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Articles 2071 - 2100 of 2359

Full-Text Articles in Engineering

Robust Software, Michael N. Huhns, Vance T. Holderfield Jan 2002

Robust Software, Michael N. Huhns, Vance T. Holderfield

Faculty Publications

Agents offer a convenient level of granularity at which to add redundancy a key factor in developing robust software. Blindly adding code introduces more errors, makes the system more complex, and renders it harder to understand. However, adding more code can make software better, if it is added in the right way. As this article describes, the key concepts appear to be redundancy and the appropriate granularity.

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Agent Societies: Magnitude And Duration, Michael N. Huhns Jan 2002

Agent Societies: Magnitude And Duration, Michael N. Huhns

Faculty Publications

If you only need agents to search the Web for cheap CDs, scalability is not an issue. The Web can support numerous agents if each acts independently. In short order, however, billions of embedded agents that sense their environment and interact with us and other agents will fill our world, making the human environment friendlier and more efficient. These agents will need not only scalable infrastructures and communication services, but also scalable social services encompassing ethics and laws. Research projects are under way around the world to develop and deploy such services. The author takes a look at the critical …

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Making Agents Secure On The Semantic Web, Csilla Farkas, Michael N. Huhns Jan 2002

Making Agents Secure On The Semantic Web, Csilla Farkas, Michael N. Huhns

Faculty Publications

Agents were designed to collaborate and share information. While highly desirable for interoperability, this feature is scary from the security perspective. Illegal inferences, supported by semantic Web technology and ontologies, might enable users to access unauthorized information. In addition to semantic associations and replicated data with different sensitivity, malicious agents could also exploit statistical inferences. Although each agent in a system might behave in a desired and secure way, their combined knowledge could be used to disclose sensitive data. The research community must therefore develop and implement techniques that allow control over released data. To answer the questions related to …

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Estimation Of Diffusion Coefficient Of Lithium In Carbon Using Ac Impedance Technique, Qingzhi Guo, Venkat R. Subramanian, John W. Weidner, Ralph E. White Jan 2002

Estimation Of Diffusion Coefficient Of Lithium In Carbon Using Ac Impedance Technique, Qingzhi Guo, Venkat R. Subramanian, John W. Weidner, Ralph E. White

Faculty Publications

The validity of estimating the solid phase diffusion coefficient, Ds, of a lithium intercalation electrode from impedance measurement by a modified electrochemical impedance spectroscopy (EIS) method is studied. A macroscopic porous electrode model and concentrated electrolyte theory are used to simulate the synthetic impedance data. The modified EIS method is applied for estimating Ds. The influence of parameters such as the exchange current density, radius of active material particle, solid phase conductivity, porosity, volume fraction of inert material, and thickness of the porous carbon intercalation electrode, the solution phase diffusion coefficient, and transference number, on the …

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Using Sputter Deposition To Increase Co Tolerance In A Proton-Exchange Membrane Fuel Cell, Andrew T. Haug, Ralph E. White, John W. Weidner, Wayne Huang, Steven Shi, Narender Rana, Stephan Grunow, Timothy C. Stoner, Alain E. Kaloyeros Jan 2002

Using Sputter Deposition To Increase Co Tolerance In A Proton-Exchange Membrane Fuel Cell, Andrew T. Haug, Ralph E. White, John W. Weidner, Wayne Huang, Steven Shi, Narender Rana, Stephan Grunow, Timothy C. Stoner, Alain E. Kaloyeros

Faculty Publications

Placing a layer of Ru atop a Pt anode increases the carbon monoxide tolerance of proton-exchange membrane fuel cells when oxygen is added to the fuel stream. Sputter-deposited Ru filter anodes composed of a single Ru layer and three Ru layers separated by Nafion-carbon ink, respectively, were compared to Pt, Pt:Ru alloy, and an ink-based Ru filter anodes. The amount of Pt in each anode was 0.15 mg/cm2 and the amount of Ru in each Ru-containing anode was 0.080 mg/cm2. For an anode feed consisting of hydrogen, 200 ppm CO, and 2% O2 (in the form …

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Increasing Proton Exchange Membrane Fuel Cell Catalyst Effectiveness Through Sputter Deposition, Andrew T. Haug, Ralph E. White, John W. Weidner, Wayne Huang, Steven Shi, Timothy Stoner, Narender Rana Jan 2002

Increasing Proton Exchange Membrane Fuel Cell Catalyst Effectiveness Through Sputter Deposition, Andrew T. Haug, Ralph E. White, John W. Weidner, Wayne Huang, Steven Shi, Timothy Stoner, Narender Rana

Faculty Publications

Sputter deposition has been investigated as a tool for manufacturing proton-exchange membrane fuel cell (PEMFC) electrodes with improved performance and catalyst utilization vs. ink-based electrodes. Sputter-depositing a single layer of Pt on the gas diffusion layer provided better performance (0.28 A/cm2 at 0.6 V) than sputtering the Pt directly onto a Nafion membrane (0.065 A/cm2 at 0.6 V) and equaled the performance of the baseline for an equivalent Pt loading. Sputter-depositing alternating layers of Pt and Nafion-carbon ink (NCI) onto the membrane did not increase the performance over the baseline as measured in amperes per centimeter squared due …

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Simulating Shape Changes During Electrodeposition: Primary And Secondary Current Distribution, Venkat R. Subramanian, Ralph E. White Jan 2002

Simulating Shape Changes During Electrodeposition: Primary And Secondary Current Distribution, Venkat R. Subramanian, Ralph E. White

Faculty Publications

A technique based on the analytical method of lines is presented for predicting shape changes during electrodeposition. The technique is presented for both primary and secondary current distributions. The method presented does not require iterations for nonlinear Butler-Volmer boundary conditions or changing electrode shapes. The technique is based on a semianalytical method developed earlier for predicting current distributions in electrochemical cells. This technique is attractive because it provides a symbolic solution for the Laplace equation, and hence requires less computation time to perform case studies.

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Electrochemical Filtering Of Co From Fuel-Cell Reformate, Balasubramanian Lakshmanan, Wayne Huang, John W. Weidner Jan 2002

Electrochemical Filtering Of Co From Fuel-Cell Reformate, Balasubramanian Lakshmanan, Wayne Huang, John W. Weidner

Faculty Publications

A proton exchange membrane fuel cell was used as a flow reactor for continuous preferential oxidation of CO over H2 from 1.0% CO in H2 under pulse-potential control. By varying the pulse profile ~e.g., on-time, off-time, pulse potential! the CO and H2 oxidation currents were varied independently. The improvement in faradaic selectivity between CO and H2 oxidation results from the promotion of CO adsorption during the off ~i.e., open-circuit! portion of the pulse. Therefore, during the on portion CO oxidation was preferred while the surface was covered with CO.

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Anodic Behavior Of Ti In Koh Solutions: Ellipsometric And Micro-Raman Spectroscopy Studies, A. Prusi, Lj. Arsov, Bala Haran, Branko N. Popov Jan 2002

Anodic Behavior Of Ti In Koh Solutions: Ellipsometric And Micro-Raman Spectroscopy Studies, A. Prusi, Lj. Arsov, Bala Haran, Branko N. Popov

Faculty Publications

Anodic formation of oxide films on titanium surfaces, in various concentrations of aqueous KOH solutions, have been studied using ellipsometry and micro-Raman spectroscopy. By in situ ellipsometric measurements the coefficient of film thickness growth and indexes of refraction of anodic oxide films have been determined. The voltage at which the oxide film breaks down is strongly dependent on the KOH concentration. Further, the solution concentration strongly influences the potential at which the oxide film is transformed from the amorphous state to crystalline form. Using micro-Raman spectroscopy four crystalline forms of titanium oxides, namely, anatase, brookite, corundum, and rutile, have been …

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Study Of Sn-Coated Graphite As Anode Material For Secondary Lithium-Ion Batteries, Basker Veeraraghavan, Anand Durairajan, Bala Haran, Branko N. Popov, Ronald Guidotti Jan 2002

Study Of Sn-Coated Graphite As Anode Material For Secondary Lithium-Ion Batteries, Basker Veeraraghavan, Anand Durairajan, Bala Haran, Branko N. Popov, Ronald Guidotti

Faculty Publications

Tin-graphite composites have been developed as an alternate anode material for Li-ion batteries using an autocatalytic deposition technique. The specific discharge capacity, coulombic efficiency, rate capability behavior, and cycle life of Sn-C composites has been studied using a variety of electrochemical methods. The amount of tin loading and the heating temperature have a significant effect on the composite performance. The synthesis conditions and Sn loading on graphite have been optimized to obtain the maximum reversible capacity for the composite electrode. Heating the composite converts it from amorphous to crystalline form. Apart from higher capacity, Sn-graphite composites possesses higher coulombic efficiency, …

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Modeling The Effects Of Electrode Composition And Pore Structure On The Performance Of Electrochemical Capacitors, Changqing Lin, Branko N. Popov, Harry J. Ploehn Jan 2002

Modeling The Effects Of Electrode Composition And Pore Structure On The Performance Of Electrochemical Capacitors, Changqing Lin, Branko N. Popov, Harry J. Ploehn

Faculty Publications

This work presents a mathematical model for charge/discharge of electrochemical capacitors that explicitly accounts for particle-packing effects in a composite electrochemical capacitor consisting of hydrous RuO2 nanoparticles dispersed within porous activated carbon. The model is also used to investigate the effect of nonuniform distributions of salt in the electrolyte phase of the electrode in the context of dilute solution theory. We use the model to compare the performance of capacitors with electrodes made from different activated carbons and to investigate the effects of varying carbon content and discharge current density. Even at low discharge current density, concentration polarization in …

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Modeling The Effects Of Electrode Composition And Pore Structure On The Performance Of Electrochemical Capacitors, Changqing Lin, Branko N. Popov, Harry J. Ploehn Jan 2002

Modeling The Effects Of Electrode Composition And Pore Structure On The Performance Of Electrochemical Capacitors, Changqing Lin, Branko N. Popov, Harry J. Ploehn

Faculty Publications

This work presents a mathematical model for charge/discharge of electrochemical capacitors that explicitly accounts for particle-packing effects in a composite electrochemical capacitor consisting of hydrous RuO2 nanoparticles dispersed within porous activated carbon. The model is also used to investigate the effect of nonuniform distributions of salt in the electrolyte phase of the electrode in the context of dilute solution theory. We use the model to compare the performance of capacitors with electrodes made from different activated carbons and to investigate the effects of varying carbon content and discharge current density. Even at low discharge current density, concentration polarization in …

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Localization Of Carriers And Polarization Effects In Quaternary Alingan Multiple Quantum Wells, E. Kuokstis, J. Zhang, M.-Y. Ryu, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur Dec 2001

Localization Of Carriers And Polarization Effects In Quaternary Alingan Multiple Quantum Wells, E. Kuokstis, J. Zhang, M.-Y. Ryu, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

We report on observing a long-wavelength band in low-temperature photoluminescence(PL)spectrum of quaternary Al0.22In0.02Ga0.76N/Al0.38In0.01Ga0.61N multiple quantum wells(MQWs), which were grown over sapphire substrates by a pulsed atomic-layer epitaxy technique. By comparing the excitation-power density and temperature dependence of the PLspectra of MQWs and bulk quaternary AlInGaN layers, we show this emission band to arise from the carrier and/or exciton localization at the quantum well interface disorders. PL data for other radiative transitions in MQWs indicate that excitation-dependent spectra position is determined by screening of the built-in electric field.

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Ultraviolet Light-Emitting Diodes At 340 Nm Using Quaternary Alingan Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur Dec 2001

Ultraviolet Light-Emitting Diodes At 340 Nm Using Quaternary Alingan Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption.

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A Dipolar Coupling Based Strategy For Simultaneous Resonance Assignment And Structure Determination Of Protein Backbones, Fang Tian, Homayoun Valafar, James H. Prestegard Nov 2001

A Dipolar Coupling Based Strategy For Simultaneous Resonance Assignment And Structure Determination Of Protein Backbones, Fang Tian, Homayoun Valafar, James H. Prestegard

Faculty Publications

A new approach for simultaneous protein backbone resonance assignment and structure determination by NMR is introduced. This approach relies on recent advances in high-resolution NMR spectroscopy that allow observation of anisotropic interactions, such as dipolar couplings, from proteins partially aligned in field ordered media. Residual dipolar couplings are used for both geometric information and a filter in the assembly of residues in a sequential manner. Experimental data were collected in less than one week on a small redox protein, rubredoxin, that was 15N enriched but not enriched above 1% natural abundance in 13C. Given the acceleration possible with partial 13C …

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Si3N4/Algan/Gan-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska Oct 2001

Si3N4/Algan/Gan-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, R. Gaska

Faculty Publications

We report on a metal–insulator–semiconductor heterostructurefield-effect transistor (MISHFET) using Si3N4 film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si3N4 MISHFET, the gate voltage amplitude required for current collapse is much higher …

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Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska Oct 2001

Induced Strain Mechanism Of Current Collapse In Algan/Gan Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectriccharge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer.

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Indium-Silicon Co-Doping Of High-Aluminum-Content Algan For Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska Sep 2001

Indium-Silicon Co-Doping Of High-Aluminum-Content Algan For Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm−3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrierphotodetectors with the cut-off wavelength of 278 nm.

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Pulsed Atomic Layer Epitaxy Of Quaternary Alingan Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur Aug 2001

Pulsed Atomic Layer Epitaxy Of Quaternary Alingan Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur

Faculty Publications

In this letter, we report on a material deposition scheme for quaternary AlxInyGa1−x–yN layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE approach allows accurate control of the quaternary layer composition and thickness by simply changing the number of aluminum,indium, and gallium pulses in a unit cell and the number of unit cell repeats. Using PALE, AlInGaN layers with Al mole fractions in excess of 40% and strong room-temperature photoluminescence peaks at 280 nm can easily be grown even at temperatures lower than 800 °C.

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Green Electrochemistry. Examples And Challenges, Michael A. Matthews Aug 2001

Green Electrochemistry. Examples And Challenges, Michael A. Matthews

Faculty Publications

Electrochemical methods have been proposed for synthesis of organic compounds, including conversion of CO2. Such methods may provide a basis for environmentally friendly and sustainable methods for chemical production. Nevertheless, electrochemical syntheses are not widely utilized. Several examples of ongoing research are presented that illustrate both the opportunities as well as the challenges associated with the utilization of electrochemistry for green chemical manufacturing.

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Passivity-Based Control Of Saturated Induction Motors, Levent U. Gökdere, Marwan A. Simaan, Charles W. Brice Aug 2001

Passivity-Based Control Of Saturated Induction Motors, Levent U. Gökdere, Marwan A. Simaan, Charles W. Brice

Faculty Publications

A passivity-based controller, which takes into account saturation of the magnetic material in the main flux path of the induction motor, is developed to provide close tracking of time-varying speed and flux trajectories in the high magnetic saturation regions. The proposed passivity based controller is experimentally verified. Also, a comparison between the controllers based on the saturated and nonsaturated magnetics is presented to demonstrate the benefit of the controller based on the saturated magnetics

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Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang Jul 2001

Low Frequency Noise In Gan Metal Semiconductor And Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang

Faculty Publications

The low frequency noise in GaNfield effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10−3 to 3×10−3.Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures.

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Increasing Power Density Of Lsgm-Based Solid Oxide Fuel Cells Using New Anode Materials, Kevin Huang, Jen-Hau Wan, John B. Goodenough Jun 2001

Increasing Power Density Of Lsgm-Based Solid Oxide Fuel Cells Using New Anode Materials, Kevin Huang, Jen-Hau Wan, John B. Goodenough

Faculty Publications

Chemical reactions between the superior perovskite oxide-ion conductor Sr- and Mg-doped LaGaO3 (LSGM), CeO2, and NiO have been studied by powder X-ray diffraction. The results showed that an extensive reactivity occurs as a result of La migration driven by a gradient of La chemical activity. La migration across the LSGM/electrode interfaces in a fuel cell leads to the formation of resistive phases at the interface, either LaSrGa3O7 or LaSrGaO4. Use of 40 mol % La2O3 -doped CeO2 as an interlayer between anode and electrolyte as well as in …

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Oxygen Permeation Through Cobalt-Containing Perovskites: Surface Oxygen Exchange Vs. Lattice Oxygen Diffusion, Kevin Huang, John B. Goodenough May 2001

Oxygen Permeation Through Cobalt-Containing Perovskites: Surface Oxygen Exchange Vs. Lattice Oxygen Diffusion, Kevin Huang, John B. Goodenough

Faculty Publications

The oxygen permeation fluxes from p′O2 to pnO2 (p′O2>pnO2) across cobalt-containing perovskite ceramic membranes La1−xSrxCoO3−δ and SrCo0.8Fe0.2O3−δ were measured by gas chromatography as functions of oxygen chemical potential gradient, temperature, thickness, and catalytic activity on the surface. Power indexes 0.5>n>0 for uncatalyzed La1−xSrxCoO3−δ and 1>n>0.5 for SrCo0.8Fe0.2O3−δ were obtained when JO2 vs. p′nO2−p'′nO2 …

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Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska Apr 2001

Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10−6 Ω cm2 and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.

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Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska Apr 2001

Mechanism Of Radio-Frequency Current Collapse In Gan-Algan Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

The mechanism of radio-frequency current collapse in GaN–AlGaN heterojunctionfield-effect transistors(HFETs) was investigated using a comparative study of HFET and metal–oxide–semiconductor HFET current–voltage (I–V) and transfer characteristics under dc and short-pulsed voltage biasing. Significant current collapse occurs when the gate voltage is pulsed, whereas under drain pulsing the I–V curves are close to those in steady-state conditions. Contrary to previous reports, we conclude that the transverse electric field across the wide-band-gap barrier layer separating the gate and the channel rather than the gate or surface leakage currents or high-field effects in the gate–drain spacing is responsible for the current collapse. We …

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Reduced-Temperature Solid Oxide Fuel Cells Fabricated By Screen Printing, Changrong Xia, Fanglin Chen, Meilin Liu Mar 2001

Reduced-Temperature Solid Oxide Fuel Cells Fabricated By Screen Printing, Changrong Xia, Fanglin Chen, Meilin Liu

Faculty Publications

Electrolyte films of samaria-doped ceria (SDC, Sm0.2Ce0.8O1.9) are fabricated onto porous NiO-SDC substrates by a screen printing technique. A cathode layer, consisting of Sm0.5Sr0.5CoO3 and 10 wt % SDC, is subsequently screen printed on the electrolyte to form a single cell, which is tested at temperatures from 400 to 600°C. When humidified (3% H2O) hydrogen or methane is used  as fuel and stationary air as oxidant, the maximum power densities are 188 (or 78) and 397 (or 304) mW/cm2 at 500 and 600°C, respectively. Impedance analysis …

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Bistable Operation Of A Two-Section 1.3-Mm Inas Quantum Dot Laser—Absorption Saturation And The Quantum Confined Stark Effect, Xiaodong Huang, A. Stintz, Hua Li, Audra Rice, G. T. Liu, L.F. Lester, Julian Cheng, K.J. Malloy Mar 2001

Bistable Operation Of A Two-Section 1.3-Mm Inas Quantum Dot Laser—Absorption Saturation And The Quantum Confined Stark Effect, Xiaodong Huang, A. Stintz, Hua Li, Audra Rice, G. T. Liu, L.F. Lester, Julian Cheng, K.J. Malloy

Faculty Publications

Room temperature, continuous-wave bistability was observed in oxide-confined, two-section, 1.3- m quantum-dot (QD) lasers with an integrated intracavity quantum-dot saturable absorber. The origin of the hysteresis and bistability were shown to be due to the nonlinear saturation of the QD absorption and the electroabsorption induced by the quantum confined Stark effect.

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Band-Edge Luminesce In Quaternary Alingan Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur Feb 2001

Band-Edge Luminesce In Quaternary Alingan Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

Operation of InGaNmultiple-quantum-well(MQW)light-emitting diodes(LEDs) with quaternary AlInGaN barriers at room and elevated temperatures is reported. The devices outperform conventional GaN/InGaN MQWLEDs, especially at high pump currents. From the measurements of quantum efficiency and total emitted power under dc and pulsed pumping, we show the emission mechanism for quaternary barrier MQWs to be predominantly linked to band-to-band transitions. This is in contrast to localized state emission observed for conventional InGaN/InGaN and GaN/InGaN LEDs. The band-to-band recombination with an increased quantum-well depth improves the high-current performance of the quaternary barrier MQWLEDs, making them attractive for high-power solid-state lighting applications.

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Highly Doped Thin-Channel Gan-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala Feb 2001

Highly Doped Thin-Channel Gan-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala

Faculty Publications

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors (MESFETs) grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5×1018 cm−3 were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and maximum oscillation frequencies, and reduced low frequency and microwave noise. The obtained results demonstrate that the dc and microwave performance characteristics of short-channel GaN MESFETs may be comparable to those for conventional AlGaN/GaN heterostructure FETs.

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