Electronic Devices and Semiconductor Manufacturing Commons^™

Etching Process Development For Sic Cmos, Weston Reed Renfrow

Graduate Theses and Dissertations

Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities that make it a helpful semiconductor in extreme environments where silicon devices fail. The development of a SiC CMOS is in its infancy. There are many improvements that need to be made to develop this technology further. Photolithography is the most significant bottleneck in the etching process; it was studied and improved upon. Etching SiC can be a challenge with its reinforced crystal structure. Chlorine-based inductively coupled plasma (ICP) etching of intrinsic SiC and doped SiC, SiO2, and Silicon has been studied. A baseline chlorine …

An Accurate And Efficient Electro-Thermal Compact Model Of Sic Power Mosfet Including Third Quadrant Behavior, Arman Ur Rashid

Graduate Theses and Dissertations

Due to narrower bandgap and lower critical electric field, silicon (Si) power devices have reached their limit in terms of the maximum blocking voltage capability. Exploiting this limitation, wide bandgap devices, namely silicon carbide (SiC) and gallium nitride (GaN) devices, are increasingly encroaching on the lucrative power electronics market. Unlike GaN, SiC devices can exploit most of the established fabrication techniques of Si power devices. Having substrate of the same material, vertical device structures with higher breakdown capabilities are feasible in SiC, unlike their GaN counterpart. Also, the excellent thermal conductivity of SiC, compared to GaN and Si, let SiC …

Design Of A 350 Kw Silicon Carbide Based 3-Phase Inverter With Ultra-Low Parasitic Inductance, Matthew Feurtado

Graduate Theses and Dissertations

The objective of this thesis is to present a design for a low parasitic inductance, high power density 3-phase inverter using silicon-carbide power modules for traction application in the electric vehicles with a power rating of 350 kW. With the market share of electric vehicles continuing to grow, there is a great opportunity for wide bandgap semiconductors such as silicon carbide (SiC) to improve the efficiency and size of the motor drives in these applications. In order to accomplish this goal, careful design and selection of each component in the system for optimum performance from an electrical, mechanical, and thermal …

The Development Of Novel Interconnection Technologies For 3d Packaging Of Wire Bondless Silicon Carbide Power Modules, Sayan Seal

Graduate Theses and Dissertations

This dissertation advances the cause for the 3D packaging and integration of silicon carbide power modules. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were investigated, and the concept for a novel SiC power module was discussed. This highly-integrated SiC power module was assessed for feasibility, with a focus on achieving ultralow parasitic inductances in the critical switching loops. This will enable higher switching frequencies, leading to …

Design And Test Of A Gate Driver With Variable Drive And Self-Test Capability Implemented In A Silicon Carbide Cmos Process, Matthew Barlow

Graduate Theses and Dissertations

Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace those of standard silicon (Si) parts. The improved physical characteristics allow for faster switching, lower on-resistance, and temperature performance. The capabilities unleashed by these devices allow for higher efficiency switch-mode converters as well as the advance of power electronics into new high-temperature regimes previously unimaginable with silicon devices. While SiC power devices have reached a relative level of maturity, recent work has pushed the temperature boundaries of control electronics further with silicon carbide integrated circuits.

The primary requirement to ensure rapid switching of power MOSFETs was a gate …