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Air Force Institute of Technology

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Articles 61 - 90 of 126

Full-Text Articles in Semiconductor and Optical Materials

A Systematic Study Of The Optical And Electrical Properties Of Ge1-YSnY And Ge1-X-YSiXSnY Semiconductor Alloys, Thomas R. Harris Feb 2014

A Systematic Study Of The Optical And Electrical Properties Of Ge1-YSnY And Ge1-X-YSiXSnY Semiconductor Alloys, Thomas R. Harris

Theses and Dissertations

In order to fully utilize newly developed Ge1-ySny and Ge1-x-ySixSny materials for new novel optoelectronic devices, the optical and electrical properties of these alloys were investigated using photoluminescence (PL) and Hall-effect measurements. Direct bandgap PL emission was observed from almost all the samples, making them very promising candidates for Si-based light emitting devices. T-dependent PL studies also indicate that the indirect-to-direct bandgap transition of Ge1-ySny alloys might take place at a much lower Sn content than the theory predicts. T-dependent Hall-effect measurements showed both degenerate parallel conducting layers as …

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Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben Apr 2013

Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben

Faculty Publications

We find Mn surface segregation for single crystals of Mn doped Li2B4O7, nominally Li1.95Mn0.05B4O7(001), but as the temperature increases, evidence of this Mn surface segregation diminishes significantly. At room temperature, the surface photovoltaic charging is significant for this pyroelectric material but is quenched at a temperature well below that seen for the undoped Li2B4O7 samples. The suppression of surface charging in the region of 120 °C that accompanies the temperature of Mn dissolution in the bulk of Li2B4 …

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Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis May 2011

Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis

Faculty Publications

Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same …

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Electromagnetic Modeling And Measurement Of Adaptive Metamaterial Structural Elements, Matthew E. Jussaume Mar 2011

Electromagnetic Modeling And Measurement Of Adaptive Metamaterial Structural Elements, Matthew E. Jussaume

Theses and Dissertations

This document addresses two major obstacles facing metamaterial development: uncertainty in the characterization of electromagnetic field behavior in metamaterial structures and the relatively small operational bandwidth of metamaterial structures. To address the first obstacle, a method of prediction aided measurement is developed and exploited to examine the field interactions within metamaterial devices. The fusion of simulation and measurement techniques enhances the understanding of the physical interactions of fields in the presence of metamaterials. To address the second obstacle, this document characterizes the effectiveness of an adaptive metamaterial design that incorporates a microelectromechanical systems (MEMS) variable capacitor. Applying voltages to the …

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Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha Oct 2010

Measurement And Modeling Of Infrared Nonlinear Absorption Coefficients And Laser-Induced Damage Thresholds In Ge And Gasb, Torrey J. Wagner, Matthew J. Bohn, Ronald A. Coutu Jr., L. P. Gonzales, J. M. Murray, K. L. Schepler, S. Guha

Faculty Publications

Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 µm for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 µm and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al2O3 anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond …

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Wave Optics Simulation Of Optically Augmented Retroreflections For Monostatic/Bistatic Detection, John J. Tatar Iii Mar 2009

Wave Optics Simulation Of Optically Augmented Retroreflections For Monostatic/Bistatic Detection, John J. Tatar Iii

Theses and Dissertations

Optical devices interrogated with a laser in the appropriate band can exhibit strong, deterministic reflections of the incident beam. This characteristic could be exploited for optical target detection and identification. The distribution of reflected power is strongly dependent on the geometry of the interrogation scenario, atmospheric conditions, and the cross section of the target optical device. Previous work on laser interrogation systems in this area has focused on analytic models or testing. To the best of my knowledge, I am presenting for the first time an approach to predict reflected power for a variety of interrogation configurations, targets, and propagation …

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A Comparative Study Of The Bidirectional Reflectance Distribution Function Of Several Surfaces As A Mid-Wave Infrared Diffuse Reflectance Standard, Bradley Balling Mar 2009

A Comparative Study Of The Bidirectional Reflectance Distribution Function Of Several Surfaces As A Mid-Wave Infrared Diffuse Reflectance Standard, Bradley Balling

Theses and Dissertations

The Bi-Directional Reflectance Distribution Function (BRDF) has a well defined diffuse measurement standard in the ultraviolet, visible, and near infrared (NIR), Spectralon(trade name). It is predictable, stable, repeatable, and has low surface variation because it is a bulk scatterer. In the mid-wave IR (MWIR) and long-wave IR (LWIR), there is not such a well-defined standard. There are well-defined directional hemispherical reflectance (DHR) standards, but the process of integrating BRDF measurements into DHR for the purpose of calibration is problematic, at best. Direct BRDF measurement standards are needed. This study use current calibration techniques to ensure valid measurements and then systematically …

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The Effect Of Radiation On The Electrical Properties Of Aluminum Gallium Nitride/Gallium Nitride Heterostructures, John W. Mcclory Jun 2008

The Effect Of Radiation On The Electrical Properties Of Aluminum Gallium Nitride/Gallium Nitride Heterostructures, John W. Mcclory

Theses and Dissertations

AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes. AlGaN/GaN HFETs demonstrated threshold voltage shifts and drain current changes after irradiation. After electron and neutron irradiation applied at ~80 K, measurement of the drain current at this temperature showed an increase that saturated after 1013 electrons/cm2 or 1010 neutrons/cm2 due …

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Electrical Activation Studies Of Silicon Implanted Aluminum Gallium Nitride With High Aluminum Mole Fraction, Elizabeth A. Moore Dec 2007

Electrical Activation Studies Of Silicon Implanted Aluminum Gallium Nitride With High Aluminum Mole Fraction, Elizabeth A. Moore

Theses and Dissertations

This research demonstrates a method for producing highly conductive Si-implanted n-type aluminum gallium nitride (AlxGa1-xN) alloys, and represents a comprehensive analysis of the resulting material's electrical and optical properties as a function of Al mole fraction, anneal temperature, anneal time, and implantation dose. Highly conductive alloys are critical to the fabrication of devices operating in deep UV, high-temperature, high-power, and high-frequency environments, and thus this research is significant in regard to the application of such devices. The AlxGa1-xN wafers of this study, with Al concentrations of 10 to 50%, were implanted at …

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Optical Parametric Oscillation In Orientation-Patterned Gallium Arsenide, Scott A. Shell Mar 2007

Optical Parametric Oscillation In Orientation-Patterned Gallium Arsenide, Scott A. Shell

Theses and Dissertations

Tunable laser sources in the mid-infrared (MIR) spectral range are required for several Air Force applications. Existing lasers with output in the near-infrared can be converted to more desirable MIR by using nonlinear effects. Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques. This research examines optical parametric oscillation (OPO) of several OPGaAs samples using a 2.052 micrometers wavelength Tm, Ho:YLF pump laser. Of the seven samples available the five that were capable of getting OPO output with …

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Cobalt Doping Of Semiconducting Boron Carbide Using Cobaltocene, Lonnie Carlson Mar 2007

Cobalt Doping Of Semiconducting Boron Carbide Using Cobaltocene, Lonnie Carlson

Theses and Dissertations

The decomposition of cobaltocene and metacarborane (closo-1,7-dicarba-decaborane) under low energy electron irradiation at about 200 K results in a material with the Fermi level closer to the valence band than the material resulting from the decomposition of metacarborane alone. This indicates that cobaltocene provides a relatively p-type dopant as seen in ultraviolet photoemission spectroscopy/inverse photoemission spectroscopy. Upon warming to room temperature, however, the Fermi level shifts towards the conduction band, suggesting an n-type dopant. This temperature dependent surface photovoltage effect is not compelling evidence for the majority carrier type but does suggest an increase in the carrier concentration …

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Characterization Of Passivated Indium Antimonide, Catherine Ann Taylor Jun 2006

Characterization Of Passivated Indium Antimonide, Catherine Ann Taylor

Theses and Dissertations

Infrared absorption and photoluminescence measurements have been used to optically characterize bulk-grown, 680-μm thick, indium antimonide (InSb), both as-grown and after passivation by either anodization or a 700-Å layer of silicon oxide (SiOx). Spectra were obtained using Fourier transform infrared (FT-IR) spectroscopy. Results include the effects of sample temperature in the range of 10 to 300 K and 4.636 μm laser pump power in the range of 28 mW to 1.43 W for the photoluminescence spectrum.

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Optical Characterization Of Thick Growth Orientation-Patterned Gallium Arsenide, Joshua W. Meyer Mar 2006

Optical Characterization Of Thick Growth Orientation-Patterned Gallium Arsenide, Joshua W. Meyer

Theses and Dissertations

Tunable laser sources in the mid-infrared (MIR) spectral range are required for several Air Force applications. Existing lasers with output in the near-infrared can be converted to more desirable MIR by using nonlinear effects. Orientation patterned gallium arsenide (OPGaAs) is a promising nonlinear conversion material because it has broad transparency and can be engineered for specific pump laser and output wavelengths using quasi-phase matching techniques. This research examines the optical quality of seven OPGaAs crystal samples and explores the design of an optical parametric oscillator (OPO) device. The Air Force Research Laboratory Electro-Optical Countermeasures Technology Branch obtained the samples from …

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Characterization Of Stress In Gan-On-Sapphire Microelectromechanical Systems (Mems) Structures Using Micro-Raman Spectroscopy, Francisco E. Parada Mar 2006

Characterization Of Stress In Gan-On-Sapphire Microelectromechanical Systems (Mems) Structures Using Micro-Raman Spectroscopy, Francisco E. Parada

Theses and Dissertations

Micro-Raman (µRaman) spectroscopy is an efficient, non-destructive technique widely used to determine the quality of semiconductor materials and microelectromechanical systems. This work characterizes the stress distribution in wurtzite gallium nitride grown on c-plane sapphire substrates by molecular beam epitaxy. This wide bandgap semiconductor material is being considered by the Air Force Research Laboratory for the fabrication of shock-hardened MEMS accelerometers. µRaman spectroscopy is particularly useful for stress characterization because of its ability to measure the spectral shifts in Raman peaks in a material, and correlate those shifts to stress and strain. The spectral peak shift as a function of stress, …

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Passive Multiple Beam Combination In Optical Fibers Via Stimulated Brillouin Scattering, Kirk C. Brown Mar 2006

Passive Multiple Beam Combination In Optical Fibers Via Stimulated Brillouin Scattering, Kirk C. Brown

Theses and Dissertations

Many active methods of scaling laser brightness have been demonstrated in recent years. The goal of this research was to demonstrate the feasibility of passively combining multiple laser beams using Stimulated Brillouin Scattering (SBS) in a long multimode optical fiber. This method of combination employed a “Gatling gun” fiber array that allowed several collimated beams to be focused by a lens into an optical fiber. The retroreflected Stokes beam is passed through the center of the beam combiner for analysis. In addition to experimental methodology and equipment used, the theoretical and historical background of SBS in optical fibers is provided. …

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Analysis Of Photoconductive Properties In Ge2Sb2Te5 (Gst) Chalcogenide Films For Applications In Novel Electronics, John R. V. Chezem Mar 2006

Analysis Of Photoconductive Properties In Ge2Sb2Te5 (Gst) Chalcogenide Films For Applications In Novel Electronics, John R. V. Chezem

Theses and Dissertations

This thesis investigated the thermal phase-change properties in Ge2Sb2Te5 (GST) chalcogenide-based films and determined the feasibility of coupling the GST with photosensitive DNA material for novel optical device applications. Modeling and testing of GST were researched with the approach that GST would react as a resistive mechanism through thermal manipulation. A test structure was fabricated with a 2-micronmeter MEMS fabrication process. GST material was deposited (by RF sputtering) on the surface of the test structures. The GST was analyzed primarily in the amorphous to crystalline transition states due to more distinct changes in the resistance …

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Carrier Lifetime Dynamics Of Epitaxial Layer Hvpe Gallium Arsenide Using Time-Resolved Experiments, Wayne E. Eikenberry Mar 2006

Carrier Lifetime Dynamics Of Epitaxial Layer Hvpe Gallium Arsenide Using Time-Resolved Experiments, Wayne E. Eikenberry

Theses and Dissertations

GaAs is a potential semiconductor material for producing both mid-infrared and terahertz radiation using the new technique of quasi-phase matching in an orientationally patterned GaAs (OP-GaAs) crystal. OP-GaAs is grown using a fast growth process called hydride vapor phase epitaxy (HVPE). Unfortunately, HVPE produces a high number of defects. These defects cause Shockley-Read-Hall recombination rates to dominate over Auger and radiative recombination rates. The carrier lifetime from four OP-GaAs samples are reported here using two different experimental techniques. The first experiment used a streak camera to measure the carrier lifetime via time-resolved photoluminescence. The temporal resolution of the streak camera …

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Characteristics Of Two-Dimensional Triangular And Three-Dimensional Face-Centered-Cubic Photonic Crystals, Jeffery D. Clark Mar 2006

Characteristics Of Two-Dimensional Triangular And Three-Dimensional Face-Centered-Cubic Photonic Crystals, Jeffery D. Clark

Theses and Dissertations

The fabrication of photonic crystals (PhC) with photonic band gaps (PBG) in the visible range is a difficult task due to the small structural feature sizes of the PhC. The particular type of PhC examined is a two-dimensional (2-D) triangular structure with a PBG designed for visible wavelengths with applications in visible integrated photonic systems. This work examines the processes involved and viability of fabricating 2-D triangular PhC's by a variety of techniques: focused ion beam, electron lithography and holographic photo-polymerization/lithography. The design of the PhC was based on a program created to display gap maps for triangular structures. The …

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Multiple Channel Laser Beam Combination And Phasing Using Stimulated Brillouin Scattering In Optical Fibers, Brent W. Grime Dec 2005

Multiple Channel Laser Beam Combination And Phasing Using Stimulated Brillouin Scattering In Optical Fibers, Brent W. Grime

Theses and Dissertations

Brightness scaling lasers using stimulated Brillouin scattering (SBS) in optical fibers is explored. A multiple-channel amplifier approach is used to increase the total power of a laser system while avoiding a significant burden on a single channel. The work explores two approaches utilizing both SBS beam cleanup and SBS piston error conjugation. A unique beam combiner that takes advantage of the SBS beam cleanup properties of a long, gradient-index multimode fiber was designed and tested. The beam combiner was developed to combine multiple-channel laser beams simultaneously with high input and output coupling efficiency. The design for the SBS beam combiner …

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Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli Mar 2005

Detection Of Residual Stress In Sic Mems Using Μ-Raman Spectroscopy, John C. Zingarelli

Theses and Dissertations

Micro-Raman (µ-Raman) spectroscopy is used to measure residual stress in two silicon carbide (SiC) poly-types: single-crystal, hexagonally symmetric 6H-SiC, and polycrystalline, cubic 3C-SiC thin films deposited on Si substrates. Both are used in micro-electrical-mechanical systems (MEMS) devices. By employing an incorporated piezoelectric stage with submicron positioning capabilities along with the Raman spectral acquisition, spatial scans are performed to reveal areas in the 6H-SiC MEMS structures that contain residual stress. Shifts in the transverse optical (TO) Stokes peaks of up to 2 cm-1 are correlated to the material strain induced by the MEMS fabrication process through the development of phonon …

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Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips Mar 2004

Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips

Theses and Dissertations

Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …

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Controlled-Stress Large-Area Pulsed Laser Deposition Of Yttria Stabilized Zirconia, Paul C. Rounsavall Sep 2003

Controlled-Stress Large-Area Pulsed Laser Deposition Of Yttria Stabilized Zirconia, Paul C. Rounsavall

Theses and Dissertations

The US Air Force has need of parabolic-shaped membrane mirrors for surveillance satellites. The current polymer membrane technology has been unable to overcome shape deformation problems caused by intrinsic stresses from the membrane casting and mounting processes. One proposed solution was to coat the membrane mirrors with a stressed coating to compensate for shape deformations. Thus, the research presented in this dissertation produced controlled-stress large-area pulsed laser deposition (PLD) grown thin films on polymer substrates and investigated optical time-of-flight (TOF) sensor systems and Raman spectroscopy for control for the PLD process with respect to thin film stress. Initially, the PLD-grown …

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Electrical Activation Studies Of Silicon Implanted Alx Gal-X N And Coimplanted Gan, Elizabeth A. Chitwood Mar 2003

Electrical Activation Studies Of Silicon Implanted Alx Gal-X N And Coimplanted Gan, Elizabeth A. Chitwood

Theses and Dissertations

A comprehensive study of the electrical activation of silicon implanted AlxGa1-xN was performed as a function ion dose, anneal temperature, and aluminum mole fraction, Also, GaN coimplanted with silicon and nitrogen was investigated. Room temperature Hall effect measurements were used to determine carrier concentration and mobility. All the samples had a 500 Å encapsulant of AlN, and were implanted at room temperature with 200 keV silicon ions at doses ranging from 1x1013 to 1x1015 /sq cm. The GaN was also implanted with nitrogen under the same conditions in doses of 9x1012 to 9x10 …

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Luminescence Studies Of Ion-Implanted Gallium Nitride And Aluminum Gallium Nitride, Erin N. Claunch Mar 2003

Luminescence Studies Of Ion-Implanted Gallium Nitride And Aluminum Gallium Nitride, Erin N. Claunch

Theses and Dissertations

Recently, research on the wide bandgap semiconductors such as GaN and Al(x)Ga(1-x)N became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted AlxGa1-xN, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.

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Measurements Of Neutron Induced Surface And Bulk Defects In 4h Silicon Carbide, Kent T. Jones Mar 2002

Measurements Of Neutron Induced Surface And Bulk Defects In 4h Silicon Carbide, Kent T. Jones

Theses and Dissertations

Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. The optical properties of the material are investigated using temperature-dependant photoluminescence (PL) and the effects of proton irradiation on the electrical properties are evaluated using current-voltage measurements and constant-voltage deep level transient spectroscopy (CV-DLTS). Subsequent high-temperature thermal annealing and recovery of the irradiated material is investigated over the temperature range of 900-1500°C. Proton-induced irradiation damage is apparent in the 4H-SiC material, affecting both the optical and electrical characteristics of the devices. The radiative behavior …

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Smart Structures For Control Of Optical Surfaces, D. Michael Sobers Jr. Mar 2002

Smart Structures For Control Of Optical Surfaces, D. Michael Sobers Jr.

Theses and Dissertations

The development of lightweight, large-aperture optics is of vital importance to the Department of Defense and the US Air Force for advancing remote sensing applications and improving current capabilities. Synthetic polymer optics offer weight and flexibility advantages over current generation glass mirrors, but require active control to maintain tight surface figure tolerances. This research explores the feasibility of using imbedded piezoelectric materials to control optical surfaces. Membrane-based and stiff piezo-controlled mirrors were constructed to develop and validate control techniques. Test results verified that surface control on the order of tens of wavelengths is possible using these systems.

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Characterization Of The Optical And Electrical Properties Of Proton-Irradiated 4h-Silicon Carbide, Heather C. Crockett Mar 2002

Characterization Of The Optical And Electrical Properties Of Proton-Irradiated 4h-Silicon Carbide, Heather C. Crockett

Theses and Dissertations

Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. Semiconductor materials with a high tolerance to radiation fields have applications in several aerospace power and satellite systems. SiC is under investigation due to its potential for such space material applications. The optical properties of the material are investigated using temperature-dependent photoluminescence (PL) and the effects of proton irradiation on the electrical properties are evaluated using current-voltage measurements and constant-voltage deep level transient spectroscopy (CV-DLTS). Subsequent high-temperature thermal annealing and recovery of the irradiated …

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Electrical Activation Studies Of Ion Implanted Gallium Nitride, James A. Fellows Nov 2001

Electrical Activation Studies Of Ion Implanted Gallium Nitride, James A. Fellows

Theses and Dissertations

A comprehensive and systematic electrical activation study of Si-implanted GaN was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, Mg-implanted GaN was also investigated. Temperature-dependent Hall effect measurements and photoluminescence (PL) spectra were used to characterize the samples. GaN wafers capped with AlN were implanted with Si ions at doses ranging from 1x1013 to 5x1015 cm-2 and annealed from 1050 to 1350 °C. The optimum anneal temperature for samples implanted with the higher Si doses is around 1350 °C, exhibiting nearly 100% electrical activation efficiency. Exceptional mobilities and carrier concentrations were …

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Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay Jun 2001

Time-Resolved Photoluminescence Of Inas/Gainsb Quantum Well Lasers, Michael R. Mckay

Theses and Dissertations

In the world of semiconductor photonic device fabrication, one important objective may be to extract as much light as possible from the device. In these devices, photons are created when electrons recombine with holes by transitioning from a high-energy state to a lower one. Unfortunately, electron-hole recombination does not always result in the formation of a photon. There are three basic types of recombination: the first results in the formation of a photon and is called radiative recombination; and the second and third, known as Shockley-Read-Hall and Auger recombination, result in the heating of the device and do not produce …

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Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew Mar 2001

Photoluminescence Of Single Quantum Well Structures In Gallium Arsenide, Christian A. Bartholomew

Theses and Dissertations

The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation …

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