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Articles 1 - 9 of 9
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Nano-Patterned Si Structures For Optical Filters And Electro-Mechanical Relays: Fabrication, Characterization, Prospects, And Limitations, Md Ataul Mamun
Nano-Patterned Si Structures For Optical Filters And Electro-Mechanical Relays: Fabrication, Characterization, Prospects, And Limitations, Md Ataul Mamun
Theses and Dissertations
Nanofabrication technology, especially nanopatterning, is a rapidly advancing field that has already resulted in creating novel devices and holds promise for producing even more with unmatched performance. These techniques also allow us to gain insight into physical phenomena at the micro- and nanoscale. The ultimate performance of nanofabricated devices and their compatibility with existing Si-based CMOS technology hinge upon the careful selection of materials and precise design, coordinated with meticulous pattern transfer. In this work, we applied nanopatterning techniques on silicon to create optical filters for the shortwave infrared (SWIR) region and nanoelectromechanical system (NEMS) relay-based logic gates. Additionally, these …
Low Insertion-Loss Nanophotonic Modulators Through Epsilon-Near-Zero Material-Based Plasmon-Assisted Approach For Integrated Photonics, Mohammad Ariful Hoque Sojib
Low Insertion-Loss Nanophotonic Modulators Through Epsilon-Near-Zero Material-Based Plasmon-Assisted Approach For Integrated Photonics, Mohammad Ariful Hoque Sojib
Theses and Dissertations
Electro-optic/absorption Modulators (EOM/EAMs) encode high-frequency electrical signals into optical signals. With the requirement of large packing density, device miniaturization is possible by confining light in a sub-wavelength dimension by utilizing the plasmonic phenomenon. In plasmon, energy gets transferred from light to the form of oscillation of free electrons on a surface of a metal at an interface between the metal and a dielectric. Plasmonic provides increased light-matter interaction (LMI) and thus making the light more sensitive to local refractive index change. Plasmonic-based integrated nanophotonic modulators, despite their promising features, have one key limiting factor of large Insertion Loss (IL) which …
On-Chip Nanoscale Plasmonic Optical Modulators, Abdalrahman Mohamed Nader Abdelhamid
On-Chip Nanoscale Plasmonic Optical Modulators, Abdalrahman Mohamed Nader Abdelhamid
Theses and Dissertations
In this thesis work, techniques for downsizing Optical modulators to nanoscale for the purpose of utilization in on chip communication and sensing applications are explored. Nanoscale optical interconnects can solve the electronics speed limiting transmission lines, in addition to decrease the electronic chips heat dissipation. A major obstacle in the path of achieving this goal is to build optical modulators, which transforms data from the electrical form to the optical form, in a size comparable to the size of the electronics components, while also having low insertion loss, high extinction ratio and bandwidth. Also, lap-on-chip applications used for fast diagnostics, …
Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara
Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara
Theses and Dissertations
Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge1-xSnx alloy quantum-dots (QDs) are explored for potential visible to …
Ultra–Low Power Straintronic Nanomagnetic Computing With Saw Waves: An Experimental Study Of Saw Induced Magnetization Switching And Properties Of Magnetic Nanostructures, Vimal G. Sampath
Theses and Dissertations
A recent International Technology Roadmap for Semiconductors (ITRS) report (2.0, 2015 edition) has shown that Moore’s law is unlikely to hold beyond 2028. There is a need for alternate devices to replace CMOS based devices, if further miniaturization and high energy efficiency is desired. The goal of this dissertation is to experimentally demonstrate the feasibility of nanomagnetic memory and logic devices that can be clocked with acoustic waves in an extremely energy efficient manner. While clocking nanomagnetic logic by stressing the magnetostrictive layer of a multiferroic logic element with with an electric field applied across the piezoelectric layer is known …
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian
Theses and Dissertations
Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …
Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz
Optical Investigations Of Ingan Heterostructures And Gesn Nanocrystals For Photonic And Phononic Applications: Light Emitting Diodes And Phonon Cavities, Shopan D. Hafiz
Theses and Dissertations
InGaN heterostructures are at the core of blue light emitting diodes (LEDs) which are the basic building blocks for energy efficient and environment friendly modern white light generating sources. Through quantum confinement and electronic band structure tuning on the opposite end of the spectrum, Ge1−xSnx alloys have recently attracted significant interest due to its potential role as a silicon compatible infra-red (IR) optical material for photodetectors and LEDs owing to transition to direct bandgap with increasing Sn. This thesis is dedicated to establishing an understanding of the optical processes and carrier dynamics in InGaN heterostructures for achieving …
Electromagnetic Modeling And Measurement Of Adaptive Metamaterial Structural Elements, Matthew E. Jussaume
Electromagnetic Modeling And Measurement Of Adaptive Metamaterial Structural Elements, Matthew E. Jussaume
Theses and Dissertations
This document addresses two major obstacles facing metamaterial development: uncertainty in the characterization of electromagnetic field behavior in metamaterial structures and the relatively small operational bandwidth of metamaterial structures. To address the first obstacle, a method of prediction aided measurement is developed and exploited to examine the field interactions within metamaterial devices. The fusion of simulation and measurement techniques enhances the understanding of the physical interactions of fields in the presence of metamaterials. To address the second obstacle, this document characterizes the effectiveness of an adaptive metamaterial design that incorporates a microelectromechanical systems (MEMS) variable capacitor. Applying voltages to the …
Air Gap Error Compensation For Coaxial Transmission Line Method Of Electromagnetic Material Characterization, Ronald G. Fehlen
Air Gap Error Compensation For Coaxial Transmission Line Method Of Electromagnetic Material Characterization, Ronald G. Fehlen
Theses and Dissertations
This research analyzes material characterization measurements from 50 Mhz to 3.05 GHz where an axially symmetric air gap exists between the sample material and the inner or outer conductor. Higher order fields are excited by the air gap and are accounted for through modal analysis methods. A root search minimizes the difference between the calculated scattering parameters from the modal method and the experimentally measured scattering parameters. The root is the permittivity and permeability of the material. This method is tested with a non-magnetic material and a heavily loaded magnetic material. An error analysis based on dimension measurement uncertainty is …