Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Institution
-
- University of Arkansas, Fayetteville (35)
- Old Dominion University (28)
- Air Force Institute of Technology (17)
- University of New Mexico (11)
- Virginia Commonwealth University (11)
-
- California Polytechnic State University, San Luis Obispo (10)
- University of Kentucky (8)
- University of Malaya (7)
- University of Nevada, Las Vegas (7)
- Clemson University (4)
- City University of New York (CUNY) (3)
- Louisiana State University (3)
- New Jersey Institute of Technology (3)
- Purdue University (3)
- University at Albany, State University of New York (3)
- University of Nebraska - Lincoln (3)
- Southern Methodist University (2)
- University of Louisville (2)
- West Virginia University (2)
- Arcadia University (1)
- Binghamton University (1)
- Chapman University (1)
- Chulalongkorn University (1)
- Georgia Southern University (1)
- Illinois Math and Science Academy (1)
- Kennesaw State University (1)
- Linfield University (1)
- Michigan Technological University (1)
- Missouri State University (1)
- Portland State University (1)
- Keyword
-
- Semiconductors (10)
- GaN (7)
- Semiconductor switches (7)
- Thin films (7)
- Applied sciences (6)
-
- Molecular beam epitaxy (6)
- Semiconductor (6)
- Silicon (6)
- Atomic force microscopy (5)
- Gallium arsenide (5)
- Annealing (4)
- Etching (4)
- Graphene (4)
- III-V semiconductors (4)
- Optoelectronics (4)
- Photoluminescence (4)
- Pulsed laser deposition (4)
- Silicon carbide (4)
- Electronic mechanisms (3)
- Gallium arsenide semiconductors (3)
- Gallium nitride (3)
- GeSn (3)
- HEMT (3)
- Laser (3)
- Light guides (3)
- Nanorods (3)
- Nanosecond pulsed laser (3)
- Nanostructured materials (3)
- Photoconductivity (3)
- Quantum dot (3)
- Publication Year
- Publication
-
- Graduate Theses and Dissertations (28)
- Electrical & Computer Engineering Faculty Publications (13)
- Electrical & Computer Engineering Theses & Dissertations (13)
- Theses and Dissertations (13)
- AFIT Patents (8)
-
- Master's Theses (8)
- Electrical & Computer Engineering Faculty Research (6)
- Optical Science and Engineering ETDs (5)
- Electrical and Computer Engineering Publications (4)
- All Dissertations (3)
- Electrical and Computer Engineering ETDs (3)
- Electronic Theses & Dissertations (2024 - present) (3)
- Faculty Publications (3)
- LSU Doctoral Dissertations (3)
- Student Works (2020-2029) (3)
- The Summer Undergraduate Research Fellowship (SURF) Symposium (3)
- Theses and Dissertations--Chemical and Materials Engineering (3)
- Theses and Dissertations--Electrical and Computer Engineering (3)
- Advanced Science Research Center (2)
- Dissertations (2)
- Electrical Engineering Theses and Dissertations (2)
- Electronic Theses and Dissertations (2)
- Graduate Theses, Dissertations, and Problem Reports (ETD) (2)
- Materials Engineering (2)
- Mechanical Engineering ETDs (2)
- Physics Faculty Publications (2)
- Student Works (2000-2009) (2)
- Student Works (2010-2019) (2)
- All Theses (1)
- Biological and Agricultural Engineering Undergraduate Honors Theses (1)
- Publication Type
Articles 31 - 60 of 179
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Method Of Evanescently Coupling Whispering Gallery Mode Optical Resonators Using Liquids, Hengky Chandrahalim, Kyle T. Bodily
Method Of Evanescently Coupling Whispering Gallery Mode Optical Resonators Using Liquids, Hengky Chandrahalim, Kyle T. Bodily
AFIT Patents
The present invention relates to evanescently coupling whispering gallery mode optical resonators having a liquid coupling as well as methods of making and using same. The aforementioned evanescently coupling whispering gallery mode optical resonators having a liquid couplings provide increased tunability and sensing selectivity over current same. The aforementioned. Applicants’ method of making evanescent-wave coupled optical resonators can be achieved while having coupling gap dimensions that can be fabricated using standard photolithography. Thus economic, rapid, and mass production of coupled WGM resonators-based lasers, sensors, and signal processors for a broad range of applications can be realized.
Machine Learning Based Prediction Models For Silicon Heterojunction Solar Cell Optimization, Rahul Jaiswal
Machine Learning Based Prediction Models For Silicon Heterojunction Solar Cell Optimization, Rahul Jaiswal
Electrical and Computer Engineering ETDs
Silicon heterojunction solar cell of Heterojunction with Thin Intrinsic Layer (HIT) structure is a commercially available technology, and its market share will significantly increase by the next decade. With such a significant market share, any minor improvement in the device’s overall efficiency can be beneficial three folds - customer return on investment, industry revenue, and the overall carbon footprint (from manufacturing to recycling/ disposing of the device). Conventionally, device optimization for solar cells has been achieved using a hit & trial approach where multiple experiments are done to evaluate the best process conditions and device parameters. This approach has some …
Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers
Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers
Physics Undergraduate Honors Theses
Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …
Iii-Nitride Triangular Microcantilevers For Multimodal Sensing Applications, Balaadithya Uppalapati
Iii-Nitride Triangular Microcantilevers For Multimodal Sensing Applications, Balaadithya Uppalapati
All Dissertations
Micro-electromechanical systems (MEMS)-based sensors have gained significant attention due to their ability to sense, measure, and process various physical, chemical, and biological parameters. The small size of MEMS sensors provides numerous advantages, including low power consumption, high sensitivity, and rapid response time, making them suitable for various applications in healthcare, automotive, aerospace, and consumer electronics.
In the past few years, AlGaN/GaN MEMS devices have been found to offer several advantages over silicon-based MEMS devices. One of the main advantages of AlGaN/GaN MEMS is their high sensitivity to surface stresses and forces due to their high piezoelectric coefficients. This sensitivity allows …
High Energy Blue Light Induces Oxidative Stress And Retinal Cell Apoptosis, Jessica Malinsky
High Energy Blue Light Induces Oxidative Stress And Retinal Cell Apoptosis, Jessica Malinsky
Capstone Showcase
Blue light (BL) is a high energy, short wavelength spanning 400 to 500 nm. Found in technological and environmental forms, BL has been shown to induce photochemical damage of the retina by reactive oxygen species (ROS) production. Excess ROS leads to oxidative stress, which disrupts retinal mitochondrial structure and function. As mitochondria amply occupy photoreceptors, they also contribute to oxidative stress due to their selectively significant absorption of BL at 400 to 500 nm. ROS generation that induces oxidative stress subsequently promotes retinal mitochondrial apoptosis. BL filtering and preventative mechanisms have been suggested to improve or repair BL-induced retinal damage, …
Surface Properties, Work Function, And Thermionic Electron Emission Characterization Of Materials For Next-Generation Dispenser Cathodes, Antonio Mantica
Surface Properties, Work Function, And Thermionic Electron Emission Characterization Of Materials For Next-Generation Dispenser Cathodes, Antonio Mantica
Theses and Dissertations--Chemical and Materials Engineering
A dispenser cathode’s ability to thermionically emit electrons is highly dependent on its material properties, especially those of the surface. Understanding the relationship between surface properties and electron emission, therefore, is vital to reach the next generation of the many vacuum electron devices (VEDs) that rely on the physics of electron emission. In the past century, many techniques have been developed to characterize material surfaces and quantify thermionic emission. These techniques are based on a wide range of different physical phenomena, including measuring photoemission via the photoelectric effect, measuring the electrostatic potential between metals in electrical contact, and current collection …
Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula
Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula
Dissertations
Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …
Void-Semiconductor Gaas Photonic Crystal Surface-Emitting Lasers By Epitaxial Regrowth And Single-Epitaxy Methods, Kevin James Reilly
Void-Semiconductor Gaas Photonic Crystal Surface-Emitting Lasers By Epitaxial Regrowth And Single-Epitaxy Methods, Kevin James Reilly
Nanoscience and Microsystems ETDs
Monolithic semiconductor lasers including edge-emitting lasers (EELs) and vertical-cavity surface-emitting lasers (VCSELs) fail to realize simultaneous achievement of both high-power high-quality beams due to intrinsic limitations of their resonant cavity. Photonic crystal surface emitting lasers (PCSELs) address these structural limitations through employment of a two-dimensional photonic crystal (PC) cavity that creates feedback at a single wavelength for laterally scalable devices. This function of the PC allows PCSELs to power scale with area while maintaining single-mode emission required for diffraction-limited beams. In this way, PCSELs fulfill an industry demand for high-power high-quality lasing from a single chip.
Early PCSELs were fabricated …
Enhancing The Performance Of Poly(3-Hexylthiophene) Based Organic Thin-Film Transistors Using An Interface Engineering Method, Eyob Negussie Tarekegn
Enhancing The Performance Of Poly(3-Hexylthiophene) Based Organic Thin-Film Transistors Using An Interface Engineering Method, Eyob Negussie Tarekegn
All Dissertations
An original design and photolithographic fabrication process for poly(3-hexylthiophene-2, 5-diyl) (P3HT) based organic thin-film transistors (OTFTs) is presented. The structure of the transistors was based on the bottom gate bottom contact OTFT. The fabrication process was efficient, cost-effective, and relatively straightforward to implement. Current–voltage (I-V) measurements were performed to characterize the primary electronic properties of the transistors. The measured mobility of these transistors was significantly higher than most results reported in the literature for other similar bottom gate bottom contact P3HT OTFTs. The higher mobility is explained primarily by the effectiveness of the fabrication process in keeping the interfacial layers …
Transition-Metal Ions In Β-Ga2O3 Crystals: Identification Of Ni Acceptors, Timothy D. Gustafson, Nancy C. Giles, Brian C. Holloway, J. Jesenovec, B. L. Dutton, M. D. Mccluskey, Larry E. Halliburton
Transition-Metal Ions In Β-Ga2O3 Crystals: Identification Of Ni Acceptors, Timothy D. Gustafson, Nancy C. Giles, Brian C. Holloway, J. Jesenovec, B. L. Dutton, M. D. Mccluskey, Larry E. Halliburton
Faculty Publications
Excerpt: Transition-metal ions (Ni, Cu, and Zn) in β-Ga2O3 crystals form deep acceptor levels in the lower half of the bandgap. In the present study, we characterize the Ni acceptors in a Czochralski-grown crystal and find that their (0/−) level is approximately 1.40 eV above the maximum of the valence band.
Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles
Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles
Mechanical Engineering ETDs
Lead zirconate titanate (PZT) has been a material of interest for sensor, actuator, and transducer applications in microelectromechanical systems (MEMS). This is due to their favorable piezoelectric, pyroelectric and ferroelectric properties. While various methods are available to deposit PZT thin films, radio frequency (RF) magnetron sputtering was selected to provide high quality PZT films with the added capability of batch processing. These sputter deposited PZT films were characterized to determine their internal film stress, Young’s modulus, composition, and structure. After characterization, the sputtered PZT samples were poled using corona poling and direct poling methods. As a means of comparison, commercially …
Sub-Bandgap Photon-Assisted Electron Trapping And Detrapping In Algan/Gan Heterostructure Field-Effect Transistors, Andrew Gunn
Sub-Bandgap Photon-Assisted Electron Trapping And Detrapping In Algan/Gan Heterostructure Field-Effect Transistors, Andrew Gunn
All Theses
We have investigated photon-assisted trapping and detrapping of electrons injected from the gate under negative bias in a heterostructure field-effect transistor (HFET). The electron injection rate from the gate was found to be dramatically affected by sub-bandgap laser illumination. The trapped electrons reduced the two-dimensional electron gas (2DEG) density at the AlGaN/GaN heterointerface but could also be emitted from their trap states by sub-bandgap photons, leading to a recovery of 2DEG density. The trapping and detrapping dynamics were found to be strongly dependent on the wavelength and focal position of the laser, as well as the gate bias stress time …
Etching Process Development For Sic Cmos, Weston Reed Renfrow
Etching Process Development For Sic Cmos, Weston Reed Renfrow
Graduate Theses and Dissertations
Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities that make it a helpful semiconductor in extreme environments where silicon devices fail. The development of a SiC CMOS is in its infancy. There are many improvements that need to be made to develop this technology further. Photolithography is the most significant bottleneck in the etching process; it was studied and improved upon. Etching SiC can be a challenge with its reinforced crystal structure. Chlorine-based inductively coupled plasma (ICP) etching of intrinsic SiC and doped SiC, SiO2, and Silicon has been studied. A baseline chlorine …
Study Of Thin Gan/Ingan/Gan Double Graded Structures For Future Photovoltaic Application, Mirsaeid Sarollahi
Study Of Thin Gan/Ingan/Gan Double Graded Structures For Future Photovoltaic Application, Mirsaeid Sarollahi
Graduate Theses and Dissertations
Indium gallium nitride (In_x Ga_(1-x) N) materials have displayed great potential for photovoltaic and optoelectronic devices due to their optical and electrical properties. Properties such as direct bandgap, strong bandgap absorption, thermal stability and high radiation resistance qualify them as great materials for photovoltaic devices. The tunable bandgap which absorbs the whole solar spectrum is the most significant feature which became attractive for scientists. The bandgap for these materials varies from 0.7 eV for InN to 3.4 eV for GaN covering from infrared to ultraviolet. In_x Ga_(1-x) N wurtzite crystal is grown on GaN buffer layer by Molecular Beam Epitaxy …
Noncontact Liquid Crystalline Broadband Optoacoustic Sensors, Hengky Chandrahalim, Michael T. Dela Cruz
Noncontact Liquid Crystalline Broadband Optoacoustic Sensors, Hengky Chandrahalim, Michael T. Dela Cruz
AFIT Patents
An optoacoustic sensor includes a liquid crystal (LC) cell formed between top and bottom plates of transparent material. A transverse grating formed across the LC cell that forms an optical transmission bandgap. A CL is aligned to form a spring-like, tunable Bragg grating that is naturally responsive to external agitations providing a spectral transition regime, or edge, in the optical transmission bandgap of the transverse grating that respond to broadband acoustic waves. The optoacoustic sensor includes a narrowband light source that is oriented to transmit light through the top plate, the LC cell, and the bottom plate. The optoacoustic sensor …
Influence Of Materials And Design Parameters On Zinc Oxide Surface Acoustic Devices, Samuel B. Dewhitt
Influence Of Materials And Design Parameters On Zinc Oxide Surface Acoustic Devices, Samuel B. Dewhitt
Theses and Dissertations
This thesis presents research into Zinc Oxide (ZnO) based resonators to include Width Extensional Mode (WEM), Length Extensional Mode (LEM), and Surface Acoustic Wave (SAW) devices. The design and operation of ZnO based SAW devices are investigated further to characterize design parameters and operating modes. Their design, fabrication, and results are discussed in detail. SAW device testing in conjunction with X-Ray Diffractometry (XRD) and Atomic Force Microscopy (AFM) are utilized to characterize ZnO and its deposition parameters on a variety of different substrates and interlayers, with different deposition temperatures and annealing parameters. These substrates include silicon, silicon oxide-on-silicon, and sapphire …
Model-Based Design Of An Optimal Lqg Regulator For A Piezoelectric Actuated Smart Structure Using A High-Precision Laser Interferometry Measurement System, Grant P. Gallagher
Model-Based Design Of An Optimal Lqg Regulator For A Piezoelectric Actuated Smart Structure Using A High-Precision Laser Interferometry Measurement System, Grant P. Gallagher
Master's Theses
Smart structure control systems commonly use piezoceramic sensors or accelerometers as vibration measurement devices. These measurement devices often produce noisy and/or low-precision signals, which makes it difficult to measure small-amplitude vibrations. Laser interferometry devices pose as an alternative high-precision position measurement method, capable of nanometer-scale resolution. The aim of this research is to utilize a model-based design approach to develop and implement a real-time Linear Quadratic Gaussian (LQG) regulator for a piezoelectric actuated smart structure using a high-precision laser interferometry measurement system to suppress the excitation of vibratory modes.
The analytical model of the smart structure is derived using the …
Hinged Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim
Hinged Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim
AFIT Patents
A passive microscopic Fabry-Pérot Interferometer (FPI) sensor includes a three-dimensional microscopic optical structure formed on a cleaved tip of the optical fighter using a two-photon polymerization process on a photosensitive polymer by a three-dimensional micromachining device. The three-dimensional microscopic optical structure having a hinged optical layer pivotally connected to a distal portion of a suspended structure. A reflective layer is deposited on a mirror surface of the hinged optical layer while in an open position. The hinged optical layer is subsequently positioned in the closed position to align the mirror surface to at least partially reflect a light signal back …
Method Of Making Hinged Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim
Method Of Making Hinged Self-Referencing Fabry–Pérot Cavity Sensors, Jeremiah C. Williams, Hengky Chandrahalim
AFIT Patents
A method is provided for fabricating a passive optical sensor on a tip of an optical fiber. The method includes perpendicularly cleaving a tip of an optical fiber and mounting the tip of the optical fiber in a specimen holder of a photosensitive polymer three-dimensional micromachining machine. The method includes forming a three-dimensional microscopic optical structure within the photosensitive polymer that comprises a two cavity Fabry-Perot Interferometer (FPI) having a hinged optical layer that is pivotally coupled to a suspended structure. The method includes removing an uncured portion of the photosensitive polymer using a solvent. The method includes depositing a …
Design And Fabrication Of A Low-Cost, Portable, Battery-Operated Surface Enhanced Raman Scattering (Sers) Optical Device, Blessing Adewumi
Design And Fabrication Of A Low-Cost, Portable, Battery-Operated Surface Enhanced Raman Scattering (Sers) Optical Device, Blessing Adewumi
LSU Doctoral Dissertations
Raman Spectroscopy is a time-honored, non-invasive method for analyzing and identifying the molecular composition of materials. However, unenhanced Raman Spectroscopy has extremely low sensitivity which limits its sensing capability. SERS brings rough nano-metallic surfaces in contact with the material molecules to enormously enhance the Raman signals.
The sensitivity of SERS can be exploited in probe applications where the spectrometer needs to be brought near the specimen. For example, a long optical fiber coupled to a SERS device can be used to characterize and identify easy-to-reach cancerous tissues in organisms. Unfortunately, background signals in a long fiber can easily mask any …
A Computational Exploration Of The Scandate Cathode Surface, Shankar Miller-Murthy
A Computational Exploration Of The Scandate Cathode Surface, Shankar Miller-Murthy
Theses and Dissertations--Chemical and Materials Engineering
The exact surface configuration of scandate cathodes has been a point of contention for the materials community for a long time. Without proper understanding of it and the related structures and emission mechanisms, scandate cathodes remain patchy and unreliable emitters. Thus, density functional theory techniques were applied to various potential surface arrangements and found that there are several low-energy surfaces with low work functions that incorporate a scandium interlayer between tungsten and oxygen or otherwise have a scandium-on-tungsten structure. Furthermore, it was discovered that adding a monolayer of scandium directly to a tungsten surface is surprisingly favorable, thermodynamically. While none …
Laptop Recycling Case Study: Estimating The Contained Value And Value Recovery Process Feasibility Of End-Of-Life Consumer Electronics, Zebulon Hart
Theses and Dissertations--Mining Engineering
Work has been done to establish, through the development and use of novel assay techniques and analysis metrics, the contained value of a sampling of laptop computers (as an analog for myriad e-waste sources). This work has conceptualized e-waste as an alternative to geologic-origin complex metallic ores and has likewise evaluated the feasibility of value recovery from e-waste sources in a similar manner to an ore. The application of conventional and novel mineral separation techniques to e-waste recycling processes has been evaluated and positive results are demonstrated. Further, this work has demonstrated the ability to identify the presence of base …
An Archimedes' Screw For Light, Emanuele Galiffi, Paloma A. Huidobro, J. B. Pendry
An Archimedes' Screw For Light, Emanuele Galiffi, Paloma A. Huidobro, J. B. Pendry
Advanced Science Research Center
An Archimedes’ Screw captures water, feeding energy into it by lifting it to a higher level. We introduce the first instance of an optical Archimedes’ Screw, and demonstrate how this system is capable of capturing light, dragging it and amplifying it. We unveil new exact analytic solutions to Maxwell’s Equations for a wide family of chiral space-time media, and show their potential to achieve chirally selective amplification within widely tunable parity-time-broken phases. Our work, which may be readily implemented via pump-probe experiments with circularly polarized beams, opens a new direction in the physics of time-varying media by merging the rising …
Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
AFIT Patents
A passive microscopic Fabry-Pérot Interferometer (FPI) sensor an optical fiber a three-dimensional microscopic optical structure formed on a cleaved tip of an optical fighter that reflects a light signal back through the optical fiber. The reflected light is altered by refractive index changes in the three-dimensional structure that is subject to at least one of: (i) thermal radiation; and (ii) volatile organic compounds.
Investigation Of Optical And Structural Properties Of Gesn Heterostructures, Oluwatobi Gabriel Olorunsola
Investigation Of Optical And Structural Properties Of Gesn Heterostructures, Oluwatobi Gabriel Olorunsola
Graduate Theses and Dissertations
Silicon (Si)-based optoelectronics have gained traction due to its primed versatility at developing light-based technologies. Si, however, features indirect bandgap characteristics and suffers relegated optical properties compared to its III-V counterparts. III-Vs have also been hybridized to Si platforms but the resulting technologies are expensive and incompatible with standard complementary-metal-oxide-semiconductor processes. Germanium (Ge), on the other hand, have been engineered to behave like direct bandgap material through tensile strain interventions but are well short of attaining extensive wavelength coverage. To create a competitive material that evades these challenges, transitional amounts of Sn can be incorporated into Ge matrix to form …
Method Of Making Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
Method Of Making Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith
AFIT Patents
A method of making passive microscopic Fabry-Pérot Interferometer (FPI) sensor includes forming a three-dimensional microscopic optical structure on a cleaved tip of an optical fiber that reflects a light signal back through the optical fiber. The reflected light is altered by refractive index changes in the three-dimensional structure that is subject to at least one of: (i) thermal radiation; and (ii) volatile organic compounds.
Distributed Modeling Approach For Electrical And Thermal Analysis Of High-Frequency Transistors, Amirreza Ghadimi Avval
Distributed Modeling Approach For Electrical And Thermal Analysis Of High-Frequency Transistors, Amirreza Ghadimi Avval
Graduate Theses and Dissertations
The research conducted in this dissertation is focused on developing modeling approaches for analyzing high-frequency transistors and present solutions for optimizing the device output power and gain. First, a literature review of different transistor types utilized in high-frequency regions is conducted and gallium nitride high electron mobility transistor is identified as the promising device for these bands. Different structural configurations and operating modes of these transistors are explained, and their applications are discussed. Equivalent circuit models and physics-based models are also introduced and their limitations for analyzing the small-signal and large-signal behavior of these devices are explained. Next, a model …
Direct Torque Control For Silicon Carbide Motor Drives, Mohammad Hazzaz Mahmud
Direct Torque Control For Silicon Carbide Motor Drives, Mohammad Hazzaz Mahmud
Graduate Theses and Dissertations
Direct torque control (DTC) is an extensively used control method for motor drives due to its unique advantages, e.g., the fast dynamic response and the robustness against motor parameters variations, uncertainties, and external disturbances. Using higher switching frequency is generally required by DTC to reduce the torque ripples and decrease stator current total harmonic distortion (THD), which however can lower the drive efficiency. Through the use of the emerging silicon carbide (SiC) devices, which have lower switching losses compared to their silicon counterparts, it is feasible to achieve high efficiency and low torque ripple simultaneously for DTC drives.
To overcome …
Design And Fabrication Of A Microstrip Bandpass Filter In Ltcc, Allison Rucker
Design And Fabrication Of A Microstrip Bandpass Filter In Ltcc, Allison Rucker
Electrical Engineering Undergraduate Honors Theses
The goal of the project was to design and fabricate a bandpass filter with a center frequency of 25GHz with a 2GHz bandwidth. The first step was to do the calculation to design a bandpass filter to meet these specifications along with the properties of the DupontTM GreenTapeTM 9K7. HFSS was then used to verify the results from the initial calculations. There was a significant error between the two results, so more tweaking was done to the calculations to get a better center frequency. After a final design was decided, the fabrication process started. Low-Temperature Co-Fired Ceramics (LLTC) …
Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran
Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran
Graduate Theses and Dissertations
Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 μm, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 μm, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 μm, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 μm, and (5) very longwave IR extending beyond 12.0 μm. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic …