Electronic Devices and Semiconductor Manufacturing Commons^™

Development Of Micro-Hall Devices For Current Sensing, Thomas White

Graduate Theses and Dissertations

In this work, micro-Hall devices were developed for the purpose of sensing current within a high temperature and high power environment. GaAs HEMT, InGaAs pHEMT, and GaN HEMT structures were studied. These structures were grown by molecular beam epitaxy. Processing techniques including photolithography, metallization, Si deposition, wet etching, and dry etching were studied. Electrical characterization measurements including low frequency noise, Hall effect, sensitivity, capacitance-voltage, and current-voltage were performed.

Electron mobility and sheet carrier density studies were performed for both the InGaAs pHEMT and GaAs HEMT structures. Results indicated the InGaAs pHEMT was superior and thus fabricated as the micro-Hall device. …

Investigation Of Degradation Effects Due To Gate Stress In Gan-On-Si High Electron Mobility Transistors Through Analysis Of Low Frequency Noise, Michael Curtis Meyer Masuda

Master's Theses

Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional semiconductor devices, the GaN HEMT channel region is undoped and relies on the piezoelectric effect created at the GaN and Aluminum Gallium Nitride (AlGaN) heterojunction to create a conduction channel in the form of a quantum well known as the two dimensional electron gas (2DEG). Because the GaN HEMTs are undoped, these devices have higher electron mobility crucial for …