Electronic Devices and Semiconductor Manufacturing Commons^™

Nano-Ionic Redox Resistive Ram – Device Performance Enhancement Through Materials Engineering, Characterization And Electrical Testing, Muhammad Rizwan Latif

Boise State University Theses and Dissertations

In recent years, Redox Conductive Bridge Memory (RCBM), which falls in the Resistive Random Access Memory (RRAM) category, has gained considerable attention as one of the promising candidates for future generation non-volatile memory due to its advantages over Flash memory as it offers high density, low operating power, fast read/write operation, and compatibility with conventional CMOS process. Currently research is being conducted to improve the reliability of the RCBM devices, which are comprised of an insulating material, also known as active layer, sandwiched between two metal electrodes. The main working mechanism of these devices is based on the resistance change …

A Reliability Prediction Method For Phase-Change Devices Using Optimized Pulse Conditions, Martin Jared Barclay

Boise State University Theses and Dissertations

Owing to the outstanding device characteristics of Phase-Change Random Access Memory (PCRAM) such as high scalability, high speed, good cycling endurance, and compatibility with conventional complementary metal-oxide-semiconductor (CMOS) processes, PCRAM has reached the point of volume production. However, due to the temperature dependent nature of the phase-change memory device material and the high electrical and thermal stresses applied during the programming operation, the standard methods of high-temperature (Temperature > 125 °C) accelerated retention testing may not be able to accurately predict bit sensing failures or determine slight pulse condition changes needed if the device were to be …

Low Pressure Chemical Vapor Deposition Of Semiconducting Boron Carbide Thin Films On Silicon, Thomas Gregory Wulz

Masters Theses

Boron carbide thin films were grown on the (100) plane of n-type silicon in a low pressure chemical vapor deposition (CVD) system from the thermal decomposition of boron trichloride and methane reactant gases with hydrogen as a carrier gas. Boron trichloride to methane molar ratio was 5, while the boron trichloride to hydrogen molar ratio was 3.5. Thin film deposition was carried out at 900 degrees Celsius at 25 Torr. The thin films were analyzed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Energy Dispersive X-Ray Spectroscopy (EDS), Laser Induced Breakdown Spectroscopy (LIBS), and current-voltage characteristics. The crystallography of …

Synthesis And Characterization Of Nanocrystals And Their Application For Photodetectors, Ahmad Nusir

Graduate Theses and Dissertations

Room temperature operation is considered one of the essential restrictions in the design of electronic devices. Photodetectors are unable to detect light efficiently at room temperature due to high dark currents. Semiconductor nanocrystals possess unique optical and electrical properties which make them ideal for fabricating uncooled photodetectors. In this project, nanocrystals were synthesized and implemented in devices that detect light at room temperature.

Nanocrystalline I-III-VI2 and II-VI semiconductors (CuInS2 and CdSe) were grown by a wet chemical method, and characterized using: optical absorption, photoluminescence, Raman scattering, and x-ray diffraction. The optical absorption and photoluminescence spectra of the nanocrystals were recorded …

High Temperature Ltcc Based Sic Double-Sided Cooling Power Electronic Module, Hao Zhang

Graduate Theses and Dissertations

This objective of this dissertation research is to investigate a module packaging technology for high temperature double-sided cooling power electronic module application. A high-temperature wire-bondless low-temperature co-fired ceramic (LTCC) based double-sided cooling power electronic module was designed, simulated and fabricated. In this module, the conventional copper base plate is removed to reduce the thermal resistance between the device junctions to the heat sink and to improve the reliability of the module by eliminating the large area solder joint between the power substrate and the copper base plate. A low-temperature co-fired ceramic (LTCC) substrate with cavities and vias is used as …

Contact Resistance Evolution And Degradation Of Highly Cycled Micro-Contacts, Christopher L. Stilson

Theses and Dissertations

Reliable microelectromechanical systems (MEMS) switches are critical for developing high performance radio frequency circuits like phase shifters. Engineers have attempted to improve reliability and lifecycle performance using novel contact metals, unique mechanical designs and packaging. Various test fixtures including: MEMS devices, atomic force microscopes (AFM) and nanoindentors have been used to collect resistance and contact force data. AFM and nanoindentor test fixtures allow direct contact force measurements but are severely limited by low resonance sensors, and therefore low data collection rates. This thesis reports the contact resistance evolution results and fabrication of thin film micro-contacts dynamically tested up to 3kHz. …

Investigation Of Degradation Effects Due To Gate Stress In Gan-On-Si High Electron Mobility Transistors Through Analysis Of Low Frequency Noise, Michael Curtis Meyer Masuda

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional semiconductor devices, the GaN HEMT channel region is undoped and relies on the piezoelectric effect created at the GaN and Aluminum Gallium Nitride (AlGaN) heterojunction to create a conduction channel in the form of a quantum well known as the two dimensional electron gas (2DEG). Because the GaN HEMTs are undoped, these devices have higher electron mobility crucial for …

Active Neutral Point Clamped Converter For Equal Loss Distribution, Saad Mekhilef

Prof. Dr. Saad Mekhilef

No abstract provided.

Modified Incremental Conductance Algorithm For Photovoltaic System Under Partial Shading Conditions And Load Variation, Saad Mekhilef

Saad Mekhilef

Under partial shading conditions, multiple peaks are observed in the power–voltage (P–V ) characteristic curve of a photovoltaic (PV) array, and the conventional maximum power point tracking (MPPT) algorithms may fail to track the global maximum power point (GMPP). Therefore, this paper proposes a modified incremental conductance (Inc Cond) algorithm that is able to track the GMPP under partial shading conditions and load variation. A novel algorithm is introduced to modulate the duty cycle of the dc–dc converter in order to ensure fast MPPT process. Simulation and hardware implementation are carried out to evaluate the effectiveness of the proposed algorithm …

Long-Term Wind Speed Forecasting And General Pattern Recognition Using Neural Networks, Saad Mekhilef

Saad Mekhilef

Long-term forecasting of wind speed has become a research hot spot in many different areas such as restructured electricity markets, energy management, and wind farm optimal design. However, wind energy with unstable and intermittent characteristics entails establishing accurate predicted data to avoid inefficient and less reliable results. The proposed study in this paper may provide a solution regarding the long-term wind speed forecast in order to solve the earlier-mentioned problems. For this purpose, two fundamentally different approaches, the statistical and the neural network-based approaches, have been developed to predict hourly wind speed data of the subsequent year. The novelty of …

Spectroscopy Studies Of Straincompensated Mid-Infrared Qcl Active Regions On Misoriented Substrates, Gregory Edward Triplett, Justin Grayer, Charles Meyer, Emily Cheng, Denzil Roberts

Electrical and Computer Engineering Publications

In this work, we perform spectroscopic studies of AlGaAs/InGaAs quantum cascade laser structures that demonstrate frequency mixing using strain-compensated active regions. Using a three-quantum well design based on diagonal transitions, we incorporate strain in the active region using single and double well configurations on various surface planes (100) and (111). We observe the influence of piezoelectric properties in molecular beam epitaxy grown structures, where the addition of indium in the GaAs matrix increases the band bending in between injector regions and demonstrates a strong dependence on process conditions that include sample preparation, deposition rates, mole fraction, and enhanced surface diffusion …

Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng

Electrical and Computer Engineering Publications

In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2 degrees towardssubstrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning electron microscopy, Raman spectroscopy, reflectance spectroscopy, and atomic force microscopy. The procession of InAs deposition throughout a range of deposition conditions results in assorted forms of strain relief revealing that, despite lattice mismatch for InAs on GaAs (approximately 7%), InAs does not necessarily result in typical quantum dot/wire formation on (111) surfaces, but instead proceeds two-dimensionally due primarily to the surface orientation.

Quantum Efficiency Enhancement For Gan Based Light-Emitting Diodes And Vertical Cavity Surface-Emitting Lasers, Fan Zhang

Theses and Dissertations

This thesis explores the improvement of quantum efficiencies for InGaN/GaN heterostructures and their applications in light-emitting diodes (LEDs) and vertical cavity surface-emitting lasers (VCSELs). Different growth approaches and structural designs were investigated to identify and address the major factors limiting the efficiency. (1) Hot electron overflow and asymmetrical electron/hole injection were found to be the dominant reasons for efficiency degradation in nitride LEDs at high injection; (2) delta p-doped InGaN quantum barriers were employed to improve hole concentration inside the active region and therefore improve hole injection without sacrificing the layer quality; (3) InGaN active regions based on InGaN multiple …

Electron – Phonon Interaction In Multiple Channel Gan Based Hfets: Heat Management Optimization, Romualdo A. Ferreyra

Theses and Dissertations

New power applications for managing increasingly higher power levels require that more heat be removed from the power transistor channel. Conventional treatments for heat dissipation do not take into account the conversion of excess electron energy into longitudinal optical (LO) phonons, whose associated heat is stored in the channel unless such LO phonons decay into longitudinal acoustic (LA) phonons via a Ridley path. A two dimensional electron gas (2DEG) density of ~5×10¹²cm^-2 in the channel results in a strong plasmon–LO phonon coupling (resonance) and a minimum LO phonon lifetime is experimentally observed, implying fast heat removal from …

Optical Characterization Of Ingan Heterostructures For Blue Light Emitters And Vertical Cavity Lasers: Efficiency And Recombination Dynamics, Serdal Okur

Theses and Dissertations

OPTICAL CHARACTERIZATION OF INGAN HETEROSTRUCTURES FOR BLUE LIGHT EMITTERS AND VERTICAL CAVITY LASERS: EFFICIENCY AND RECOMBINATION DYNAMICS

By Serdal Okur, Ph.D.

A thesis submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy at Virginia Commonwealth University.

Virginia Commonwealth University, 2014.

Major Director: Ümit Özgür, Associate Professor, Electrical and Computer Engineering

This thesis explores radiative efficiencies and recombination dynamics in InGaN-based heterostructures and their applications as active regions in blue light emitters and particularly vertical cavities. The investigations focus on understanding the mechanism of efficiency loss at high injection as well as developing designs to mitigate …

Measurement And Modeling Of Humidity Sensors, Jingbo Tong

Theses and Dissertations--Electrical and Computer Engineering

Humidity measurement has been increasingly important in many industries and process control applications. This thesis research focus mainly on humidity sensor calibration and characterization. The humidity sensor instrumentation is briefly described. The testing infrastructure was designed for sensor data acquisition, in order to compensate the humidity sensor’s temperature coefficient, temperature chambers using Peltier elements are used to achieve easy-controllable stable temperatures. The sensor characterization falls into a multivariate interpolation problem. Neuron networks is tried for non-linear data fitting, but in the circumstance of limited training data, an innovative algorithm was developed to utilize shape preserving polynomials in multiple planes in …

Switched-Capacitor Voltage Doubler Design Using 0.5 Μm Technology, Hanfeng Wang

Theses

While integrated circuit (IC) power management has been an eternal topic for chip designers, inductor based DC-DC converters have been dominant in the field for years. However, because of the natures of inductors: large electro-magnetic interference, high coupling noise, and difficult silicon fabrication process, they are not favorable to on-chip solutions. Switched-capacitor (SC) DC-DC converters, which adopt capacitors for their energy storage components, have become increasingly popular among both the academia and the industry, because, apparently, they avoid the drawbacks of the inductor counterparts, and can be directly implemented on-chip without additional fabrication process.

In this paper, we will investigate …

A Multi-Physics Computational Approach To Simulating Thz Photoconductive Antennas With Comparison To Measured Data And Fabrication Of Samples, Darren Ray Boyd

Theses and Dissertations--Electrical and Computer Engineering

The frequency demands of radiating systems are moving into the terahertz band with potential applications that include sensing, imaging, and extremely broadband communication. One commonly used method for generating and detecting terahertz waves is to excite a voltage-biased photoconductive antenna with an extremely short laser pulse. The pulsed laser generates charge carriers in a photoconductive substrate which are swept onto the metallic antenna traces to produce an electric current that radiates or detects a terahertz band signal. Therefore, analysis of a photoconductive antenna requires simultaneous solutions of both semiconductor physics equations (including drift-diffusion and continuity relations) and Maxwell’s equations. A …

Enhancing The Insulation Of Wide-Range Spectrum In The Pva/N Thin Film By Doping Zno Nanowires, Yu-Chen Lin, Ching-Hsiang Vhen, Liang-Yih Chen, Shih-Chieh Hsu, Shizhi Qian

Mechanical & Aerospace Engineering Faculty Publications

In this study, polyvinyl alcohol/nitrogen (PVA/N) hybrid thin films doped with sharp-sword ZnO nanowires with insulating effect and wide-range spectrum are demonstrated for the first time. PVA/N doped ZnO nanocomposites were developed by blending PVA and N-doped ZnO nanowires in water at room temperature. Measurements from the field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman, and photoluminescence emission (PL) spectra of the products show that nitrogen is successfully doped into the ZnO wurtzite crystal lattice. In addition, the refractive index of PVA/N doped ZnO hybrid thin films can be controlled by varying the doped ZnO nanowires under different …

Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li

Electrical & Computer Engineering Faculty Publications

Metal-Oxide-Semiconductor (MOS) capacitors with Bi₂Te₃ thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi₂Te₃ thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi₂Te₃, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …

Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm ². Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic …