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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Theory Of Sic Schottky Barrier Conduction And Model Analysis For Diode Breakdown With And Without Screw Dislocations, Lifeng Zheng
Theory Of Sic Schottky Barrier Conduction And Model Analysis For Diode Breakdown With And Without Screw Dislocations, Lifeng Zheng
Electrical & Computer Engineering Theses & Dissertations
Silicon Carbide is a very promising candidate for applications in high-power, high-temperature, and high-radiation conditions under which conventional semiconductors cannot perform adequately. However, the SiC processing technology has not yet reached maturity. There is also limited knowledge of its physical and chemical characteristics, and its device behavior is not well understood. The aim of this thesis is to analyze two specific problems in the SiC area. The first issue involves the large discrepancy between experimental I - V characteristics of SiC Schottky diodes and their theoretical values. The observed data, especially at low voltages, is found to be orders of …
New Buffer Layers, Large Band Gap Ternary Compounds: Cualte², K. Benchouk, E. Benseddik, C. O. El Moctar, J. C. Bernède, S. Marsillac, J. Pouzet, A Khellil
New Buffer Layers, Large Band Gap Ternary Compounds: Cualte², K. Benchouk, E. Benseddik, C. O. El Moctar, J. C. Bernède, S. Marsillac, J. Pouzet, A Khellil
Electrical & Computer Engineering Faculty Publications
After deposition, by evaporation under vacuum, of Al/Cu/Te, multilayer structures, annealing at 673 K or more for half an hour, under argon flow, allows CuAlTe2 films crystallized in the chalcopyrite structure to be obtained. The optical and electrical properties are interpreted by introducing the influence of impurity foreign phases present in the films. The optical properties are sensitive to the small Al2O3 domains randomly distributed into the CuAlTe2 polycrystalline matrix. The optical band gap is slightly increased (2.35 eV) by the presence of alumina. The conductivity measurements show that a short circuit effect can be induced by a binary Cu2-xTe …