Electronic Devices and Semiconductor Manufacturing Commons^™

Five-Level Flying Capacitor Converter Used As A Static Compensator For Current Unbalances In Three-Phase Distribution Systems, Rafael Franceschi

Graduate Theses and Dissertations

This thesis presents and evaluates a solution for unbalanced current loading in three-phase distribution systems. The proposed solution uses the flying capacitor multilevel converter as its main topology for an application known as Unbalanced Current Static Compensator. The fundamental theory, controller design and prototype construction will be presented along with the experimental results. The Unbalanced Current Static Compensator main objective is the balancing of the up-stream currents from the installation point to eliminate the negative- and zero-sequence currents originated by unbalanced single-phase loads.

Three separate single-phase flying capacitor converters are controlled independently using a d-q rotating reference frame algorithm to …

Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao

Graduate Theses and Dissertations

The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability.

However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs …

A Silicon Germanium Cmos Linear Voltage Regulator For Wireless Agricultural Applications, Aminta Naidili Castillo Robles

Graduate Theses and Dissertations

This thesis presents the design, simulation and test results of a silicon germanium (SiGe) complementary metal-oxide-semiconductor (CMOS) linear regulator. The objective of the circuit is to power other analog devices regardless of the load current and input voltage changes. The application of this regulator is to be part of a project developing a miniaturized semiconductor platform that can be inserted into stems of crops in order to measure data inside the plant and then send it wirelessly to the user. The linear regulator was designed on a BiCMOS SiGe 0.13µm which is a GlobalFoundries process. It has been tested at …

Synchrophasor-Based Fault Location Detection And Classification, In Power Systems, Using Artificial Intelligence, Hemal Falak

Graduate Theses and Dissertations

With the introduction of sophisticated electronic gadgets which cannot sustain interruption in the provision of electricity, the need to supply uninterrupted and reliable power supply, to the consumers, has become a crucial factor in the present-day world. Therefore, it is customary to correctly identify fault locations in an electrical power network, in order to rectify faults and restore power supply in the minimum possible time. Many automated fault location detection algorithms have been proposed, however, prior art requires topological and physical information of the electrical power network. This thesis presents a new method of detecting fault locations, in transmission as …

Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant

Graduate Theses and Dissertations

The development of new materials for efficient optoelectronic devices from Group IV elements is the heart of Group IV photonics. This has direct ties to modern technology as the foundation for the electronics industry is silicon. This has driven the development of silicon-based optoelectronics using these other Group IV materials as silicon is a poor optical material due to its indirect band gap when compared to the III-V semiconductors that are used by most of the optoelectronics industry. While efforts have been made to integrate III-V materials onto silicon substrates, the incompatibility with the complementary metal oxide semiconductor process has …

Model Development And Assessment Of The Gate Network In A High-Performance Sic Power Module, William Austin Curbow

Graduate Theses and Dissertations

The main objective of this effort is to determine points of weakness in the gate network of a high-performance SiC power module and to offer remedies to these issues to increase the overall performance, robustness, and reliability of the technology. In order to accomplish this goal, a highly accurate model of the gate network is developed through three methods of parameter extraction: calculation, simulation, and measurement. A SPICE model of the gate network is developed to analyze four electrical issues in a high-speed, SiC-based power module including the necessary internal gate resistance for damping under-voltage and over-voltage transients, the disparity …

Exfoliation, Synthesis, And Characterization Of Nanoscale Te, Takayuki Hironaka

Graduate Theses and Dissertations

Since the experimental discovery of graphene, two dimensional materials have enjoyed more attention and emphasis in academic research than nanowires, but the latter are an important area of study for creating 1D materials, or single atom chains, the next generation materials for advancing electronic devices. Atomically thin layers can be generated from 2D materials with weak bonds in one direction, and by applying this concept to one dimensional weakly bonded materials, we hypothesize that single atom chains with atomic-scale diameters may be produced. Tellurium (Te) and selenium (Se) have lattices consisting of spiral chains oriented along the c-axis, and each …

Gesn Thin Film Epitaxy And Quantum Wells For Optoelectronic Devices, Perry Christian Grant

Graduate Theses and Dissertations

Group IV photonics is an effort to generate viable infrared optoelectronic devices using group IV materials. Si-based optoelectronics have received monumental research since Si is the heart of the electronics industry propelling our data driven world. Silicon however, is an indirect material whose optical characteristics are poor compared to other III-IV semiconductors that make up the optoelectronics industry. There have been major efforts to integrate III-V materials onto Si substrates. Great progress on the integration of these III-V materials has occurred but incompatibility with CMOS processing has presented great difficulty in this process becoming a viable and cost-effective solution. Germanium …

Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li

Graduate Theses and Dissertations

Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and super lattices (SLs) are expected to be promising alternatives to random InGaN alloys since in principle they can achieve the equivalent band gap of InGaN random alloys with arbitrarily high In-content and at the same time bypass many growth difficulties.

This dissertation focuses on studying the growth mechanisms, structural properties and energy structures of InN/GaN …

Fabrication And Characterization Of Electrochemical Glucose Sensors, Mohammed Marie

Graduate Theses and Dissertations

Electrochemical sensors based on the nanostructure of the semiconductor materials are of tremendous interest to be utilized for glucose monitoring. The sensors, based on the nanostructure of the semiconductor materials, are the third generations of the glucose sensors that are fast, sensitive, and cost-effect for glucose monitoring.

Glucose sensors based on pure zinc oxide nanorods (NRs) grown on different substrates, such ITO, FTO, and Si/SiO2/Au, were investigated in this research. Silicon nanowire (NW)- based glucose sensors were also studied. First, an enzyme-based glucose sensor was fabricated out of glass/ITO/ZnO NRs/BSA/GOx/nafion membrane. The sensor was tested amperometrically at different glucose concentrations. …

Stability Analysis Of A High-Power Microgrid, David Manuel Carballo Rojas

Graduate Theses and Dissertations

The objective of this thesis is to perform the modeling and stability analysis of a high-power microgrid with multiple parallel-and grid connected voltage source converters using the system parameters from the high-power microgrid testbed at the National Center for Reliable Electric Power Transmission (NCREPT) at the University of Arkansas in order to identify, minimize, if not eliminate, the potential instabilities that can affect the proper operation of the microgrid testbed. To achieve this objective, the mathematical modeling of the high-power microgrid considering the adverse effects of resonances due to interactions among the converter LCL output filters is presented and analyzed. …

Investigation Of A Gan-Based Power Supply Topology Utilizing Solid State Transformer For Low Power Applications, Akrem Mohamed Elrajoubi

Graduate Theses and Dissertations

Gallium nitride (GaN) power devices exhibit a much lower gate capacitance for a similar on-resistance than its silicon counterparts, making it highly desirable for high-frequency operation in switching converters, which leads to their significant benefits on power density, cost, and system volume. High-density switching converters are being realized with GaN power devices due to their high switching speeds that reduce the size of energy-storage circuit components. The purpose of this dissertation research is to investigate a new isolated GaN AC/DC switching converter based on solid-state transformer configuration with a totem-pole power factor corrector (PFC) front-end, a half-bridge series-resonant converter (SRC) …

Comparative Study Of Power Semiconductor Devices In A Multilevel Cascaded H-Bridge Inverter, Kenneth Mordi

Graduate Theses and Dissertations

This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET …

High-Sn-Content Gesn Alloy Towards Room-Temperature Mid Infrared Laser, Wei Dou

Graduate Theses and Dissertations

Si photonics is a rapidly expanding technology that integrates photonic circuits onto a Si substrate. The integration of Si electronics and photonics has been a successful technology for a wide range of applications. Group-IV alloy GeSn has drawn great attentions as a complementary metal–oxide–semiconductor compatible optoelectronic material for Si photonics. The devices based on GeSn alloy could be monolithically integrated into well-established and high-yield Si integrated circuits, which is favorable for chip-scale Si photonics featuring smaller size, lower cost, and higher reliability.

The relaxed GeSn with high material quality and high Sn composition is highly desirable to cover mid-infrared wavelength. …

Si-Based Germanium Tin Photodetectors For Short-Wave And Mid-Wave Infrared Detections, Thach Pham

Graduate Theses and Dissertations

The demand of light-weight and inexpensive imaging system working in the infrared range keeps increasing for the last decade, especially for civil applications. Although several group IV materials such as silicon and germanium are used to realize detectors in the visible and near infrared region, they are not the efficient approach for imaging system in the short-wave infrared detection range and beyond due to bandgap limit. On the other hand, this market is heavily relied upon mature technology from III-V and II-VI elements over years, which are costly to growth and incompatible with available Si complementary metal-oxide-semiconductor (CMOS) foundries. This …

Evaluation Of Terahertz Imaging For Breast Cancer Detection Using Image Morphing, Tanny Andrea Chavez Esparza

Graduate Theses and Dissertations

This thesis proposes the use of a mesh morphing algorithm for the quantitative evaluation of terahertz (THz) images. This work differs from traditional evaluation methods based on qualitative evaluation because it provides a fair and quantitative measurement of the THz imaging system's performance. The objective of the algorithm is to match the alignment, shape, and resolution of the THz and reference pathology images. Therefore, the proposed morphing method provides a pathology reference for a pixel-by-pixel evaluation of the region classification in the THz image. To achieve this, the morphing algorithm aligns the images using the Pearson's correlation coefficient and reshapes …

Glucose Level Estimation Based On Invasive Electrochemical, And Non-Invasive Optical Sensing Methods, Sanghamitra Mandal

Graduate Theses and Dissertations

The purpose of this research is to design and fabricate sensors for glucose detection using inexpensive approaches. My first research approach is the fabrication of an amperometric electrochemical glucose sensor, by exploiting the optical properties of semiconductors and structural properties of nanostructures, to enhance the sensor sensitivity and response time. Enzymatic electrochemical sensors are fabricated using two different mechanisms: (1) the low-temperature hydrothermal synthesis of zinc oxide nanorods, and (2) the rapid metal-assisted chemical etching of silicon (Si) to synthesize Si nanowires. The concept of gold nano-electrode ensembles is then employed to the sensors in order to boost the current …

Design, Fabrication, And Characterization Of Novel Optoelectronic Devices For Near-Infrared Detection, Ahmad Nusir

Graduate Theses and Dissertations

Investigating semiconductor materials and devices at the nanoscale has become crucial in order to maintain the exponential development in today’s technology. There is a critical need for making devices lower in power consumption and smaller in size. Nanoscale semiconductor materials provide a powerful platform for optoelectronic device engineers. They own interesting properties which include enhanced photoconductivity and size-tunable interband transitions.

In this research, different types of nanostructures were investigated for optoelectronic devices: nanocrystals, nanowires, and thin-films. First, lead selenide nanocrystals with narrow bandgap were synthesized, size-tailored, and functionalized with molecular ligands for the application of uncooled near-infrared photodetectors. The devices …

Design, Fabrication, And Characterization Of All-Inorganic Quantum Dot Light Emitting Diodes, Ramesh Vasan

Graduate Theses and Dissertations

Quantum dot light emitting diodes are investigated as a replacement to the existing organic light emitting diodes that are commonly used for thin film lighting and display applications. In this, all-inorganic quantum dot light emitting diodes with inorganic quantum dot emissive layer and inorganic charge transport layers are designed, fabricated, and characterized. Inorganic materials are more environmentally stable and can handle higher current densities than organic materials. The device consists of CdSe/ZnS alloyed core/shell quantum dots as the emissive layer and metal oxide charge transport layer. The charge transport in these devices is found to occur through resonant energy transfer …

Application Of Modular Multilevel Converters (Mmc) Using Phase-Shifted Pwm And Selective Harmonic Elimination In Distribution Systems, Thouhidul Islam

Graduate Theses and Dissertations

Reducing the size and weight of a power electric system is a prodigious challenge to researchers as the development of the latest technologies emerge in the field of electrical engineering. A similar urge is there to develop a light-weight mobile power substation (MPS) to use in the electric power distribution systems during emergency conditions. This thesis proposes a power electronics based solution using the modular multilevel converter (MMC) topology to design the MPS system. The market-available power semiconductor devices are analyzed and suitable devices are selected to design the system. The phase-shifted pulse width modulation (PS-PWM) and selective harmonic elimination …

The Development Of Novel Interconnection Technologies For 3d Packaging Of Wire Bondless Silicon Carbide Power Modules, Sayan Seal

Graduate Theses and Dissertations

This dissertation advances the cause for the 3D packaging and integration of silicon carbide power modules. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were investigated, and the concept for a novel SiC power module was discussed. This highly-integrated SiC power module was assessed for feasibility, with a focus on achieving ultralow parasitic inductances in the critical switching loops. This will enable higher switching frequencies, leading to …

Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi

Graduate Theses and Dissertations

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. …

Reduction In Recombination Current Density In Boron Doped Silicon Using Atomic Hydrogen, Matthew Garett Young

Graduate Theses and Dissertations

The solar industry has grown immensely in recent years and has reached a point where solar energy has now become inexpensive enough that it is starting to emerge as a mainstream electrical generation source. However, recent economic analysis has suggested that for solar to become a truly wide spread source of electricity, the costs still need to plummet by a factor of 8x. This demands new and innovative concepts to help lower such cost. In pursuit of this goal, this dissertation examines the use of atomic hydrogen to lessen the recombination current density in the boron doped region of n-type …

Development Of An Oxygen Saturation Monitoring System By Embedded Electronics, Manikandan Venkatesan Gomathy

Graduate Theses and Dissertations

Measuring Oxygenation of blood (SaO2) plays a vital role in patient’s health monitoring. This is often measured by pulse oximeter, which is standard measure during anesthesia, asthma, operative and post-operative recoveries. Despite all, monitoring Oxygen level is necessary for infants with respiratory problems, old people, and pregnant women and in other critical situations.

This paper discusses the process of calculating the level of oxygen in blood and heart-rate detection using a non-invasive photo plethysmography also called as pulsoximeter using the MSP430FG437 microcontroller (MCU). The probe uses infrared lights to measure and should be in physical contact with any peripheral points …

Modeling And Validation Of 4h-Sic Low Voltage Mosfets For Integrated Circuit Design, Shamim Ahmed

Graduate Theses and Dissertations

Silicon Carbide is a promising wide bandgap material and gradually becoming the first choice of semiconductor for high density and high efficiency power electronics in medium voltage range (500-1500V). SiC has also excellent thermal conductivity and the devices fabricated with the material can operate at high temperature (~ 400 ⁰C). Thus, a power electronic system built with SiC devices requires less cooling requirement and saves board space and cost. The high temperature applications of SiC material can also be extended to space exploration, oil and gas rigging, aerospace and geothermal energy systems for data acquisition, sensing and instrumentation and power …

Design And Test Of A Gate Driver With Variable Drive And Self-Test Capability Implemented In A Silicon Carbide Cmos Process, Matthew Barlow

Graduate Theses and Dissertations

Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace those of standard silicon (Si) parts. The improved physical characteristics allow for faster switching, lower on-resistance, and temperature performance. The capabilities unleashed by these devices allow for higher efficiency switch-mode converters as well as the advance of power electronics into new high-temperature regimes previously unimaginable with silicon devices. While SiC power devices have reached a relative level of maturity, recent work has pushed the temperature boundaries of control electronics further with silicon carbide integrated circuits.

The primary requirement to ensure rapid switching of power MOSFETs was a gate …

Investigation Of The Optical Properties Of Pbse/Pbx Nanocrystals For Photodetector Applications, Haley Ann Morris

Graduate Theses and Dissertations

Lead selenide and lead selenide/lead sulfide core/shell nanocrystals were investigated for use in near infrared photodetectors. A colloidal synthesis method was used for both the core and core/shell configurations. The lead sulfide shell was examined in order to mitigate oxidation of the nanoparticle surface. Absorbance and photoluminescence spectra were measured at room temperature and 77 K, respectively. Transmission electron microscopy images were also obtained to confirm crystallography and size. Bulk lead selenide was simulated in WIEN2k utilizing the linear-augmented plane wave method of solving density functional theory to better understand the electronic structure of PbSe. The crystal structure, electron density, …

Si-Based Germanium-Tin (Gesn) Emitters For Short-Wave Infrared Optoelectronics, Seyed Amir Ghetmiri

Graduate Theses and Dissertations

Conventional integrated electronics have reached a physical limit, and their efficiency has been influenced by the generated heat in the high-density electronic packages. Integrated photonic circuits based on the highly developed Si complementary-metal-oxide-semiconductor (CMOS) infrastructure was proposed as a viable solution; however, Si-based emitters are the most challenging component for the monolithic integrated photonic circuits. The indirect bandgap of silicon and germanium is a bottleneck for the further development of photonic and optoelectronic integrated circuits.

The Ge1-xSnx alloy, a group IV material system compatible with Si CMOS technology, was suggested as a desirable material that theoretically exhibits a direct bandgap …

Design, Fabrication And Measurement Of A Plasmonic Enhanced Terahertz Photoconductive Antenna, Nathan Matthias Burford

Graduate Theses and Dissertations

Generation of broadband terahertz (THz) pulses from ultrafast photoconductive antennas (PCAs) is an attractive method for THz spectroscopy and imaging. This provides a wide frequency bandwidth (0.1-4 THz) as well as the straightforward recovery of both the magnitude and phase of the transmitted and/or reflected signals. The achieved output THz power is low, approximately a few microwatts. This is due to the poor conversion of the femtosecond laser used as the optical pump to useable current inside the antenna semiconducting material. The majority of THz power comes from the photocarriers generated within ~ 100 nm distance from the antenna electrodes. …

Growth Of Gesn And Gepb Alloy Films Using Thermal Evaporator, Hakimah Alahmed

Graduate Theses and Dissertations

Silicon is the most important semiconductor material used in microelectronic devices. As the number of transistors keep doubling every 24 months (Moore’s law), transistors continue scaling down in size, electrical interconnect is reaching its limits to keep up with the scaling down rate in integrated circuits. These limitations are related to interconnect density and power consumption. Hence, replacing electrical interconnect with optical interconnect on the chip or between chips has the ability to overcome these limitations. However, silicon has poor light emitting efficiency, and other substitutes such as III-V materials are not suitable due to high cost, lattice mismatch, and …