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Articles 1 - 6 of 6
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Analyses Of Densely Crosslinked Phenolic Systems Using Low Field Nmr, Jigneshkumar Patel
Analyses Of Densely Crosslinked Phenolic Systems Using Low Field Nmr, Jigneshkumar Patel
Doctoral Dissertations
A uniform dispersion of reactants is necessary to achieve a complete reaction involving multi-components, especially for the crosslinking of rigid high-performance materials. In these reactions, miscibility is crucial for curing efficiency. This miscibility is typically enhanced by adding a third component, a plasticizer. For the reaction of the highly crystalline crosslinking agent hexamethylenetetramine (HMTA) with a strongly hydrogen-bonded phenol formaldehyde resin, furfural has been traditionally used as the plasticizer. However, the reason for its effectiveness is not clear. In this doctoral thesis work, miscibility and crosslinking efficiency of plasticizers in phenolic curing reactions are studied by thermal analysis and spectroscopic …
Resilient And Real-Time Control For The Optimum Management Of Hybrid Energy Storage Systems With Distributed Dynamic Demands, Christopher R. Lashway
Resilient And Real-Time Control For The Optimum Management Of Hybrid Energy Storage Systems With Distributed Dynamic Demands, Christopher R. Lashway
FIU Electronic Theses and Dissertations
A continuous increase in demands from the utility grid and traction applications have steered public attention toward the integration of energy storage (ES) and hybrid ES (HESS) solutions. Modern technologies are no longer limited to batteries, but can include supercapacitors (SC) and flywheel electromechanical ES well. However, insufficient control and algorithms to monitor these devices can result in a wide range of operational issues. A modern day control platform must have a deep understanding of the source. In this dissertation, specialized modular Energy Storage Management Controllers (ESMC) were developed to interface with a variety of ES devices. The EMSC provides …
Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi
Si-Based Germanium Tin Semiconductor Lasers For Optoelectronic Applications, Sattar H. Sweilim Al-Kabi
Graduate Theses and Dissertations
Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. …
Laser-Assisted Metal Organic Chemical Vapor Deposition Of Gallium Nitride, Hossein Rabiee Golgir
Laser-Assisted Metal Organic Chemical Vapor Deposition Of Gallium Nitride, Hossein Rabiee Golgir
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
Due to its unique properties, gallium nitride is of great interest in industry applications including optoelectronics (LEDs, diode laser, detector), high power electronics, and RF and wirelss communication devices. The inherent shortcomings of current conventional deposition methods and the ever-increasing demand for gallium nitride urge extended efforts for further enhancement of gallium nitride deposition. The processes of conventional methods for gallium nitride deposition, which rely on thermal heating, are inefficient energy coupling routes to drive gas reactions. A high deposition temperature (1000-1100 °C) is generally required to overcome the energy barriers to precursor adsorption and surface adatom migration. However, there …
Development Of Intermediate Band Solar Cell Through Ingan Quantum Well Structures, Kelly Mckenzie
Development Of Intermediate Band Solar Cell Through Ingan Quantum Well Structures, Kelly Mckenzie
Electrical Engineering Undergraduate Honors Theses
In the search for high-efficiency solar cells, InxGa1-xN has come under scrutiny as a unique material with high potential. This is due to characteristics including an easily tunable bandgap, large range of potential bandgap values, and high heat resistance. However, one factor limiting its adaptation is the high density of crystal defects. In this thesis, the qualities of InGaN are discussed and the intermediate band solar cell structure is introduced. Additionally, the growth and characterization of two sets of InGaN-based solar cell devices are reported and evaluated.
Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara
Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara
Theses and Dissertations
Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge1-xSnx alloy quantum-dots (QDs) are explored for potential visible to …