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Articles 2101 - 2130 of 2359

Full-Text Articles in Engineering

Electrochemical Generation Of Superoxide In Room-Temperature Ionic Liquids, Inas M. Alnashef, Matthew L. Leonard, Matthew C. Kittle, Michael A. Matthews, John W. Weidner Jan 2001

Electrochemical Generation Of Superoxide In Room-Temperature Ionic Liquids, Inas M. Alnashef, Matthew L. Leonard, Matthew C. Kittle, Michael A. Matthews, John W. Weidner

Faculty Publications

We have demonstrated that superoxide ion can be generated electrochemically in room-temperature ionic-liquid solvents. In the absence of impurities, cyclic voltammetry showed that the super oxide ion is stable in these solvents. Similar superoxide ion chemistry has previously been demonstrated in volatile and environmentally suspect aprotic solvents such as dimethyl formamide and acetonitrile. However, ionic liquids are nonvolatile and should minimize the problems of secondary solvent waste. It is proposed that the resultant superoxide ion can be used to perform low temperature oxidation of wastes. Low-temperature oxidation of waste solvents can provide a much needed alternative to high-temperature waste incinerators, …

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Consensus Ontologies: Reconciling The Semantics Of Web Pages And Agents, Larry M. Stevens, Michael N. Huhns Jan 2001

Consensus Ontologies: Reconciling The Semantics Of Web Pages And Agents, Larry M. Stevens, Michael N. Huhns

Faculty Publications

As you build a Web site, it is worthwhile asking, "Should I put my information where it belongs or where people are most likely to look for it?" Our recent research into improving searching through ontologies is providing some interesting results to answer this question. The techniques developed by our research bring organization to the information received and reconcile the semantics of each document. Our goal is to help users retrieve dynamically generated information that is tailored to their individual needs and preferences. We believe that it is easier for individuals or small groups to develop their own ontologies, regardless …

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Automating Supply Chains, Michael N. Huhns, Larry M. Stevens Jan 2001

Automating Supply Chains, Michael N. Huhns, Larry M. Stevens

Faculty Publications

A recent study found that supply-chain problems cost companies between 9 and 20 percent of their value over a six-month period (T.J. Becker, 2000). The problems range from part shortages to poorly utilized plant capacity. When you place this in the context of the overall business-to-business (B2B) market expected to reach US$7 trillion by 2004 (37 percent of which is projected to be e-commerce sales), it is easy to see that effective supply-chain management (SCM) tools could save companies billions of dollars. Attempts to automate solutions to these problems are complicated by the need for the different companies in a …

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Trust And Persistence, Paul A. Buhler, Michael N. Huhns Jan 2001

Trust And Persistence, Paul A. Buhler, Michael N. Huhns

Faculty Publications

We rely on computers to control our power plants and water supplies, our automobiles and transportation systems, and soon our economic and political systems. Increasingly, software agents are enmeshed in these systems, serving as the glue that connects distributed components. Clearly, we need mechanisms to determine whether these agents are trustworthy. What do we need to establish trust? Agents are often characterized by features such as autonomy, sociability, proactiveness, and persistent identity. This latter feature is key in determining trust. When agents operate over an extended period, they can earn a reputation for competence, timeliness, ease of use, and trustworthiness, …

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Probability And Agents, Marco Valtorta, Michael N. Huhns Jan 2001

Probability And Agents, Marco Valtorta, Michael N. Huhns

Faculty Publications

To make sense of the information that agents gather from the Web, they need to reason about it. If the information is precise and correct, they can use engines such as theorem provers to reason logically and derive correct conclusions. Unfortunately, the information is often imprecise and uncertain, which means they will need a probabilistic approach. More than 150 years ago, George Boole presented the logic that bears his name. There is concern that classical logic is not sufficient to model how people do or should reason. Adopting a probabilistic approach in constructing software agents and multiagent systems simplifies some …

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Philosophical Agents, John R. Rose, Michael N. Huhns Jan 2001

Philosophical Agents, John R. Rose, Michael N. Huhns

Faculty Publications

Abstraction is the technique we use to deal with complexity. What is the proper kind and level of abstraction for complex software agents? We think it would be reasonable to endow agents with a philosophy. Then, by understanding their philosophies, we can use them more effectively. To endow agents with ethical principles, developers need an architecture that supports explicit goals, principles and capabilities, as well as laws and ways to sanction or punish miscreants. All of the ethical approaches described in this article are single-agent in orientation and encode other agents implicitly.

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Hysteresis During Cycling Of Nickel Hydroxide Active Material, Venkat Srinivasan, John W. Weidner, John Newman Jan 2001

Hysteresis During Cycling Of Nickel Hydroxide Active Material, Venkat Srinivasan, John W. Weidner, John Newman

Faculty Publications

The nickel hydroxide electrode is known to exhibit a stable hysteresis loop, with the potential on charge being higher than that on discharge at every state-of-charge (SOC). What we show here is that this loop created during a complete charge and discharge (i.e., boundary curves) is not sufficient to define the state of the system. Rather, internal paths within the boundary curves (i.e., scanning curves) can be generated that access potentials between the boundary curves. The potential obtained at any SOC, as well as how the material charges and discharges from that point, depends on the …

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Multimode Quantitative Scanning Microwave Microscopy Of In Situ Grown Epitaxial Ba1-XSrXTio3 Composition Spreads, K. S. Chang, M. Aronova, O. Famodu, I. Takeuchi, S. E. Lofland, Jason R. Hattrick-Simpers, H. Chang Jan 2001

Multimode Quantitative Scanning Microwave Microscopy Of In Situ Grown Epitaxial Ba1-XSrXTio3 Composition Spreads, K. S. Chang, M. Aronova, O. Famodu, I. Takeuchi, S. E. Lofland, Jason R. Hattrick-Simpers, H. Chang

Faculty Publications

We have performed variable-temperature multimode quantitative microwavemicroscopy of in situepitaxial Ba1−xSrxTiO3 thin-film composition spreads fabricated on (100) LaA1O3 substrates. Dielectric properties were mapped as a function of continuously varying composition from BaTiO3 to SrTiO3. We have demonstrated nondestructive temperature-dependent dielectric characterization of local thin-film regions. Measurements are simultaneously taken at multiple resonant frequencies of the microscope cavity. The multimode measurements allow frequency dispersion studies. We observe strong composition-dependent dielectric relaxation in Ba1−xSrxTiO3 at microwave frequencies.

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Preparation Of Ordered Macroporous Sr0.5sm0.5coo3 As Cathode For Solid Oxide Fuel Cells, Fanglin Chen, Changrong Xia, Meilin Liu Jan 2001

Preparation Of Ordered Macroporous Sr0.5sm0.5coo3 As Cathode For Solid Oxide Fuel Cells, Fanglin Chen, Changrong Xia, Meilin Liu

Faculty Publications

Ordered macroporous Sr0.5Sm0.5CoO3 structrures with an average pore size of 140 nm have been prepared using closepacked arrangement of monodispersed polystyrene spheres as templates. A fuel cell using ordered macroporous Sr0.5Sm0.5CoO3 as the cathode, gadolinia-doped ceria (GDC) film as the electrolyte, and GDC–NiO as the anode generated maximum power densities of 150, 196 and 267 mW/cm2 at 500, 550 and 600 °C, respectively.

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Approximate Solutions For Galvanostatic Discharge Of Spherical Particles I. Constant Diffusion Coefficient, Venkat R. Subramanian, James A. Ritter, Ralph E. White Jan 2001

Approximate Solutions For Galvanostatic Discharge Of Spherical Particles I. Constant Diffusion Coefficient, Venkat R. Subramanian, James A. Ritter, Ralph E. White

Faculty Publications

Approximate models are developed, based on second, fourth, and sixth order polynomials, that describe the concentration profile of an electrochemically active species in a spherical electrode particle. Analytical expressions are obtained that describe the way the concentration profiles, surface concentrations, and electrode utilization change during the galvanostatic discharge of an electrode particle. Based on a comparison with an exact analytical model over a wide range of dimensionless current densities, all three approximate models performed extremely well in predicting these quantities. Quantitative criterion for the validity of these models is also developed and shows that the sixth order, four parameter approximate …

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Modeling Of A Nickel-Hydrogen Cell: Phase Reactions In The Nickel Active Material, B. Wu, Ralph E. White Jan 2001

Modeling Of A Nickel-Hydrogen Cell: Phase Reactions In The Nickel Active Material, B. Wu, Ralph E. White

Faculty Publications

No abstract provided.

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Modeling Lithium Intercalation In A Porous Carbon Electrode, Gerardine G. Botte, Ralph E. White Jan 2001

Modeling Lithium Intercalation In A Porous Carbon Electrode, Gerardine G. Botte, Ralph E. White

Faculty Publications

No abstract provided.

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Synthesis And Characterization Of Hydrous Ruthenium Oxide-Carbon Supercapacitors, Manikandan Ramani, Bala S. Haran, Ralph E. White, Branko N. Popov Jan 2001

Synthesis And Characterization Of Hydrous Ruthenium Oxide-Carbon Supercapacitors, Manikandan Ramani, Bala S. Haran, Ralph E. White, Branko N. Popov

Faculty Publications

It is shown that composite Ru oxide-carbon based supercapacitors possess superior energy and power densities as compared to bare carbon. An electroless deposition process was used to synthesize the ruthenium oxide-carbon composites. Ru is dispersed on the carbon matrix as small particles. The effect of electrochemical oxidation and temperature treatment on the material performance has been studied extensively. Increasing the oxidation temperature reduces the proton transport rate and also increases the degree of crystallinity of the deposits. This adversely affects the performance of the composite. Loading a small amount of Ru oxide (9 wt %) on carbon increases the capacitance …

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Inside An Agent, José M. Vidal, Paul A. Buhler, Michael N. Huhns Jan 2001

Inside An Agent, José M. Vidal, Paul A. Buhler, Michael N. Huhns

Faculty Publications

When we discuss agent-based system construction with software developers or ask students to implement common agent architectures using object-oriented techniques, we find that it is not trivial for them to create an elegant system design from the standard presentation of these architectures in textbooks or research papers. To better communicate our interpretation of popular agent architectures, we draw UML (Unified Modeling Language) diagrams to guide an implementer's design. However, before we describe these diagrams, we need to review some basic features of agents. The paper considers an architecture showing a simple agent interacting with an environment. The agent senses its …

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High-Quality P-N Junctions With Quaternary Alingan/Ingan Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur Dec 2000

High-Quality P-N Junctions With Quaternary Alingan/Ingan Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur

Faculty Publications

We report on quaternary AlInGaN/InGaN multiple quantum well(MQW)light emitting diode structures grown on sapphire substrates. The structures demonstrate high quality of the p–njunctions with quaternary MQW. At low forward bias (below 2 V), the temperature dependent of current–voltage characteristics are exponential with the ideality factor of 2.28, which is in a good agreement with the model of the injected carrier recombination in the space charge region. This ideality factor value is approximately three times lower than for conventional GaN/InGaN light emitting diodes(LEDs). The obtained data indicate the recombination in p–njunction space charge region to be responsible for a current transport …

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Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang Dec 2000

Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The effect of the gate leakage current fluctuations on noiseproperties of AlGaN/GaN heterostructurefield effect transistors(HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductorheterostructurefield effect transistors (MOS-HFETs). The comparison of the noiseproperties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate currentnoise to the HFET’s output noise. The effect of the gate current fluctuations on output noiseproperties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10−3, even a …

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Hop Integrity In Computer Networks, Mohamed G. Gouda, E.N. Elnozahy, Chin-Tser Huang, Tommy M. Mcguire Nov 2000

Hop Integrity In Computer Networks, Mohamed G. Gouda, E.N. Elnozahy, Chin-Tser Huang, Tommy M. Mcguire

Faculty Publications

A computer network is said to provide hop integrity iff when any router p in the network receives a message m supposedly from an adjacent router q, then p can check that m was indeed sent by q, was not modified after it was sent, and was not a replay of an old message sent from q to p. We describe three protocols that can be added to the routers in a computer network so that the network can provide hop integrity. These three protocols are a secret exchange protocol, a weak integrity protocol, and a strong integrity protocol. All …

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High Performance Micropane Electron Beam Window, Roger A. Dougal, Shengyi Liu Nov 2000

High Performance Micropane Electron Beam Window, Roger A. Dougal, Shengyi Liu

Faculty Publications

A silicon disk etched so that it contains a multitude of microscopic and thin window panes (micropanes) can potentially transmit a larger average electron beam current density and absorb a smaller fraction of the beam energy than a common metal foil window. The enhanced performance is achieved by a combination of decreased power loss due to the extremely small window thickness (~1 μm), and increased conductive cooling due to the small diameter (~50 μm) of the micropanes and the large cross section of the honeycomb structure that supports the micropanes. Beam current densities up to 34 A/cm2 are permitted within …

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Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska Oct 2000

Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

We report on the comparative photoluminescence studies of AlGaN/GaN, GaN/InGaN, and AlInGaN/InGaN multiple quantum well(MQW) structures. The study clearly shows the improvement in materials quality with the introduction of indium. Our results point out the localized state emission mechanism for GaN/InGaN structures and the quantum well emission mechanism for AlInGaN/InGaN structures. The introduction of indium is the dominant factor responsible for the observed differences in the photoluminescence spectra of these MQW structures.

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High Electron Mobility In Algan/Gan Heterostructures Grown On Bulk Gan Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude Oct 2000

High Electron Mobility In Algan/Gan Heterostructures Grown On Bulk Gan Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude

Faculty Publications

Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 cm2/V s for an electron sheet density of 2.4×1012 cm−2. Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The …

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Preparation Of Mesoporous Sno2-Sio2 Composite As Electrodes For Lithium Batteries, Fanglin Chen, Zhong Shi, Meilin Liu Oct 2000

Preparation Of Mesoporous Sno2-Sio2 Composite As Electrodes For Lithium Batteries, Fanglin Chen, Zhong Shi, Meilin Liu

Faculty Publications

Mesoporous SnO2–SiO2 composite stable up to 600 °C with a BET surface area of 350 m2 g-1 and an average pore size of 3.4 nm is successfully prepared, which exhibits promising cycling properties as anodes for lithium batteries

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Preparation Of Mesoporous Yttria-Stabilized Zirconia (Ysz) And Ysz-Nio Using A Triblock Copolymer As Surfactant, Fanglin Chen, Meilin Liu Oct 2000

Preparation Of Mesoporous Yttria-Stabilized Zirconia (Ysz) And Ysz-Nio Using A Triblock Copolymer As Surfactant, Fanglin Chen, Meilin Liu

Faculty Publications

Mesoporous yttria-stabilized zirconia (YSZ) and YSZ-NiO have been prepared for the first time using Pluronic P103 as a structure-directing agent and inorganic chlorides as precursors in a nonaqueous medium. After being fired at 500°C for 2 h, mesostructured YSZ has a BET surface area of about 146 m2 g-1, with an average pore size of 3.8 nm, while mesostructured YSZ-NiO has a BET surface area of about 108 m2 g-1, with an average pore size of 4.5 nm.

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Optical Bandgap Formation In Alingan Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska Oct 2000

Optical Bandgap Formation In Alingan Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence,photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices.

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Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur Aug 2000

Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur

Faculty Publications

We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO2/AlGaNheterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 …

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Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska Aug 2000

Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska

Faculty Publications

We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO2 surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10−23 A2/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.

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Gan-Algan Heterostructure Field-Effect Transistors Over Bulk Gan Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu Jun 2000

Gan-Algan Heterostructure Field-Effect Transistors Over Bulk Gan Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu

Faculty Publications

We report on AlGaN/GaN heterostructures and heterostructurefield-effect transistors(HFETs) fabricated on high-pressure-grown bulk GaN substrates. The 2delectron gas channel exhibits excellent electronic properties with room-temperature electron Hall mobility as high as μ=1650 cm2/V s combined with a very large electron sheet density ns≈1.4×1013 cm−2.The HFET devices demonstrated better linearity of transconductance and low gate leakage, especially at elevated temperatures. We also present the comparative study of high-current AlGaN/GaN HFETs(nsμ>2×1016 V−1 s−1) grown on bulk GaN, sapphire, and SiC substrates under the same conditions. We demonstrate that in …

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Accumulation Hole Layer In P-Gan/Algan Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan May 2000

Accumulation Hole Layer In P-Gan/Algan Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan

Faculty Publications

We present the results on piezoelectric and pyroelectricdoping in AlGaN-on-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structures with accumulation hole layer. Our results indicate that polarization charge can induce up to 5×1013 cm−2 holes at the AlGaN/GaN heterointerfaces. We show that the transition from three-dimensional (3D) to two-dimensional (2D) hole gas can be only achieved for hole sheet densities on the order of 1013 cm−2 or higher. At lower densities, only 3D-hole accumulation layer may exist. These results suggest that a piezoelectrically induced 2D-hole gas can be used for the reduction of the base spreading resistance …

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3d Outside Cell Interference Factor For An Air-Ground Cdma ‘Cellular’ System, David W. Matolak May 2000

3d Outside Cell Interference Factor For An Air-Ground Cdma ‘Cellular’ System, David W. Matolak

Faculty Publications

We compute the outside-cell interference factor of a code-division multiple-access (CDMA) system for a three-dimensional (3-D) air-to-ground (AG) "cellular-like" network consisting of a set of uniformly distributed ground base stations and airborne mobile users. The CDMA capacity is roughly inversely proportional to the outside-cell interference factor. It is shown that for the nearly free-space propagation environment of these systems, the outside-cell interference factor can be larger than that for terrestrial propagation models (as expected) and depends approximately logarithmically upon both the cell height and cell radius.

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Lattice And Energy Band Engineering In Alingan/Ga Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, Hans-Conrad Zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, R. Bicknell-Tassius Feb 2000

Lattice And Energy Band Engineering In Alingan/Ga Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, Hans-Conrad Zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, R. Bicknell-Tassius

Faculty Publications

We report on structural, optical, and electrical properties of AlxInyGa1−x−yNGaNheterostructures grown on sapphire and 6H–SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap,ΔEg, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔEg on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in …

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Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska Jan 2000

Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska

Faculty Publications

We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW)light-emitting diodes(LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor depositiongrowth procedure in selective areas defined by openings in a SiO2mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 …

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