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Articles 61 - 89 of 89
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Compact Modeling Of Sic Insulated Gate Bipolar Transistors, Sonia Perez
Compact Modeling Of Sic Insulated Gate Bipolar Transistors, Sonia Perez
Graduate Theses and Dissertations
This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog-A formats. Initially, the existing MAST model mobility equations were updated using recently referenced silicon carbide (SiC) data. The updated MAST model was then verified for each device tested. Specifically, the updated MAST model was verified for the following IGBT devices and operation temperatures: n-channel silicon at 25 ˚C and at 125 ˚C; n-channel SiC at 25 ˚C and at 175 ˚C; and p-channel SiC at 150 ˚C and at 250 ˚C. Verification was performed through capacitance, DC output …
Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks
Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks
Graduate Theses and Dissertations
The first-ever 1.7kV 8A SiC physics-based compact SPICE model is developed for behavior prediction, modeling and simulation of the GeneSiC “Super” Junction Transistor. The model implements Gummel-Poon based equations and adds a quasi-saturation collector series resistance representation from a 1.2 kV, 6 A SiC bipolar junction transistor model developed in Hangzhou, China. The model has been validated with the GA08JT17-247 device data representing both static and dynamic characteristics from GeneSiC. Parameter extraction was performed in IC-CAP and results include plots showing output characteristics, capacitance versus voltage (C-V), and switching characteristics for 25 °C, 125 °C, and 175 °C temperatures.
High Temperature Silicon Carbide Mixed-Signal Circuits For Integrated Control And Data Acquisition, Ashfaqur Rahman
High Temperature Silicon Carbide Mixed-Signal Circuits For Integrated Control And Data Acquisition, Ashfaqur Rahman
Graduate Theses and Dissertations
Wide bandgap semiconductor materials such as gallium nitride (GaN) and silicon carbide have grown in popularity as a substrate for power devices for high temperature and high voltage applications over the last two decades. Recent research has been focused on the design of integrated circuits for protection and control in these wide bandgap materials. The ICs developed in SiC and GaN can not only complement the power devices in high voltage and high frequency applications, but can also be used for standalone high temperature control and data acquisition circuitry.
This dissertation work aims to explore the possibilities in high temperature …
Design, Fabrication, And Measurement Of A Multiple-Input Multiple-Output (Mimo) Antenna For Mobile Communication, Christopher Charles Arnold
Design, Fabrication, And Measurement Of A Multiple-Input Multiple-Output (Mimo) Antenna For Mobile Communication, Christopher Charles Arnold
Graduate Theses and Dissertations
This thesis presents the design, fabrication and characterization of a multiband uniplanar MIMO antenna for hand-held mobile communication devices on LTE, WLAN, and WMAN networks. The antenna design methodology combined a variety of broadbanding techniques that resulted in a single-layer hybrid monopole antenna coupled to a meander line element and parasitic structures. The 115×55×1.54 mm antenna was fabricated using an FR4 composite material and occupies only a fractional volume within the size of an average cellular phone allowing ample space to integrate with existing hardware. Characterization of the MIMO antenna included input impedance, scattering parameters and radiation pattern cross sections …
Characterization Of Silicon Phosphorus Alloy For Device Applications, Larry C. Cousar
Characterization Of Silicon Phosphorus Alloy For Device Applications, Larry C. Cousar
Graduate Theses and Dissertations
A new material of highly-phosphorus doped silicon for device applications was characterized and analyzed for new material properties. Devices such as NMOS transistors and other CMOS compatible devices may benefit from new materials that reduce external resistances and increase drive currents.
Material characterization requires numerous techniques and technologies to determine electrical, optical, and physical characteristics. For this work, Hall measurement, X-ray Diffraction, Raman Spectroscopy, Photoluminescence Characterization, and Spectroscopic Ellipsometry were used to better understand this new material. The results may lead to new models for silicon phosphorus alloys.
Single-Walled Carbon Nanotube Arrays For High Frequency Applications, Asmaa Elkadi
Single-Walled Carbon Nanotube Arrays For High Frequency Applications, Asmaa Elkadi
Graduate Theses and Dissertations
This dissertation presents a thorough analysis of semiconducting Single-Walled Carbon Nanotube-based devices, followed by a test structure fabrication and measurements.
The analysis starts by developing an individual nanotube model, which is then generalized for many nanotubes and adding the parasitic elements. The parasitic elements appear when forming the device electrodes degrade the overall performance.
The continuum model of an individual nanotube is developed. A unique potential function is presented to effectively describe the electron distribution in the carbon nanotube subsequently facilitating solving Schrödinger's equation to obtain the energy levels, and to generalize the model for many nanotubes.
It is shown …
Environmental Reliability Of Thin Film Sealing On Thick Film Ltcc, Charles R. Bourland
Environmental Reliability Of Thin Film Sealing On Thick Film Ltcc, Charles R. Bourland
Graduate Theses and Dissertations
As electronic components and systems become more intricate and expand into new realms of use case scenarios, new materials systems must be explored. With new systems comes the balancing acts of cost and reliability. Presented here is a thesis that explores a new hybrid-electronics packaging system using low temperature co-fired ceramics, referred to as LTCC. An LTCC system was designed to explore the environmental reliability of numerous thick film LTCC features and parameters. A key element was to explore how a thin film metallization stack up used to cap or seal underlying thick film structures would decrease environmental susceptibility while …
Hand Pattern Recognition Using Smart Band, Theerth Raj Munusamy
Hand Pattern Recognition Using Smart Band, Theerth Raj Munusamy
Graduate Theses and Dissertations
The Importance of gesture recognition has widely spread around the world. Many research strategies have been proposed to study and recognize gestures, especially facial and hand gestures. Distinguishing and recognizing hand gestures is vital in hotspot fields such as bionic parts, powered exoskeleton, diagnosing muscle disorders, etc. Recognizing such gesture patterns can also create a stress-free and fancy user interface for mobile phones, gaming consoles and other such devices.
The objective is to design a simple yet efficient wearable hand gesture recognizing system. This thesis also shows that by taking both EMG and accelerometer data into account, can improve the …
Indirect Matrix Converter As Standard Power Electronic Interface, Andrés Escobar-Mejía
Indirect Matrix Converter As Standard Power Electronic Interface, Andrés Escobar-Mejía
Graduate Theses and Dissertations
The increase in the penetration levels of distributed generation in the modern power grid and its importance in future energy systems have accelerated the interest of developing new power electronic interfaces for the energy conversion process. The feasibility of applying the indirect matrix converter as the standard power electronic interface for applications with power ratings from several kW to few MW is addressed in this dissertation. Special attention is given to those applications where space dominates the power electronic requirements. The main motivation for using the indirect matrix converter is that eliminates the energy storage component in the way of …
Development Of Micro-Hall Devices For Current Sensing, Thomas White
Development Of Micro-Hall Devices For Current Sensing, Thomas White
Graduate Theses and Dissertations
In this work, micro-Hall devices were developed for the purpose of sensing current within a high temperature and high power environment. GaAs HEMT, InGaAs pHEMT, and GaN HEMT structures were studied. These structures were grown by molecular beam epitaxy. Processing techniques including photolithography, metallization, Si deposition, wet etching, and dry etching were studied. Electrical characterization measurements including low frequency noise, Hall effect, sensitivity, capacitance-voltage, and current-voltage were performed.
Electron mobility and sheet carrier density studies were performed for both the InGaAs pHEMT and GaAs HEMT structures. Results indicated the InGaAs pHEMT was superior and thus fabricated as the micro-Hall device. …
Gesn Devices For Short-Wave Infrared Optoelectronics, Benjamin Ryan Conley
Gesn Devices For Short-Wave Infrared Optoelectronics, Benjamin Ryan Conley
Graduate Theses and Dissertations
The electronics industry has a large silicon infrastructure for the manufacture of complementary-metal oxide semiconductor (CMOS) based electronics. The increasing density of Si based circuits has set a pace that is now pushing the physical limits of connectivity between devices over conventional wire based links. This has driven the increasing interest in Si based optoelectronics and to use the groundwork already established by the electronics industry for lower cost optical communications. The greatest limitation to this effort has been the incorporation of a Si based laser, which requires integration of a direct bandgap material within this CMOS process.
The Ge1-xSnx …
Design Of A High Performance Silicon Carbide Cmos Operational Amplifier, Shaila Amin Bhuyan
Design Of A High Performance Silicon Carbide Cmos Operational Amplifier, Shaila Amin Bhuyan
Graduate Theses and Dissertations
This thesis presents the design, simulation, layout and test results of a silicon carbide (SiC) CMOS two-stage operational amplifier (op amp) with NMOS input stage. The circuit has been designed to provide a stable open-loop voltage gain (60 dB), unity-gain bandwidth (around 5 MHz) and maintain a high CMRR and PSRR within a useful input common mode range over process corners and a wide temperature range (25 °C - 300 °C). Between the two stages a Miller compensation topology is placed to improve the phase margin (around 45°). Due to the comparatively high threshold voltage values of transistors in SiC, …
Design, Simulation And Implementation Of Three-Phase Bidirectional Dc-Dc Dual Active Bridge Converter Using Sic Mosfets, Tariq Aldawsari
Design, Simulation And Implementation Of Three-Phase Bidirectional Dc-Dc Dual Active Bridge Converter Using Sic Mosfets, Tariq Aldawsari
Graduate Theses and Dissertations
The use of SiC-based martials in fabricating power semiconductor devices has shown more interest than conventional silicon-based. Its promising abilities to improve the performance of power electronic systems made it a valuable choice in building high power DC-DC converters. This thesis presents the design and implementation of a three-phase bidirectional DC-DC Dual Active Bridge using SiC MOSFETs. The proposed circuit is first built in Matlab for simulation analysis. Then a phase shift modulation controller is designed in Simulink to test the simulation circuit. The controls are then integrated through an FPGA to test the prototype. Simulations and experimental results are …
Synthesis And Characterization Of Nanocrystals And Their Application For Photodetectors, Ahmad Nusir
Synthesis And Characterization Of Nanocrystals And Their Application For Photodetectors, Ahmad Nusir
Graduate Theses and Dissertations
Room temperature operation is considered one of the essential restrictions in the design of electronic devices. Photodetectors are unable to detect light efficiently at room temperature due to high dark currents. Semiconductor nanocrystals possess unique optical and electrical properties which make them ideal for fabricating uncooled photodetectors. In this project, nanocrystals were synthesized and implemented in devices that detect light at room temperature.
Nanocrystalline I-III-VI2 and II-VI semiconductors (CuInS2 and CdSe) were grown by a wet chemical method, and characterized using: optical absorption, photoluminescence, Raman scattering, and x-ray diffraction. The optical absorption and photoluminescence spectra of the nanocrystals were recorded …
High Temperature Ltcc Based Sic Double-Sided Cooling Power Electronic Module, Hao Zhang
High Temperature Ltcc Based Sic Double-Sided Cooling Power Electronic Module, Hao Zhang
Graduate Theses and Dissertations
This objective of this dissertation research is to investigate a module packaging technology for high temperature double-sided cooling power electronic module application. A high-temperature wire-bondless low-temperature co-fired ceramic (LTCC) based double-sided cooling power electronic module was designed, simulated and fabricated. In this module, the conventional copper base plate is removed to reduce the thermal resistance between the device junctions to the heat sink and to improve the reliability of the module by eliminating the large area solder joint between the power substrate and the copper base plate. A low-temperature co-fired ceramic (LTCC) substrate with cavities and vias is used as …
Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant
Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant
Graduate Theses and Dissertations
High efficiency optoelectronic devices rely on high quality materials making up the device structure. The scope of this thesis investigates the effectiveness of rapid thermal annealing (RTA) at improving the material quality of GaAsBi/GaAs heterostructures. During the fabrication of a device, the contacts of the device had the rapid thermal annealing process accomplished to produce ohmic contacts and this research explored if this annealing treatment degraded the quantum wells that made up the active region of a device. To investigate these effects, a system to measure the photoluminescence of the material system was constructed utilizing Fourier Transform Infrared Spectroscopy. The …
Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan
Zinc Oxide Nanorod Based Ultraviolet Detectors With Wheatstone Bridge Design, Arun Vasudevan
Graduate Theses and Dissertations
This research work, for the first time, investigated metal semiconductor-metal (MSM) zine oxide (ZnO) nanorod based ultra-violet (UV) detectors having a Wheatstone bridge design with a high
responsivity at room temperature and above, as well as a responsivity that was largely independent of the change in ambient conditions. The ZnO nanorods which acted as the sensing element of the detector were grown by a chemical growth technique. Studies were conducted to determine the effects on ZnO nanorod properties by varying the concentration of the chemicals used for the rod growth. These studies showed how the rod diameter and the deposition …
Design, Fabrication And Characterization Of Plasmonic Fishnet Structures For The Enhancement Of Absorption In Thin Film Solar Cells, Sayan Seal
Graduate Theses and Dissertations
Incorporating plasmonic structures into the back spacer layer of thin film solar cells (TFSCs) is an efficient way to improve their performance. The fishnet structure; which is a tunable, plasmonic light scatterer is used to enhance light absorption. Unlike other plasmonic particles that have been previously suggested, the fishnet is an electrically connected wire mesh and does not result in electric field localization, hence it results in greater absorption in the intrinsic Si layer. Unlike other designs, the fishnet structure is placed in the back spacer layer of the TFSC, so it does not block any incident light. There is …
Design And Fabrication Of Inverter And Rectifier Modules For Indirect Matrix Converter Applications, Saikishore Talakokkula
Design And Fabrication Of Inverter And Rectifier Modules For Indirect Matrix Converter Applications, Saikishore Talakokkula
Graduate Theses and Dissertations
In power converter applications, silicon carbide (SiC) power semiconductor devices are preferred over their silicon counterparts due to many advantages such as wide bandgap, high junction temperatures and low on-state resistance. The SiC devices provide reduced conduction and switching losses. Due to the above mentioned advantages the power conversion efficiency of SiC devices is better compared to that of silicon (Si) devices.
This thesis studies the implementation of 1200V/17A Normally-off SiC JFETs for an indirect matrix converter (IMC) application. A discussion on the parasitic inductance optimization is presented based on the electromagnetic simulation results extracted from the Ansoft Q3D extractor. …
High Voltage Direct Current Energy Transmission Using Modular Multilevel Converters, David Alejandro Guzman Pinzon
High Voltage Direct Current Energy Transmission Using Modular Multilevel Converters, David Alejandro Guzman Pinzon
Graduate Theses and Dissertations
This thesis focus on high voltage direct current (HVdc) energy transmission using modular multilevel converter (MMC) based terminals. It provides a brief comparison between different HVdc technologies, focusing on voltage source converters (HVdc-VSC) with the MMC-based terminal emerging as the topology of choice for ratings less than 1 GW. The controllers for a two-terminal HVdc-link are analyzed and Matlab/SimulinkTM simulation models are presented. The simplified models and full Matlab/SimulinkTM based model are used to select the gains for the MMC controllers. Simulation results carried out on the full model validated the proposed methodologies. A new control technique that …
Electrical Design Considerations And Packaging Of Power Electronic Modules, Shijie Wang
Electrical Design Considerations And Packaging Of Power Electronic Modules, Shijie Wang
Graduate Theses and Dissertations
A modern power electronic module can save significant energy usage in the power electronic systems by improving their switching efficiencies. One way to improve the efficiency of the power electronic module is to reduce its parasitic circuit elements. The purpose of this thesis is to investigate the mitigation of parasitic circuit elements in power electronic modules. General methods of mitigating parasitic inductances were analyzed by the Q3D Extractor and verified by the time-domain reflectometry (TDR) measurements. In most cases, the TDR measurement results closely matched those predicted by the Q3D Extractor. These methods were applied to design and analyze a …
Iii-V Bismide Optoelectronic Devices, Dongsheng Fan
Iii-V Bismide Optoelectronic Devices, Dongsheng Fan
Graduate Theses and Dissertations
This dissertation explores modeling, molecular beam epitaxy growth, and fabrication of III-V bismide optoelectronic devices, which are of great importance in modern applications of telecommunication, gas sensing, environment monitoring, etc. In the current room-temperature continuous-wave operational GaSb-based type-I InGaAsSb/AlGaInAsSb quantum well laser diodes in 3-4 um mid-wavelength range, the lasing wavelength and performance of the devices are limited due to the lack of hole confinement in the active regions. In this dissertation, a novel GaSb-based GaInAsSbBi material is proposed to replace the conventional InGaAsSb material in the quantum well region, which enables the laser diodes achieve up to 4 µm …
Device Characterization And Compact Modeling Of The Sige Hbt In Extreme Temperature Environments, Beth Olivia Woods
Device Characterization And Compact Modeling Of The Sige Hbt In Extreme Temperature Environments, Beth Olivia Woods
Graduate Theses and Dissertations
The silicon germanium heterojunction bipolar transistor, SiGe HBT, has very high frequency response but limited voltage range. Commercial communication applications in wireless and system integration have driven the development of the SiGe HBT. However, the device's excellent electrical performance goes beyond the commercial environment. The SiGe HBT performs exceptionally at low temperatures. The device DC current gain and AC small-signal gain significantly increase in the cryogenic temperature range. Applications at low temperatures with expansive temperature range specifications need an HBT compact model to accurately represent the device's performance.
In this work, a compact model referenced at 300K was developed to …
Topics On Light-Emitting-Diode Driver Research, Jaber Hasan
Topics On Light-Emitting-Diode Driver Research, Jaber Hasan
Graduate Theses and Dissertations
In this dissertation, light-emitting-diode (LED) drivers are investigated for efficiency issues related to driving Red-Green-Blue (RGB) pixels and multiple LED strings in parallel. A high-efficiency digitally controlled RGB LED driver was designed for driving a 3x3 RGB LED display panel. A multiplexer was used to sense the voltage drop across the current controllers. This driver maintained a minimum drive voltage across the RGB LED pixels required to keep it in regulation leading to a reduction of unwanted power losses in the RGB LED pixels by selecting the minimum drop across the current-controllers as the reference voltage of the digital controller. …
The Development And Packaging Of A High-Density, Three-Phase, Silicon Carbide (Sic) Motor Drive, Jared Hornberger
The Development And Packaging Of A High-Density, Three-Phase, Silicon Carbide (Sic) Motor Drive, Jared Hornberger
Graduate Theses and Dissertations
Technology advances within the power electronics field are resulting in systems characterized by higher operating efficiencies, reduced footprint, minimal form factor, and decreasing mass. In particular, these attributes and characteristics are being inserted into numerous consumer applications, such as light-emitting diode lighting, compact fluorescent lighting, smart phones, and tablet PCs, to industrial applications that include hybrid, electric, and plug-in electric vehicles and more electric aircraft. To achieve the increase in energy efficiency and significant reduction in size and mass of these systems, power semiconductor device manufacturers are developing silicon carbide (SiC) semiconductor technology.
In this dissertation, the author discusses the …
Delay Insensitive Ternary Logic Utilizing Cmos And Cntfet, Ravi Sankar Parameswaran Nair
Delay Insensitive Ternary Logic Utilizing Cmos And Cntfet, Ravi Sankar Parameswaran Nair
Graduate Theses and Dissertations
As digital circuit design continues to evolve due to progress of semiconductor processes well into the sub 100nm range, clocked architectures face limitations in a number of cases where clockless asynchronous architectures require substantially less power, generate less noise, and produce less electromagnetic interference (EMI). This dissertation develops the Delay Insensitive Ternary Logic (DITL) asynchronous design paradigm that combines the designs aspects of similar Dual-Rail asynchronous paradigms and Boolean logic to create a single wire per bit, three voltage signaling and logic scheme.
DITL is designed at the transistor level using multi-threshold CMOS and carbon nanotube (CNT) FETs to develop …
A Silicon Carbide Linear Voltage Regulator For High Temperature Applications, Javier Antonio Valle Mayorga
A Silicon Carbide Linear Voltage Regulator For High Temperature Applications, Javier Antonio Valle Mayorga
Graduate Theses and Dissertations
Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon's, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field.
This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option …
Fabrication Of Composite Nanomaterials For Thin Film Amorphous Silicon Solar Cells, Benjamin Seth Newton
Fabrication Of Composite Nanomaterials For Thin Film Amorphous Silicon Solar Cells, Benjamin Seth Newton
Graduate Theses and Dissertations
A material with the precise combination of amorphous silicon and polycrystalline silicon would be able to take advantage of the high absorption capabilities of amorphous silicon and the electron transport capabilities of polycrystalline silicon. Polycrystalline nanostructures in the form of wires can also take advantage of other properties of light absorption, trapping and scattering inherent in nanowire structures. These properties of high absorption and electron transport in one device would lead to advances in the search for highly efficient low cost solar cells and sensors. In this work a thin film material composed of an array of polycrystalline silicon nanostructures …
Modeling And Characterization Of P-Type Silicon Carbide Gate Turn Off Thyristors, Osama Shihadeh Saadeh
Modeling And Characterization Of P-Type Silicon Carbide Gate Turn Off Thyristors, Osama Shihadeh Saadeh
Graduate Theses and Dissertations
Silicon carbide (SiC) power semiconductor devices have emerged in the past decade as the most promising technology for next generation power electronic applications ranging for electric vehicles to grid-connected power routing and conversion interfaces. Several devices have been developed, and even some have been released commercially, including diodes, MOSFETs, JFETs, thyristors, gate turn-off thyristors, and IGBTs. The model development, characterization and experimental validation of SiC p-type Gate Turn-off Thyristors (GTO) is presented in this work. The GTO device in this work is being used as part of a SiC-based solid-state fault current limiter under development at the University of Arkansas' …