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Air Force Institute of Technology

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Articles 91 - 120 of 126

Full-Text Articles in Semiconductor and Optical Materials

Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard Mar 2001

Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard

Theses and Dissertations

Optical communication and computing systems are required to meet future information transfer and processing needs. Microcavity devices serve as an enabling technology to implement and integrate optoelectronic systems. It is important to understand the optical and mechanical properties of materials utilize within microcavity devices. Only then is it possible to accurately model and analyze structures. Microcavity structures incorporating a high aluminum content AlGaAs layers are designed, grown, processed, and measured. The processing of these devices includes the conversion of high aluminum-content AlGaAs layers to native aluminum oxide (AlO) layers through the process of thermal oxidation. This selective conversion of microcavity …

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Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan Mar 2001

Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan

Theses and Dissertations

The Air Force has a growing need for the greater bandwidth, speed, and flexibility offered by optical communication links. Future space systems and airborne platforms will most likely use optical signals for efficient power transmission and to minimize the possibility of spoofing and eavesdropping. Tunable optical delays play an important role in the implementation of free space optical communication links. The primary challenge in implementing these systems is the active maintenance of coherent wave fronts across the system's optical aperture. For space applications, this aperture may he hundreds of meters in diameter. Spatial segmentation of a large aperture into smaller …

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Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott Dec 1999

Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott

Theses and Dissertations

Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 °C) ion-implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H-SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 °C. Trap parameters of both damage-related and species-related defects …

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Output Control Of Vertical Microcavity Light Emitting Device, James A. Lott Apr 1999

Output Control Of Vertical Microcavity Light Emitting Device, James A. Lott

AFIT Patents

An improved intracavity sensor based output power control for microcavity light emitting devices. An improved phototransistor transducer is both configured and physically disposed so that it passively transmits the spurious optical energy output of the microcavity light emitting device while simultaneously generating a light determined electrical signal of easily used large magnitude that is nearly free of error. The base-collector region of the transistor is disposed with a quantum well absorbing layer and produces a signal responsive to a selected emission wavelength. The configuration of the optical energy communicating transducer is arranged so that it is improved in sensitivity and …

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Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath Mar 1999

Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath

Theses and Dissertations

Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B …

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Measurement Of Ultrafast Carrier Recombination Dynamics In Mid-Infrared Semiconductor Laser Material, William T. Cooley Dec 1997

Measurement Of Ultrafast Carrier Recombination Dynamics In Mid-Infrared Semiconductor Laser Material, William T. Cooley

Theses and Dissertations

Shockley-Read-Hall, radiative, and Auger recombination rates in mid-infrared laser structures are measured and reported using time resolved photoluminescence (TRPL) frequency upconversion. The mid-IR lasers studied were actual InAsSb/InAlAsSb multiple-quantum-well (MQW) diode lasers emitting near 3.3 micrometers which were previously characterized for laser performance. This effort extends the initial studies and reports on the carrier recombination dynamics. Shockley-Read-Hall, radiative and Auger recombination rates at low temperature (77 K) were measured and found to be ASRH ≈ 10 x 107sec-1, Brad ≈ 2 x 10-10 cm3sec-1 and CAuger < 10-29 cm6 …

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Experimental Investigation Of Nonlinear Dynamics In Single Mode Semiconductor Laser Diodes With Phase Conjugate Feedback, Gordon T. Hengst Aug 1997

Experimental Investigation Of Nonlinear Dynamics In Single Mode Semiconductor Laser Diodes With Phase Conjugate Feedback, Gordon T. Hengst

Theses and Dissertations

The semiconductor laser diode offers a unique system to investigate nonlinear dynamics when optical feedback is applied. Although there is extensive research of laser diodes with optical feedback from normal dielectric mirrors, very little has been done experimentally to analyze the effects of degenerate phase conjugate feedback from a BaTiO3 crystal. This research experimentally investigated the dynamics of a single-mode laser diode with weak phase conjugate feedback using both the self-pumped and double phase conjugate geometries. The experimental results validated a mathematical model which numerically evaluates the Lang-Kobayahsi coupled differential equations. The model simulated the nonlinear behavior of a …

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Investigation Of The Optical Properties Of Ordered Semiconductor Materials, Jack E. Mccrae Jr. Jan 1997

Investigation Of The Optical Properties Of Ordered Semiconductor Materials, Jack E. Mccrae Jr.

Theses and Dissertations

Optical studies have been conducted upon CdGeAs2 and ZnGeP2, two of the most promising semiconductors being developed for mid-infrared non-linear optics applications. These experiments included photoluminescence (PL) studies of both compounds as well as photoreflectance (PR) measurements upon CdGeAs2. In addition, Hall effect measurements were carried out upon CdGeAs2, to aid in interpretation of the optical data. PL was measured as a function of laser power, sample temperature, and crystal orientation for CdGeAs2. One broad weak peak near 0.38 eV, and another somewhat narrower and often far brighter peak near 0.57 …

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Optical Detection Properties Of Silicon-Germanium Quantum Well Structures, Michael R. Gregg Oct 1996

Optical Detection Properties Of Silicon-Germanium Quantum Well Structures, Michael R. Gregg

Theses and Dissertations

A study has been carried out on Si/SiGe multi quantum well structures to determine their applicability as normal incidence infrared detectors in the spectral range of 2-12 micrometers. The research effort was primarily experimental; however, extensive calculations were performed to initially explain the experimental data and then used to design subsequent structures. Multiple quantum well structures grown on both Si[001] and Si[110] substrates via molecular beam epitaxy were studied by photoluminescence, absorption, and photoresponse measurements over a wide parameter space. Variables included quantum well depth and width, well doping, number of wells and growth temperature. Well widths were varied from …

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Design Of Gradient Index Optical Thin Films, Jeffrey J. Druessel Jun 1996

Design Of Gradient Index Optical Thin Films, Jeffrey J. Druessel

Theses and Dissertations

Gradient index thin films provide greater flexibility for the design of optical coatings than the more conventional 'layer' films. In addition, gradient index films have higher damage thresholds and better adhesion properties. This dissertation presents an enhancement to the existing inverse Fourier transform gradient index design method, and develops a new optimal design method for gradient index films using a generalized Fourier series approach. The inverse Fourier transform method is modified to include use of the phase of the index profile as a variable in rugate filter design. Use of an optimal phase function in Fourier-based filter designs reduces the …

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Electrical Characterization Of 4h-Silicon Carbide P-N Junction Diodes, Michael E. Dunn Dec 1995

Electrical Characterization Of 4h-Silicon Carbide P-N Junction Diodes, Michael E. Dunn

Theses and Dissertations

The current conduction mechanisms of 4H-SiC p+n mesa diodes were studied using current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T), deep level transient spectroscopy (DLTS), optical observations, and reverse breakdown measurements. Temperature and voltage dependencies of diffusion, recombination, and tunneling current processes are shown to be consistent with Sah-Noyce-Shockley theory. Recombination currents having an ideality factor of A=1.85-2.1 yielded an activation energy of EA=1.56 eV, whereas for ideal recombination, A=2 and EA=1.6 eV. Forward I-V curves of poor diodes dominated by tunneling and recombination processes, showing low reverse breakdown voltages of approx. 100 V, can be correlated to DLTS results …

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Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter Dec 1995

Photoluminescence And Electroluminescence Of Erbium And Neodymium Implanted Semiconductors, James R. Hunter

Theses and Dissertations

Low temperature photoluminescence (PL) and electroluminescence (EL) measurements were used to study the excitation of erbium- and neodymium-implanted GaAs and AlxGa1-xAs (x=0. 1, 0.3) pn-junctions. The rare-earth (RE) emissions were investigated as a function of ion dose, aluminum mole fraction, laser excitation power, and applied forward bias voltage for the implanted samples. Low temperature PL was also measured from Er doped silicon grown by the metalorganic chemical vapor-phase deposition (MOCVD) method using various growth parameters.. The MOCVD-grown Si samples were studied as a function of metalorganic source temperature, silane (SiH4) flow, growth time, and …

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Electrical Characterization Of 4h-And 6h-Silicon Carbide Schottky Diodes, Jeffrey C. Wiemeri Dec 1995

Electrical Characterization Of 4h-And 6h-Silicon Carbide Schottky Diodes, Jeffrey C. Wiemeri

Theses and Dissertations

The electrical properties of silicon carbide (SiC) make it an excellent candidate for use in high temperature/high power devices due to its wide bandgap, high breakdown field, high electron mobility, etc. In this work two Schottky diodes of platinum (Pt) on n-type carbon faced 4H-SiC and three Schottky diodes of nickel (Ni) on n-type silicon faced 6H-SiC were electrically characterized. The diodes exhibited good performance up to 698 K for both the forward and reverse (up to -100v) bias voltages. The barrier heights measured by I-V-T tests were found to be 0.32 and 0.61 eV for the Pt/4H-SiC samples, but …

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Optical Characterization Of Indium Arsenide Antimonide Semiconductors Grown By Molecular Beam Epitaxy, Michael A. Marciniak Sep 1995

Optical Characterization Of Indium Arsenide Antimonide Semiconductors Grown By Molecular Beam Epitaxy, Michael A. Marciniak

Theses and Dissertations

The material parameters and crystalline quality of undoped, MBE-grown InAs1-xSbx nearly lattice-matched to (100) GaSb (-0.617% ≤ Δ a-a ≤ +0.708%) similar to material used for mid-infrared semiconductor lasers were determined by optical characterization. Absorption measurements at temperatures between 6-295 K determined the energy gap and wavelength-dependent absorption coefficient for each sample. The compositional dependence of the energy gap was anomalous when compared to previously reported data, suggesting phase separation existed in the material. The samples were also studied by temperature- and excitation-dependent photoluminescence (PL), which, for the majority of cases, showed only a single band-edge peak, …

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Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul Dec 1994

Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul

Theses and Dissertations

Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a 60Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of …

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Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills Dec 1994

Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills

Theses and Dissertations

A mathematical model of the influence on electric field screening arising from a single impurity in a wide bandgap semiconductor has been numerically investigated and compared with analytically derived solutions. The parameter set chosen to perform the comparison of analytical solution and numerical solution is based upon a bismuth silicate crystal. Both the analytical calculations and the numerical calculations are an attempt to mathematically model the internal electric field within a semiconductor. Two types of impurities were looked at: a single donor level and a single trap impurity level. In general, after an abrupt application of a voltage across the …

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Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis Dec 1994

Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis

Theses and Dissertations

Typical undoped bulk grown SiC shows n- or p-type conductivity due to residual impurities such as nitrogen, boron, or aluminum. In order to produce high resistivity material, vanadium can be used as a compensating dopant. Since vanadium is an amphoteric dopant in SiC, it produces either a donor state, VSi4+(3d1) → VSi5+(3d0), or an acceptor state, VSi4+(3d1) → VSi3+(3d2). Thus, vanadium doping can compensate both n- and p-type conductivity. In this work, vanadium doped and undoped 4H- and 6H-SiC grown …

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Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry Dec 1994

Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry

Theses and Dissertations

This research was an investigation into the suitability of a recently developed polymer, polyphenylene, as a material for integrated optical circuits (IOCs). Polymers show great promise in the area of IOCs because of material processing advantages, compatibility with most existing integrated circuit technology, and relatively strong nonlinear optical characteristics. This thesis contains an overview of: dielectric waveguides, linear and nonlinear directional coupler theory; various models useful in the design and analysis of optical waveguides; the fabrication of three different waveguide designs; the experimental apparatus and procedure used to optically characterize the waveguides; and the experimental results of the characterization. Waveguiding …

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The Junction Characteristics And Current Conduction Mechanisms Of Gainp2 N+P Diodes And Solar Cells, Kitt C. Reinhardt Dec 1994

The Junction Characteristics And Current Conduction Mechanisms Of Gainp2 N+P Diodes And Solar Cells, Kitt C. Reinhardt

Theses and Dissertations

This work involves an investigation of GaInP2 n+p diode and solar cell dark current mechanisms, the defect centers that affect these mechanisms, and the response of dark current and solar cell photovoltaic parameters to I MeV electron irradiation and thermal annealing. Dark current due to carrier diffusion, recombination, and tunneling were identified, and recombination current was found to dominate at the maximum power-point voltage of the GaInP2 solar cells. Carrier recombination was found to occur via defect centers at the perimeter and within the bulk of the junction. Two deep majority-hole trap centers were found at E …

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The Excitation Mechanism Of Praseodymium-Doped Semiconductors, Paul L. Thee Jun 1994

The Excitation Mechanism Of Praseodymium-Doped Semiconductors, Paul L. Thee

Theses and Dissertations

This study on praseodymium Pr luminescence in AlxGa1-xAs was conducted to enhance the understanding of the excitation mechanism. Pr was implanted at 390 keV with doses from 5 x 1012 to 5 x 1013 sq cm into AlxGa1-xAs x0.0 to 0.50 wafers which were annealed using the rapid thermal annealing RTA method. Low temperature photoluminescence PL was conducted using an Ar-ion laser and Ge detector. PL emissions of Pr from all hosts include peaks near 1.3 and 1.6 µm which are assigned to the intra-4f transitions of 1G4 yielding 3H5 …

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Rapid And Accurate Timing Simulation Of Radiation-Hardened Digital Microelectronics Using Vhdl, Charles P. Brothers Jr. Mar 1994

Rapid And Accurate Timing Simulation Of Radiation-Hardened Digital Microelectronics Using Vhdl, Charles P. Brothers Jr.

Theses and Dissertations

This dissertation presents the development of a fast, accurate, timing simulation capability based on VHSIC Hardware Description Language VHDL without the use of back annotation of timing delay information. This VHDL-based timing simulator is intended for use with radiation-hardened microelectronics in simulating timing of circuit operation in pre-radiation, post-radiation 1 MradSi total dose, and ionizing dose radiation environments. Development of the timing models are presented. The implementation of the timing models are incorporated into a VHDL library composed of basic logic gates and flip-flops. Simulations of complex circuits were run in SPICE and VHDL to assess the timing accuracy and …

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Influence Of Embedded Optical Fibers On Compressive Strength Of Advanced Composites, Stefan B. Dosedel Dec 1993

Influence Of Embedded Optical Fibers On Compressive Strength Of Advanced Composites, Stefan B. Dosedel

Theses and Dissertations

This study investigated the effects of embedding optical fibers into advanced composite materials. This combination was meant to simulate 'smart structures' that have been shown to sense several different variables in the composite including strain, temperature, and damage. A laminate orientation taken from an existing aircraft structure was used to fabricate sixteen groups of specimens which were subjected to compression testing in an IITRI fixture to determine the ultimate compressive strength and modulus of elasticity. Ten of these groups were fabricated with optical fibers while the other six were control groups and contained no optical fibers. This study showed that …

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The Effects Of Optical Feedback On Polarization Of Vertical Cavity Surface Emitting Lasers, Gregory J. Vansuch Dec 1993

The Effects Of Optical Feedback On Polarization Of Vertical Cavity Surface Emitting Lasers, Gregory J. Vansuch

Theses and Dissertations

Vertical Cavity Surface Emitting Lasers VCSELs are a type of semiconductor laser with a cavity oriented orthogonally to the planes of material growth. These lasers differ from conventional edge emitting lasers in several important ways. They have symmetric output beams and they are easily built into two dimensional arrays, making them very attractive as photonic components. The characteristic of interest in this thesis is polarization. While the asymmetric cavities of edge emitters exhibit a clear preference for light polarized in a particular direction, the cylindrically symmetric cavity of a VCSEL has no clear preference. Therefore, it should be relatively easy …

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Design And Performance Evaluation Of A Gas Chromatograph Micromachined In A Single Crystal Silicon Substrate, Rocky R. Reston Mar 1993

Design And Performance Evaluation Of A Gas Chromatograph Micromachined In A Single Crystal Silicon Substrate, Rocky R. Reston

Theses and Dissertations

This investigation designed and developed a miniature gas chromatograph (GC) using silicon micromachining techniques. The GC is composed of a miniature sample injector (10 µl sample loop); a 0.9 m long, rectangular-shaped (300 µm width and 10 micrometers height) capillary column coated with a 0.2 µm thick copper phthalocyanine (CuPc) stationary phase; and a dual-detector scheme incorporating a CuPc-coated chemiresistor and a 125 µm diameter thermal conductivity detector bead. Micromachining was employed to fabricate the sample injector interface, the GC column, and the dual-detector cavity. A novel processing technique was developed to sublime the CuPc stationary phase coating on the …

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Luminescence Study Of Ion-Implanted And Mbe-Grown Er-Doped Gaas And AlXGa1-XAs, Jose E. Colon Mar 1993

Luminescence Study Of Ion-Implanted And Mbe-Grown Er-Doped Gaas And AlXGa1-XAs, Jose E. Colon

Theses and Dissertations

The excitation and de-excitation mechanisms of the 1.54 microns emissions, from ion implanted and MBE grown GaAs:Er and AlxGa1-xAs:Er, were studied through luminescence experiments. Experimental techniques included photoluminescence, time resolved photoluminescence, and selective excitation photoluminescence. The Er3+ emissions were studied as a function of Er concentration, aluminum mole friction, n- and p-type doping level, and annealing temperature. In addition oxygen co-doping studies were done in order to determine the role played by oxygen in the Er3+ luminescence.

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Phase Conjugation In Optical Fiber Via Stimulated Brillouin Scattering With Feedback From A Barium Titanate Crystal, Patrick R. Emmert Dec 1992

Phase Conjugation In Optical Fiber Via Stimulated Brillouin Scattering With Feedback From A Barium Titanate Crystal, Patrick R. Emmert

Theses and Dissertations

The goal of this thesis was to obtain phase conjugation in multi-mode optical fiber via stimulated Brillouin scattering (SBS) with the aid of a barium titanate crystal which formed a phase conjugate cavity for the Stokes beam. SBS was demonstrated but the SBS threshold was unaffected by the presence of the barium titanate crystal and no evidence for the presence of phase conjugation in the optical fiber was obtained.

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Cathodoluminescence Spectroscopy Of Zinc Germanium Phosphide Zngep2, Michael R. Gregg Dec 1992

Cathodoluminescence Spectroscopy Of Zinc Germanium Phosphide Zngep2, Michael R. Gregg

Theses and Dissertations

Zinc Germanium Phosphide (ZnGeP2) is a nonlinear semiconductor suitable for use as a laser tuning element over the two to six micron wavelength range. Although this crystal has been studied in the past, its luminescent properties are not yet well understood. In this present study, ZnGeP2 has been examined using cathodoluminescence spectroscopy (CL). Specifically, the spectral dependence of the CL was obtained as a function of electron beam energy, beam current and temperature. The resulting CL was found to be polarized with a peak structure that was dependent on the polarization. This peak structure observed by CL …

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The Effect Of Oxide Layers And Boron Doping On The Breakdown Of High Purity Silicon, Brian A. Hibbeln Dec 1992

The Effect Of Oxide Layers And Boron Doping On The Breakdown Of High Purity Silicon, Brian A. Hibbeln

Theses and Dissertations

For many applications such as lasers and radar drive circuits, there exists a need for solid state high voltage, high current switches. Current gaseous discharge switches fail to satisfy the ruggedness, reliability, and lifetime requirements of today's systems. A promising alternative is the Photoconductive Semiconductor Switch (PCSS). The limiting factor in the operation of these switches is the occurrence of breakdown through channels formed slightly below the surface. A theory on the formation of these channels is presented based upon band bending at the metal-semiconductor interface, a nonhomogeneous space charge due to irregular trap distributions, and thermal runaway in localized …

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Processability Of Polythiophene Thin Films By Ultraviolet Photo Bleaching, Derek D. Fletcher Dec 1992

Processability Of Polythiophene Thin Films By Ultraviolet Photo Bleaching, Derek D. Fletcher

Theses and Dissertations

Materials possessing strong ��(3) optical properties such as Polythiophene are sought for the production of optical switches. Polythiophene thin films produced by plasma enhanced CVD show a surface rms roughness of 10-15 angstroms over single square micron areas which is acceptable for wave guiding in the near IR. This research investigates permanently changing the optical properties of such a thin film by exposure to UV radiation (254 nm, 35 mW/cm2), known as photo bleaching, in hope of creating a refractive index boundary for use in total internal reflection. After 60 minutes exposure the refractive index shows …

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Excitation And De-Excitation Mechanisms Of Er-Doped Gaas And Algaas, David W. Elsaesser Dec 1992

Excitation And De-Excitation Mechanisms Of Er-Doped Gaas And Algaas, David W. Elsaesser

Theses and Dissertations

Electrical and optical characterization have been performed on GaAs and AlxGa1-xAs samples doped with Er either by ion implantation or during Molecular Beam Epitaxial (MBE) growth. Deep Level Transient Spectroscopy (DLTS) and Temperature-Dependent Hall Effect (TDH) measurements indicated the presence of two hole traps in Er-doped GaAs, at 35 and 360 meV above the valence band maximum. The former (shallower) center was thought to be due to Er substituting for a Ga atom (ErGa) and giving rise to an isoelectronic impurity potential. The second center was attributed to an Er atom occupying an interstitial …

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