Electronic Devices and Semiconductor Manufacturing Commons^™

Performance And Economics Of Solar Inverters And Module Level Power Electronics In A 1 Mw Photovoltaic System, Maxwell Criswell

Biological and Agricultural Engineering Undergraduate Honors Theses

Photovoltaic solar panels convert sunlight to electricity in the form of direct current; therefore, a necessary component of every photovoltaic system is an inverter to convert the electricity to usable alternating current. There are various commercially available inverter technologies manufactured today such as microinverters, string inverters, and central inverters, as well as module level power electronic devices such as DC optimizers that are capable of improving system performance in string and central inverter systems. This thesis compares the performance and economics of five different inverter and module level power electronic systems through model simulation using Helioscope software. The five alternatives …

Temperature-Immune Self-Referencing Fabry–Pérot Cavity Sensors, Hengky Chandrahalim, Jonathan W. Smith

AFIT Patents

A passive microscopic Fabry-Pérot Interferometer (FPI) sensor an optical fiber a three-dimensional microscopic optical structure formed on a cleaved tip of an optical fighter that reflects a light signal back through the optical fiber. The reflected light is altered by refractive index changes in the three-dimensional structure that is subject to at least one of: (i) thermal radiation; and (ii) volatile organic compounds.

Development Of Light Actuated Chemical Delivery Platform On A 2-D Array Of Micropore Structure, Hojjat Rostami Azmand, Hojjat Rostami Azmand

Dissertations and Theses

Localized chemical delivery plays an essential role in the fundamental information transfers within biological systems. Thus, the ability to mimic the natural chemical signal modulation would provide significant contributions to understand the functional signaling pathway of biological cells and develop new prosthetic devices for neurological disorders. In this paper, we demonstrate a light-controlled hydrogel platform that can be used for localized chemical delivery in a high spatial resolution. By utilizing the photothermal behavior of graphene-hydrogel composites confined within micron-sized fluidic channels, patterned light illumination creates the parallel and independent actuation of chemical release in a group of fluidic ports. The …

Perovskite Thin Films Annealed In Supercritical Fluids For Efficient Solar Cells, Gilbert Annohene

Theses and Dissertations

In the field of photovoltaics, scientists and researchers are working fervently to produce a combination of efficient, stable, low cost and scalable devices. Methylammonium lead trihalide perovskite has attracted intense interest due to its high photovoltaic performance, low cost, and ease of manufacture. Their high absorption coefficient, tunable bandgap, low-temperature processing, and abundant elemental constituent provide innumerable advantages over other thin film absorber materials. Since the perovskite film is the most important in the device, morphology, crystallization, compositional and interface engineering have been explored to boost its performance and stability. High temperatures necessary for crystallization of organic-inorganic hybrid perovskite films …

Doping Graphene With Substitutional Mn, Pin-Cheng Lin, Renan Villarreal, Simona Achilli, Harsh Bana, Maya N. Nair, Antonio Tejeda, Ken Verguts, Stefan De Gendt, Manuel Auge, Hans Hofsäss, Steven De Feyter, Giovanni Di Santo, Luca Petaccia, Steven Brems, Guido Fratesi, Lino M. C. Pereira

Advanced Science Research Center

We report the incorporation of substitutional Mn atoms in high-quality, epitaxial graphene on Cu(111), using ultralow-energy ion implantation. We characterize in detail the atomic structure of substitutional Mn in a single carbon vacancy and quantify its concentration. In particular, we are able to determine the position of substitutional Mn atoms with respect to the Moiré superstructure (i.e., local graphene-Cu stacking symmetry) and to the carbon sublattice; in the out-of-plane direction, substitutional Mn atoms are found to be slightly displaced toward the Cu surface, that is, effectively underneath the graphene layer. Regarding electronic properties, we show that graphene doped with substitutional …

Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel

Theses

The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …

Design, Fabrication, And Reliability Effects Of Additively Manufactured First Level Compliant Interconnects For Microelectronics Application, Tumininu David Olatunji

Graduate Theses and Dissertations

Semiconductor packaging and development is greatly dependent on the magnitude of interconnect and on-chip stress that ultimately limits the reliability of electronic components. Thermomechanical related strains occur because of the coefficient of thermal expansion mismatch from different conjoined materials being assembled to manufacture a device. To curb the effect of thermal expansion mismatch between conjoined parts, studies have been done in integrating compliant structures between dies, solder balls, and substrates. Initial studies have enabled the design and manufacturing of these structures using a photolithography approach which involves a high number of fabrication steps depending on the complexity of the structures …

Fourier Transform Infrared Spectroscopy For The Measurement Of Gesn/(Si)Gesn, Solomon Opeyemi Ojo

Graduate Theses and Dissertations

Photoluminescence (PL) and Electroluminescence (EL) characterization techniques are important tools for studying the optical and electrical properties of (Si)GeSn. Light emission from these PL and EL measurements provides relevant information on material quality, bandgap energy, current density, and device efficiency. Prior to this work, the in-house PL set-up of this lab which involves the use of a commercially-obtained dispersive spectrometer was used for characterizing both GeSn thin film and fabricated devices, but these measurements were limited by issues bordering on low spectral resolution, spectral artifacts, and poor signal-to-noise ratio (SNR) thereby resulting in the possible loss of vital information and …

Growth And Characterization Of Semiconductor Materials And Devices For Extreme Environments Applications, Abbas Sabbar

Graduate Theses and Dissertations

Numerous industries require electronics to operate reliably in harsh environments, such as extreme high temperatures (HTs), low temperature (LT), radiation rich environments, multi-extreme, etc. This dissertation is focused on two harsh environments: HT and multi-extreme.

The first study is on HT optoelectronics for future high-density power module applications. In the power modules design, galvanic isolation is required to pass through the gate control signal, reject the transient noise, and break the ground loops. The optocoupler, which consists of a lighting emitting diode (LED) and photodetector (PD), is commonly used as the solution of galvanic isolation at room temperatures. There is …

High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan

Graduate Theses and Dissertations

Power modules based on wide bandgap (WBG) materials enhance reliability and considerably reduce cooling requirements that lead to a significant reduction in total system cost and weight. Although these innovative properties lead power modules to higher power density, some concerns still need to be addressed to take full advantage of WBG-based modules. For example, the use of bulky transformers as a galvanic isolation system to float the high voltage gate driver limits further size reduction of the high-temperature power modules. Bulky transformers can be replaced by integrating high-temperature optocouplers to scale down power modules further and achieve disrupting performance in …

Optimized Transconductance Designs To Enhance The Linearity Performance Of Rf Front-End Receiver Circuits In 130 Nm Cmos Technology, Nandini Vitee

Student Works (2020-2029)

Highly linear front-end circuits are greatly desired for wireless receivers to improve the dynamic range. However, intermodulation distortions caused by the non-linear transconductor current limits the linearity of the front-end receiver circuit in CMOS technologies. In addition to the inherent nonlinear effect, the downscaling of CMOS further exacerbates the linearity of the circuit due to lower voltage headroom and high-field mobility. Thus, it is essential to develop effective circuit techniques that can aid linearity enhancement without jeopardizing other preferred performances such as low noise, high conversion gain, and low-power consumption. In this thesis, two different high linear transconductors are presented …

Performance Of Pld Grown Zno Thin Film As A Thin Film Transistor, Shahidul Asif

Graduate Theses/Dissertations

The performance of ZnO thin film (grown in different parameters) as a thin film transistor (TFT) is the focus of this study. ZnO is renowned for being n-type semiconductor naturally which was utilized in fabricating a thin film transistor here. This thesis is compared the performance of ZnO thin film transistor by growing the thin film using pulsed laser deposition (PLD) on two slightly different substrates at different temperatures in an optimal 0.1 milli bar oxygen pressure which was later analyzed using other material characterization methods. The substrates were both Si (100) but had different resistivity due to different amount …

Comparison Of Pressure-Assist Silver Sintering To Tin Silver Solder Alloy As Die Attach Material In High Power Semiconductor, Tolentino Erik Nino

Student Works (2020-2029)

The research is focused on pressure-assisted silver sintering material that is compared to tin silver solder alloy paste as used in power electronics. Material characterization, electrical tests, and reliability tests were conducted in the experiment. After drying process, it was observed that the Ag sintering paste height was reduced to approximately 40 percent. Die attach shear test showed that the average reading is about from 200 to 600 grams which are already enough to hold the dice before proceeding to the pressure sintering process. X-ray revealed that the void percent for SnAg paste sample is about 1.5 percent while pressure-assist …

Synthesis And Application Of Ceramic Paste For High-Temperature Electronic Packaging, Ardalan Nasiri

Graduate Theses and Dissertations

This dissertation research focused on the synthesis and application of ceramic paste for high-temperature applications. An alumina paste material comprising aluminum dihydric phosphate and alumina powder was developed for high-temperature electronic packaging. Nano aluminum nitride and nano-silica powders were embedded to promote the paste curing process, limit the grain growth, and increase its bond shear strength. The chip-to-substrate bond strength was enhanced and met the MIL-STD requirements for die-attach assembly. Its encapsulation property was improved with fewer cracks compared to similar commercial ceramic encapsulants. The die-attach material and encapsulation properties tested at 500°C showed no defect or additional cracks. Thermal …

Development Of Integrated Zinc Oxide Nanorods Coated Glass Substrate Sensing Device, Mohd Yusof Haziezol Helmi

Student Works (2020-2029)

A simple and practical cost-effective integrated zinc oxide (ZnO) nanorods coated glass substrate sensing device for humidity and formaldehyde vapor sensing applications is reported. The developed sensor device is composed of a commercial light-emitting diode (LED) and photodiode that correspondingly served as light source and detector which precisely positioned on a 3D printed sensor platform. A receiver circuit and Arduino platform were employed for signal amplification and processing. A uniform ZnO nanorods coating were grown on the surface of glass substrate via hydrothermal method by controlling the growth durations and coating length. A standard reference for the optimum working condition …

Noble-Transition Alloy Absorbers For Near-Infrared Hot-Carrier Optoelectronics, Sara Karoline Figueiredo Stofela

LSU Doctoral Dissertations

Optoelectronics is the field of technology concerned with the study and application of electronic devices that source, detect and control light. Here we focus on the optical communications field which relies on optical fiber systems to carry signals to their destinations operating in the near-infrared range. To improve the performance of current optical fiber systems, one of the paths is to develop better near-infrared photodetectors.

The current group of materials used for near-infrared photodetection relies in the III-V semiconductor family. Although their spectral photosensitivity correlates well with the near-infrared, response time performance and electronic circuit integration remain limited for this …

Fabrication, Characterization And Applications Of Highly Conductive Wet-Spun Pedot:Pss Fibers, Ruben Sarabia Riquelme

Theses and Dissertations--Chemical and Materials Engineering

Smart electronic textiles cross conventional uses to include functionalities such as light emission, health monitoring, climate control, sensing, storage and conversion of energy, etc. New fibers and yarns that are electrically conductive and mechanically robust are needed as fundamental building blocks for these next generation textiles.

Conjugated polymers are promising candidates in the field of electronic textiles because they are made of earth-abundant, inexpensive elements, have good mechanical properties and flexibility, and can be processed using low-cost large-scale solution processing methods. Currently, the main method to fabricate electrically conductive fibers or yarns from conjugated polymers is the deposition of the …

A Hybrid Electronic Nose System Based On Metal Oxide Semiconductor Gas Sensors And Compact Paper-Pased Colorimteric Sensors For Volatile Organic Compounds Classification, Aung Khant Maw

Chulalongkorn University Theses and Dissertations (Chula ETD)

Commercial metal oxide semiconductor (MOS) sensors usually employed in electronic noses (e-noses) are well known for being low-cost, portability, and ease of use. However, these sensors can only identify a limited number of odors due to insufficient selectivity. Recent studies improved the selectivity by jointly integrating the MOS sensors with additional sensor sources. However, the published hybrid systems involved complex fabrication and measurement procedures. On the contrary, this work utilizes paper-based colorimetric sensors which are simpler and easier to use. This proposed hybrid system consists of 8 commercial metal oxide sensors and a paper-based colorimetric sensor coated with phenol red, …

Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves

Graduate Theses, Dissertations, and Problem Reports (ETD)

Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …

Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao

Graduate Theses and Dissertations

The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability.

However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs …

Algorithmic Multi-Color Cmos Avalanche Photodiodes For Smart-Lighting Applications, Md Mottaleb Hossain

Optical Science and Engineering ETDs

Future smart-lighting systems are expected to deliver adaptively color-tunable and high-quality lighting that is energy efficient while also offering integrated visible-light wireless communication services. To enable these systems at a commercial level, inexpensive and fast sensors with spectral-sensing capability are required. CMOS-compatible silicon avalanche photodiodes (APDs) can be an excellent fit to this problem due to their excellent sensitivity, high speeds and cost effectiveness; however, color sensing is a challenge without resorting to expensive spectral filters, as done in commercially. To address this challenge, we have recently designed and modeled a novel CMOS-compatible dual-junction APD. The device outputs two photocurrents …

Bgaas Alloy Semiconductors For Lasers On Silicon, Joshua Mcarthur

Mechanical Engineering Undergraduate Honors Theses

In the world of semiconductors today, there is a large dissonance between optical devices and electrical application. Due to the limitations of electron transport, photonic integrated circuits are soon-to-be vital in fields like telecommunications and sensing. Right now, these PIC’s are mostly made from indium phosphide. Due to its ubiquitous nature, however, there is a huge push to integrate efficient optics with silicon. It’s cheap, abundant, dope-able, and our electronic infrastructure is based on it. The reason why silicon photonics aren’t already commercialized is because of silicon’s indirect bandgap—it is inefficient with optical applications. The problem with combining direct gap …

A Silicon Germanium Cmos Linear Voltage Regulator For Wireless Agricultural Applications, Aminta Naidili Castillo Robles

Graduate Theses and Dissertations

This thesis presents the design, simulation and test results of a silicon germanium (SiGe) complementary metal-oxide-semiconductor (CMOS) linear regulator. The objective of the circuit is to power other analog devices regardless of the load current and input voltage changes. The application of this regulator is to be part of a project developing a miniaturized semiconductor platform that can be inserted into stems of crops in order to measure data inside the plant and then send it wirelessly to the user. The linear regulator was designed on a BiCMOS SiGe 0.13µm which is a GlobalFoundries process. It has been tested at …

Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant

Graduate Theses and Dissertations

The development of new materials for efficient optoelectronic devices from Group IV elements is the heart of Group IV photonics. This has direct ties to modern technology as the foundation for the electronics industry is silicon. This has driven the development of silicon-based optoelectronics using these other Group IV materials as silicon is a poor optical material due to its indirect band gap when compared to the III-V semiconductors that are used by most of the optoelectronics industry. While efforts have been made to integrate III-V materials onto silicon substrates, the incompatibility with the complementary metal oxide semiconductor process has …

Engineering Plasmonic Nanostructures For Light Management And Sensing, Sujan Phani Kumar Kasani

Graduate Theses, Dissertations, and Problem Reports (ETD)

The two major global problems are to provide health safety and to meet energy demands for ever growing population on a large scale. The study of light interaction with nanostructures has shown a promising solution in improving the fields of bio-sensor and solar energy devices which addresses above mentioned two major global problems. Nanostructures have tunable physicochemical properties such as light absorption, electrical and thermal properties unlike bulk materials, which gives an advantage in applications like bio-sensing and energy harvesting devices. The development of nanofabrication techniques along with the discovery of Surface Enhanced Raman Scattering (SERS) and Plasmon Enhanced Fluorescence …

Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li

Graduate Theses and Dissertations

Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and super lattices (SLs) are expected to be promising alternatives to random InGaN alloys since in principle they can achieve the equivalent band gap of InGaN random alloys with arbitrarily high In-content and at the same time bypass many growth difficulties.

This dissertation focuses on studying the growth mechanisms, structural properties and energy structures of InN/GaN …

Fabrication And Characterization Of Electrochemical Glucose Sensors, Mohammed Marie

Graduate Theses and Dissertations

Electrochemical sensors based on the nanostructure of the semiconductor materials are of tremendous interest to be utilized for glucose monitoring. The sensors, based on the nanostructure of the semiconductor materials, are the third generations of the glucose sensors that are fast, sensitive, and cost-effect for glucose monitoring.

Glucose sensors based on pure zinc oxide nanorods (NRs) grown on different substrates, such ITO, FTO, and Si/SiO2/Au, were investigated in this research. Silicon nanowire (NW)- based glucose sensors were also studied. First, an enzyme-based glucose sensor was fabricated out of glass/ITO/ZnO NRs/BSA/GOx/nafion membrane. The sensor was tested amperometrically at different glucose concentrations. …

Comparative Study Of Power Semiconductor Devices In A Multilevel Cascaded H-Bridge Inverter, Kenneth Mordi

Graduate Theses and Dissertations

This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET …

Vertical Transport Study Of Iii-V Type-Ii Superlattices, Zahra Taghipour

Optical Science and Engineering ETDs

Type-II strained layer superlattice (T2SL) semiconductors hold great promise for mid- and long-wavelength infrared photodetectors. While T2SL-based materials have advanced significantly in the last three decades, an outstanding challenge to improve the T2SLs is to understand the carrier transport and its limitations, in particular along the superlattice growth layers.

In this dissertation, an overview of the current state-of-the-art InAs/GaSb T2SLs is presented. Fundamental semiconductor device equations and transport properties, including miniband conduction and the drift-diffusion parameters, are reviewed, and the fundamental limiting factors in carrier's transport are discussed. Furthermore, the standard method of electron-beam-induced current technique to measuring these parameters …

Properties Of Matter, Mike Jackson, Holly Haney

High School Lesson Plans

Students will investigate the relationship(s) between thermal and electrical properties of matter. First, students will use a multimeter and temperature probe to investigate the relationship between electrical resistance and temperature of an electrical resistor composed of metals. They will then graph collected data to analyze the relationship and draw a conclusion as to their relationship. They will then perform the same investigation on a thermal resistor made of a semiconducting substance and analyze that collected data. Finally, using ClaimEvidence-Reasoning (CER) structure, students will use their experimental evidence to state the similarities and differences between the electro-thermal properties of metals and …