Open Access. Powered by Scholars. Published by Universities.®
- Institution
- Publication Year
Articles 1 - 13 of 13
Full-Text Articles in Physics
Fabrication Of Magnetocaloric La(Fe,Si)13 Thick Films, N H. Dung, N B. Doan, P De Rango, L Ranno, Karl G. Sandeman, N M. Dempsey
Fabrication Of Magnetocaloric La(Fe,Si)13 Thick Films, N H. Dung, N B. Doan, P De Rango, L Ranno, Karl G. Sandeman, N M. Dempsey
Publications and Research
La(Fe,Si)13–based compounds are considered to be very promising magnetocaloric materials for magnetic refrigeration applications. Many studies have focused on this material family but only in bulk form. In this paper we report on the fabrication of thick films of La(Fe,Si)13, both with and without post-hydriding. These films exhibit magnetic and structural properties comparable to bulk materials. We also observe that the ferromagnetic phase transition has a negative thermal hysteresis, a phenomenon not previously found in this material but which may have its origins in the availability of a strain energy reservoir, as in the cases of …
Voltage Controlled Magnetism In Cr2o3 Based All-Thin-Film Systems, Junlei Wang, Will Echtenkamp, Ather Mahmood, Christian Binek
Voltage Controlled Magnetism In Cr2o3 Based All-Thin-Film Systems, Junlei Wang, Will Echtenkamp, Ather Mahmood, Christian Binek
Christian Binek Publications
Voltage-control of exchange biases through active selection of distinct domain states of the magnetoelectric and antiferromagnetic pinning layer is demonstrated for Cr2O3/CoPd heterostructures. Progress and obstacles towards an isothermal switching of exchange bias are discussed. An alternative approach avoiding exchange bias for voltage-controlled memory exploits boundary magnetization at the surface of Cr2O3 as voltage-controlled state variable. We demonstrate readout and switching of boundary magnetization in ultra-thin Cr2O3/Pt Hall bar devices where reversal of boundary magnetization is achieved via magnetoelectric annealing with simultaneously applied ±0.5 V and 400 mT electric and magnetic fields.
Space-Charge Limited Conduction In Epitaxial Chromia Films Grown On Elemental And Oxide-Based Metallic Substrates, C.-P. Kwan, Mike Street, Ather Mahmood, Will Echtenkamp, M. Randle, K. He, J. Nathawat, N. Arabchigavkani, B. Barut, S. Yin, R. Dixit, Uttam Singisetti, Christian Binek, J. P. Bird
Space-Charge Limited Conduction In Epitaxial Chromia Films Grown On Elemental And Oxide-Based Metallic Substrates, C.-P. Kwan, Mike Street, Ather Mahmood, Will Echtenkamp, M. Randle, K. He, J. Nathawat, N. Arabchigavkani, B. Barut, S. Yin, R. Dixit, Uttam Singisetti, Christian Binek, J. P. Bird
Christian Binek Publications
We study temperature dependent (200 – 400 K) dielectric current leakage in high-quality, epitaxial chromia films, synthesized on various conductive substrates (Pd, Pt and V2O3). We find that trap-assisted space-charge limited conduction is the dominant source of electrical leakage in the films, and that the density and distribution of charge traps within them is strongly dependent upon the choice of the underlying substrate. Pd-based chromia is found to exhibit leakage consistent with the presence of deep, discrete traps, a characteristic that is related to the known properties of twinning defects in the material. The Pt- and V2O3-based films, in contrast, …
Dielectric Properties Of Thin Cr2o3 Films Grown On Elemental And Oxide Metallic Substrates, Ather Mahmood, Mike Street, Will Echtenkamp, Chun Pui Kwan, Jonathan P. Bird, Christian Binek
Dielectric Properties Of Thin Cr2o3 Films Grown On Elemental And Oxide Metallic Substrates, Ather Mahmood, Mike Street, Will Echtenkamp, Chun Pui Kwan, Jonathan P. Bird, Christian Binek
Christian Binek Publications
In an attempt to optimize leakage characteristics of α-Cr2O3 thin films, its dielectric properties were investigated at local and macroscopic scale. The films were grown on Pd(111), Pt(111), and V2O3 (0001), supported on Al2O3 substrate. The local conductivity was measured by conductive atomic force microscopy mapping of Cr2O3 surfaces, which revealed the nature of defects that formed conducting paths with the bottom Pd or Pt layer. A strong correlation was found between these electrical defects and the grain boundaries revealed in the corresponding topographic scans. In comparison, …
Electronic And Optical Properties Of La-Doped Sr3Ir2O7 Epitaxial Thin Films, Maryam Souri, Jsaminka Terzic, J. M. Johnson, John G. Connell, John H. Gruenewald, J. Thompson, Joseph W. Brill, J. Hwang, Gang Cao, Sung S. Ambrose Seo
Electronic And Optical Properties Of La-Doped Sr3Ir2O7 Epitaxial Thin Films, Maryam Souri, Jsaminka Terzic, J. M. Johnson, John G. Connell, John H. Gruenewald, J. Thompson, Joseph W. Brill, J. Hwang, Gang Cao, Sung S. Ambrose Seo
Physics and Astronomy Faculty Publications
We have investigated structural, transport, and optical properties of tensile strained (Sr1−xLax)3Ir2O7 (x = 0, 0.025, 0.05) epitaxial thin films. While high-Tc superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped Sr3Ir2O7 thin films is presumably due to disorder-induced …
Optical Signatures Of Spin-Orbit Exciton In Bandwidth-Controlled Sr2Iro4 Epitaxial Films Via High-Concentration Ca And Ba Doping, Maryam Souri, B. H. Kim, John H. Gruenewald, John G. Connell, J. Thompson, J. Nichols, Jsaminka Terzic, B. I. Min, Gang Cao, Joseph W. Brill, Sung S. Ambrose Seo
Optical Signatures Of Spin-Orbit Exciton In Bandwidth-Controlled Sr2Iro4 Epitaxial Films Via High-Concentration Ca And Ba Doping, Maryam Souri, B. H. Kim, John H. Gruenewald, John G. Connell, J. Thompson, J. Nichols, Jsaminka Terzic, B. I. Min, Gang Cao, Joseph W. Brill, Sung S. Ambrose Seo
Physics and Astronomy Faculty Publications
We have investigated the electronic and optical properties of (Sr1−xCax)2IrO4 (x = 0–0.375) and (Sr1−yBay)2IrO4 (y = 0–0.375) epitaxial thin films, in which the bandwidth is systematically tuned via chemical substitutions of Sr ions by Ca and Ba. Transport measurements indicate that the thin-film series exhibits insulating behavior, similar to the Jeff = 1/2 spin-orbit Mott insulator Sr2IrO4. As the average A-site ionic radius increases from (Sr1−xCax)2IrO4 to (Sr …
Direct Imaging Of Coexisting Ordered And Frustrated Sublattices In Artificial Ferromagnetic Quasicrystals, Barry Farmer, Vinayak Shantaram Bhat, Eric Teipel, J. Unguris, D. J. Keavney, Jeffrey Todd Hastings, Lance E. De Long
Direct Imaging Of Coexisting Ordered And Frustrated Sublattices In Artificial Ferromagnetic Quasicrystals, Barry Farmer, Vinayak Shantaram Bhat, Eric Teipel, J. Unguris, D. J. Keavney, Jeffrey Todd Hastings, Lance E. De Long
Physics and Astronomy Faculty Publications
We have used scanning electron microscopy with polarization analysis and photoemission electron microscopy to image the two-dimensional magnetization of permalloy films patterned into Penrose P2 tilings (P2T). The interplay of exchange interactions in asymmetrically coordinated vertices and short-range dipole interactions among connected film segments stabilize magnetically ordered, spatially distinct sublattices that coexist with frustrated sublattices at room temperature. Numerical simulations that include long-range dipole interactions between sublattices agree with images of as-grown P2T samples and predict a magnetically ordered ground state for a two-dimensional quasicrystal lattice of classical Ising spins.
Origin Of The Low Frequency Radiation Emitted By Radiative Polaritons Excited By Infrared Radiation In Planar La2o3 Films, Anita J. Vincent-Johnson, Yosep Schwab, Harkirat S. Mann, Mathieu Francoeur, James S. Hammonds Jr., Giovanna Scarel
Origin Of The Low Frequency Radiation Emitted By Radiative Polaritons Excited By Infrared Radiation In Planar La2o3 Films, Anita J. Vincent-Johnson, Yosep Schwab, Harkirat S. Mann, Mathieu Francoeur, James S. Hammonds Jr., Giovanna Scarel
Department of Physics and Astronomy - Faculty Scholarship
Upon excitation in thin oxide films by infrared radiation, radiative polaritons are formed with complex angular frequency ω, according to the theory of Kliewer and Fuchs (1966 Phys. Rev. 150 573). We show that radiative polaritons leak radiation with frequency ωi to the space surrounding the oxide film. The frequency ωi is the imaginary part of ω. The effects of the presence of the radiation leaked out at frequency ωi are observed experimentally and numerically in the infrared spectra of La2O3 films on silicon upon excitation by infrared radiation of the 0TH type radiative polariton. The frequency ωi is found …
Femtosecond Spectrotemporal Magneto-Optics, J.-Y. Bigot, L. Guidoni, E. Beaurepaire, Peter N. Saeta
Femtosecond Spectrotemporal Magneto-Optics, J.-Y. Bigot, L. Guidoni, E. Beaurepaire, Peter N. Saeta
All HMC Faculty Publications and Research
A new method to measure and analyze the time and spectrally resolved polarimetric response of magnetic materials is presented. It allows us to study the ultrafast magnetization dynamics of a CoPt3 ferromagnetic film. The analysis of the pump-induced rotation and ellipticity detected by a broad spectrum probe beam shows that magneto-optical signals predominantly reflect the spin dynamics in ferromagnets.
Photoluminescence Properties Of Silicon Quantum-Well Layers, Peter N. Saeta, A. C. Gallagher
Photoluminescence Properties Of Silicon Quantum-Well Layers, Peter N. Saeta, A. C. Gallagher
All HMC Faculty Publications and Research
Nanometer-scale crystal silicon films surrounded by SiO2 were prepared by oxidizing silicon-on-insulator substrates prepared from SIMOX (separation by implantation of oxygen) and crystallized hydrogenated amorphous silicon films. Average silicon layer thickness was determined from reflection spectra. When sufficiently thin (<2 >nm), all layers emitted red photoluminescence under blue and UV cw excitation, with a spectrum that did not depend on the mean layer thickness. The spectrum was roughly Gaussian with a peak energy of 1.65 eV, which is lower than for most porous silicon spectra. The time scale for the luminescence decay was ~35 μs at room temperature and …
Reflection High-Energy Electron-Diffraction Study Of Melting And Solidification Of Pb On Graphite, Z. H. Zhang, P. Kulatunga, H. E. Elsayed-Ali
Reflection High-Energy Electron-Diffraction Study Of Melting And Solidification Of Pb On Graphite, Z. H. Zhang, P. Kulatunga, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The melting and solidification of Pb thin films on pyrolytic graphite are investigated in situ by reflection high-energy electron diffraction. Thin films with thicknesses of 4-150 monolayers are investigated. The surface morphology of the thin films were studied by scanning electron microscopy. Superheating of the Pb thin films by 4±2 to 12±2 K is observed from diffraction intensity measurements. Upon cooling the substrate, the Pb on graphite is seen to supercool by ∼69±4 K.
Optical Rectification At Semiconductor Surfaces, Shun Lien Chuang, Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, Anthony F. J. Levi
Optical Rectification At Semiconductor Surfaces, Shun Lien Chuang, Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, Anthony F. J. Levi
All HMC Faculty Publications and Research
We show that far-infrared radiation can be generated in the depletion field near semiconductor surfaces via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This mechanism is conceptually different from those previously proposed and accounts for many recent experimental observations.
Ultrafast Electronic Disordering During Femtosecond Laser Melting Of Gaas, Peter N. Saeta, J.-K. Wang, Y. Siegal, N. Bloembergen, E. Mazur
Ultrafast Electronic Disordering During Femtosecond Laser Melting Of Gaas, Peter N. Saeta, J.-K. Wang, Y. Siegal, N. Bloembergen, E. Mazur
All HMC Faculty Publications and Research
We have observed an ultrarapid electronic phase transformation to a centrosymmetric electronic state during laser excitation of GaAs with intense femtosecond pulses. Reflection second-harmonic intensity from the upper 90 atomic layers vanishes within 100 fs; reflectivity rises within 0.5 ps to a steady value characteristic of a metallic molten phase, long before phonon emission can heat the lattice to the melting temperature.