Electronic Devices and Semiconductor Manufacturing Commons^™

An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko

Electrical & Computer Engineering Faculty Publications

A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.

Electrical And Structural Properties Of P-N Junctions In Cw Laser Annealed Silicon, M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Phillipp

Electrical & Computer Engineering Faculty Publications

Depth profiles of the electrical quality of ion implanted and cw laser annealed p-n junctions in silicon are obtained for the first time by secondary ion mass spectroscopy. A comparison with the crystallographic properties of the surface and the junction as observed by Nomarski optical microscopy as well as cross-sectional and plan view transmission electron microscopy is made. Samples containing slip dislocations show better insulation and a lower reverse bias current across the p-n junction as compared to samples with a perfect surface in agreement with current-voltage characteristics. Small dislocation loops located at the junction are found to degrade the …

A Study Of Thin-Film Superconducting Junctions, William P. Korink

Electrical & Computer Engineering Theses & Dissertations

The information presented in this paper is the result of research conducted toward the development. of a reproducible thin-film superconducting junction. The results of this experimentation and the equipment and procedures used are provided.

A qualitative explanation is given for the theory used in the derivation of the volt-ampere characteristics of thin-film superconducting junctions of metal-insulator- metal construction. This explanation entails the electron flow through the insulating layer through the use of the Fermi-Dirac and density of states functions.

The theoretical investigation is based on the BCS Theory and results in volt-ampere characteristics that agree very well with published experimental …