Electronic Devices and Semiconductor Manufacturing Commons^™

A Study Of Transconductance Degradation In Hemt Using A Self-Consistent Boltzmann-Poisson-Schrodinger Solver, Rahim Khoie

Electrical & Computer Engineering Faculty Research

A self-consistent Boltzmann-Poisson-Schrödinger Solver is used to study the transconductance degradation in high electron mobility transistor (HEMT), which has extensively been reported by both experimental [1]-[8] and computational [9]-[ 13] researchers. As the gate voltage of a HEMT device is increased, its transconductance increases until it reaches a peak value, beyond which, the transconductance is degraded rather sharply with further increase in applied gate bias. We previously reported a two-subband self-consistent Boltzmann-Poisson- Schrödinger Solver for HEMT. [14] We further incorporated an additional self-consistency by calculating field-dependent, energy-dependent intersubband and intrasubband scattering rates due to ionized impurities and polar optical phonons.[15] …

Two-Dimensional Drift-Diffusion Simulations Of Silicon Avalanche Shaper (Sas) Devices For High Power Applications, Hamid Jalali

Electrical & Computer Engineering Theses & Dissertations

Silicon Avalanche Shaper devices have been projected as being important components of an inexpensive, semiconductor-based technology for high power switching applications. The primary advantage of this technology is that it is based on Silicon material which is easy to fabricate and has a well established processing technology. Unlike other high power technologies, the SAS devices do not rely on external optical triggering which eliminates the need for lasers and related optical circuitry.

The SAS based high power switching technology has been pioneered and tested by a Russian group. Though preliminary results have been very encouraging, the device reliability and its …

A Self-Consistent Numerical Method For Simulation Of Quantum Transport In High Electron Mobility Transistor; Part 1: The Boltzmann-Poisson-Schrodinger Solver, Rahim Khoie

Electrical & Computer Engineering Faculty Research

A self-consistent Boltzmann-Poisson-Schrödinger solver for High Electron Mobility Transistor is presented. The quantization of electrons in the quantum well normal to the heterojunction is taken into account by solving the two higher moments of Boltzmann equation along with the Schrödinger and Poisson equations, self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an energy balance equation are solved to obtain the transient and steady-state transport behavior. The numerical instability problems associated with the simulator are presented, and the criteria for smooth convergence of the solutions are discussed. The current-voltage characteristics, transconductance, gate capacitance, and unity-gain …

Analysis And Development Of A Switched Capacitor Power Supply, John Richard Hackworth

Electrical & Computer Engineering Theses & Dissertations

The combination of a switched capacitor network and switching power supply techniques can result in a transformer less regulated DC power supply that is small, relatively simple, and efficient. In addition, the output of such a system could be operated over a wide range of common mode voltages. Multiple switched capacitor supplies could be stacked to achieve voltage multiplication.

Although the output of a system of this type is a continuous function, the internal operation must be analyzed in finite time elements. This numerical analysis will be shown in both a mathematical approach and a computer model.