Electronic Devices and Semiconductor Manufacturing Commons^™

Monte Carlo Simulation Analysis Of Electron Bombardment Of Gallium Nitride For Particle Detector Applications, James Gibson Bolitho

Electrical & Computer Engineering Theses & Dissertations

Gallium Nitride (GaN) is a relatively new and promising semiconductor material. It is finding its place in commercial applications such as transistors, light-emitting diodes, and in blue lasers. The large bandgap of GaN allows for very low canier densities and high breakdown voltages. This combination results in a greatly reduced background current and noise, and can withstand large applied voltages. In addition, GaN is sturdy and has strong mechanical properties. These are all ideal characteristics for application in high-energy particle detection.

In this thesis, the central goal is to assess the response of a GaN-based particle detector through numerical modeling. …

Self-Assembly Of Ge Quantum Dots On Si(100)- 2×1 By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Self-assembled Ge quantum dots are grown on Si(100)- 2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids. © 2005 American Institute of Physics. [DOI: 10.1063/1.1949285]