Open Access. Powered by Scholars. Published by Universities.®

Physics Commons™

Open Access. Powered by Scholars. Published by Universities.®

Condensed Matter Physics

PDF

Series

Institution
Keyword
Publication Year
Publication

Articles 1111 - 1133 of 1133

Full-Text Articles in Physics

Raman Spectroscopy Of Carbon Materials, Jr Dennison, Mark Holtz, Greg Swain Jan 1996

Raman Spectroscopy Of Carbon Materials, Jr Dennison, Mark Holtz, Greg Swain

Journal Articles

Use of carbon materials is no longer limited to diamond jewelry or graphite pencils and lubricants. The last decade has witnessed an explosion of technological applications driven by the development of fabrication methods and the discovery of several new classes of pure carbon. Structural diversity exhibited by the carbon atoms, from local chemical order to long-range crystalline order, is key to understanding their physical and chemical properties and in future materials development. This article summarizes the use of Raman spectroscopy as a principal tool to investigate the vibrational dynamics of carbon materials and to provide indirect structural characterization of their …

Go to article

Application Of (E,2e) Spectroscopy To The Electronic Structure Of Valence Electrons In Crystalline And Amorphous Solids, Jr Dennison, A. L. Ritter Jan 1996

Application Of (E,2e) Spectroscopy To The Electronic Structure Of Valence Electrons In Crystalline And Amorphous Solids, Jr Dennison, A. L. Ritter

Journal Articles

This review presents theoretical and experimental aspects of (e,2e) spectroscopy specific to the study of crystalline and amorphous solids. The cross section for (e,2e) scattering is proportional to the spectral momentum density of the ejected electron under certain approximations. The theoretical framework for interpreting (e,2e) measurements is summarized here and general properties of the spectral momentum density of solids are discussed. Different designs of the (e,2e) spectrometer are described and sample preparation techniques are briefly reviewed. A summary of recent (e,2e) experiments on the electronic structure of valence electrons in graphite, ion sputtered and evaporated amorphous carbon, and aluminum-aluminum oxide …

Go to article

Visible Luminescence From Single Crystal‐Silicon Quantum Wells, Peter N. Saeta, A. C. Gallagher May 1995

Visible Luminescence From Single Crystal‐Silicon Quantum Wells, Peter N. Saeta, A. C. Gallagher

All HMC Faculty Publications and Research

Single crystal‐silicon quantum wells with SiO2 barriers have been grown from SIMOX silicon‐on‐insulator substrates. Photoluminescence in the red and near‐infrared is observed for average well width <8 >nm, with peak signal for 2‐nm average width. The luminescence spectrum is independent of well width for SiO2 barriers, but shifts 0.3 eV to higher energy upon removal of the upper oxide layer with HF. Both results suggest the importance of radiation from surface states.

Go to article

Characterization Of Piezoceramic Crosses With Large Range Scanning Capability And Applications For Low Temperature Scanning Tunneling Microscopy, J. A. Helfrich, Shireen Adenwalla, J. B. Ketterson, G. A. Zhitomirsky Jan 1995

Characterization Of Piezoceramic Crosses With Large Range Scanning Capability And Applications For Low Temperature Scanning Tunneling Microscopy, J. A. Helfrich, Shireen Adenwalla, J. B. Ketterson, G. A. Zhitomirsky

Shireen Adenwalla Papers

We have developed a large amplitude piezoceramic scanner which should have numerous applications. Scanning tunneling microscopy (STM) and other scanning probe microscopies predominantly use piezoceramics for the scanning elements. Similarly adaptive optics, high resolution lithography, and micromanipulators are other examples of research which regularly utilize piezoceramic scanners. We present a new geometry for a piezoceramic scanner which allows for both high resolution (~nanometers) and large amplitude (~400 µm) displacements. The cross-shaped geometry makes it possible to produce extremely long pieces with very high tolerances. We have shown its effectiveness by using it as the major component of a low temperature …

Go to article

Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu Jan 1995

Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu

Electrical & Computer Engineering Faculty Publications

Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.

Go to article

Nonequilibrium Dynamic Conductivity Of Superconductors: An Exploitable Basis For High Energy Resolution X-Ray Detectors, Armen Gulian, D. Van Vechten Jan 1995

Nonequilibrium Dynamic Conductivity Of Superconductors: An Exploitable Basis For High Energy Resolution X-Ray Detectors, Armen Gulian, D. Van Vechten

Mathematics, Physics, and Computer Science Faculty Articles and Research

A new design for high‐energy radiation/particle detectors is presented. The nonequilibrium response of a superconductor to the absorption of the incident quanta is sensed by electromagnetic measurements of the altered dynamic conductivity. Microwave absorption may be used to amplify the signal. Such a detector will provide better energy resolution than semiconducting charge‐collection devices once the statistical resolution limit is reached.

Go to article

Reflection High-Energy Electron-Diffraction Study Of Surface Disorder And Anomalous Expansion Of Pb(100), D. Tang, H. E. Elsayed-Ali Jan 1994

Reflection High-Energy Electron-Diffraction Study Of Surface Disorder And Anomalous Expansion Of Pb(100), D. Tang, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The temperature-dependent surface structural behavior of Pb(100) is studied using reflection high-energy electron diffraction. Anomalous surface expansion for temperatures between room temperature to about 500 K is observed. A high density of surface vacancies appears at temperatures above ~ 500 K. © 1994 The American Physical Society.

Go to article

Short Terahertz Pulses From Semiconductor Surfaces: The Importance Of Bulk Difference‐Frequency Mixing, Peter N. Saeta, Benjamin I. Greene, Shun Lien Chuang Dec 1993

Short Terahertz Pulses From Semiconductor Surfaces: The Importance Of Bulk Difference‐Frequency Mixing, Peter N. Saeta, Benjamin I. Greene, Shun Lien Chuang

All HMC Faculty Publications and Research

The crystallographic orientation dependence of the far‐infrared (FIR) light generated at the (001) surface of a zincblende semiconductor is shown to derive principally from bulk difference‐frequency mixing. A strong modulation is observed for 1‐GW/cm2 pulses on InP, which demonstrates that the radiated FIR wave produced by bulk optical rectification is comparable to that generated by the transport of photoinjected carriers. Using the bulk rectification light as a clock, we show that more than 95% of the light produced from an InP (111) crystal by 100‐fs, 100‐μJ pulses is generated in a time shorter than the excitation pulse.

Go to article

Primary Relaxation Processes At The Band Edge Of Sio₂, Peter N. Saeta, Benjamin I. Greene Jun 1993

Primary Relaxation Processes At The Band Edge Of Sio₂, Peter N. Saeta, Benjamin I. Greene

All HMC Faculty Publications and Research

The kinetics of photoinduced defect formation in high-purity silicas has been studied by femtosecond transient absorption spectroscopy in the visible and ultraviolet. Band edge two-photon excitation produces singlet excitons which decay in 0.25 ps into defects with the absorption spectra of nonbridging oxygen hole centers (≡Si-O⋅) and silicon E’ centers (≡Si⋅). We identify these defect pairs with the self-trapped triplet exciton and the 0.25 ps decay with the motion of the photoexcited oxygen atom. Similar results were obtained with both crystalline and amorphous silica samples.

Go to article

Hysteresis And Anchoring Energy In Ferroelectric Liquid Crystals, Yuri Panarin Jan 1993

Hysteresis And Anchoring Energy In Ferroelectric Liquid Crystals, Yuri Panarin

Articles

The frequency dispersion of the coercive force of Ferroelectric Liquid Crystals (FLC) cells has been detected and examined in the range of infralow (lower than 0.1 Hz) frequencies. To clarify the low-frequency dispersion, the model has been suggested, based on the arrangement of free charges and well describing the experimental curves. The method for determination of the energy of FLC anchoring at the surface, developed on the basis of the static hysteresis loop, has been proposed. The dependence of bistability and the anchoring energy upon the orientant layer thickness has experimentally been investigated.

Go to article

Direct Measurements Of The Transport Of Nonequilibrium Electrons In Gold Films With Different Crystal Structures, T. Juhasz, H. E. Elsayed-Ali, G. O. Smith, C. Suárez, W. E. Bron Jan 1993

Direct Measurements Of The Transport Of Nonequilibrium Electrons In Gold Films With Different Crystal Structures, T. Juhasz, H. E. Elsayed-Ali, G. O. Smith, C. Suárez, W. E. Bron

Electrical & Computer Engineering Faculty Publications

The transport of femtosecond-laser-excited nonequilibrium electrons across polycrystalline and single-crystalline gold films has been investigated through time-of-flight measurements. The thicknesses of the films range from 25 to 400 nm. Ballistic electrons as well as electrons interacting with other electrons and/or with the lattice have been observed. The ballistic component dominates the transport in the thinner films, whereas the interactive transport mechanism is dominant at the upper end of the thickness range. A slower effective velocity of the interactive component is observed in the polycrystalline samples, and is assumed to arise from the presence of grain boundaries. The reflection coefficient of …

Go to article

Direct Picosecond Measurement Of Photoinduced Cooper Pair Breaking In Lead, John F. Federici, Benjamin I. Greene, Peter N. Saeta, Douglas R. Dykaar, F. Sharifi, R. C. Dynes Nov 1992

Direct Picosecond Measurement Of Photoinduced Cooper Pair Breaking In Lead, John F. Federici, Benjamin I. Greene, Peter N. Saeta, Douglas R. Dykaar, F. Sharifi, R. C. Dynes

All HMC Faculty Publications and Research

We report on a direct kinetic measurement of Cooper-pair breaking in superconducting lead. A 100-fs pulse of visible light was used to excite a thin-film lead sample, while the Cooper-pair density was optically probed using an ultrashort pulse of broadband far-infrared radiation. Subsequent to the absorption of the visible light, a rapid (ps) change in the far-infrared optical transmission was observed, corresponding to the breaking of Cooper pairs and the collapse of the superconducting gap.

Go to article

Intervalley Scattering In Gaas And Inp Probed By Pulsed Far‐Infrared Transmission Spectroscopy, Peter N. Saeta, John F. Federici, Benjamin I. Greene, Douglas R. Dykaar Mar 1992

Intervalley Scattering In Gaas And Inp Probed By Pulsed Far‐Infrared Transmission Spectroscopy, Peter N. Saeta, John F. Federici, Benjamin I. Greene, Douglas R. Dykaar

All HMC Faculty Publications and Research

The dynamics of photoexcited electrons in GaAs and InP were studied using the transmission of 200‐fs pulses of far‐infrared radiation in the spectral range 15–100 cm−1. Kinetic traces of the infrared transmission as a function of delay between optical excitation and infrared probe show a probe‐limited decrease in transmission followed by a more gradual (0.7–2 ps) drop to a steady value, consistent with the slow return of electrons from high‐mass satellite valleys. Infrared transmission spectra, analyzed in the context of a Drude model, reveal density‐dependent electron mobilities 3–4 times below equilibrium n‐doped values. Electron‐hole collisions likely account …

Go to article

Ultrahigh Vacuum Chamber For Synchrotron X-Ray Diffraction From Films Adsorbed On Single-Crystal Surfaces, Jr Dennison, S. K. Wang, S. N. Ehrlich Jan 1992

Ultrahigh Vacuum Chamber For Synchrotron X-Ray Diffraction From Films Adsorbed On Single-Crystal Surfaces, Jr Dennison, S. K. Wang, S. N. Ehrlich

Journal Articles

An ultrahigh vacuum chamber has been developed for structural analysis of adsorbed films and single-crystal surfaces using synchrotron x-ray diffraction. It is particularly well suited for investigations of physisorbed and other weakly bound films. The chamber is small enough to transport and mount directly on a standard four-axis diffractometer and can also be used independently of the x-ray diffractometer. A low-current, pulse-counting, low-energy electron diffraction/Auger spectroscopy system with a position-sensitive detector enables in situ characterization of the film and substrate while the sample is located at the x-ray scattering position. A closed-cycle He refrigerator and electron bombardment heater provide controlled …

Go to article

Optical Rectification At Semiconductor Surfaces, Shun Lien Chuang, Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, Anthony F. J. Levi Jan 1992

Optical Rectification At Semiconductor Surfaces, Shun Lien Chuang, Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, Anthony F. J. Levi

All HMC Faculty Publications and Research

We show that far-infrared radiation can be generated in the depletion field near semiconductor surfaces via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This mechanism is conceptually different from those previously proposed and accounts for many recent experimental observations.

Go to article

Ultrafast Electronic Disordering During Femtosecond Laser Melting Of Gaas, Peter N. Saeta, J.-K. Wang, Y. Siegal, N. Bloembergen, E. Mazur Aug 1991

Ultrafast Electronic Disordering During Femtosecond Laser Melting Of Gaas, Peter N. Saeta, J.-K. Wang, Y. Siegal, N. Bloembergen, E. Mazur

All HMC Faculty Publications and Research

We have observed an ultrarapid electronic phase transformation to a centrosymmetric electronic state during laser excitation of GaAs with intense femtosecond pulses. Reflection second-harmonic intensity from the upper 90 atomic layers vanishes within 100 fs; reflectivity rises within 0.5 ps to a steady value characteristic of a metallic molten phase, long before phonon emission can heat the lattice to the melting temperature.

Go to article

Selective Decay And Coherent Vortices In Two-Dimensional Incompressible Turbulence, William H. Matthaeus, W. Troy Stribling, Daniel Martinez, Sean Oughton, David Montgomery May 1991

Selective Decay And Coherent Vortices In Two-Dimensional Incompressible Turbulence, William H. Matthaeus, W. Troy Stribling, Daniel Martinez, Sean Oughton, David Montgomery

Dartmouth Scholarship

Numerical solution of two-dimensional incompressible hydrodynamics shows that states of a near-minimal ratio of enstrophy to energy can be attained in times short compared with the flow decay time, confirming the simplest turbulent selective decay conjecture, and suggesting that coherent vortex structures do not terminate nonlinear processes. After all possible vortex mergers occur, the vorticity attains a particlelike character, suggested by the late-time similarity of the streamlines to Ewald potential contours.

Go to article

Fresnel And Fraunhofer Diffraction: Development Of An Advanced Laboratory Experiment, Jeff Adams Dec 1990

Fresnel And Fraunhofer Diffraction: Development Of An Advanced Laboratory Experiment, Jeff Adams

Senior Theses and Projects

The purpose of this lab is to help the student become more familiar with, or get a better feel for what is actually occurring, when observing the effects of double slit diffraction patterns. In most sophomore labs dealing with double slit diffraction, the student simply determines the diffraction angle, and slit spacing, from marking the positions of the maxima on the screen. No attempt is made to measure the relative intensity of the interference pattern, and see how the experimental data compare with the theory of interference and diffraction. In an attempt to further clarify this phenomena, we will attempt …

Go to article

Γ To X Transport Of Photoexcited Electrons In Type Ii Gaas/Alas Multiple Quantum Well Structures, Peter N. Saeta, John F. Federici, R. J. Fischer, Benjamin I. Greene, L. Pfeiffer, R. C. Spitzer, B. A. Wilson Apr 1989

Γ To X Transport Of Photoexcited Electrons In Type Ii Gaas/Alas Multiple Quantum Well Structures, Peter N. Saeta, John F. Federici, R. J. Fischer, Benjamin I. Greene, L. Pfeiffer, R. C. Spitzer, B. A. Wilson

All HMC Faculty Publications and Research

We report novel femtosecond time‐resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8‐ and 11‐monolayer‐thick GaAs samples, respectively.

Go to article

Continuum Model Of Thin-Film Deposition And Growth, Andrew J. Bernoff, Seth Lichter Jan 1989

Continuum Model Of Thin-Film Deposition And Growth, Andrew J. Bernoff, Seth Lichter

All HMC Faculty Publications and Research

A continuum theory for the deposition and growth of solid films is presented. The theory is developed in a coordinate-independent manner and so incorporates the fully nonlinear physics. The evolution of the film is modeled in three steps. First, the adsorption of atoms in the incident beam is modeled as a ballistic process. Second, the random motion of the adatoms is treated as a diffusive process. Finally, sticking of adatoms to the film occurs as a Poisson process. The resulting system of differential equations is examined in several parameter limits. The diffusively dominated limit appears similar to zone 1 of …

Go to article

Spectral Momentum Density From Graphite From (E,2e) Spectroscopy: Comparison With First Principles Calculations, Chao Gao, A. L. Ritter, Jr Dennison, N. A. W. Holzwarth Jan 1988

Spectral Momentum Density From Graphite From (E,2e) Spectroscopy: Comparison With First Principles Calculations, Chao Gao, A. L. Ritter, Jr Dennison, N. A. W. Holzwarth

Journal Articles

We have measured the spectral momentum density p(E,q) of graphite by (e,2e) spectroscopy for momentum parallel and perpendicular to the crystal c axis. In the independent-electron approximation, p(E,q) = ΣG |Uk(G)|2 δ(q-k-G)δ(E-E(k)) where the one-electron wave function is Ψk(r) = eik•rΣGUk(G)eiG•r and G is a reciprocal-lattice vector. The measurements covered a range of momentum parallel to the c axis equal to 0 ≤ |q| ≤ 1.84Å-1 and a …

Go to article

Photorefraction In Batio3, Stephen Ducharme Dec 1986

Photorefraction In Batio3, Stephen Ducharme

Stephen Ducharme Publications

This thesis summarizes the results of experimental investigations of the photorefractive properties of melt-grown BaTiO3 single crystals. Three basic photorefractive material properties are studied: (1) the effective density of photorefractive charges, (2) the photoconductivity of the photorefractive charges, and (3) the relative contributions of electron and hole photoconduction. Volume holographic measurement techniques are used: two-beam energy coupling, four-wave mixing, and erasure of volume holograms. The photorefractive properties were altered experimentally by chemically reducing or oxidizing a BaTiO3 crystal. I have extended the “hopping conduction” model of photorefractive transport to include simultaneous electron and hole photoconduction. The extension of …

Go to article

Thermal Propagation And Stability In Superconducting Films, Kenneth E. Gray, Robert T. Kampwirth, John F. Zasadzinski, Stephen P. Ducharme Jan 1983

Thermal Propagation And Stability In Superconducting Films, Kenneth E. Gray, Robert T. Kampwirth, John F. Zasadzinski, Stephen P. Ducharme

Stephen Ducharme Publications

Thermal propagation and stable hot spots (normal domains) are studied in various high Tc superconducting films (Nb3Sn, Nb, NbN and Nb3Ge). The prediction of the thermal propagation velocity of the long-standing model of Broom and Rhoderick (1960) is verified quantitatively in the regime of its validity. A new energy balance model is shown to give reasonable quantitative agreement of the dependence of the propagation velocity on the length of short normal domains. The steady state (zero velocity) measurements indicate the existence of two distinct situations for films on high thermal conductivity (sapphire) substrates. For low power per unit area the …

Go to article

First Prev