250 μm etch depth and through-holes across the OE-MCM substrate that has sixteen-fan-out OCDN on front side and a 1mm thickness.

Guided-wave OCDN on MCMs are designed and fabricated to meet the high-speed clocking requirements of next-generation digital systems through a realization of superior …

Kinetics Of Laser Chemical Vapor Deposition Of Carbon And Refractory Metals, Feng Gao

Doctoral Dissertations

Three-dimensional laser chemical vapor deposition (3D-LCVD) has been used to grow rods of carbon, tungsten, titanium, and hafnium from a variety of hydrocarbons and metal halide-based precursors. A novel computerized 3D-LCVD system was designed and successfully used in the experiments. A focused Nd:Yag laser beam (λ = 1.06 μm) was utilized to locally heat up a substrate to deposition temperature. The rods, which grew along the axis of the laser beam, had a typical diameter of 30–80 μm and a length of about 1 mm. The precursors for carbon deposition were the alkynes: propyne, butyne, pentyne, hexyne, and octyne. Propyne …

Cramer-Rao Bound And Optimal Amplitude Estimator Of Superimposed Sinusoidal Signals With Unknown Frequencies, Shaohui Jia

Doctoral Dissertations

This dissertation addresses optimally estimating the amplitudes of superimposed sinusoidal signals with unknown frequencies. The Cramer-Rao Bound of estimating the amplitudes in white Gaussian noise is given, and the maximum likelihood estimator of the amplitudes in this case is shown to be asymptotically efficient at high signal to noise ratio but finite sample size. Applying the theoretical results to signal resolutions, it is shown that the optimal resolution of multiple signals using a finite sample is given by the maximum likelihood estimator of the amplitudes of signals.

Design And Validation Of An Accurate Gps Signal And Receiver Truth Model For Comparing Advanced Receiver Processing Techniques, Phillip Martin Corbell

Theses and Dissertations

Recent increases in the computational power of computers and digital signal processors have made possible new, novel signal tracking techniques in GPS receivers. One such technique is known as Direct Correlators Output Processing (DCOP). This technique replaces individual traditional tracking loops with a single Kalman Filter, which jointly processes the received signals while exploiting their correlated noises. DCOP is innovative in its potential to replace the tried and true classical signal tracking loops. It is also an enabling technology for ultra-tightly coupled GPS/INS (Global Positioning System/Inertial Navigation System). Potential benefits of these new tracking techniques include an order-of-magnitude improvement in …