Other Electrical and Computer Engineering Commons^™

Adaptive Beam Director For A Tiled Fiber Array, Mikhail Vorontsov, Jim F. Riker, Ernst Polnau, Svetlana Lachinova, Venkata S. Rao Gudimetla

Electrical and Computer Engineering Faculty Publications

We present the concept development of a novel atmospheric compensation system based on adaptive tiled fiber array architecture operating with target-in-the-loop scenarios for directed beam applications. The adaptive tiled fiber array system is integrated with adaptive beam director (ABD). Wavefront control and sensing functions are performed directly on the beam director telescope primary mirror. The beam control of the adaptive tiled fiber array aims to compensate atmospheric turbulence-induced dynamic phase aberrations and results in a corresponding brightness increase on the illuminated extended object. The system is specifically designed for tiled fiber system architectures operating in strong intensity scintillation and speckle-modulation …

Designing A Microcontroller Training Platform For Active Distance Learning Engineering And Technology Students, Steve C. Hsiung, James E. Eiland, John R. Hackworth, John Ritz

Engineering Technology Faculty Publications

This is an active distance-learning project that addresses the hands-on microprocessor/ mi-crocontroller-related courses. A research team designed a low-cost training system with supporting instructional materials to assist the teaching of these concepts. Individual laboratory activities are being developed to reinforce student learning and skill development in programming concepts. This basic system format eventually will support an array of engineering and technology courses. This project involves two community colleges, Blue Ridge Community College (BRCC) and Olympic College (OC), and a four-year university, Old Dominion University (ODU), in a collaborative research team to design and develop a specific PIC microcontroller training system …

Real-Space Electron Transfer In Iii-Nitride Metal-Oxide-Semiconductor-Heterojunction Structures, S. Saygi, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan, J. Deng, R. Gaska, M. S. Shur

Faculty Publications

The real-space transfer effect in a SiO₂∕AlGaN∕GaN metal-oxide-semiconductor heterostructure (MOSH) from the two-dimensional (2D) electron gas at the heterointerface to the oxide-semiconductor interface has been demonstrated and explained. The effect occurs at high positive gate bias and manifests itself as an additional step in the capacitance-voltage (C‐V) characteristic. The real-space transfer effect limits the achievable maximum 2D electron gas density in the device channel. We show that in MOSH structures the maximum electron gas density exceeds up to two times that at the equilibrium (zero bias) condition. Correspondingly, a significant increase in the maximum channel current (up to …

Scene-Based Nonuniformity Correction Technique For Focal-Plane Arrays Using Readout Architecture, Balaji Narayanan, Russell C. Hardie, Robert A. Muse

Electrical and Computer Engineering Faculty Publications

Spatial fixed pattern noise is a common and major problem in modern infrared imagers due to the nonuniform response of the photodiodes in the focal plane array of the imaging system. In addition, the nonuniform response of the readout and the digitization electronics, involved in multiplexing the signals from the photodiodes, causes further nonuniformity. In this paper, we describe a novel scene based nonuniformity correction algorithm that treats the aggregate nonuniformity in separate stages. Firstly, the nonuniformity from the readout amplifiers is corrected using knowledge of the readout architecture of the imaging system. In the second stage, the nonuniformity resulting …

Signal Flow Analysis, Partha P. Banerjee

Electrical and Computer Engineering Faculty Publications

Signal flow graphs are a viable alternative to block diagrammatic representation of a system. What makes signal flow graphs attractive is that certain features from graph theory can be applied to the simplification and the synthesis of complex systems.

Functional Nanoparticles In Thin Films As Sensing Media, Elena A. Guliants, Ryan Schwarb, Hope Bearbower, James R. Gord, Christopher E. Bunker

Electrical and Computer Engineering Faculty Publications

The combination of unique properties offered by materials on the nanoscale with the increased role of surface chemistry in nanostructured solids makes core-shell nanoparticles extremely attractive for application to "smart" thin-film coatings. Sensing properties of nanoparticle-based thin films were studied in several systems containing organic-coated semiconductor and metallic particles. In semiconductors, the interaction of organic shell and/or thin-film "matrix" with the environment results in changes in the nanoparticle's surface states, altering the optical properties of the thin film. Measuring the electrical properties of thin films composed of metallic cores with hydrocarbon shells offers another mechanism to monitor the local environment …

Simulation Of Gate Lag And Current Collapse In Gallium Nitride Field-Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, M. S. Shur, M. Asif Khan, Grigory Simin

Faculty Publications

Results of two-dimensional numerical simulations of gate lag and current collapse in GaN heterostructurefield-effect transistors are presented. Simulation results clearly show that current collapse takes place only if an enhanced trapping occurs under the gate edges. Hot electrons play an instrumental role in the collapse mechanism. The simulation results also link the current collapse with electrons spreading into the buffer layer and confirm that a better electron localization (as in a double heterostructurefield-effect transistor) can dramatically reduce current collapse.

Establishing A Cyber Warrior Force, Scott D. Tobin

Theses and Dissertations

Cyber Warfare is widely touted to be the next generation of warfare. As America's reliance on automated systems and information technology increases, so too does the potential vulnerability to cyber attack. Nation and non-nation states are developing the capability to wage cyber warfare. Historically, the Air Force and DoD have concentrated their efforts toward defensive network operations. However, a shift in doctrine has shown both the Air Force and DoD acknowledging the potential for Information Warfare. What appears to be lacking is the trained and educated cyber warrior force that will carry out the information operations if needed. This research …

Volume Holographic Recording And Readout For 90-Deg Geometry, Partha P. Banerjee, Monish Ranjan Chatterjee, Nickolai Kukhtarev, Tatiana Kukhtareva

Electrical and Computer Engineering Faculty Publications

When a prerecorded cross-beam hologram is reconstructed (so-called edge-lit readout) with a uniform plane wave and a point source, the resulting exact solutions reveal Bessel-function-type diffracted beam profiles, which are fundamentally modified under weak propagational diffraction. The case of a profiled beam readout with propagational diffraction may be analyzed using a transfer function approach based on 2-D Laplace transforms. In a second series of investigations, dynamic readout from a cross-beam volume hologram recorded with two orthogonal uniform plane waves is considered for various dependences of the refractive index modulation with intensity. Typically, refractive index profiles that are proportional to the …

Map Estimation For Hyperspectral Image Resolution Enhancement Using An Auxiliary Sensor, Russell C. Hardie, Michael T. Eismann, Gregory L. Wilson

Electrical and Computer Engineering Faculty Publications

This paper presents a novel maximum a posteriori (MAP) estimator for enhancing the spatial resolution of an image using co-registered high spatial-resolution imagery from an auxiliary sensor. Here we focus on the use of high-resolution panchomatic data to enhance hyperspectral imagery. However, the estimation framework developed allows for any number of spectral bands in the primary and auxiliary image. The proposed technique is suitable for applications where some correlation, either localized or global, exists between the auxiliary image and the image being enhanced. To exploit localized correlations, a spatially varying statistical model, based on vector quantization, is used. Another important …

Volume Holographic Optical Elements, Ching-Cherng Sun, Partha P. Banerjee

Electrical and Computer Engineering Faculty Publications

The final two papers are concerned with the analysis of novel holograms. Banerjee et al. investigate holographic recording and reconstruction for edge-lit holograms recorded in a 90-degree geometry. Various cases of recording and readout that incorporate propagational diffraction have been modeled. It is shown that the 90-degree geometry can result in beam shaping, as evidenced through preliminary experimental results with photorefractive lithium niobate. Nguyen et al. propose a new approach for designing computer-generated holograms. An artificial neural network is used to initiate the genetic algorithm so that the high computation cost of genetic algorithms for synthesizing holograms is significantly reduced …

Simulation Of Hot Electron And Quantum Effects In Algan/Gan Heterostructure Field Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, H. Xu, M. S. Shur, M. Asif Khan, Grigory Simin, J. Yang

Faculty Publications

We report on simulations of electrical characteristics of AlGaN/(InGaN)/GaN heterostructurefield effect transistors with quantum and hot electroneffects taken into account. Polarization charges lead to quantum confinement of electrons in the channel and to the formation of two-dimensional electron gas. The electron quantization leads to the spread of the electronwave function into the barrier and bulk but does not have significant impact on dc electrical characteristics.Hot electrons play an important part in the charge transport by spilling over into the bulk GaN where they are captured by traps. This leads to negative differential conductivity, which is also observed experimentally. The simulation …

Parameter Extraction Software For Silicon Carbide Schottky, Merged Pin Schottky And Pin Power Diode Models, Edgar Cilio

Inquiry: The University of Arkansas Undergraduate Research Journal

A software program for on-state parameter extraction is presented for the realization of a high quality model for SiC Schottky, Merged PiN Schottky, and PiN Power diodes based on McNutt and Mantooth's Comprehensive SiC Diode model [ 1 ].

On The Empirical Balanced Truncation For Nonlinear Systems, Marissa Condon, Rossen Ivanov

Articles

Novel constructions of empirical controllability and observability gramians for nonlinear systems for subsequent use in a balanced truncation style of model reduction are proposed. The new gramians are based on a generalisation of the fundamental solution for a Linear Time-Varying system. Relationships between the given gramians for nonlinear systems and the standard gramians for both Linear Time-Invariant and Linear Time-Varying systems are established as well as relationships to prior constructions proposed for empirical gramians. Application of the new gramians is illustrated through a sample test-system.

Double-Scaled Potential Profile In A Group-Iii Nitride Alloy Revealed By Monte Carlo Simulation Of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

The temperature dependences of the peak position and width of the photoluminescence band in Al_0.1In_0.01Ga_0.89N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale.

Examination Of Focused Beam Propagation Through A Finite Non-Reciprocal Planar Chiral Slab Using Complex Fresnel Coefficients And Dual Transforms, Monish Ranjan Chatterjee, Sumit Nema, Partha P. Banerjee

Electrical and Computer Engineering Faculty Publications

Recently, uniform plane wave propagation across a nonchiral-chiral interface was examined via the development of appropriate Fresnel coefficients. In this extension, propagation of focused uniform and profiled beams through a finite, planar nonreciprocal chiral slab is investigated using complex Fresnel coefficients via angular plane wave decomposition and dual transforms.

Revisiting The Fresnel Coefficients For Uniform Plane Wave Propagation Across A Nonchiral, Reciprocal And Chiral, Nonreciprocal Interface, Monish Ranjan Chatterjee, Sumit Nema

Electrical and Computer Engineering Faculty Publications

The problem of EM wave propagation in non-reciprocal chiral media has been studied by several investigators. In a recent approach, a dual-transform technique has been developed to study the problem of such propagation under paraxial and slow-envelope variation conditions.

In this paper, we first outline some of the results obtained using the dual transform technique for arbitrary boundary conditions within the left boundary of a semi-infinite, non-reciprocal chiral medium for a uniform plane wave, and a fundamental Gaussian-profiled beam. Next, we explore the problem of a uniform EM wave incident at an oblique angle at an interface between a reciprocal, …

Time-Resolved Electroluminescence Of Algan-Based Light-Emitting Diodes With Emission At 285 Nm, M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, R. Gaska

Faculty Publications

We present a study on the time evolution of the electroluminescence(EL)spectra of AlGaN-based deep ultraviolet light-emitting diodes(LEDs) under pulsed current pumping. The ELspectra peaks at 285 nm and 330 nm are found to result from recombination involving band-to-band and free carriers to deep acceptor level transitions. The 330 nm long-wavelength transitions to deep acceptor levels in the p-AlGaN layer as well as the nonradiative processes significantly influence the LED internal quantum efficiency.

Digital Image Processing, Russell C. Hardie, Majeed M. Hayat

Electrical and Computer Engineering Faculty Publications

In recent years, digital images and digital image processing have become part of everyday life. This growth has been primarily fueled by advances in digital computers and the advent and growth of the Internet. Furthermore, commercially available digital cameras, scanners, and other equipment for acquiring, storing, and displaying digital imagery have become very inexpensive and increasingly powerful. An excellent treatment of digital images and digital image processing can be found in Ref. [1]. A digital image is simply a two-dimensional array of finite-precision numerical values called picture elements (or pixels). Thus a digital image is a spatially discrete (or discrete-space) …

Polarization Effects In Photoluminescence Of C- And M-Plane Gan/Algan Multiple Quantum Wells, E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, Grigory Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, B. Chai

Faculty Publications

Polarizationeffects have been studied in GaN/AlGaN multiple quantum wells(MQWs) with different c-axis orientation by means of excitation-dependent photoluminescence(PL) analysis. Quantum structures were grown on [0001]-oriented sapphire substrates (C plane) and single-crystalline [11̄00]-oriented freestanding GaN (M plane) using the metalorganic chemical vapor deposition technique. Strong PL spectrum line blueshifts (up to 140 meV) which are correlated with the excitation intensity have been obtained for C-plane MQWs, whereas no shift has been observed for M-plane MQWs.Theoretical calculations and comparison with the PL data confirm that the built-in electric field for C-plane structures is much stronger than the field present for M-plane MQWs. …

Gan Homoepitaxy On Freestanding (11̄00) Oriented Gan Substrates, C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, Grigory Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, Bruce Chai

Faculty Publications

We report homoepitaxialGaNgrowth on freestanding (11̄00) oriented (M-plane GaN) substrates using low-pressure metalorganic chemical vapor deposition.Scanning electron microscopy,atomic-force microscopy, and photoluminescence were used to study the influence of growth conditions such as the V/III molar ratio and temperature on the surface morphology and optical properties of the epilayers. Optimized growth conditions led to high quality (11̄00) oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Since for III-N materials the (11̄00) crystal orientation is free from piezoelectric or spontaneous polarization electric fields, …

Low-Temperature Operation Of Alfan Single-Quantum-Well Light-Emitting Diodes With Deep Ultraviolet Emission At 285 Nm, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan

Faculty Publications

We present a study of the electrical and optical characteristics of 285 nm emission deep ultraviolet light-emitting diodes(LED) at temperatures from 10 to 300 K. At low bias, our data show the tunneling carrier transport to be the dominant conduction mechanism. The room-temperature performance is shown to be limited mostly by poor electron confinement in the active region and a pronounced deep level assisted recombination but not by the hole injection into the active region. At temperatures below 100 K, the electroluminescence peak intensity increases by more than one order of magnitude indicating that with a proper device design and …

Near-Band-Edge Photoluminescence Of Wurtzite-Type Aln, E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur, C. Rojo, L. Schowalter

Faculty Publications

Temperature-dependentphotoluminescence(PL)measurements were performed for A-plane and C-plane bulk AlN single crystals and epitaxial layers on sapphire. A strong near-band-edge (NBE) emission and deep-level luminescence were observed. At low excitations, the emission spectra are dominated by free and bound excitonic transitions and their LO-phonon replicas. At high excitations, the broadening and redshift of the NBE band is attributed to dense electron–hole plasma formation. The PL spectra differences of bulk single crystals and epilayers is explained by the electron–hole plasma expansion peculiarities.

Nonresonant Detection Of Terahertz Radiation In Field Effect Transistors, W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, Grigory Simin, X. Hu, M. Asif Khan, C. A. Saylor, L. C. Brunel

Faculty Publications

We present an experimental and theoretical study of nonresonant detection of subterahertz radiation in GaAs/AlGaAs and GaN/AlGaN heterostructurefield effect transistors. The experiments were performed in a wide range of temperatures (8–300 K) and for frequencies ranging from 100 to 600 GHz. The photoresponse measured as a function of the gate voltage exhibited a maximum near the threshold voltage. The results were interpreted using a theoretical model that shows that the maximum in photoresponse can be explained by the combined effect of exponential decrease of the electron density and the gate leakage current.

Time-Resolved Photoluminescence Of Quaternary Alingan-Based Multiple Quantum Wells, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, G. G. Sim, P. W. Yu

Faculty Publications

Time-resolvedphotoluminescence(PL)dynamics has been studied in AlInGaN/AlInGaN multiple quantum wells(MQWs) grown by a pulsed metalorganic chemical vapor deposition (PMOCVD) procedure. The PL decay kinetics was found to be sensitive to the emission energy and temperature. The PL decay time increases with decreasing emission energy, which is a characteristic of localized carrier/exciton recombination due to alloy fluctuations. Its temperature dependence shows radiative recombination to be the dominant process at low temperatures, indicating a high quality of PMOCVD grown quaternary AlInGaN MQWs and establishing them as promising structures for the active region of deep ultraviolet light emitting diodes.

Luminescence Mechanisms In Quaternary AlXInYGa1-X-YN Materials, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan

Faculty Publications

Low-temperature photoluminescence investigations have been carried out in the quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by pulsedmetalorganic chemical-vapor deposition (PMOCVD). With increasing excitation power density, the emission peaks in both AlInGaN epilayers and MQWs show a strong blueshift and theirlinewidths increase. The luminescence of the samples grown by PMOCVD is attributed to recombination of carriers/excitons localized at band-tail states. We also demonstrate theluminescence properties of AlInGaN and AlGaN materials grown by a pulsed atomic-layerepitaxy and conventional MOCVD, respectively.

Crack-Free Thick Algan Grown On Sapphire Using Aln/Algan Superlattices For Strain Management, J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan

Faculty Publications

We report on an AlN/AlGaN superlattice approach to grow high-Al-content thick n⁺-AlGaNlayers over c-plane sapphire substrates. Insertion of a set of AlN/AlGaN superlattices is shown to significantly reduce the biaxial tensile strain, thereby resulting in 3-μm-thick, crack-free Al_0.2Ga_0.8N layers. These high-quality, low-sheet-resistive layers are of key importance to avoid current crowding in quaternary AlInGaN multiple-quantum-well deep-ultraviolet light-emitting diodes over sapphire substrates.

Comparision Of Measured Convection Velocities With Calcuulations Based On Electric Potential Model, Daniel E. Britton

Honors Capstone Projects and Theses

No abstract provided.

Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska

Faculty Publications

We present experimental and modeling results on the gate-length dependence of the maximum current that can be achieved in GaN-based heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs). Our results show that the factor limiting the maximum current in the HFETs is the forward gate leakage current. In the MOSHFETs, the gate leakage current is suppressed and the overflow of the two dimensional electron gas into the AlGaN barrier region becomes the most important factor limiting the maximum current. Therefore, the maximum current is substantially higher in MOSHFETs than in HFETs. The measured maximum current increases with a decrease in the gate …

Two Mechanisms Of Blueshift Of Edge Emission In Ingan-Based Epilayers And Multiple Quantum Wells, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

We present the results of a comparative photoluminescence(PL) study of GaN and InGaN-based epilayers, and InGaN/GaN multiple quantum wells(MQWs). Room-temperature PL spectra were measured for a very broad range of optical excitation from 10 mW/cm² up to 1 MW/cm². In contrast to GaN epilayers, all In-containing samples exhibited an excitation-induced blueshift of the peak emission. In addition, the blueshift of the emission in the InGaN epilayers with the same composition as the quantum well was significantly smaller. The comparison of the blueshift in the “bulk” InGaN and in the MQWs allowed us to separate two different mechanisms …