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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Engineering Plasmonic Nanostructures For Light Management And Sensing, Sujan Phani Kumar Kasani Jan 2019

Engineering Plasmonic Nanostructures For Light Management And Sensing, Sujan Phani Kumar Kasani

Graduate Theses, Dissertations, and Problem Reports (ETD)

The two major global problems are to provide health safety and to meet energy demands for ever growing population on a large scale. The study of light interaction with nanostructures has shown a promising solution in improving the fields of bio-sensor and solar energy devices which addresses above mentioned two major global problems. Nanostructures have tunable physicochemical properties such as light absorption, electrical and thermal properties unlike bulk materials, which gives an advantage in applications like bio-sensing and energy harvesting devices. The development of nanofabrication techniques along with the discovery of Surface Enhanced Raman Scattering (SERS) and Plasmon Enhanced Fluorescence …


Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li Dec 2018

Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li

Graduate Theses and Dissertations

Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and super lattices (SLs) are expected to be promising alternatives to random InGaN alloys since in principle they can achieve the equivalent band gap of InGaN random alloys with arbitrarily high In-content and at the same time bypass many growth difficulties.

This dissertation focuses on studying the growth mechanisms, structural properties and energy structures of InN/GaN …


Genetic Algorithm Design Of Photonic Crystals For Energy-Efficient Ultrafast Laser Transmitters, Troy A. Hutchins-Delgado Nov 2018

Genetic Algorithm Design Of Photonic Crystals For Energy-Efficient Ultrafast Laser Transmitters, Troy A. Hutchins-Delgado

Shared Knowledge Conference

Photonic crystals allow light to be controlled and manipulated such that novel photonic devices can be created. We are interested in using photonic crystals to increase the energy efficiency of our semiconductor whistle-geometry ring lasers. A photonic crystal will enable us to reduce the ring size, while maintaining confinement, thereby reducing its operating power. Photonic crystals can also exhibit slow light that will increase the interaction with the material. This will increase the gain, and therefore, lower the threshold for lasing to occur. Designing a photonic crystal for a particular application can be a challenge due to its number of …


Thermal And Mechanical Energy Harvesting Using Lead Sulfide Colloidal Quantum Dots, Taher Ghomian Oct 2018

Thermal And Mechanical Energy Harvesting Using Lead Sulfide Colloidal Quantum Dots, Taher Ghomian

LSU Doctoral Dissertations

The human body is an abundant source of energy in the form of heat and mechanical movement. The ability to harvest this energy can be useful for supplying low-consumption wearable and implantable devices. Thermoelectric materials are usually used to harvest human body heat for wearable devices; however, thermoelectric generators require temperature gradient across the device to perform appropriately. Since they need to attach to the heat source to absorb the heat, temperature equalization decreases their efficiencies. Moreover, the electrostatic energy harvester, working based on the variable capacitor structure, is the most compatible candidate for harvesting low-frequency-movement of the human body. …


Spice Based Compact Model For Electrical Switching Of Antiferromagnet, Xe Jin Chan, Jan Kaiser, Pramey Upadhyaya Aug 2018

Spice Based Compact Model For Electrical Switching Of Antiferromagnet, Xe Jin Chan, Jan Kaiser, Pramey Upadhyaya

The Summer Undergraduate Research Fellowship (SURF) Symposium

A simulation framework that can model the behavior of antiferromagnets (AFMs) is essential to building novel high-speed devices. The electrical switching of AFMs allows for high performance memory applications. With new phenomena in spintronics being discovered, there is a need for flexible and expandable models. With that in mind, we developed a model for AFMs which can be used to simulate AFM switching behavior in SPICE. This approach can be modified for adding modules, keeping pace with new developments. The proposed AFM switching model is based on the Landau-Lifshitz-Gilbert equation (LLG). LLG along with an exchange coupling module is implemented …


Hybrid Perovskite Characterization And Device Applications., Kasun Fernando Aug 2018

Hybrid Perovskite Characterization And Device Applications., Kasun Fernando

Electronic Theses and Dissertations

Hybrid perovskites are a group of materials that has shown a great impact in the field of scientific research in the past decade due to the efficiency gain within a short period of time. Hot casting is one technique that has been producing high efficient and stable solar cells. Electrical transportation of lateral device structure by such film is explored to understand basic properties and predict possible device applications using it. Under dark, memristive ability of the film was explored using various experiments. Unique uni-polar memristor ability was observed. Using the experimental results, a model is hypothesized using the concepts …


High-Sn-Content Gesn Alloy Towards Room-Temperature Mid Infrared Laser, Wei Dou Aug 2018

High-Sn-Content Gesn Alloy Towards Room-Temperature Mid Infrared Laser, Wei Dou

Graduate Theses and Dissertations

Si photonics is a rapidly expanding technology that integrates photonic circuits onto a Si substrate. The integration of Si electronics and photonics has been a successful technology for a wide range of applications. Group-IV alloy GeSn has drawn great attentions as a complementary metal–oxide–semiconductor compatible optoelectronic material for Si photonics. The devices based on GeSn alloy could be monolithically integrated into well-established and high-yield Si integrated circuits, which is favorable for chip-scale Si photonics featuring smaller size, lower cost, and higher reliability.

The relaxed GeSn with high material quality and high Sn composition is highly desirable to cover mid-infrared wavelength. …


Adaptation Of Vt-Dbr Lasers For Lidar, Luke Horowitz Jun 2018

Adaptation Of Vt-Dbr Lasers For Lidar, Luke Horowitz

Master's Theses

Vernier Tuned Distributed Bragg Reflector (VT-DBR) lasers have had great success in the field of Swept-Source Optical Coherence Tomography (SS-OCT) due to their continuous and nearly 40 nm wavelength tuning range in a single longitudinal mode. Fast sweeps allow for real time imaging with micrometer resolution at a distance of a few centimeters. While this laser has proven quite useful as a medical imaging tool via OCT, it has yet to similarly prove itself for general light detection and ranging (LIDAR) applications due to range limitations that arise from a finite laser coherence length. The goal of this thesis is …


A Comparative Analysis Of Integrated Optical Waveguide Isolators With Magneto-Optic Layers, Reyhane Oztekin May 2018

A Comparative Analysis Of Integrated Optical Waveguide Isolators With Magneto-Optic Layers, Reyhane Oztekin

Electrical Engineering Theses and Dissertations

The objective of this study is to theoretically devise an on-chip optical isolator which is monolithically integrated with a semiconductor waveguide layer yielding low loss. The optical properties of iron are modeled for the use of optical waveguide isolators by improving the Brendel-Bormann model. Our model for iron shows excellent fit with the optical data up to 30 electronvolts (eV). The semiconductor optical waveguide isolator with magneto-optic layers based on non-reciprocal loss shift is developed in this study. Fe, Co, and Ni metals as well as cerium-substituted yttrium iron garnet (Ce:YIG) have been used as magneto-optic layers. We have shown …


Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi Aug 2017

Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi

Graduate Theses and Dissertations

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. …


Laser-Assisted Metal Organic Chemical Vapor Deposition Of Gallium Nitride, Hossein Rabiee Golgir Jul 2017

Laser-Assisted Metal Organic Chemical Vapor Deposition Of Gallium Nitride, Hossein Rabiee Golgir

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Due to its unique properties, gallium nitride is of great interest in industry applications including optoelectronics (LEDs, diode laser, detector), high power electronics, and RF and wirelss communication devices. The inherent shortcomings of current conventional deposition methods and the ever-increasing demand for gallium nitride urge extended efforts for further enhancement of gallium nitride deposition. The processes of conventional methods for gallium nitride deposition, which rely on thermal heating, are inefficient energy coupling routes to drive gas reactions. A high deposition temperature (1000-1100 °C) is generally required to overcome the energy barriers to precursor adsorption and surface adatom migration. However, there …


Development Of Intermediate Band Solar Cell Through Ingan Quantum Well Structures, Kelly Mckenzie May 2017

Development Of Intermediate Band Solar Cell Through Ingan Quantum Well Structures, Kelly Mckenzie

Electrical Engineering Undergraduate Honors Theses

In the search for high-efficiency solar cells, InxGa1-xN has come under scrutiny as a unique material with high potential. This is due to characteristics including an easily tunable bandgap, large range of potential bandgap values, and high heat resistance. However, one factor limiting its adaptation is the high density of crystal defects. In this thesis, the qualities of InGaN are discussed and the intermediate band solar cell structure is introduced. Additionally, the growth and characterization of two sets of InGaN-based solar cell devices are reported and evaluated.


Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara Jan 2017

Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara

Theses and Dissertations

Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge1-xSnx alloy quantum-dots (QDs) are explored for potential visible to …


Investigation Of The Optical Properties Of Pbse/Pbx Nanocrystals For Photodetector Applications, Haley Ann Morris Dec 2016

Investigation Of The Optical Properties Of Pbse/Pbx Nanocrystals For Photodetector Applications, Haley Ann Morris

Graduate Theses and Dissertations

Lead selenide and lead selenide/lead sulfide core/shell nanocrystals were investigated for use in near infrared photodetectors. A colloidal synthesis method was used for both the core and core/shell configurations. The lead sulfide shell was examined in order to mitigate oxidation of the nanoparticle surface. Absorbance and photoluminescence spectra were measured at room temperature and 77 K, respectively. Transmission electron microscopy images were also obtained to confirm crystallography and size. Bulk lead selenide was simulated in WIEN2k utilizing the linear-augmented plane wave method of solving density functional theory to better understand the electronic structure of PbSe. The crystal structure, electron density, …


Design, Fabrication And Measurement Of A Plasmonic Enhanced Terahertz Photoconductive Antenna, Nathan Matthias Burford Dec 2016

Design, Fabrication And Measurement Of A Plasmonic Enhanced Terahertz Photoconductive Antenna, Nathan Matthias Burford

Graduate Theses and Dissertations

Generation of broadband terahertz (THz) pulses from ultrafast photoconductive antennas (PCAs) is an attractive method for THz spectroscopy and imaging. This provides a wide frequency bandwidth (0.1-4 THz) as well as the straightforward recovery of both the magnitude and phase of the transmitted and/or reflected signals. The achieved output THz power is low, approximately a few microwatts. This is due to the poor conversion of the femtosecond laser used as the optical pump to useable current inside the antenna semiconducting material. The majority of THz power comes from the photocarriers generated within ~ 100 nm distance from the antenna electrodes. …


Pattern Reconfigurable Back-To-Back Microstrip Patch Antenna, Kansheng Yang, Xiulong Bao, Patrick Mcevoy, Max Ammann Oct 2016

Pattern Reconfigurable Back-To-Back Microstrip Patch Antenna, Kansheng Yang, Xiulong Bao, Patrick Mcevoy, Max Ammann

Articles

A back-to- back microstrip patch antenna with a switchable pattern is proposed for WLAN applications. The patch elements, printed on FR-4 substrates with a common ground plane, are switched with a single-pole double-throw PIN diode circuit. Switching the feed selects either of two identical radiation patterns in the opposing hemispheres for spatial diversity that would benefit a distributed network.


Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks Aug 2016

Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks

Graduate Theses and Dissertations

The first-ever 1.7kV 8A SiC physics-based compact SPICE model is developed for behavior prediction, modeling and simulation of the GeneSiC “Super” Junction Transistor. The model implements Gummel-Poon based equations and adds a quasi-saturation collector series resistance representation from a 1.2 kV, 6 A SiC bipolar junction transistor model developed in Hangzhou, China. The model has been validated with the GA08JT17-247 device data representing both static and dynamic characteristics from GeneSiC. Parameter extraction was performed in IC-CAP and results include plots showing output characteristics, capacitance versus voltage (C-V), and switching characteristics for 25 °C, 125 °C, and 175 °C temperatures.


Amorphous Silicon Solar Vivaldi Antenna, Oisin O'Conchubhair, Kansheng Yang, Patrick Mcevoy, Max Ammann Mar 2016

Amorphous Silicon Solar Vivaldi Antenna, Oisin O'Conchubhair, Kansheng Yang, Patrick Mcevoy, Max Ammann

Articles

An ultra-wideband solar Vivaldi antenna is proposed. Cut from amorphous silicon cells, it maintains a peak power at 4.25 V which overcomes a need for lossy power management components. The wireless communications device can yield solar energy or function as a rectenna for dual-source energy harvesting. The solar Vivaldi performs with 0.5 - 2.8 dBi gain from 0.95 - 2.45 GHz and in rectenna mode, it covers three bands for wireless energy scavenging.


Ultra–Low Power Straintronic Nanomagnetic Computing With Saw Waves: An Experimental Study Of Saw Induced Magnetization Switching And Properties Of Magnetic Nanostructures, Vimal G. Sampath Jan 2016

Ultra–Low Power Straintronic Nanomagnetic Computing With Saw Waves: An Experimental Study Of Saw Induced Magnetization Switching And Properties Of Magnetic Nanostructures, Vimal G. Sampath

Theses and Dissertations

A recent International Technology Roadmap for Semiconductors (ITRS) report (2.0, 2015 edition) has shown that Moore’s law is unlikely to hold beyond 2028. There is a need for alternate devices to replace CMOS based devices, if further miniaturization and high energy efficiency is desired. The goal of this dissertation is to experimentally demonstrate the feasibility of nanomagnetic memory and logic devices that can be clocked with acoustic waves in an extremely energy efficient manner. While clocking nanomagnetic logic by stressing the magnetostrictive layer of a multiferroic logic element with with an electric field applied across the piezoelectric layer is known …


Nanosphere Lithography And Its Application In Rapid And Economic Fabrication Of Plasmonic Hydrogenated Amorphous Silicon Photovoltaic Devices, Chenlong Zhang Jan 2016

Nanosphere Lithography And Its Application In Rapid And Economic Fabrication Of Plasmonic Hydrogenated Amorphous Silicon Photovoltaic Devices, Chenlong Zhang

Dissertations, Master's Theses and Master's Reports

Solar photovoltaic (PV) devices harvest energy from solar radiation and convert it to electricity. PV technologies, as an alternative to traditional fossil fuels, use clean and renewable energy while minimizing pollution. For decades researchers have been developing thin film solar cells as an important alternatives to the relatively expensive bulk crystal solar cell technology. Among those, hydrogenated amorphous silicon (a-Si:H) solar cells prevails for good efficiency, non-toxic and materially abundant nature. However, a-Si:H thickness must be minimized to prevent light induced degradation, so optical enhancement is necessary. Light manipulation has to be applied and carefully engineered to trap light within …


Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian Jan 2016

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …


Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz Jan 2016

Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz

Theses and Dissertations

InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge1−xSnx alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving …


Skin Effect Suppression In Infrared-Laser Irradiated Planar Multi-Walled Carbon Nanotube/Cu Conductors, Kamran Keramatnejad, Yang Gao, Yunshen Zhou, Hossein Rabiee Glogir, Mengmeng Wang, Yongfeng Lu Oct 2015

Skin Effect Suppression In Infrared-Laser Irradiated Planar Multi-Walled Carbon Nanotube/Cu Conductors, Kamran Keramatnejad, Yang Gao, Yunshen Zhou, Hossein Rabiee Glogir, Mengmeng Wang, Yongfeng Lu

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Skin effect suppression in planar multi-walled carbon nanotube (MWCNT)/Copper (Cu) conductors was realized at the 0-10 MHz frequency range through infrared laser irradiation of MWCNTs, which were coated on the surface of the Cu substrate via the electrophoretic deposition (EPD) method. The effect of laser irradiation and its power density on electrical and structural properties of the MWCNT/Cu conductors was investigated using a wavelength-tunable CO2 laser and then comparing the performance of the samples prepared at different conditions with that of pristine Cu. The irradiation at λ=9.219 μm proved to be effective in selective delivery of energy towards depths close …


Characterization Of Two Vernier-Tuned Distributed Bragg Reflector (Vt-Dbr) Lasers Used In Swept Source Optical Coherence Tomography (Ss-Oct), Greg M. Bergdoll Jun 2015

Characterization Of Two Vernier-Tuned Distributed Bragg Reflector (Vt-Dbr) Lasers Used In Swept Source Optical Coherence Tomography (Ss-Oct), Greg M. Bergdoll

Master's Theses

Insight Photonic Solutions Inc. has continued to develop their patented VT-DBR laser design; these wavelength tunable lasers promise marked image-quality and acquisition time improvements in SS-OCT applications.

To be well suited for SS-OCT, tunable lasers must be capable of producing a highly linear wavelength sweep across a tuning range well-matched to the medium being imaged; many different tunable lasers used in SS-OCT are compared to identify the optimal solution.

This work electrically and spectrally characterizes two completely new all-semiconductor VT-DBR designs to compare, as well. The Neptune VT-DBR, an O-band laser, operates around the 1310 nm range and is a …


Characterization Of Silicon Phosphorus Alloy For Device Applications, Larry C. Cousar May 2015

Characterization Of Silicon Phosphorus Alloy For Device Applications, Larry C. Cousar

Graduate Theses and Dissertations

A new material of highly-phosphorus doped silicon for device applications was characterized and analyzed for new material properties. Devices such as NMOS transistors and other CMOS compatible devices may benefit from new materials that reduce external resistances and increase drive currents.

Material characterization requires numerous techniques and technologies to determine electrical, optical, and physical characteristics. For this work, Hall measurement, X-ray Diffraction, Raman Spectroscopy, Photoluminescence Characterization, and Spectroscopic Ellipsometry were used to better understand this new material. The results may lead to new models for silicon phosphorus alloys.


Single-Walled Carbon Nanotube Arrays For High Frequency Applications, Asmaa Elkadi May 2015

Single-Walled Carbon Nanotube Arrays For High Frequency Applications, Asmaa Elkadi

Graduate Theses and Dissertations

This dissertation presents a thorough analysis of semiconducting Single-Walled Carbon Nanotube-based devices, followed by a test structure fabrication and measurements.

The analysis starts by developing an individual nanotube model, which is then generalized for many nanotubes and adding the parasitic elements. The parasitic elements appear when forming the device electrodes degrade the overall performance.

The continuum model of an individual nanotube is developed. A unique potential function is presented to effectively describe the electron distribution in the carbon nanotube subsequently facilitating solving Schrödinger's equation to obtain the energy levels, and to generalize the model for many nanotubes.

It is shown …


Low Clutter Method For Bistatic Rcs Measurements, Peter J. Collins Feb 2015

Low Clutter Method For Bistatic Rcs Measurements, Peter J. Collins

AFIT Patents

A bistatic radar measurement system is provided having a radar source configured to produce a radio frequency signal. A transmitting antenna is configured to transmit the radio frequency signal toward a target. A receiving antenna is configured to receive a reflected radio frequency signal from the target. A support system is configured to support the receiving antenna. The support system includes a plurality of low scattering dielectric strings configured to orient the receiving antenna.


Hybrid Silicon Mode-Locked Laser With Improved Rf Power By Impedance Matching, Bassem M. Tossoun Sep 2014

Hybrid Silicon Mode-Locked Laser With Improved Rf Power By Impedance Matching, Bassem M. Tossoun

Master's Theses

The mode-locked laser diode (MLLD) finds a lot of use in applications such as ultra high-speed data processing and sampling, large-capacity optical fiber communications based on optical time-division multiplexing (OTDM) systems. Integrating mode-locked lasers on silicon makes way for highly integrated silicon based photonic communication devices. The mode-locked laser being used in this thesis was built with Hybrid Silicon technology. This technology, developed by UC Santa Barbara in 2006, introduced the idea of wafer bonding a crystalline III- V layer to a Silicon-on-insulator (SOI) substrate, making integrated lasers in silicon chips possible.

Furthermore, all mode-locked lasers produce phase noise, which …


Health Risks Caused By Wireless Technologies, Durreeshahwar Zafarahmed, Qurrat-Ul-Ain Zafarahmed Aug 2014

Health Risks Caused By Wireless Technologies, Durreeshahwar Zafarahmed, Qurrat-Ul-Ain Zafarahmed

Journal of Undergraduate Research at Minnesota State University, Mankato

There are many health issues related to the use of cellular phones, wireless local area networks, and other devices that emit electromagnetic radiation (EMR). Some of these systems have become a part of our daily lives and many of us are in direct or indirect contact for extended period of times with these devices. However, the general public is unaware of the health risks associated with the use of these devices. Our research covers studies done by individuals as well as organizations on the harmful effects on the health of people from these devices and their claims. We also present …


A Multi-Physics Computational Approach To Simulating Thz Photoconductive Antennas With Comparison To Measured Data And Fabrication Of Samples, Darren Ray Boyd Jan 2014

A Multi-Physics Computational Approach To Simulating Thz Photoconductive Antennas With Comparison To Measured Data And Fabrication Of Samples, Darren Ray Boyd

Theses and Dissertations--Electrical and Computer Engineering

The frequency demands of radiating systems are moving into the terahertz band with potential applications that include sensing, imaging, and extremely broadband communication. One commonly used method for generating and detecting terahertz waves is to excite a voltage-biased photoconductive antenna with an extremely short laser pulse. The pulsed laser generates charge carriers in a photoconductive substrate which are swept onto the metallic antenna traces to produce an electric current that radiates or detects a terahertz band signal. Therefore, analysis of a photoconductive antenna requires simultaneous solutions of both semiconductor physics equations (including drift-diffusion and continuity relations) and Maxwell’s equations. A …