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Articles 2041 - 2070 of 2359

Full-Text Articles in Engineering

A Mathematical Model Of Oxide/Carbon Composite Electrode For Supercapacitors, Hansung Kim, Branko N. Popov Jan 2003

A Mathematical Model Of Oxide/Carbon Composite Electrode For Supercapacitors, Hansung Kim, Branko N. Popov

Faculty Publications

A pseudo two-dimensional model is developed for the general application of supercapacitors consisting of an oxide/carbon composite electrode. The model takes into account the diffusion of protons in the oxide particle by employing the method of superposition. RuO2/carbon system is modeled as a specific example. From the simulation data, it is found that the oxide particle size and proton diffusion coefficient have an enormous effect on the performance at high discharge rate due to the limitation of proton transport into RuO2 particles. With increasing carbon ratio, the porosity of electrode increases, which causes the potential drop in …

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A Novel Electrodeposition Process For Plating Zn-Ni-Cd Alloys, Hansung Kim, Branko N. Popov, Ken S. Chen Jan 2003

A Novel Electrodeposition Process For Plating Zn-Ni-Cd Alloys, Hansung Kim, Branko N. Popov, Ken S. Chen

Faculty Publications

Zn-Ni-Cd alloy was electrodeposited from an alkaline electrolytic bath under potentiostatic conditions. Bath analyses using a pH concentration diagram reveal that addition of a complexing agent is essential to maintain the bath stability. Introduction of a low concentration of CdSO4 reduces the anomalous nature of the Zn-Ni deposit. Deposits obtained from the electrolytic bath which contains 60 g/L of ZnSO4·7H2O, 40 g/L of NiSO4·6H2O, 1 g/L of CdSO4, and 80 g/L of (NH4)2SO4 in the presence of additives and ammonium hydroxide at pH 9.3 …

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Consensus Software: Robustness And Social Good, Michael N. Huhns Jan 2003

Consensus Software: Robustness And Social Good, Michael N. Huhns

Faculty Publications

In this column I explore some far-reaching issues of software development that lie at the intersection of robust software and sociopolitical systems. These two areas might seem unrelated-and most software developers would likely be horrified to have politics intrude on their programming efforts-but the intersection occurs through these premises: software systems administer and control much of our societal infrastructure; people would appreciate and better accept that control if they had input into the nature of the control and the systems' behavior; designers can make software systems more robust through redundancy, in which different versions of software components might cover for …

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Milliwatt Power Deep Ultraviolet Light-Emitting Diodes Over Sapphire With Emission At 278 Nm, J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, Grigory Simin, J. W. Yang, M. Asif Khan Dec 2002

Milliwatt Power Deep Ultraviolet Light-Emitting Diodes Over Sapphire With Emission At 278 Nm, J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, Grigory Simin, J. W. Yang, M. Asif Khan

Faculty Publications

We report on AlGaN multiple-quantum-well (MQW)-based deep ultraviolet light-emitting diodes over sapphire with peak emission at 278 nm. A new buffer layer growth process was used to reduce the number of defects and hence the nonradiative recombination. The improved material quality and carrier confinement resulted in pulsed powers as high as 3 mW at 278 nm and a significantly reduced deep-level-assisted long-wavelength emission.

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Polarization Effects In Photoluminescence Of C- And M-Plane Gan/Algan Multiple Quantum Wells, E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, Grigory Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, B. Chai Nov 2002

Polarization Effects In Photoluminescence Of C- And M-Plane Gan/Algan Multiple Quantum Wells, E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, Grigory Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, B. Chai

Faculty Publications

Polarizationeffects have been studied in GaN/AlGaN multiple quantum wells(MQWs) with different c-axis orientation by means of excitation-dependent photoluminescence(PL) analysis. Quantum structures were grown on [0001]-oriented sapphire substrates (C plane) and single-crystalline [11̄00]-oriented freestanding GaN (M plane) using the metalorganic chemical vapor deposition technique. Strong PL spectrum line blueshifts (up to 140 meV) which are correlated with the excitation intensity have been obtained for C-plane MQWs, whereas no shift has been observed for M-plane MQWs.Theoretical calculations and comparison with the PL data confirm that the built-in electric field for C-plane structures is much stronger than the field present for M-plane MQWs. …

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Distributions Of Nobel Metal Pd And Pt In Mesoporous Silica, J. Arbiol, A. Cabot, J. R. Morante, Fanglin Chen, Meilin Liu Oct 2002

Distributions Of Nobel Metal Pd And Pt In Mesoporous Silica, J. Arbiol, A. Cabot, J. R. Morante, Fanglin Chen, Meilin Liu

Faculty Publications

Mesoporous silicananostructures have been synthesized and loaded with Pd and Pt catalytic noble metals. It is found that Pd forms small nanoclusters (3–5 nm) on the surface of the mesoporous structure whereas Pt impregnation results in the inclusion of Pt nanostructures within the silica hexagonal pores (from nanoclusters to nanowires). It is observed that these materials have high catalyticproperties for CO–CH4CO–CH4CO–CH4 combustion, even in a thick film form. In particular, results indicate that the Pt and Pd dispersed in mesoporous silica are catalytically active as a selective filter for gas sensors.

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Distributions Of Noble Metal Pd And Pt In Mesoporous Silica, J. Arbiol, A. Cabot, J. R. Morante, Fanglin Chen, Meilin Liu Oct 2002

Distributions Of Noble Metal Pd And Pt In Mesoporous Silica, J. Arbiol, A. Cabot, J. R. Morante, Fanglin Chen, Meilin Liu

Faculty Publications

Mesoporous silica nanostructures have been synthesized and loaded with Pd and Pt catalytic noble metals. It is found that Pd forms small nanoclusters (3–5 nm) on the surface of the mesoporous structure whereas Pt impregnation results in the inclusion of Pt nanostructures within the silica hexagonal pores (from nanoclusters to nanowires). It is observed that these materials have high catalytic properties for CO–CH4 combustion, even in a thick film form. In particular, results indicate that the Pt and Pd dispersed in mesoporous silica are catalytically active as a selective filter for gas sensors.

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Gan Homoepitaxy On Freestanding (11̄00) Oriented Gan Substrates, C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, Grigory Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, Bruce Chai Oct 2002

Gan Homoepitaxy On Freestanding (11̄00) Oriented Gan Substrates, C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, Grigory Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, Bruce Chai

Faculty Publications

We report homoepitaxialGaNgrowth on freestanding (11̄00) oriented (M-plane GaN) substrates using low-pressure metalorganic chemical vapor deposition.Scanning electron microscopy,atomic-force microscopy, and photoluminescence were used to study the influence of growth conditions such as the V/III molar ratio and temperature on the surface morphology and optical properties of the epilayers. Optimized growth conditions led to high quality (11̄00) oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Since for III-N materials the (11̄00) crystal orientation is free from piezoelectric or spontaneous polarization electric fields, …

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Low-Temperature Operation Of Alfan Single-Quantum-Well Light-Emitting Diodes With Deep Ultraviolet Emission At 285 Nm, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan Oct 2002

Low-Temperature Operation Of Alfan Single-Quantum-Well Light-Emitting Diodes With Deep Ultraviolet Emission At 285 Nm, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan

Faculty Publications

We present a study of the electrical and optical characteristics of 285 nm emission deep ultraviolet light-emitting diodes(LED) at temperatures from 10 to 300 K. At low bias, our data show the tunneling carrier transport to be the dominant conduction mechanism. The room-temperature performance is shown to be limited mostly by poor electron confinement in the active region and a pronounced deep level assisted recombination but not by the hole injection into the active region. At temperatures below 100 K, the electroluminescence peak intensity increases by more than one order of magnitude indicating that with a proper device design and …

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Near-Band-Edge Photoluminescence Of Wurtzite-Type Aln, E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur, C. Rojo, L. Schowalter Sep 2002

Near-Band-Edge Photoluminescence Of Wurtzite-Type Aln, E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur, C. Rojo, L. Schowalter

Faculty Publications

Temperature-dependentphotoluminescence(PL)measurements were performed for A-plane and C-plane bulk AlN single crystals and epitaxial layers on sapphire. A strong near-band-edge (NBE) emission and deep-level luminescence were observed. At low excitations, the emission spectra are dominated by free and bound excitonic transitions and their LO-phonon replicas. At high excitations, the broadening and redshift of the NBE band is attributed to dense electron–hole plasma formation. The PL spectra differences of bulk single crystals and epilayers is explained by the electron–hole plasma expansion peculiarities.

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Low-Loss High Power Rf Switching Using Multifinger Algan/Gan Moshfets, Alexei Koudymov, Xuhong Hu, Kirill Simin, Grigory Simin, Mohammod Ali, Jinwei Yang, M. Asif Khan Aug 2002

Low-Loss High Power Rf Switching Using Multifinger Algan/Gan Moshfets, Alexei Koudymov, Xuhong Hu, Kirill Simin, Grigory Simin, Mohammod Ali, Jinwei Yang, M. Asif Khan

Faculty Publications

We demonstrate a novel RF switch based on a multifinger AlGan/GaN MOSHFET. Record high saturation current and breakdown voltage, extremely low gate leakage current and low gate capacitance of the III-N MOSHFETs make them excellent active elements for RF switching. Using a single element test circuit with 1-mm wide multifinger MOSHFET we achieved 0.27 dB insertion loss and more than 40 dB isolation. These parameters can be further improved by impedance matching and by using submicron gate devices. The maximum switching power extrapolated from the results for 1a/mm 100 mum wide device exceeds 40 W for a 1-mm wide 2-a/mm …

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Nonresonant Detection Of Terahertz Radiation In Field Effect Transistors, W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, Grigory Simin, X. Hu, M. Asif Khan, C. A. Saylor, L. C. Brunel Jun 2002

Nonresonant Detection Of Terahertz Radiation In Field Effect Transistors, W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, Grigory Simin, X. Hu, M. Asif Khan, C. A. Saylor, L. C. Brunel

Faculty Publications

We present an experimental and theoretical study of nonresonant detection of subterahertz radiation in GaAs/AlGaAs and GaN/AlGaN heterostructurefield effect transistors. The experiments were performed in a wide range of temperatures (8–300 K) and for frequencies ranging from 100 to 600 GHz. The photoresponse measured as a function of the gate voltage exhibited a maximum near the threshold voltage. The results were interpreted using a theoretical model that shows that the maximum in photoresponse can be explained by the combined effect of exponential decrease of the electron density and the gate leakage current.

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On Localized Control In Qos Routing, Srihari Nelakuditi, Srivatsan Varadarajan, Zhi-Li Zhang Jun 2002

On Localized Control In Qos Routing, Srihari Nelakuditi, Srivatsan Varadarajan, Zhi-Li Zhang

Faculty Publications

In this note, we study several issues in the design of localized quality-of-service (QoS) routing schemes that make routing decisions based on locally collected QoS state information (i.e., there is no network-wide information exchange among routers). In particular, we investigate the granularity of local QoS state information and its impact on the design of localized QoS routing schemes from a theoretical perspective. We develop two theoretical models for studying localized proportional routing: one using the link-level information and the other using path-level information. We compare the performance of these localized proportional routing models with that of a global optimal proportional …

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A Localized Adaptive Proportioning Approach To Qos Routing, Srihari Nelakuditi, Zhi-Li Zhang Jun 2002

A Localized Adaptive Proportioning Approach To Qos Routing, Srihari Nelakuditi, Zhi-Li Zhang

Faculty Publications

In QoS routing, paths for flows are selected based on knowledge of resource availability at network nodes and the QoS requirements of flows. Several QoS routing schemes have been proposed that differ in the way they gather information about the network state and select paths based on this information. We broadly categorize these schemes into best path routing and proportional routing. The best path routing schemes gather global network state information and always select the best path for an incoming I-low,based on this global view. It has been shown that best path routing schemes require frequent exchange of network state, …

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Dynamic Multiphysics Model For Solar Array, Shengyi Liu, Roger A. Dougal Jun 2002

Dynamic Multiphysics Model For Solar Array, Shengyi Liu, Roger A. Dougal

Faculty Publications

An approach to model the solar cell system with coupled multiphysics equations (photovoltaic, electro-thermal, direct heating and cooling processes) within the context of the resistive-companion method in the Virtual Test Bed computational environment is presented. Appropriate across and through variables are defined for the thermal terminal of the system so that temperature is properly represented as a state variable, rather than as a parameter of the system. This allows enforcement of the system power conservation through all terminals, and allows simultaneous solutions for both the electrical potentials and the system temperature. The thermal port built accordingly can be used for …

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Time-Resolved Photoluminescence Of Quaternary Alingan-Based Multiple Quantum Wells, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, G. G. Sim, P. W. Yu May 2002

Time-Resolved Photoluminescence Of Quaternary Alingan-Based Multiple Quantum Wells, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, G. G. Sim, P. W. Yu

Faculty Publications

Time-resolvedphotoluminescence(PL)dynamics has been studied in AlInGaN/AlInGaN multiple quantum wells(MQWs) grown by a pulsed metalorganic chemical vapor deposition (PMOCVD) procedure. The PL decay kinetics was found to be sensitive to the emission energy and temperature. The PL decay time increases with decreasing emission energy, which is a characteristic of localized carrier/exciton recombination due to alloy fluctuations. Its temperature dependence shows radiative recombination to be the dominant process at low temperatures, indicating a high quality of PMOCVD grown quaternary AlInGaN MQWs and establishing them as promising structures for the active region of deep ultraviolet light emitting diodes.

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Luminescence Mechanisms In Quaternary AlXInYGa1-X-YN Materials, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan May 2002

Luminescence Mechanisms In Quaternary AlXInYGa1-X-YN Materials, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan

Faculty Publications

Low-temperature photoluminescence investigations have been carried out in the quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by pulsedmetalorganic chemical-vapor deposition (PMOCVD). With increasing excitation power density, the emission peaks in both AlInGaN epilayers and MQWs show a strong blueshift and theirlinewidths increase. The luminescence of the samples grown by PMOCVD is attributed to recombination of carriers/excitons localized at band-tail states. We also demonstrate theluminescence properties of AlInGaN and AlGaN materials grown by a pulsed atomic-layerepitaxy and conventional MOCVD, respectively.

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Nanofatigue Studies Of Ultrathin Hard Carbon Overcoats Used In Magnetic Storage Devices, Xiaodong Li, Bharat Bhushan May 2002

Nanofatigue Studies Of Ultrathin Hard Carbon Overcoats Used In Magnetic Storage Devices, Xiaodong Li, Bharat Bhushan

Faculty Publications

A technique to perform nanofatigue experiments was developed. This technique utilizes a depth-sensing nanoindenter with harmonic force. The nanofatigue behavior of 20 nm thick amorphous carbon coatings was studied. The contact stiffness was monitored continuously throughout the test. The abrupt decrease in the contact stiffness indicates fatigue damage has occurred. The critical load amplitude, below which no fatigue damage occurs, was identified. It was found that the filtered cathodic arc coating exhibits longer fatigue life than a direct ion beam coating. Failure mechanisms of the coatings during fatigue are also discussed in conjunction with the hardness,elastic modulus, and fracture toughness, …

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Crack-Free Thick Algan Grown On Sapphire Using Aln/Algan Superlattices For Strain Management, J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan May 2002

Crack-Free Thick Algan Grown On Sapphire Using Aln/Algan Superlattices For Strain Management, J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan

Faculty Publications

We report on an AlN/AlGaN superlattice approach to grow high-Al-content thick n+-AlGaNlayers over c-plane sapphire substrates. Insertion of a set of AlN/AlGaN superlattices is shown to significantly reduce the biaxial tensile strain, thereby resulting in 3-μm-thick, crack-free Al0.2Ga0.8N layers. These high-quality, low-sheet-resistive layers are of key importance to avoid current crowding in quaternary AlInGaN multiple-quantum-well deep-ultraviolet light-emitting diodes over sapphire substrates.

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Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska Apr 2002

Maximum Current In Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, R. Gaska

Faculty Publications

We present experimental and modeling results on the gate-length dependence of the maximum current that can be achieved in GaN-based heterostructurefield-effect transistors(HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs). Our results show that the factor limiting the maximum current in the HFETs is the forward gate leakage current. In the MOSHFETs, the gate leakage current is suppressed and the overflow of the two dimensional electron gas into the AlGaN barrier region becomes the most important factor limiting the maximum current. Therefore, the maximum current is substantially higher in MOSHFETs than in HFETs. The measured maximum current increases with a decrease in the gate …

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Two Mechanisms Of Blueshift Of Edge Emission In Ingan-Based Epilayers And Multiple Quantum Wells, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur Feb 2002

Two Mechanisms Of Blueshift Of Edge Emission In Ingan-Based Epilayers And Multiple Quantum Wells, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

We present the results of a comparative photoluminescence(PL) study of GaN and InGaN-based epilayers, and InGaN/GaN multiple quantum wells(MQWs). Room-temperature PL spectra were measured for a very broad range of optical excitation from 10 mW/cm2 up to 1 MW/cm2. In contrast to GaN epilayers, all In-containing samples exhibited an excitation-induced blueshift of the peak emission. In addition, the blueshift of the emission in the InGaN epilayers with the same composition as the quantum well was significantly smaller. The comparison of the blueshift in the “bulk” InGaN and in the MQWs allowed us to separate two different mechanisms …

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Effect Of Residual Thermal Stresses On Fracture Behavior And Mechanical Properties Of Al Sub 2 O Sub 3/Ni Cermets, Guo Jin Li, Da Ming Chen, Xiao Xian Huang, Jing Kun Guo Jan 2002

Effect Of Residual Thermal Stresses On Fracture Behavior And Mechanical Properties Of Al Sub 2 O Sub 3/Ni Cermets, Guo Jin Li, Da Ming Chen, Xiao Xian Huang, Jing Kun Guo

Faculty Publications

Effect of residual thermal stresses on fracture behavior and mechanical properties of Al2O3/Ni cermets was qualitatively explained by using theory on residual thermal stresses. When Ni particles are located within Al2O3 grains or Ni content is relatively low, tensile stresses are exerted at Al2O3-Al2O3 grain boundary. While fracturing, intergranular fracture is easily produced. When Ni particles are dispersed at Al2O3 grain boundary or Ni content is relatively high, compressive stresses are exerted at Al2O3-Al2O3grain boundary. …

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Water Transport In Polymer Electrolyte Membrane Electrolyzers Used To Recycle Anhydrous Hcl: I. Characterization Of Diffusion And Electro-Osmotic Drag, Sathya Motupally, Aaron J. Becker, John W. Weidner Jan 2002

Water Transport In Polymer Electrolyte Membrane Electrolyzers Used To Recycle Anhydrous Hcl: I. Characterization Of Diffusion And Electro-Osmotic Drag, Sathya Motupally, Aaron J. Becker, John W. Weidner

Faculty Publications

In this paper, diffusion and electro-osmotic drag of water across Nafion® membranes in the presence of HCl are characterized. For all the measurements, one side of the Nafion membrane was in contact with liquid water and the other side with gaseous anhydrous HCl. To characterize diffusion of water, the open-circuit flux of water across a catalyst-coated Nafion 115 membrane was measured as a function of HCl flow rate and temperature at a constant cell pressure of 1 atm. Due to the nature of varying driving force for diffusion as a function of HCl flow rate, the experimental data was analyzed …

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Development Of A Novel Co Tolerant Proton Exchange Membrane Fuel Cell Anode, Andrew T. Haug, Ralph E. White, John W. Weidner, Wayne Huang Jan 2002

Development Of A Novel Co Tolerant Proton Exchange Membrane Fuel Cell Anode, Andrew T. Haug, Ralph E. White, John W. Weidner, Wayne Huang

Faculty Publications

Typically Pt is alloyed with metals such as Ru, Sn, or Mo to provide a more CO-tolerant, high-performance proton exchange membrane fuel cell (PEMFC) anode. In this work, a layer of carbon-supported Ru is placed between the Pt catalyst and the anode flow field to form a filter. When oxygen is added to the fuel stream, it was predicted that the slow H2 kinetics of Ru in this filter would become an advantage compared to Pt and Pt:Ru alloy anodes, allowing a greater percentage of O2 to oxidize adsorbed CO to CO2. With an anode feed …

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Studies On Capacity Fade Of Spinel-Based Li-Ion Batteries, Ramadass Premanand, Anand Durairajan, Bala Haran, Ralph E. White, Branko N. Popov Jan 2002

Studies On Capacity Fade Of Spinel-Based Li-Ion Batteries, Ramadass Premanand, Anand Durairajan, Bala Haran, Ralph E. White, Branko N. Popov

Faculty Publications

The performance of Cell-Batt® Li-ion cells using nonstoichiometric spinel as the positive electrode material has been studied at different charging rates. The capacity of the cell was optimized based on varying the charging current and the end potential. Subsequent to this, the capacity fade of these batteries was studied at different charge currents. During cycling, cells were opened at intermittent cycles and extensive material and electrochemical characterization was done on the active material at both electrodes. For all charge currents, the resistance of both the electrodes does not vary significantly with cycling. This result is in contrast with cells …

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Modeling The Effects Of Ion Association On Alternating Current Impedance Of Solid Polymer Electrolytes, Changqing Lin, Ralph E. White, Harry J. Ploehn Jan 2002

Modeling The Effects Of Ion Association On Alternating Current Impedance Of Solid Polymer Electrolytes, Changqing Lin, Ralph E. White, Harry J. Ploehn

Faculty Publications

This work presents a rigorous continuum model describing the transport of ions and associated ion pairs in solid polymer electrolytes subjected to small amplitude alternating current (ac) excitation. The model treats ion association as a reversible reaction among ions and ion pairs. Dimensionless governing equations are developed from component mass balances, flux equations based on dilute solution theory, and the Poisson equation. Assuming reversible electrode reactions and electroneutrality, the model equations have an analytical solution. Further simplifications are possible in limiting cases (weak and strong association, zero and infinite frequency excitation), giving expressions consistent with previously published models. We use …

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Information Domain Modeling Of Emergent Phenomena, Ron Fulbright Jan 2002

Information Domain Modeling Of Emergent Phenomena, Ron Fulbright

Theses and Dissertations

Study in fields such as distributed artificial intelligence (DAI), decentralized artificial intelligence (DzAI), parallel artificial intelligence (PAl), multiagent systems (MAS), computer supported cooperative work (CSCW), artificial life (AL), and complex adaptive systems (CAS) is concerned with the cooperation, coordination, communication, and coherence of multiple agents working together to achieve a common goal. The notion that the ability of a collective can exceed the sum of the individuals is a fundamental concept and a generally accepted truth. However, no general theoretical explanation exists as to why this could or should be the case. This dissertation explores such an explanation by considering …

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Trusted Autonomy, Michael N. Huhns, Duncan A. Buell Jan 2002

Trusted Autonomy, Michael N. Huhns, Duncan A. Buell

Faculty Publications

We describe how agents are the right building blocks for constructing trustworthy systems. Robust software and trusted autonomy represent the future for agent technology and software engineering.

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Weaving A Computing Fabric, Michael N. Huhns, Larry M. Stevens, John W. Keele, Jim E. Wray, Warren M. Snelling, Greg P. Harhay, Randy R. Bradley Jan 2002

Weaving A Computing Fabric, Michael N. Huhns, Larry M. Stevens, John W. Keele, Jim E. Wray, Warren M. Snelling, Greg P. Harhay, Randy R. Bradley

Faculty Publications

As sources of information relevant to a particular domain proliferate, we need a methodology for locating, aggregating, relating, fusing, reconciling, and presenting information to users. Interoperability thus must occur not only among the information, but also among the different software applications that process it. Given the large number of potential sources and applications, interoperability becomes an extremely large problem for which manual solutions are impractical. A combination of software agents and ontologies can supply the necessary methodology for interoperability.

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Agents As Web Services, Michael N. Huhns Jan 2002

Agents As Web Services, Michael N. Huhns

Faculty Publications

Web services are extremely flexible. Most advantageously, a developer of Web services need not know who or what will use the services being provided. The paper discusses current standards for Web services, directory services and the Semantic Web. It considers how agents extend Web services in several important ways.

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