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Articles 121 - 126 of 126
Full-Text Articles in Semiconductor and Optical Materials
A Response Surface Methodology Study Of Ferroelectric Memory Devices, Kevin C. Smith
A Response Surface Methodology Study Of Ferroelectric Memory Devices, Kevin C. Smith
Theses and Dissertations
Fatigue in ferroelectric memory devices was studied. The application of fatigue pulses to a ferroelectric sample was controlled by the RT-66 Ferroelectric Tester, a variation of the Sawyer-Tower circuit. The RT-66 also controlled data collection following the fatiguing process. Seven variables were evaluated for their potential- affect on fatigue. A sequence of fatigue tests, which varied the settings of these variables, was developed using Response Surface Methodology (RSM) experimental designs. Least-squares regression models were developed once a particular RSM set of design experiments was completed. These models were evaluated using RSM tools, and the analysis of these models allowed the …
Characterizing The Sensitivity, Selectivity, And Reversibility Of The Metal-Doped Phthalocyanine Thin-Films Used With The Interdigitated Gate Electrode Field-Effect Transistor (Igefet) To Detect Organophosphorous Compounds And Nitrogen Dioxide, Clayton P. Howe
Theses and Dissertations
This study investigated the sensitivity, reversibility, and selectivity of the thin film coatings used on the interdigitated gate electrode field effect transistor (IGEFET) gas microsensor. These responses were quantified based on the dc resistance changes and frequency domain responses of the microsensor. The thin-film materials included: copper phthalocyanine (CuPc), nickel phthalocyanine (NiPc), and cobalt phthalocyanine (CoPc). The challenge gases included: diisopropyl methylphosphonate (DIMP), dimethyl methylphosphonate (DMMP), nitrogen dioxide, ammonia, and boron trifluoride. Tests of the CuPc thin-films and nitrogen dioxide challenges established the primary set of test parameters expected to maximize the selectivity, sensitivity, and reversibility of the thin-film coatings. …
Low Temperature Photoluminescence Study Of Holmium And Thulium Implanted Into Iii-V Semiconductors And Silicon, Eric Silkowski
Low Temperature Photoluminescence Study Of Holmium And Thulium Implanted Into Iii-V Semiconductors And Silicon, Eric Silkowski
Theses and Dissertations
Low temperature photoluminescence studies were performed on holmium implanted into InP, GaAs, and Si; and thulium implanted into AlGaAs, GaAs, and Si. Samples were annealed by the conventional furnace and rapid thermal techniques. None of the characteristic 4f emissions of holmium were found in the spectral region of .73 to 1.55 eV. AlGaAs:Tm showed strong thulium emissions in the .93 to 1.03 eV region. These emissions were studied and compared to those in GaAs:Tm. Low and high temperature annealed samples showed evidence of trivalent Tm centers. Temperature dependence studies showed that thulium 4f emissions were present above 200 K but …
Angle Of Arrival Detection Through Artificial Neural Network Analysis Of Optical Fiber Intensity Patterns, Scott Thomas
Angle Of Arrival Detection Through Artificial Neural Network Analysis Of Optical Fiber Intensity Patterns, Scott Thomas
Theses and Dissertations
The optical sensors of United States Air Force reconnaissance vehicles, such as satellites, are subject to temporary or permanent blinding from hostile (or threat) laser radiation. By detecting and determining the angle of arrival (AOA) of the hostile radiation, the reconnaissance vehicle may be able to protect its optical sensors by taking evasive maneuvers or by shutting down the optical sensor (such as closing a shutter) until the threat has passed. In addition, the vehicle can relay information to its ground terminal allowing the intelligence community to determine the source of the hostile laser radiation. This thesis demonstrated that an …
Fluorescent Lifetime Measurements Of Rare Earth Elements In Gallium Arsenide, Danny J. Topp
Fluorescent Lifetime Measurements Of Rare Earth Elements In Gallium Arsenide, Danny J. Topp
Theses and Dissertations
Lifetime measurements of the excited states of three GaAs semiconductors doped with the rare earth elements Erbium (ER), Praseodymium (Pr) , and Thulium (Tm) has been studied using a pulsed nitrogen laser and germanium detector. The measurements were made with an experimental set up with a system response time of 0.34 micro seconds. A 330 milliwatt nitrogen laser with a wavelength of 3370 angstrums was used to excite transitions of the rare earth elements.
Characterization Of Barium Titanate As An Optical Amplifier, George A. Vogel
Characterization Of Barium Titanate As An Optical Amplifier, George A. Vogel
Theses and Dissertations
The introduction of two-beam coupling in photorefractive materials has resulted in an extensive amount of research into their use as optical processing/computing elements. This dissertation develops the theoretical equations for two-beam coupling in barium titanate as an optical amplifier. One of the factors which limits the optical gain in photorefractive crystals is the loss of pump beam power to the amplification of parasitic light (beam fanning). This parasitic light is produced by light scattered from the pump beam by imperfections on both the crystal face and within the crystal. Through the analysis of signal and noise amplification as functions of …